MODEL VALUES FOR 0.18 MICRON TECHNOLOGY CMOS Search Results

MODEL VALUES FOR 0.18 MICRON TECHNOLOGY CMOS Result Highlights (5)

Part	Manufacturer	Description
74HC4053FT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
74HC4051FT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
GRT155C81A475ME13D	Murata Manufacturing Co Ltd	AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment
GC321AD7LP103KX18J	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC331AD7LQ153KX18J	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive

MODEL VALUES FOR 0.18 MICRON TECHNOLOGY CMOS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
rpp1k1 Abstract: No abstract text available Text: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate	Original	PDF	XT018 XT018 18-micron rpp1k1
CMOS Process Family Abstract: XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor XP018 process flow diagram "X-Fab" Core cell library Text: 0.18 µm CMOS Process Family XP018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron CMOS Power Management Process Technology Description The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS Power Management Technology. Based upon the industrial standard single	Original	PDF	XP018 XP018 18-micron CMOS Process Family XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor process flow diagram "X-Fab" Core cell library
XH018 Abstract: sonos MOS RM3 model values for 0.18 micron technology cmos 0.18 um CMOS parameters analog devices transistor tutorials CMOS spice model bsim3 0.18 micron parameters EPI EEPROM bsim3 circuit model Text: 0.18 µm CMOS Process Family XH018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular Mixed Signal HV CMOS Technology Description The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six	Original	PDF	XH018 XH018 18-micron sonos MOS RM3 model values for 0.18 micron technology cmos 0.18 um CMOS parameters analog devices transistor tutorials CMOS spice model bsim3 0.18 micron parameters EPI EEPROM bsim3 circuit model
bsim3 0.18 micron parameters Abstract: bsim3 model for 0.18 micron technology for hspice 0.18 um CMOS parameters bsim3 model model values for 0.18 micron technology cmos XH018 CMOS Process Family model values for 0.25 micron technology cmos aadcc01_3v3 0.18-um CMOS technology length and width Text: 0.18 µm CMOS Process Family XH018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular Mixed Signal HV CMOS Technology Description The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six	Original	PDF	XH018 XH018 18-micron bsim3 0.18 micron parameters bsim3 model for 0.18 micron technology for hspice 0.18 um CMOS parameters bsim3 model model values for 0.18 micron technology cmos CMOS Process Family model values for 0.25 micron technology cmos aadcc01_3v3 0.18-um CMOS technology length and width
XH018 Abstract: No abstract text available Text: 0.18 m Process Family: XH018 0.18 Micron Modular Analog Mixed HV Technology DESCRIPTION The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron	Original	PDF	XH018 XH018 18-micron
CMOS Abstract: pmos4 Text: 0.8 µm CMOS Process CX08 MIXED-SIGNAL FOUNDRY EXPERTS 0.8 Micron Modular Mixed Signal Technology Description The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom designs for Industrial, Telecommunication and Automotive products - including the 42V board net.	Original	PDF
XP018 Abstract: No abstract text available Text: 0.18 m Process Family: XP018 0.18 Micron CMOS Analog Mixed-Signal Process Technology DESCRIPTION The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS High Performance Analog Mixed-Signal Technology. Based upon the industrial standard single	Original	PDF	XP018 XP018 18-micron
MC14053 Abstract: MC14053 application 948F HC4053 MAX4053 MAX4053A MC74HC4053 NLAS4053 Text: NLAS4053 Analog Multiplexer/ Demultiplexer Triple 2:1 Analog Switch−Multiplexer Improved Process, Sub−Micron Silicon Gate CMOS MARKING DIAGRAMS The NLAS4053 is an improved version of the MC14053 and MC74HC4053 fabricated in sub−micron Silicon Gate CMOS	Original	PDF	NLAS4053 NLAS4053 MC14053 MC74HC4053 SOIC-16 MC14053 application 948F HC4053 MAX4053 MAX4053A
hv2300 Abstract: AXTO bsim3 model for 0.18 micron technology for hspice adc04 x-fabs 0.8um nmos bsim3 model parameters bsim3 model analog devices transistor tutorials analogue digital converter instrumentation delta application instrumentation projects Text: 0.8 m CMOS Process CX08 MIXED-SIGNAL FOUNDRY EXPERTS 0.8 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom	Original	PDF
BA014 Abstract: No abstract text available Text: ADVANCE 8, 16 MEG x 72 DDR REGISTERED SDRAM DIMMs DDR SDRAM DIMM MODULE MT9VDDT872, MT18VDDT1672D For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • • • • • • • • • • •	Original	PDF	MT9VDDT872, MT18VDDT1672D 184-pin 128MB dou93 BA014
Untitled Abstract: No abstract text available Text: ADVANCE 8, 16 MEG x 72 DDR REGISTERED SDRAM DIMMs DDR SDRAM DIMM MODULE MT9VDDT872, MT18VDDT1672D For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • • • • • • • • • • •	Original	PDF	184-pin 128MB
1E76 Abstract: No abstract text available Text: ADVANCE 16, 32 MEG x 72 DDR REGISTERED SDRAM DIMMs MT18VDDT1672G, MT18VDDT3272G DDR SDRAM DIMM MODULE For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT • 184-pin, dual in-line memory modules DIMM	Original	PDF	184-pin, 128MB 256MB 1E76
nmos transistor 0.35 um Abstract: npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials Text: 0.6 µm BiCMOS Process Family XHB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular HV BCD Technology Description The XHB06 is X-FAB's 0.6 Micron High-Voltage Bipolar CMOS DMOS BCD Technology, optimized for applications requiring operating voltages of 5V to 30V. Main target applications are power	Original	PDF	XHB06 XHB06 nmos transistor 0.35 um npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials
CMOS Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion Text: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.	Original	PDF

A114 Abstract: A115 NL17SV16XV5T2 Text: NL17SV16XV5T2 Ultra−Low Voltage Buffer The NL17SV16XV5T2 is an ultra−high performance single Buffer fabricated in sub−micron silicon gate 0.35 m CMOS technology with excellent performance down to 0.9 V. This device is ideal for extremely high−speed and high−drive applications. Additionally, limitations of	Original	PDF	NL17SV16XV5T2 NL17SV16XV5T2 OT-553 NL17SV16XV5T2/D A114 A115
A114 Abstract: A115 NL17SV16XV5T2 Text: NL17SV16XV5T2 Ultra−Low Voltage Buffer The NL17SV16XV5T2 is an ultra−high performance single Buffer fabricated in sub−micron silicon gate 0.35 m CMOS technology with excellent performance down to 0.9 V. This device is ideal for extremely high−speed and high−drive applications. Additionally, limitations of	Original	PDF	NL17SV16XV5T2 NL17SV16XV5T2 OT-553 NL17SV16XV5T2/D A114 A115
Untitled Abstract: No abstract text available Text: ADVANCE 16, 32 MEG x 72 DDR REGISTERED SDRAM DIMMs MT18VDDT1672G, MT18VDDT3272G DDR SDRAM DIMM MODULE For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT • 184-pin, dual in-line memory modules DIMM	Original	PDF	184-pin, 128MB 256MB -750A1 -745A1 -850A1 -845A1 -840A1
COOLRUNNER-II examples Abstract: XAPP393 DS090 xc2c64a vqg44 qfg48 circuit diagram of half adder cpld cool runner II COOLRUNNER-II test circuit XC2C32A VQ44 VQ100 XC2C128 Text: R CoolRunner-II CPLD Family DS090 v2.5 June 28, 2005 Product Specification Features • • • - Optimized for 1.8V systems - Industry’s fastest low power CPLD - Densities from 32 to 512 macrocells Industry’s best 0.18 micron CMOS CPLD - Optimized architecture for effective logic synthesis	Original	PDF	DS090 IEEE1149 XC2C32A XC2C64A XC2C128. COOLRUNNER-II examples XAPP393 DS090 xc2c64a vqg44 qfg48 circuit diagram of half adder cpld cool runner II COOLRUNNER-II test circuit XC2C32A VQ44 VQ100 XC2C128
CTC 313 transistor Abstract: CTC 313 transistor pin diagram CPLD XC2C64 from Xilinx CoolRunner-II family XC2C64 Series CTC 313 transistor ctc 313 CoolRunner-II CPLD COOLRUNNER-II test circuit COOLRUNNER-II examples XAPP393 Text: R CoolRunner-II CPLD Family DS090 v2.1 July 30, 2004 Preliminary Product Specification Features • • • • Optimized for 1.8V systems - Industry’s fastest low power CPLD - Densities from 32 to 512 macrocells Industry’s best 0.18 micron CMOS CPLD	Original	PDF	DS090 IEEE1149 XC2C32A XC2C64A CTC 313 transistor CTC 313 transistor pin diagram CPLD XC2C64 from Xilinx CoolRunner-II family XC2C64 Series CTC 313 transistor ctc 313 CoolRunner-II CPLD COOLRUNNER-II test circuit COOLRUNNER-II examples XAPP393
intel mpga478b MOTHERBOARD SERVICE MANUAL Abstract: intel mpga478b MOTHERBOARD installation MANUAL manual mpga478b motherboard mpga478b motherboard manual intel mpga478b MOTHERBOARD MANUAL intel 845 MOTHERBOARD SERVICE MANUAL intel 845 mpga478b motherboard 845 MOTHERBOARD CIRCUIT diagram mpga478b motherboard diagram 845 MOTHERBOARD CIRCUIT MANUAL Text: Intel Pentium® 4 Processor with 512-KB L2 Cache on 0.13 Micron Process and Intel® Pentium® 4 Processor Extreme Edition Supporting Hyper-Threading Technology1 Datasheet 2 GHz – 3.40 GHz Frequencies Supporting Hyper-Threading Technology1 at 3.06 GHz with 533 MHz System Bus and All	Original	PDF	512-KB BX80528JK200G BX80528JK190G BX80528JK180G 256MB BX80528JK170GR2 BK80528JK170GR2 128MB BX80528JK170GR BX80528JK170G intel mpga478b MOTHERBOARD SERVICE MANUAL intel mpga478b MOTHERBOARD installation MANUAL manual mpga478b motherboard mpga478b motherboard manual intel mpga478b MOTHERBOARD MANUAL intel 845 MOTHERBOARD SERVICE MANUAL intel 845 mpga478b motherboard 845 MOTHERBOARD CIRCUIT diagram mpga478b motherboard diagram 845 MOTHERBOARD CIRCUIT MANUAL
948F Abstract: HC4053 MAX4053 MAX4053A MC14053 MC74HC4053 NLAS4053 NLAST4053 NLAST4053D Text: NLAST4053 Analog Multiplexer/ Demultiplexer TTL Compatible, Triple 2:1 Analog Switch–Multiplexer Improved Process, Sub–Micron Silicon Gate CMOS The NLAST4053 is an improved version of the MC14053 and MC74HC4053 fabricated in sub–micron Silicon Gate CMOS	Original	PDF	NLAST4053 NLAST4053 MC14053 MC74HC4053 r14525 NLAST4053/D 948F HC4053 MAX4053 MAX4053A NLAS4053 NLAST4053D
DIGITAL GATE EMULATOR USING 8085 Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent Text: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S	OCR Scan	PDF	AMI6G16S AMI6G33S AMI6G41S AMI6G70S AMI6G106S AMI6G150S AMI6G202S AMI6G333 AMI6G471 AMI6G603 DIGITAL GATE EMULATOR USING 8085 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent
bb 9790 schematic diagram Abstract: DIGITAL GATE EMULATOR USING 8085 TDA 1006 equivalents ami equivalent gates verilog code motor 04S75 M6845 TDB 2915 KM AMI8G34S AMI8G28S Text: Libraiy Characteristics AMERICAN MICROSYSTEMS INC. AMI8G 0.8 micron CMOS Gale Array AMI’s “AMI8Gx” series of 0.8\|im gate arrays exploits a proprietary power grid and track routing architecture on a compact, channelless, sea-of-gates design to provide one	OCR Scan	PDF	32-bits. MG65C02, MG29C01, MG29C10, MG80C85, MG82Cxx, MGMC51 Q172SÖ AMI86 DD17SbD bb 9790 schematic diagram DIGITAL GATE EMULATOR USING 8085 TDA 1006 equivalents ami equivalent gates verilog code motor 04S75 M6845 TDB 2915 KM AMI8G34S AMI8G28S
Untitled Abstract: No abstract text available Text: S* d Ä T E L ADC-207 7-Bit, 20MHz, CMOS Flash A/D Converters IN N O V A T IO N a n d E X C E L L E N C E FEATURES • • • • • • • • • 7-bit flash A/D converter 20MHz sampling rate Low power 250mW Single +5V supply 1.2 micron CMOS technology	OCR Scan	PDF	ADC-207 20MHz, 20MHz 250mW) ADC-207 VLS11 -207M -55t0 18-pin

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MODEL VALUES FOR 0.18 MICRON TECHNOLOGY CMOS Search Results

MODEL VALUES FOR 0.18 MICRON TECHNOLOGY CMOS Result Highlights (5)

MODEL VALUES FOR 0.18 MICRON TECHNOLOGY CMOS Datasheets Context Search

rpp1k1

CMOS Process Family

XH018

bsim3 0.18 micron parameters

XH018

CMOS

XP018

MC14053

hv2300

BA014

Untitled

1E76

nmos transistor 0.35 um

CMOS

A114

A114

Untitled

COOLRUNNER-II examples

CTC 313 transistor

intel mpga478b MOTHERBOARD SERVICE MANUAL

948F

DIGITAL GATE EMULATOR USING 8085

bb 9790 schematic diagram

Untitled