MOS CASCODE Search Results

P-Channel IGBT

Contextual Info: Novel SiC MOS-Bipolar Switches for >10 kV Applications Ranbir Singh GeneSiC Semiconductor Inc. 25050 Riding Plaza, Suite 130-801, South Riding, VA 20152 571-265-7535 ph , 703-373-6918 (fax), ranbir@ieee.org (email). MOS-based gate control is considered a necessity for the applicability of a switch to

MRF9742

Abstract: MOTOROLA MASTER SELECTION GUIDE RF MHW591 MHW704 mhw593 MHW707-2 MHW592 MRF947T1 equivalent MHW707-1 MRF9282T1
Contextual Info: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar

J FET RF Cascode Input

Abstract: sd2200 SD2200 SEMICONDUCTOR SD2200DE topaz
Contextual Info: TOPAZ SEMICONDUCTOR DSE D g ^0fl522b □ □□1,050 1 | ' T - yi-zf SD22ÛQ SEMICONDUCTOR_ N-CHANNEL DEPLETION-MODE D-MOS FET ORDERING INFORMATION TO-206AF TO-72 Hermetic Package SD2200DE SD2200DE/R with Shorting Ring on leads 20Vt 750

MHW707-2

Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
Contextual Info: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar

Contextual Info: ff - fo - ^ TMF120, TMF122, Universal Semiconductor TMF121 TMF123 M onolithic D ual N -C hannel Enhancem ent-M ode L ateral D-MOS FETs Ordering Inform ation Differential Gate-Source Voltage Differential Drift TO-99 Hermetic Package TO-99 Package with Shorting Ring

LM714

Abstract: LM714 dual package CA3193AE ic 741 operational amplifier subtracter CA3193 3193A differential pair cascode darlington CA3193 CA3193A CA3193E
Contextual Info: tle 3193, 3193A bject MHz, MOS cision rational plifiers) thor ) ywords rris miconor, sin- rational lifier, cost op , low ut bias ent, preon, ustrial mercial pera, unity stable, age back Semiconductor January 1998 Features CA3193, CA3193A CT UCT ODU E PROD 7

TRIAC RCA ca3058

Abstract: rca ca3240E CA311G CA101AT CA124G sn76013 CA1310 CA555CG Fuji Electric tv schematic diagram 40468A
Contextual Info: RCA Linear Integrated Circuits This DATABOOK contains complete technical information on the full line of RCA standard commercial linear in­ tegrated circuits and MOS field-effect transistors for both industrial and con­ sumer applications. An Index to Devices provides a complete listing of

PA119CE

Contextual Info: PA119CE • PA119CEA PA119CE • PA119CEA PA119CE, PA119CEA Video Power Operational Amplifier FEATURES • VERY FAST SLEW RATE — 900 V/µs • POWER MOS TECHNOLOGY — 4A peak rating • LOW INTERNAL LOSSES — 0.75V at 2A • PROTECTED OUTPUT STAGE — Thermal Shutoff

CMOS differential amplifier cascode

Abstract: folded cascode op amp open loop gain high end amplifier schematics folded cascode second stage folded cascode current mirror op amp folded cascode rail to rail op amp AN13310 class A push pull power amplifier EL5157 Q7-Q10
Contextual Info: Avoiding Instability in Rail-to-Rail CMOS Amplifiers Application Note January 2, 2008 AN1331.0 FIGURE 1. VOLTAGE FEEDBACK AMPLIFIER Introduction Voltage Feedback Amplifier The minimum feature size of the MOS transistor has been greatly reduced since its invention just a few decades ago.

PA119CE

Abstract: PA119 15V 5A Power Supply Schematic PA119CEA
Contextual Info: PA119CE • PA119CEA PA119CE • PA119CEA PA119CE, PA119CEA Video Power Operational Amplifier FEATURES • VERY FAST SLEW RATE — 900 V/µs • POWER MOS TECHNOLOGY — 4A peak rating • LOW INTERNAL LOSSES — 0.75V at 2A • PROTECTED OUTPUT STAGE — Thermal Shutoff

3SK121

Abstract: 3SK121 fet 3SK101 Transistor 3sk121 2sc3602 3SK114 3SK102 2SC2804 3SK115 2SC2876
Contextual Info: > MOS FET < •d s s Type No. i N-Channel ' P-channel Application VH F Amp FM RF Cascode Type 2SK241 lYfsl TYP. V DS 'D pd i (V) (mA) (mW) (mA) I I 20 30 200 1.5~14 V ds V GS (V) (V) 10 Y :3 ~ 7 0 : 1 .5 - 3.5 (mS) 10 V ds V GS (V) (V) (PF) 10 10 0.05 -3

SD411HD

Abstract: 1D24 vgd schematic diagram SD5000
Contextual Info: TOPAZ SEMICONDUCTOR OSE D J^GflSaab 0001024 3 | 7~"~ -L T S0411 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE DUAL D-MOS FET ORDERING INFORMATION SD411HD TO-78 Hermetic Package FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ Normally OFF Configuration Low Interelectrode Capacitances

PA119

Abstract: PA119CE
Contextual Info: PA119CE • PA119CEA PA119CE • PA119CEA PA119CE, PA119CEA Video Power Operational Amplifier FEATURES • VERY FAST SLEW RATE — 900 V/µs • POWER MOS TECHNOLOGY — 4A peak rating • LOW INTERNAL LOSSES — 0.75V at 2A • PROTECTED OUTPUT STAGE — Thermal Shutoff

SD5501

Abstract: TELEDYNE SD5501J
Contextual Info: TELEDYNE COMPONENTS 5ÖE D • û ilT b O a GODtiMS4 T SD5501 SEMICONDUCTOR N-CHANNEL DEPLETION-MODE 4-CHANNEL D-MOS FET ARRAY ORDERING INFORMATION Sorted Chips in Waffle Pack 16-Pin Ceramic Dual In-tine Package 16-Pin Plastic Dual In-Line Package SD5501CHP&#39;

Contextual Info: • PA09A PA09PA09 • PA09A PA09, PA09A Power Operational Amplifier FEATURES • POWER MOS TECHNOLOGY — 2A peak rating • HIGH GAIN BANDWIDTH PRODUCT — 150MHz • VERY FAST SLEW RATE — 200V/µs • PROTECTED OUTPUT STAGE — Thermal shutoff • EXCELLENT LINEARITY — Class A/B output

PA09U

Contextual Info: PA09PA09 • PA09A • PA09A PA09, PA09A Power Operational Amplifier FEATURES • POWER MOS TECHNOLOGY — 2A peak rating • HIGH GAIN BANDWIDTH PRODUCT — 150MHz • VERY FAST SLEW RATE — 200V/µs • PROTECTED OUTPUT STAGE — Thermal shutoff • EXCELLENT LINEARITY — Class A/B output

folded cascode rail to rail op amp

Abstract: folded cascode second stage CMOS differential amplifier cascode folded cascode current mirror op amp high end amplifier schematics rail-to-rail differential amplifier AN1306 EL5157 EL5160 EL5411
Contextual Info: Avoid Instability in Rail to Rail CMOS Amplifiers Application Note Introduction The minimum feature size of the MOS transistor has been greatly reduced since its invention just a few decades ago. Reductions in gate oxide thickness, channel length and width have been responsible for a revolutionary reduction in

Contextual Info: PA09 •PA09A APEX MICROTECHINJOLOGY CORPORATION • APPLICATIONS HOTLINE 800 546-APEX 800-5-46-2739 FEATURES • • • • • • • POWER MOS TECHNOLOGY — 2A peak rating HIGH GAIN BANDWIDTH PRODUCT — 150MHz VERY FAST SLEW RATE — 400V/^s PROTECTED OUTPUT STAGE — Thermal shutoff

J FET RF Cascode Input

Abstract: T431 Teledyne Semiconductor teledyne fet u
Contextual Info: TELEDYNE C O M P O N EN T S döE » MI Ö TlTbO H 000 3430 T - US'- b « -S '* SD2100 SEMICONDUCTOR_ N-CHANNEL DEPLETION-MODE D-MOS FET ORDERING INFORMATION TO-2Q6AF (TO-72 Hermetic Package SD2100DË with Shorting Ring on lead«

diagram of ic 7941

Abstract: Teledyne Semiconductor
Contextual Info: eäE TELEDYNE COMPONENTS Ir M Jæ Æ D ÜTL7bü2 QOUb4b7 ? m • Æ TZ5 9 1 1 SEMICONDUCTOR N-CHANNEL DEPLETION-MODE DUAL D-MOS FET ORDERING INFORMATION TQ-78 Hermetic Package TZ5911HD SO-8 Surface Mount Package T259110V FEATURES APPLICATIONS ■ ■ ■ ■

Contextual Info: • PA09A PA09PA09 • PA09A PA09, PA09A Power Operational Amplifier FEATURES • POWER MOS TECHNOLOGY — 2A peak rating • HIGH GAIN BANDWIDTH PRODUCT — 150MHz • VERY FAST SLEW RATE — 200V/µs • PROTECTED OUTPUT STAGE — Thermal shutoff • EXCELLENT LINEARITY — Class A/B output

Contextual Info: FEATURES • • • • • • • POWER MOS TECHNOLOGY — 2A peak rating HIGH GAIN BANDWIDTH PRODUCT — 150MHz VERY FAST SLEW RATE — 4 0 0 V / hs PROTECTED OUTPUT STAGE — Thermal shutoff EXCELLENT LINEARITY — Class A /B output WIDE SUPPLY RANGE — ±12V to ±40V

To206AF

Abstract: SD2100 SD2100DE vgd schematic diagram
Contextual Info: TOPAZ SE MIC ONDUCTOR OSE D Q ^OflSSab 0001053 0 | SE M IC O N D U C T O R _ S D 2 M N-CHANNEL DEPLETION-MODE D-MOS FET ORDERING INFORMATION TO-206AF TO-72 Hermetic Package with Shorting Ring on leads SD2100DE SD2100DE/R Description '•

2SK241

Abstract: 2sk241 mos fet dual-gate DC bias of FET 2SK302
Contextual Info: 3. 3-TERMINAL MOS FET FOR USE AT HIGH-FREQUENCIES 2SK241, 2SK302 nal injector terminal for mixer circuits, and an AGC terminal. However, there is another method as shown in Figure 3.1. This shows a typical high-frequency amplifier in a Hi-Fi tuner. Gate 2 in the figure is