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    MOROCCO B 108 B Search Results

    MOROCCO B 108 B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    9DB108BGLFT Renesas Electronics Corporation 8-output Differential Buffer for PCIe Gen1 Visit Renesas Electronics Corporation
    R5F52108BGFB#10 Renesas Electronics Corporation High Performance, Low Power 32-bit Microcontrollers Supporting Large Capacity Memory Visit Renesas Electronics Corporation
    R5F52108BGFB#30 Renesas Electronics Corporation High Performance, Low Power 32-bit Microcontrollers Supporting Large Capacity Memory Visit Renesas Electronics Corporation
    R5F52108BDLK#U0 Renesas Electronics Corporation High Performance, Low Power 32-bit Microcontrollers Supporting Large Capacity Memory Visit Renesas Electronics Corporation
    9DB108BGLF Renesas Electronics Corporation 8-output Differential Buffer for PCIe Gen1 Visit Renesas Electronics Corporation

    MOROCCO B 108 B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    choke vk200

    Abstract: VK200 rfc vk200 rfc with 6 turns STMicroelectronics marking code date SD1460 marking code stmicroelectronics vk200 rf choke VK200-19/4B STMicroelectronics marking code Date Code Marking STMicroelectronics
    Text: SD1460 RF POWER BIPOLAR TRANSISTORS FM BROADCAST APPLICATIONS FEATURES SUMMARY • 108 MHz Figure 1. Package ■ 28 VOLTS ■ EFFICIENCY 75% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 150 W MIN. WITH 9.2 dB GAIN DESCRIPTION The SD1460 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for VHF FM


    Original     		PDF SD1460 SD1460 choke vk200 VK200 rfc vk200 rfc with 6 turns STMicroelectronics marking code date marking code stmicroelectronics vk200 rf choke VK200-19/4B STMicroelectronics marking code Date Code Marking STMicroelectronics

    M252

    Abstract: SD56150
    Text: SD56150 RF POWER TRANSISTORS The LdmoST FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSHPULL • POUT = 150 W WITH 13 dB gain @ 860 MHz /32V • BeO FREE PACKAGE M252 epoxy sealed


    Original     		PDF SD56150 SD56150 M252

    LET8180

    Abstract: M252
    Text: LET8180 RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 220 W with 17 dB TYP. gain @ 860 MHz • BeO FREE PACKAGE M252


    Original     		PDF LET8180 LET8180 M252

    ESM6045AV

    Abstract: No abstract text available
    Text: ESM6045AV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    Original     		PDF ESM6045AV ESM6045AV

    ESM6045AV

    Abstract: No abstract text available
    Text: ESM6045AV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE 4 3 1 INDUSTRIAL APPLICATIONS:


    Original     		PDF ESM6045AV ESM6045AV

    diode BZW50-56

    Abstract: BZW50-10 BZW50-12 BZW50-15 BZW50-18 BZW50-22 BZW50-27 BZW50-33 BZW50-39 BZW50-47
    Text: BZW50-10,B/180,B  TRANSILTM FEATURES PEAK PULSE POWER : 5000 W 10/1000µs STAND-OFF VOLTAGERANGE : From 10V to 180V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION AG Transil diodes provide high overvoltage protection


    Original     		PDF BZW50-10 B/180 diode BZW50-56 BZW50-12 BZW50-15 BZW50-18 BZW50-22 BZW50-27 BZW50-33 BZW50-39 BZW50-47

    diode BZW50-56

    Abstract: DIODE bzw50-33 BZW50-33B BZW50-15 BZW50-18 BZW50-22 BZW50-27 BZW50-33 BZW50-39 BZW50-47
    Text: BZW50-10,B/180,B TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 5000 W 10/1000µs STAND-OFF VOLTAGE RANGE : From 10V to 180V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION R6 Transil diodes provide high overvoltage protection


    Original     		PDF BZW50-10 B/180 diode BZW50-56 DIODE bzw50-33 BZW50-33B BZW50-15 BZW50-18 BZW50-22 BZW50-27 BZW50-33 BZW50-39 BZW50-47

    STF6045AV

    Abstract: RC VOLTAGE CLAMP snubber circuit
    Text: STF6045AV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    Original     		PDF STF6045AV STF6045AV RC VOLTAGE CLAMP snubber circuit

    F126

    Abstract: TP30-100 TP30-120 TP30-130 TP30-180 TP30-200 TP30-220 TP30-62 TP30-68 BELLCORETR-NWT-000974
    Text: TP30-xxx Series TRISILTM PRELIMINARY DATASHEET FEATURES BIDIRECTIONAL CROWBAR PROTECTION. VOLTAGE RANGE: FROM 62 V TO 270 V. HOLDING CURRENT : IH = 150 mA min. REPETITIVE PEAK PULSE CURRENT : IPP = 30 A, 10/1000 µs. JEDEC REGISTERED PACKAGE OUTLINE F126 DESCRIPTION


    Original     		PDF TP30-xxx TR-1089-CORE: BELLCORETR-NWT-000974: F126 TP30-100 TP30-120 TP30-130 TP30-180 TP30-200 TP30-220 TP30-62 TP30-68 BELLCORETR-NWT-000974

    TSH151

    Abstract: TSH151C TSH151I
    Text: TSH151 WIDE BANDWIDTH AND MOS INPUTS SINGLE OPERATIONAL AMPLIFIER LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SLEW RATE : 200V/µs VERY FAST SETTLING TIME : 70ns 0.1% VERY HIGH INPUT IMPEDANCE DESCRIPTION: The TSH151 is a wideband monolithic operational


    Original     		PDF TSH151 150MHz TSH151 TSH151C TSH151I

    H150

    Abstract: TSH150 TSH150C TSH150I TSH150M
    Text: TSH150 WIDE BANDWIDTH AND BIPOLAR INPUTS SINGLE OPERATIONAL AMPLIFIER LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SLEW RATE : 190V/µs VERY FAST SETTLING TIME : 20ns 0.1% N DIP8 (Plastic Package) DESCRIPTION: The TSH150 is a wideband monolithic operational


    Original     		PDF TSH150 150MHz TSH150 MILSTD883CClass2. H150 TSH150C TSH150I TSH150M

    SMP30-100

    Abstract: SMP30-120 SMP30-130 SMP30-180 SMP30-200 SMP30-220 SMP30-62 SMP30-68 crowbar 2kV 38a sma package
    Text: SMP30-xxx Series TRISILTM PRELIMINARY DATASHEET FEATURES BIDIRECTIONAL CROWBAR PROTECTION. VOLTAGE RANGE: FROM 62 V TO 270 V. HOLDING CURRENT : IH = 150 mA min. REPETITIVE PEAK PULSE CURRENT : IPP = 30 A, 10/1000 µs. JEDEC REGISTERED PACKAGE OUTLINE SMA JEDEC DO-214AA


    Original     		PDF SMP30-xxx DO-214AA) TR-1089-CORE: BELLCORETR-NWT-000974: SMP30-100 SMP30-120 SMP30-130 SMP30-180 SMP30-200 SMP30-220 SMP30-62 SMP30-68 crowbar 2kV 38a sma package

    BZW50-100B

    Abstract: No abstract text available
    Text: BZW50-10,B/180,B TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 5000 W 10/1000µs STAND-OFF VOLTAGE RANGE : From 10V to 180V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION AG Transil diodes provide high overvoltage protection


    Original     		PDF BZW50-10 B/180 BZW50-100B

    TSH150

    Abstract: TSH150I
    Text: TSH150 WIDE BANDWIDTH AND BIPOLAR INPUTS SINGLE OPERATIONAL AMPLIFIER • ■ ■ ■ ■ LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SLEW RATE : 190V/µs VERY FAST SETTLING TIME : 20ns 0.1% DESCRIPTION The TSH150 is a wideband monolithic operational


    Original     		PDF TSH150 150MHz TSH150 MILSTD883C-Class2. TSH150I

    marking code w17

    Abstract: marking W17 Marking W35 marking W07 W39 marking SMTPB120 SMTPB130 SMTPB180 SMTPB200 SMTPB220
    Text: SMTPB SERIES TRISIL . . FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWN VOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT = 150 mA min PEAK PULSE CURRENT : IPP = 90 A, 10/1000 µs. SOD 15 DESCRIPTION Plastic The SMTPBxx series has been designed to


    Original     		PDF

    NPN DARLINGTON POWER module isotop

    Abstract: isotop bipolar CIRCUIT DIAGRAM UPS schematic diagram UPS smps 450 W SMPS IC 2003 UPS circuit diagram ESM6045AV
    Text: ESM6045AV NPN DARLINGTON POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE • ■ ■ ■ ■ ■ INDUSTRIAL APPLICATIONS:


    Original     		PDF ESM6045AV NPN DARLINGTON POWER module isotop isotop bipolar CIRCUIT DIAGRAM UPS schematic diagram UPS smps 450 W SMPS IC 2003 UPS circuit diagram ESM6045AV

    smb marking U01

    Abstract: SMTPA100 SMTPA120 SMTPA130 SMTPA180 SMTPA200 SMTPA220 SMTPA62 SMTPA68 VDE0433
    Text: SMTPA SERIES TRISILTM FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWN VOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT = 150 mA min REPETITIVE PEAK PULSE CURRENT : IPP = 50 A, 10/1000 µs. SMB JEDEC DO-214AA DESCRIPTION The SMTPAxx series has been designedto protect


    Original     		PDF DO-214AA) VDE0433 smb marking U01 SMTPA100 SMTPA120 SMTPA130 SMTPA180 SMTPA200 SMTPA220 SMTPA62 SMTPA68 VDE0433

    CB429

    Abstract: TPB100 TPB120 TPB130 TPB62 TPB68 VDE0433 VDE0878 TRISIL
    Text: TPB SERIES  TRISILTM FEATURES BIDIRECTIONAL CROWBAR PROTECTION. VOLTAGE RANGE: FROM 62 V TO 270 V. HOLDING CURRENT : IH = 150mA min. REPETITIVE PEAK PULSE CURRENT : IPP = 100 A, 10/1000 µs. UL RECOGNIZED FILE # E136224 DESCRIPTION CB429 The TPB series are TRISIL devices especially designed for protecting sensitive telecommunication


    Original     		PDF 150mA E136224 CB429 CB429 TPB100 TPB120 TPB130 TPB62 TPB68 VDE0433 VDE0878 TRISIL

    MOROCCO B 108 B

    Abstract: No abstract text available
    Text: r=7 SGS-1H0MS0N SD1460 * 7# . M »ilL§O T M []@ § RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS « . . . . • 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION P o u t = 150 W MIN. WITH 9.2 GAIN dB PIN CONNECTION a 1 (of jO 4 DESCRIPTION


    OCR Scan     		PDF SD1460 SD1143 MOROCCO B 108 B

    Untitled

    Abstract: No abstract text available
    Text: r Z J SGS-THOMSON *7W » TSH151 RfflO g[S ilL[i©TO M©i WIDE BANDWIDTH AND MOS INPUTS SINGLE OPERATIONAL AMPLIFIER LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SLEW RATE : 200V4is VERY FAST SETTLING TIME : 70ns (0.1% VERY HIGH INPUT IMPEDANCE


    OCR Scan     		PDF TSH151 150MHz 200V4is TheTSH151 TSH151 00bE4E5

    Untitled

    Abstract: No abstract text available
    Text: rZ Z S C S -T H O M S O N Ä 7 # M e a B nauge iiB M iiic s S T T B 1 2 0 0 6 T V 1 /2 TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 2*60A V rrm 600V trr (typ) 65ns V f (max) PRELIMINARY DATA K1 A1 STTB12006TV1


    OCR Scan     		PDF STTB12006TV1 STTB12006TV2 G73b53

    Untitled

    Abstract: No abstract text available
    Text: TSH150 WIDE BANDWIDTH AND BIPOLAR INPUTS SINGLE OPERATIONAL AMPLIFIER . LOW DISTORTION . GAIN BANDWIDTH PRODUCT : 150MHz . UNITY GAIN STABLE . SLEW RATE : 190V/|is . VERY FAST SETTLING TIME :20ns 0.1% N DIP8 D S08 (Plastic Package) (Plastic Micropackage)


    OCR Scan     		PDF TSH150 150MHz TSH150 MILSTD883CClass2.

    Untitled

    Abstract: No abstract text available
    Text: * 7£ SGS-THOMSON KÜD g[B g[Li(gïïœia©i T S H 15 0 WIDE BANDWIDTH AND BIPOLAR INPUTS SINGLE OPERATIONAL AMPLIFIER LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SLEW RATE : 190V^is VERY FAST SETTLING TIME : 20ns (0.1% DESCRIPTION:


    OCR Scan     		PDF 150MHz TSH150 MILSTD883CClass2. 007L52Ã

    50-150B

    Abstract: No abstract text available
    Text: S G S - Ï H O M S O N m œ m ie r a M o s s B Z W 5 0 - 10 , B/18 0 , B TRANSIL FEATURES • PEAK PULSE POWER : 5000 W 10/1 OOO^s ■ STAND-OFF VOLTAGE RANGE: From 10V to 180 V ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR ■ FAST RESPONSE TIME


    OCR Scan     		PDF