MOS 4522 Search Results

2SJ197

Contextual Info: •7s— S • 5 / — h- NEC ^ MOS M O S Field E ffe c t T ran sis to r 2SJ197 MOS F E T 2SJ197 l i , P f t * V W & MOS F E T T", 5 & ± \ \ z i IC CO ^ - {È • mm) y f- > z i i t - t o h ^ MOS F E T Ü 5}- > m iifr 'i& < , x ^ y f > ^"#14 & i à t l X

TC-7986A

Abstract: 2SK2112 CMS01 7986A diode lt 0236
Contextual Info: zr — *5? N E h ^ > v ^ 3* MOS Field Effect Transistor r j C • :> — h 2 S K 2 1 1 2 MOS FET 2 S K 2 1 1 2 IÎN 3 1 + * ; H Ë M O S F E J T & U , * C ct 5 ¡ t g E K ^ g l * * -f -y T 't o * < - y * > 7 ìS j£ f c jÌt 'f c « > , C D r ^ ^ iX - ^ llE S i ^ ,

eeprom s190

Abstract: eeprom s130 S507 s331 eeprom Datasheet of 7492 IC 66285 929 rev oh s26 KVP14 KVP18 444-573
Contextual Info: データ・シート MOS 集積回路 MOS Integrated Circuit PD161608 262,144 色カラーTFT 液晶対応 176-RGB x 220 ドット 1 チップ・ドライバ μPD161608 は，TFT 液晶対応の表示コントローラ・ドライバ IC です。また，176-RGB x 220 ドットにより 262,144

jft 1411

Abstract: c947 100 N31 transistor mur 641 M 9619 2SK2109 transistor 9619 nec 7824 ki 30 if 35acr
Contextual Info: K ^ > V J* # MOS Field Effect Transistor 2SK2109 MOS FET 5 £ X < m m 2S K 2 1 0 9 & N 3 1 * *;U « É M O S F E T ? * U , 5 hiz J: 6 ¡t& ÏE S b jF n Jfë fc X < -y ^ > moL :mm ? m T ? to 1.5 ±0.1 <D77 ? ? j . J L - $ m W t f P , D C /D C = ] > / * - £ £ £ i : : j l i S ' ? f o

HC165A

Abstract: TC9525F VHC165 TC9534N HC4050A HC4520A TC8215uf HC4049A TC24SC HCT164A
Contextual Info: MOS Industrial ICs AD Converter - je Conversion Resolution Time Type No. Conversion Mode Input Channel TC5090AP 8b it 2ms Integration method 1 TC5091AP Bbit 2ms " 6 TC5092AP 13bit 8.2ms ’ 8 TC5093AP 8b it 50ps Successive approximation 8 Output Formst

AmSYS29

Abstract: RBS 3106 DEC PDP-11 F-11 MACRO8000 LT 5226 Z8000 RBS 6600 AM8085 RBS 2109 manual book Zilog cross reference
Contextual Info: Advanced Micro Devices AmZ8000 User’s Manual ^1 ^ i . R ra m 'e Y lectron Advanced Micro Devices AmZ8000 User’s Manual The International Standard of Quality guarantees these electrical AQLs on all parameters over the operating tempera­ ture range: 0.1% on MOS RAMs & ROMs;

4606 inverter ic

Abstract: tf s544 4606 inverter SI 4606 S177 639 ic 7490 pin diagram lts 543 pin configuration IC 7490 pin configuration stv* 4326 internal diagram of 7490 IC
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT µ PD161606 720 OUTPUTS TFT-LCD SOURCE DRIVER WITH TIMING GENERATOR DESCRIPTION The µ PD161606 is a TFT-LCD source driver that includes display RAM. This driver has 720 outputs, a display RAM capacity of 115,200 bits 240 pixels x 3 bits x 96 lines + α rendering flag of

ic 7490 pin diagram

Abstract: IC 7490 pin configuration internal diagram of 7490 IC RBS 3206 RBS 2954 stp 8055 power supply ic 9435 TO-252 7805 ic 9945 a 8 pin mos RBS 6202
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT µPD161604 176-RGB x 220-DOT ONE CHIP DRIVER WITH NO RAM DESCRIPTION The µPD161604 is one chip driver for TFT-LCD with 64-gray scale. Data input as RGB interface is outputted as 64 γ corrected values using an internal D/A converter and five external power supply, achieving 262,144-color full-color

2SK872

Abstract: IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717
Contextual Info: M O S Field Effect Pow er Transistor 2SK872 N f t ^ ' ° 7 -M O S i 2 S K 8 7 2 i, N T '* > X ^ <, X >f -y f- > / ?• > /''.iii1 !?. # f f l — MOS F E T ( - ¥ - f Ì ! mm *s'i*^ lT J3 tj , ¡ÉfJSlìSEX / D C - D C 3 > ^ '- ^ i:iilt t „ m ° V d ss

S432 DIODE schottky

Abstract: DIODE S417 Schottky s448 schottky diode s448 diode diode s526 DIODE S438 eeprom s190 DIODE S526 Schottky diode s426 eeprom s130
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD161608 176-RGB x 220-DOT 1-CHIP DRIVER IC FOR 262,144-COLOR TFT-LCD DISPLAY DESCRIPTION The μPD161608 is TFT-LCD display driver IC. Also, it is possible by 176-RGB x 220-dot to display 262,144 colors. FEATURES • 176-RGB x 220-dot TFT-LCD display driver IC for 262,144 colors 528ch-source driver/220ch-gate driver

r 2501 kk 111

Abstract: nec 2501 nec 2501 kk 2SK2498 14MQ tea 1020 itt 2501 3Fp 1d r 2501 kk 250
Contextual Info: M O S Field Effect T ran sisto rs 2SK2498 N ^ - V * ; U X -f / \ ° 7 % y 5 1 > I l f 2SK2498liN51^^;UÌÉM M ° 7 - MOS FETT', “ M O S F E T >7 ^ f l * -f 7 51> T & , & f ê 7 7? ? ü . J . - 2 f f l W j ï ï ï à 3P Z < " jïX fW fà ïïià ^ M 'M T 'to

2SJ411

Abstract: TC-8022 ru 4c diode
Contextual Info: MOS h 7 > y 'X i! M OS Field Effect Transistor 2SJ411 ? ± \s M OS FET X 2S J411 it P 5 1 -V M O S F E T T \ 5 ' V M y ^ :M % > ^ 7 m 1C O t ± i * t C J: 5 ¡ t & S K t ! ) m m e : mm) 7.0 MAX. y - n m z i 7 ^ ^ . d c/d c = 3 > / 'i- ^ * if ic g ia - ? - r 0

ABB 07 kr 240

Abstract: IC-8176 12h24 fbii nitto GE D6453 T108 ptc PD6453 PD6453GT-101
Contextual Info: M O S*tt0 SS MOS Integrated Circuit u P D645 3 CMOS LSI ’V'f ?n=r > £ * - ? izffiAfr b l t X TV, t ' T * * T -i X 9 & £ // P D 6 4 5 3 i , _hC H ^iJ, -f-v V 7 > /f ffl C M 0 S L S I T ' T o fz, • -? -> '< & • h ' 6 0 X :? : £ ^ 7 * t ~ & ^ ' > • x ; iJ - > ' ^ - V 7 ^ i ' * f V X

j353

Abstract: j353 transistor transistor a935 transistor 5cw a935 transistor 2SJ353
Contextual Info: • S ' — h NEC S > v X ^ MOS Field Effect Transistor 2SJ353 P ^ Ÿ T 'v O / M O S F E T v j - x f m 2 S J3 5 3 t è P 3 1 Ÿ * > 'M W M O S F E T 7 \ 5 V t iÜ Ê IC C f t t t i* m m m it : mm 1C * -r ^ 5 1 > ? i f ^-e-r 0 j: > im .iffc < * * ¥ & « :*

Contextual Info: NEC S t •is — h MOS M O S F ield E ffe c t P o w e r T ra n s is to r 2SK1122 7 N + * J W < r7 — 4 x N f t i'i« / N " 7 - M 0 S i : U ^ > ÎEÎA^'fS < , X j 'i / 7 i fc, l 5 V SïÜÎ3UC<7 M ÎÎ ’ mm) f-'j -r f > ^"#'14 b iStiX^^ôfzàb, 7 K,

20nf10

Abstract: MC14622
Contextual Info: MOTOROLA SC {LOGÌC>~Tfl 6367252„M O TO R O LA M SC Ê | b3b72S5 007T727 98D L O G IC 4 J “ 79727 MC14522B MC14526B O T O R O L A CMOS MSI (LOW -POW ER C O M P L E M E N T A R Y MOS) P R E S E T T A B L E 4 - B IT D O W N C O U N T E R S PRESETTABLE

fcf - 4 94v - 0 _ 1

Abstract: FZJ 131 IC-9083 UP1713 75tti 3tf 31 n4 umi D1713 MTI BD ic9083
Contextual Info: i. I I ÎK I M E C Y ^ MOS M O S # [l]fê In te g r a te d C ir c u it /¿ P D 1 7 1 3 4 B ,1 7 1 3 6 B '¡ 'm 4 fcÎ 7 h • u m 'y y 0 * h P - 7 ¿¿PD17134B, 17136BÌÌ, 8 fcT'y h A/D 3 >/<— $ 4 ^ * ; u , ? < (3 ^ + * ; u ) , A C - t z P ^ P ^ f è

2sk1150

Abstract: b 772 my1 PS7K 2SK 1411 t8506
Contextual Info: MOS M O S F ield E ffe c t P o w e r T ra n s is to r S 2 7 N x — *y * M O S F E K 1 1 5 T > I t f f l 2SK 1150 Ü , * N f - i$ ;« ^ - 7 - M \z j : b 7 * > m t# < , -i f > F E T f, 5V I C <50tti - 9 , ^ ^ I g g j^ ^ N '- y r ^ .fi : mm / t f t - t .

TC7988

Abstract: 2SK2158 MARKING J1A transistor WT7 J Fet marking 2 AW marking N00 3250Q
Contextual Info: M O STféïl-f^ jÎJiP: h 37 > v J X ^ M O S Field Effect Transistor r ^ j_ C I E • •fc I ÌK N 2 S K 2 1 5 8 MOS FET r ü iH X -f y 2 S K 2 1 5 8 I Î1.5 V l E l i £ -f U , fÉ ÎŒ T ig B T 't , ÿ 9 Æ3 * J U i ^ M O S F E T T 5* A 'O K -7 - f 'V y

BS 551

Contextual Info: C o m p o un d Field Effect P o w e r T ran s is to r fiPA1640 i y j y 7 ^ H PA 1 640 i, 2 - IN P U T A N D ^ f - 4 /\° 7 ~ MOS FET 7 K 8 [ U S M iJ & N ? 1+ h Z ^ it Z M OS FET T K T 'T c t lE N A B L E iS ii^ - l/ T U 'S - r o 0 ^ - 7 °> K K O B l± > W * T #7 < - V - K ^ ^ ^ T ' - T c

Contextual Info: R&E INTERNATIONAL, INC. 4522B 4526B CMOS PROGRAMMABLE DOWN COUNTERS FEATURES ♦ Internally Synchronous fo r High Speed ♦ BCD Dacada 4522B or 4-B it Binary I4526B) Down Counters 4 Asychronous Preset Enable ♦ Asynchronous Reset ♦ Cascadable ♦ Logic Edge-Clocked Design

s 452-2

Contextual Info: Preliminary Product Description SL-4522 The SL-4522 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2200 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

Contextual Info: 4522B 4526B R&E INTERNATIONAL, INC. CMOS PROGRAMMABLE DOWN COUNTERS FEATURES ♦ ♦ Internally Synchronous fo r High Speed BCD Decade 4522B or 4-Bit Binary (4526B) Down Counters 4 Asychronous Preset Enable 4 Asynchronous Reset ♦ Cascadable ♦ Logic Edge-Clocked Design

Contextual Info: Advance Data Sheet Product Description SL-4522 The SL-4522 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2200 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power