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    "IGBT h-bridge"

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR MOD1004 TECHNICAL DATA DATA SHEET 1125, REV. 12 1 2 3 4 5 11 10 9 8 7 6 600 VOLT, 40 AMP IGBT H-BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE PARAMETER Tj=250C UNLESS OTHERWISE SPECIFIED SYMBOL MIN TYP MAX UNIT 600 - - V - - 40


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    PDF MOD1004 /-20V "IGBT h-bridge"

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    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR MOD1004 TECHNICAL DATA DATA SHEET 1125, REV. 12 1 2 3 4 5 11 10 9 8 7 6 600 VOLT, 40 AMP IGBT H-BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE PARAMETER Tj=250C UNLESS OTHERWISE SPECIFIED SYMBOL MIN TYP MAX UNIT 600 - - V - - 40


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    PDF MOD1004 /-20V

    igbt catalog

    Abstract: MOD1019
    Text: SENSITRON SEMICONDUCTOR 2000 CATALOG MODXX-XX SENSITRON SEMICONDUCTOR STANDARD HERMETIC IGBT MODULES FEATURES: • High Power Density • Low Saturation Voltage V C e (s a t • Low Thermal Resistance (Reuc) INDUSTRIAL IGBT PRODUCT MAP lc (Amps) CONFIG-URATION


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    PDF MOD1011 MOD1018 MOD1001 MOD1008 MOD1014 MOD1022 MOD1006 MOD1016 MOD1002 MOD1004 igbt catalog MOD1019

    tc 3086

    Abstract: d1018 d100-5 D1016
    Text: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision HERMETIC IGBT MODULES H Y P E R F A S T IG B T D E V IC E S W IT H A F A S T R E V E R S E R E C O V E R Y D IO D E IG B T C H A R A C T E R IS T IC S Continuous Collector Current Continuous Collector


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    PDF MOD1001 MOD1003 MOD1004 D1005 35U-- tc 3086 d1018 d100-5 D1016