MODEL TRANSISTOR 910 Search Results
MODEL TRANSISTOR 910 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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TPCP8515 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
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TTC021 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini |
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MODEL TRANSISTOR 910 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SUD45P03-15Contextual Info: SPICE Device Model SUD45P03-15 Vishay Siliconix P-Channel Enhancement-Mode Transistor CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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SUD45P03-15 18-Jul-08 SUD45P03-15 | |
SUD45P03-10Contextual Info: SPICE Device Model SUD45P03-10 Vishay Siliconix P-Channel Enhancement-Mode Transistor CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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SUD45P03-10 18-Jul-08 SUD45P03-10 | |
SUD30N03-30Contextual Info: SPICE Device Model SUD30N03-30 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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SUD30N03-30 18-Jul-08 SUD30N03-30 | |
Contextual Info: SPICE Device Model SUP/SUB75P03-08 Vishay Siliconix P-Channel Enhancement-Mode Transistor CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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SUP/SUB75P03-08 18-Jul-08 | |
SUD45N05-20LContextual Info: SPICE Device Model SUD45N05-20L Vishay Siliconix N-Channel Enhancement-Mode Transistor, Logic Level CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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SUD45N05-20L 18-Jul-08 SUD45N05-20L | |
TR1111Contextual Info: SPICE Device Model SUP/SUB60N06-18 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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SUP/SUB60N06-18 18-Jul-08 TR1111 | |
Contextual Info: SPICE Device Model SUP/SUB75N06-12L Vishay Siliconix N-Channel Enhancement-Mode Transistor, Logic Level CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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SUP/SUB75N06-12L 18-Jul-08 | |
code c3 sot-23Contextual Info: MMBT4126LT1 Preferred Device General Purpose Transistor PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V ESD Rating − Machine Model: >400 V http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage |
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MMBT4126LT1 code c3 sot-23 | |
1417 transistor
Abstract: transistor 1417 vishay RESISTOR NETWORK
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18-Jul-08 1417 transistor transistor 1417 vishay RESISTOR NETWORK | |
Contextual Info: 1417 Vishay Foil Resistors Bulk Metal Foil Technology 8 Pin Transistor Outline Hermetic Resistor Network The eight pin TO-5 package with 0.230" pin circle is an alternative layout to Model 1413. This network can contain up to 12, V5X5 resistor chips. Review data sheet “7 Technical Reasons to Specify Bulk Metal® |
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08-Apr-05 | |
ssm2210
Abstract: MS-012AA SSM2210P SSM2210S SSM2210S-REEL
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SSM2210 SSM2210P SSM2210S SSM2210S-REEL MS-012AA 11/03--Data ssm2210 MS-012AA SSM2210P SSM2210S SSM2210S-REEL | |
SSM2220
Abstract: SSM2220P transistor 355 equivalent MS-012AA SSM2220S SSM2220S-REEL
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SSM2220 SSM2220P SSM2220S SSM2220S-REEL MO-095AA 11/03--Data C03096 SSM2220 SSM2220P transistor 355 equivalent MS-012AA SSM2220S SSM2220S-REEL | |
SSM2210P
Abstract: SSM2210 MS-012AA Package MS-012AA SSM2210S SSM2210S-REEL analog devices 902
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SSM2210 SSM2210P SSM2210S SSM2210S-REEL MS-012AA 11/03--Data SSM2210P SSM2210 MS-012AA Package MS-012AA SSM2210S SSM2210S-REEL analog devices 902 | |
Contextual Info: Audio Dual Matched NPN Transistor SSM2210 ORDERING GUIDE Package Package Description Option SSM2210P –40ºC to +85ºC PDIP P-8 SSM2210S –40ºC to +85ºC SOIC S-8 SOIC S-8 Ob s ol SSM2210S-REEL –40ºC to +85ºC e Temperature Range et Model REV. C Information furnished by Analog Devices is believed to be accurate and |
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SSM2210 SSM2210S SSM2210S-REEL SSM2210P MS-012AA | |
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Operational Transconductance Amplifier pspice
Abstract: transisTOR C124 c124 transistor transistor directory cdt660 OPA660 transistor c206 transistor c202 COPA660 DEM-OPA660-3GC
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CG22DF2) Operational Transconductance Amplifier pspice transisTOR C124 c124 transistor transistor directory cdt660 OPA660 transistor c206 transistor c202 COPA660 DEM-OPA660-3GC | |
transisTOR C124
Abstract: Operational Transconductance Amplifier pspice c124 transistor cdt660 OPA660 transistor directory TR BC 548 TI 121 Transistor opa660 pspice transistor c202
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VPO300
Abstract: OPA177 substitution dividing network basic diagram jfet discrete differential transistor JFET NPN AMPLIFIER AB-193 INA110 OPA177 broad rf power transistor texas OPA603
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VPO300
Abstract: OPA177 substitution AB-193 INA110 OPA177 OPA2111 OPA603 OPA621 REF200 NPN transistor which has frequency greater than 2
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OPA177 OPA621 1000pF INA110 OPA2111 REF200 VPO300 VPO300 OPA177 substitution AB-193 INA110 OPA177 OPA2111 OPA603 OPA621 REF200 NPN transistor which has frequency greater than 2 | |
mercedes
Abstract: AN-715 hyperlynx CMOS spice model
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AN-715 mercedes AN-715 hyperlynx CMOS spice model | |
BUF600X1
Abstract: ISO120X BUF634X MPC104X1 ISO130X ACF2101M MPC100X1 opa129 pspice model OPT101 equivalent OPA2541
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BUF600X1
Abstract: ISO130X ISO120X ACF2101M VoltageControlled Voltage Source INA106 equivalent INA114E BUF634X INA101E TRANSISTOR BC 141
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A115E INA117E INA118E INA120E INA131E UAF42E OPA404E OPA445E OPA501E OPA502E BUF600X1 ISO130X ISO120X ACF2101M VoltageControlled Voltage Source INA106 equivalent INA114E BUF634X INA101E TRANSISTOR BC 141 | |
HP5082-2835
Abstract: The Transistor Manual Japanese 1993 TRANSISTOR C-111 HP5082-2835 diode SCR PNP NPN emitter area electrostatic discharge transzorb i-v curve 3 Volt transzorb SCR Manual, General electric What is a TRANSZORB AD7893-10
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AN-397 HP5082-2835 The Transistor Manual Japanese 1993 TRANSISTOR C-111 HP5082-2835 diode SCR PNP NPN emitter area electrostatic discharge transzorb i-v curve 3 Volt transzorb SCR Manual, General electric What is a TRANSZORB AD7893-10 | |
ADP2108
Abstract: ADP2108AUJZ-3.3-R7 adp2108aujz
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UG-039 ADP2108 ADP2108UJZ-REDYKIT ADP2108-1 ADP2108-3 UG08410-0-12/09 ADP2108AUJZ-3.3-R7 adp2108aujz | |
bc577
Abstract: AGC OPA660 2N5460 simulation model ca3080 agc 2N5460 ca3080 1N4148 2N3904 AB-185 OPA621
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OPA660 bc577 AGC OPA660 2N5460 simulation model ca3080 agc 2N5460 ca3080 1N4148 2N3904 AB-185 OPA621 |