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    MOS 4522 Search Results

    MOS 4522 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MOS 4522 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    eeprom s190

    Abstract: eeprom s130 S507 s331 eeprom Datasheet of 7492 IC 66285 929 rev oh s26 KVP14 KVP18 444-573
    Text: データ・シート MOS 集積回路 MOS Integrated Circuit PD161608 262,144 色カラーTFT 液晶対応 176-RGB x 220 ドット 1 チップ・ドライバ μPD161608 は,TFT 液晶対応の表示コントローラ・ドライバ IC です。また,176-RGB x 220 ドットにより 262,144


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    PDF PD161608 176-RGB IC528 PD161608P S17594JJ2V0DS00 VLCD63 eeprom s190 eeprom s130 S507 s331 eeprom Datasheet of 7492 IC 66285 929 rev oh s26 KVP14 KVP18 444-573

    4606 inverter ic

    Abstract: tf s544 4606 inverter SI 4606 S177 639 ic 7490 pin diagram lts 543 pin configuration IC 7490 pin configuration stv* 4326 internal diagram of 7490 IC
    Text: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT µ PD161606 720 OUTPUTS TFT-LCD SOURCE DRIVER WITH TIMING GENERATOR DESCRIPTION The µ PD161606 is a TFT-LCD source driver that includes display RAM. This driver has 720 outputs, a display RAM capacity of 115,200 bits 240 pixels x 3 bits x 96 lines + α rendering flag of


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    PDF PD161606 PD161606 4606 inverter ic tf s544 4606 inverter SI 4606 S177 639 ic 7490 pin diagram lts 543 pin configuration IC 7490 pin configuration stv* 4326 internal diagram of 7490 IC

    ic 7490 pin diagram

    Abstract: IC 7490 pin configuration internal diagram of 7490 IC RBS 3206 RBS 2954 stp 8055 power supply ic 9435 TO-252 7805 ic 9945 a 8 pin mos RBS 6202
    Text: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT µPD161604 176-RGB x 220-DOT ONE CHIP DRIVER WITH NO RAM DESCRIPTION The µPD161604 is one chip driver for TFT-LCD with 64-gray scale. Data input as RGB interface is outputted as 64 γ corrected values using an internal D/A converter and five external power supply, achieving 262,144-color full-color


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    PDF PD161604 176-RGB 220-DOT PD161604 64-gray 144-color ic 7490 pin diagram IC 7490 pin configuration internal diagram of 7490 IC RBS 3206 RBS 2954 stp 8055 power supply ic 9435 TO-252 7805 ic 9945 a 8 pin mos RBS 6202

    S432 DIODE schottky

    Abstract: DIODE S417 Schottky s448 schottky diode s448 diode diode s526 DIODE S438 eeprom s190 DIODE S526 Schottky diode s426 eeprom s130
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD161608 176-RGB x 220-DOT 1-CHIP DRIVER IC FOR 262,144-COLOR TFT-LCD DISPLAY DESCRIPTION The μPD161608 is TFT-LCD display driver IC. Also, it is possible by 176-RGB x 220-dot to display 262,144 colors. FEATURES • 176-RGB x 220-dot TFT-LCD display driver IC for 262,144 colors 528ch-source driver/220ch-gate driver


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    PDF PD161608 176-RGB 220-DOT 144-COLOR PD161608 528ch-source S432 DIODE schottky DIODE S417 Schottky s448 schottky diode s448 diode diode s526 DIODE S438 eeprom s190 DIODE S526 Schottky diode s426 eeprom s130

    s 452-2

    Abstract: No abstract text available
    Text: Preliminary Product Description SL-4522 The SL-4522 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2200 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


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    PDF SL-4522 SL-4522 SL-45221 SL-45222 SL45221 SL45222 EDS-100946 s 452-2

    Untitled

    Abstract: No abstract text available
    Text: Advance Data Sheet Product Description SL-4522 The SL-4522 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2200 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


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    PDF SL-4522 SL-4522 SL-45221 SL-45222

    2SJ197

    Abstract: No abstract text available
    Text: •7s— S • 5 / — h- NEC ^ MOS M O S Field E ffe c t T ran sis to r 2SJ197 MOS F E T 2SJ197 l i , P f t * V W & MOS F E T T", 5 & ± \ \ z i IC CO ^ - {È • mm) y f- > z i i t - t o h ^ MOS F E T Ü 5}- > m iifr 'i& < , x ^ y f > ^"#14 & i à t l X


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    PDF 2SJ197 2SJ197 O2SK1483

    TC-7986A

    Abstract: 2SK2112 CMS01 7986A diode lt 0236
    Text: zr — *5? N E h ^ > v ^ 3* MOS Field Effect Transistor r j C • :> — h 2 S K 2 1 1 2 MOS FET 2 S K 2 1 1 2 IÎN 3 1 + * ; H Ë M O S F E J T & U , * C ct 5 ¡ t g E K ^ g l * * -f -y T 't o * < - y * > 7 ìS j£ f c jÌt 'f c « > , C D r ^ ^ iX - ^ llE S i ^ ,


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    PDF 2SK2112 oeTi14 a-Ti4S24# TC-7986A CMS01 7986A diode lt 0236

    jft 1411

    Abstract: c947 100 N31 transistor mur 641 M 9619 2SK2109 transistor 9619 nec 7824 ki 30 if 35acr
    Text: K ^ > V J* # MOS Field Effect Transistor 2SK2109 MOS FET 5 £ X < m m 2S K 2 1 0 9 & N 3 1 * *;U « É M O S F E T ? * U , 5 hiz J: 6 ¡t& ÏE S b jF n Jfë fc X < -y ^ > moL :mm ? m T ? to 1.5 ±0.1 <D77 ? ? j . J L - $ m W t f P , D C /D C = ] > / * - £ £ £ i : : j l i S ' ? f o


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    PDF 2SK2109 2SK2109 TC-7983A 484Sife jft 1411 c947 100 N31 transistor mur 641 M 9619 transistor 9619 nec 7824 ki 30 if 35acr

    HC165A

    Abstract: TC9525F VHC165 TC9534N HC4050A HC4520A TC8215uf HC4049A TC24SC HCT164A
    Text: MOS Industrial ICs AD Converter - je Conversion Resolution Time Type No. Conversion Mode Input Channel TC5090AP 8b it 2ms Integration method 1 TC5091AP Bbit 2ms " 6 TC5092AP 13bit 8.2ms ’ 8 TC5093AP 8b it 50ps Successive approximation 8 Output Formst


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    PDF TC5090AP TC5091AP TC5092AP TC5093AP TC35094P TC35095AP/AF TC35096AP/AF TC35097AP TC35098AP TC35080P HC165A TC9525F VHC165 TC9534N HC4050A HC4520A TC8215uf HC4049A TC24SC HCT164A

    AmSYS29

    Abstract: RBS 3106 DEC PDP-11 F-11 MACRO8000 LT 5226 Z8000 RBS 6600 AM8085 RBS 2109 manual book Zilog cross reference
    Text: Advanced Micro Devices AmZ8000 User’s Manual ^1 ^ i . R ra m 'e Y lectron Advanced Micro Devices AmZ8000 User’s Manual The International Standard of Quality guarantees these electrical AQLs on all parameters over the operating tempera­ ture range: 0.1% on MOS RAMs & ROMs;


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    PDF AmZ8000 AmSYS29 RBS 3106 DEC PDP-11 F-11 MACRO8000 LT 5226 Z8000 RBS 6600 AM8085 RBS 2109 manual book Zilog cross reference

    2SK872

    Abstract: IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717
    Text: M O S Field Effect Pow er Transistor 2SK872 N f t ^ ' ° 7 -M O S i 2 S K 8 7 2 i, N T '* > X ^ <, X >f -y f- > / ?• > /''.iii1 !?. # f f l — MOS F E T ( - ¥ - f Ì ! mm *s'i*^ lT J3 tj , ¡ÉfJSlìSEX / D C - D C 3 > ^ '- ^ i:iilt t „ m ° V d ss


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    PDF 2SK872 2SK872 IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717

    r 2501 kk 111

    Abstract: nec 2501 nec 2501 kk 2SK2498 14MQ tea 1020 itt 2501 3Fp 1d r 2501 kk 250
    Text: M O S Field Effect T ran sisto rs 2SK2498 N ^ - V * ; U X -f / \ ° 7 % y 5 1 > I l f 2SK2498liN51^^;UÌÉM M ° 7 - MOS FETT', “ M O S F E T >7 ^ f l * -f 7 51> T & , & f ê 7 7? ? ü . J . - 2 f f l W j ï ï ï à 3P Z < " jïX fW fà ïïià ^ M 'M T 'to


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    PDF 2SK2498 2SK2498Â M/N07- MP-45F O-220) D10044JJ1V0DS00 r 2501 kk 111 nec 2501 nec 2501 kk 2SK2498 14MQ tea 1020 itt 2501 3Fp 1d r 2501 kk 250

    2SJ411

    Abstract: TC-8022 ru 4c diode
    Text: MOS h 7 > y 'X i! M OS Field Effect Transistor 2SJ411 ? ± \s M OS FET X 2S J411 it P 5 1 -V M O S F E T T \ 5 ' V M y ^ :M % > ^ 7 m 1C O t ± i * t C J: 5 ¡ t & S K t ! ) m m e : mm) 7.0 MAX. y - n m z i 7 ^ ^ . d c/d c = 3 > / 'i- ^ * if ic g ia - ? - r 0


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    PDF 2SJ411 IEI-620) 2SJ411 TC-8022 ru 4c diode

    j353

    Abstract: j353 transistor transistor a935 transistor 5cw a935 transistor 2SJ353
    Text: • S ' — h NEC S > v X ^ MOS Field Effect Transistor 2SJ353 P ^ Ÿ T 'v O / M O S F E T v j - x f m 2 S J3 5 3 t è P 3 1 Ÿ * > 'M W M O S F E T 7 \ 5 V t iÜ Ê IC C f t t t i* m m m it : mm 1C * -r ^ 5 1 > ? i f ^-e-r 0 j: > im .iffc < * * ¥ & « :*


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    PDF 2SJ353 j353 j353 transistor transistor a935 transistor 5cw a935 transistor 2SJ353

    2sk82

    Abstract: ifoc 2SK823 JI 32
    Text: M O S Field E ffe ct P o w e r T ran sis to r 2SK823 N f t ^ N 7 -M O S I 2S K 823Ü , l f f l > h ^ > * T7 — MOS F E T ffii/CM S < , X - i -? -f > FET £|-5f£[21 W Ì : mm T ? f • f l T Ü >), ÏÜJSÎÈX ^ <y -f > r « - i i 4 . 7 MA X . 15 . 7 M A X .


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    PDF 2SK823 2sk82 ifoc 2SK823 JI 32

    Untitled

    Abstract: No abstract text available
    Text: NEC S t •is — h MOS M O S F ield E ffe c t P o w e r T ra n s is to r 2SK1122 7 N + * J W < r7 — 4 x N f t i'i« / N " 7 - M 0 S i : U ^ > ÎEÎA^'fS < , X j 'i / 7 i fc, l 5 V SïÜÎ3UC<7 M ÎÎ ’ mm) f-'j -r f > ^"#'14 b iStiX^^ôfzàb, 7 K,


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    PDF 2SK1122

    20nf10

    Abstract: MC14622
    Text: MOTOROLA SC {LOGÌC>~Tfl 6367252„M O TO R O LA M SC Ê | b3b72S5 007T727 98D L O G IC 4 J “ 79727 MC14522B MC14526B O T O R O L A CMOS MSI (LOW -POW ER C O M P L E M E N T A R Y MOS) P R E S E T T A B L E 4 - B IT D O W N C O U N T E R S PRESETTABLE


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    PDF b3b72S5 007T727 MC14522B MC14526B 20nf10 MC14622

    fcf - 4 94v - 0 _ 1

    Abstract: FZJ 131 IC-9083 UP1713 75tti 3tf 31 n4 umi D1713 MTI BD ic9083
    Text: i. I I ÎK I M E C Y ^ MOS M O S # [l]fê In te g r a te d C ir c u it /¿ P D 1 7 1 3 4 B ,1 7 1 3 6 B '¡ 'm 4 fcÎ 7 h • u m 'y y 0 * h P - 7 ¿¿PD17134B, 17136BÌÌ, 8 fcT'y h A/D 3 >/<— $ 4 ^ * ; u , ? < (3 ^ + * ; u ) , A C - t z P ^ P ^ f è


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    PDF uPD17134B uPD17136B //PD17134 fcf - 4 94v - 0 _ 1 FZJ 131 IC-9083 UP1713 75tti 3tf 31 n4 umi D1713 MTI BD ic9083

    2sk1150

    Abstract: b 772 my1 PS7K 2SK 1411 t8506
    Text: MOS M O S F ield E ffe c t P o w e r T ra n s is to r S 2 7 N x — *y * M O S F E K 1 1 5 T > I t f f l 2SK 1150 Ü , * N f - i$ ;« ^ - 7 - M \z j : b 7 * > m t# < , -i f > F E T f, 5V I C <50tti - 9 , ^ ^ I g g j^ ^ N '- y r ^ .fi : mm / t f t - t .


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    PDF 2SK1150 50tti 2sk1150 b 772 my1 PS7K 2SK 1411 t8506

    TC7988

    Abstract: 2SK2158 MARKING J1A transistor WT7 J Fet marking 2 AW marking N00 3250Q
    Text: M O STféïl-f^ jÎJiP: h 37 > v J X ^ M O S Field Effect Transistor r ^ j_ C I E • •fc I ÌK N 2 S K 2 1 5 8 MOS FET r ü iH X -f y 2 S K 2 1 5 8 I Î1.5 V l E l i £ -f U , fÉ ÎŒ T ig B T 't , ÿ 9 Æ3 * J U i ^ M O S F E T T 5* A 'O K -7 - f 'V y


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    PDF 2SK2158 2SK2158Ià 73pDpà IEI-620) 1-N00 TC7988 2SK2158 MARKING J1A transistor WT7 J Fet marking 2 AW marking N00 3250Q

    BS 551

    Abstract: No abstract text available
    Text: C o m p o un d Field Effect P o w e r T ran s is to r fiPA1640 i y j y 7 ^ H PA 1 640 i, 2 - IN P U T A N D ^ f - 4 /\° 7 ~ MOS FET 7 K 8 [ U S M iJ & N ? 1+ h Z ^ it Z M OS FET T K T 'T c t lE N A B L E iS ii^ - l/ T U 'S - r o 0 ^ - 7 °> K K O B l± > W * T #7 < - V - K ^ ^ ^ T ' - T c


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    PDF uPA1640 PA1640GS -Tg17# BS 551

    Untitled

    Abstract: No abstract text available
    Text: R&E INTERNATIONAL, INC. 4522B 4526B CMOS PROGRAMMABLE DOWN COUNTERS FEATURES ♦ Internally Synchronous fo r High Speed ♦ BCD Dacada 4522B or 4-B it Binary I4526B) Down Counters 4 Asychronous Preset Enable ♦ Asynchronous Reset ♦ Cascadable ♦ Logic Edge-Clocked Design


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    PDF 4522B 4526B 4522B) I4526B) 4526B

    Untitled

    Abstract: No abstract text available
    Text: 4522B 4526B R&E INTERNATIONAL, INC. CMOS PROGRAMMABLE DOWN COUNTERS FEATURES ♦ ♦ Internally Synchronous fo r High Speed BCD Decade 4522B or 4-Bit Binary (4526B) Down Counters 4 Asychronous Preset Enable 4 Asynchronous Reset ♦ Cascadable ♦ Logic Edge-Clocked Design


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    PDF 4522B 4526B 4522B) 4526B) 10Vdc 4522B 4526B