FMV30N60S1
Abstract: 30N60 FMV30
Text: / FMV30N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg
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FMV30N60S1
O-220F
FMV30N60S1
30N60
FMV30
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FMW30N60S1
Abstract: FMW30N60S1HF 30N60S
Text: / FMW30N60S1HF FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg
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FMW30N60S1HF
O-247-P2
FMW30N60S1
FMW30N60S1HF
30N60S
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30N60S1
Abstract: FMP30N60S1 30N60S fuji electric lot code fuji lot code mosfet 452
Text: / FMP30N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] +0.5 4.5±0.2 1.3±0.2 2.7 ±0.1 10 Ø3.6 6.4 ±0.2 ±0.2 UPS Server Telecom Power conditioner system
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FMP30N60S1
O-220
O-220AB
30N60S1
FMP30N60S1
30N60S
fuji electric lot code
fuji lot code
mosfet 452
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FMH30N60S1
Abstract: FMH30N60 SCHEMATIC ups 600V 20A N-Channel MOSFET TO-3P 30N60S
Text: / FMH30N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] TO-3P 13 ± 0.2 4.5±0.2 Drain D UPS Server Telecom Power conditioner system Power supply 1.6
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FMH30N60S1
FMH30N60S1
FMH30N60
SCHEMATIC ups
600V 20A N-Channel MOSFET TO-3P
30N60S
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30n60a4d
Abstract: 30n60a4 HGTG30N60A4D TA49373 HGTG*N60A4D LD26 TA49343 TA49345
Text: HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG30N60A4D
HGTG30N60A4D
150oC.
TA49343.
TA49373.
30n60a4d
30n60a4
TA49373
HGTG*N60A4D
LD26
TA49343
TA49345
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30N60A4
Abstract: 30N60A4D HGTG*N60A4D 30n60 hgtp30n60a4 hgtg30n60a4d TA49373 30N60A HGTP30N60A4D TA49345
Text: HGTG30N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG30N60A4D
HGTG30N60A4D
150oC.
TA49343.
TA49373.
30N60A4
30N60A4D
HGTG*N60A4D
30n60
hgtp30n60a4
TA49373
30N60A
HGTP30N60A4D
TA49345
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30n60a4d
Abstract: 30N60A4 TA49373 hgtp30n60a4 TA49343 HGTG30N60A4D LD26 TA49345 HGTG*N60A4D
Text: HGTG30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG30N60A4D
HGTG30N60A4D
150oC.
TA49343.
TA49373.
30n60a4d
30N60A4
TA49373
hgtp30n60a4
TA49343
LD26
TA49345
HGTG*N60A4D
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30N60A4D
Abstract: No abstract text available
Text: HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG30N60A4D
HGTG30N60A4D
150oC.
TA49343.
TA49373.
30N60A4D
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30N60A4D
Abstract: TA49373 30N60A4 HGTG30N60A4D TA49345 ICE 280 TA49343 30N60A
Text: HGTG30N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG30N60A4D
HGTG30N60A4D
150oC.
TA49343.
TA49373.
30N60A4D
TA49373
30N60A4
TA49345
ICE 280
TA49343
30N60A
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30n60a4d
Abstract: 30N60A4 TA49345 30N60A 30n60* 227 HGT1N30N60A4D LD26 TA49373 SOT227B
Text: HGT1N30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input
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HGT1N30N60A4D
HGT1N30N60A4D
150oC.
100kHz
30n60a4d
30N60A4
TA49345
30N60A
30n60* 227
LD26
TA49373
SOT227B
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BTS 3900 a
Abstract: BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1
Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a com bination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltage-controlled properties of M OSFETs. A dvantages to the user: • rugged, short-circuit-proof device
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T-227B
BTS 3900 a
BTS 3900
12N60
BTS 3900 l
35N120U1
24n60
52N60A
IXSH 35N120AU1
35n120u
35N120AU1
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30N60A4D
Abstract: mj 1504 transistor equivalent 30N60A4 HGT1N30N60A4D 30n60* 227 transistor mj 1504 transistors mj 1504 TA49373
Text: HGT1N30N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode General Description Features The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the
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HGT1N30N60A4D
HGT1N30N60A4D
150oC.
TA49345.
100kHz
30N60A4D
mj 1504 transistor equivalent
30N60A4
30n60* 227
transistor mj 1504
transistors mj 1504
TA49373
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30n60a4d
Abstract: mj 1504 transistor equivalent TA49345 HGT1N30N60A4D hyperfast diode reference guide TA49373 30n60* 227 30N60A4 LD26
Text: HGT1N30N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode General Description Features The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the
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HGT1N30N60A4D
HGT1N30N60A4D
150oC.
100kHz
30n60a4d
mj 1504 transistor equivalent
TA49345
hyperfast diode reference guide
TA49373
30n60* 227
30N60A4
LD26
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30N60A4D
Abstract: TA49373 30N60A4 TA49345 TA49343 hgtp30n60a4d HGTG30N60A4D TIL-220 HGTG*N60A4D la 4830 ic
Text: i n t e HGTG30N60A4D r r i i J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG30N60A4D
HGTG30N60A4D
TA49343.
TA49373.
30N60A4D
TA49373
30N60A4
TA49345
TA49343
hgtp30n60a4d
TIL-220
HGTG*N60A4D
la 4830 ic
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30n60
Abstract: igbt 30N60 30N60A IXYS 30N60 mos 30N60 30n60 equivalent ixsm equivalent for 30n60 30N60U1 030N60
Text: Low VCE sat IGBT High Speed IGBT IXSH/IXSM IXSH/IXSM 30N60 30N60A VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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30N60
30N60A
O-247
O-204AE
30n60
igbt 30N60
30N60A
IXYS 30N60
mos 30N60
30n60 equivalent
ixsm
equivalent for 30n60
30N60U1
030N60
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30N60C2
Abstract: 728B1 123B1
Text: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 30N60C2 IXGT 30N60C2 C2-Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20
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30N60C2
30N60C2
IC110
O-268
O-247
065B1
728B1
123B1
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30N60C2D1
Abstract: v922
Text: Advance Technical Data HiPerFASTTM IGBT with Diode C2-Class High Speed IGBTs Symbol Test Conditions IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES
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30N60C2D1
IC110
O-247
O-268
065B1
728B1
123B1
v922
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30n60
Abstract: No abstract text available
Text: DIXYS IXSH 30N60 VCES Low VCE sat IGBT High Speed IGBT IC25 v * CE(sat) 600 V 50 A 2.5 V Short Circuit SOA Capability TO-247 AD Symbol Test Conditions v CES Tj =25°C to 150°C 600 V v CGR Tj = 25° C to 150° C; RQE= 1 MQ 600 V v GES Continuous 420 V v GEM
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30N60
O-247
100HH
30N60AU1
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30N60BS
Abstract: No abstract text available
Text: HiPerFAST IGBT VCES IXGH 30N60B IXGH 30N60BS ^C25 VCE sat = 600 V = 60 A = 1.8V = 130 ns P relim in ary data Symbol Test Conditions V CES T j = 25°C to 150°C Maximum Ratings 600 V vCGR T j = 25°C to 150“C; RGE = 1 MD 600 V v GES vGEM Continuous ±20
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30N60B
30N60BS
O-247
30N60BS)
30N60BS
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1XYS
Abstract: No abstract text available
Text: a ix Y S 1 Preliminary Data Sheet v CES IXGH 30N60B IXGH 30N60BS ^C25 vv CE sat HiPerFAST IGBT = 600 V = 60 A = 1.8 V = 130 ns tfi TO-247 SMD (30N60BS) Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RQE= 1 M il
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30N60B
30N60BS
13/10Nm/lb
O-247
1XYS
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Untitled
Abstract: No abstract text available
Text: □ IXYS Low V CE sat „ , „ IGBT High Speed IGBT IXSH/IXSM IXSH/IXSM 30N60 30N60A v CES ^C25 V C E (sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i
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30N60
30N60A
O-247
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30n60
Abstract: N60A mos 30N60 igbt 30N60 30N60A GE1001 IXYS 30N60 30n60 igbt
Text: H Y Y JL ^ sIk»!? flHVwÎ A- Low VC„, ,. IGBT E s a t High Speed IGBT ix s h /ix s m IXSH/IXSM 30N60 30N60A v CES ^C25 V CE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test C onditions Maximum Ratings V CES Td = 25°C to 150°C
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30N60
30N60A
O-247
O-204
30N60U1
30N60AU1
N60A
mos 30N60
igbt 30N60
GE1001
IXYS 30N60
30n60 igbt
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30N60BD
Abstract: No abstract text available
Text: nixYS Advanced Technical Information HiPerFAST IGBT with Diode IXGH 30N60BD1 IXGT 30N60BD1 ^fi typ Symbol Test Conditions VCEs Tj = 25°Cto 150UC 600 V v CGB T,J = 25cC to 150°C ;R Cat =1 MU 600 V v G ES Continuous +20 V VG EM Transient ±30 V ^C25 Tc =25°C
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30N60BD1
30N60BD1
150UC
O-268
O-247
15BSC~
30N60BD
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode IXGH 30N60BU1 VCES IXGT 30N60BU1 IC25 VCE sat tfi = 600 V = 60 A = 1.8 V = 100 ns TO-268 (IXGT) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous
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30N60BU1
O-268
IC110
30N60BU1
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