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    MOBILE LPDDR2 SDRAM, 2010 Search Results

    MOBILE LPDDR2 SDRAM, 2010 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CO-213UHFMX20-100 Amphenol Cables on Demand Amphenol CO-213UHFMX20-100 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 100 ft Datasheet
    CO-213NTYPEX2-010 Amphenol Cables on Demand Amphenol CO-213NTYPEX2-010 Type N Male to Type N Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 10ft Datasheet
    CO-058RASMAX2-010 Amphenol Cables on Demand Amphenol CO-058RASMAX2-010 SMA Right Angle Male to SMA Right Angle Male (RG58) 50 Ohm Coaxial Cable Assembly 10ft Datasheet
    DO2010-152MLC Coilcraft Inc General Purpose Inductor, 1.5uH, 20%, 1 Element, Ferrite-Core, SMD, 0808, ROHS COMPLIANT Visit Coilcraft Inc
    DO2010-224MLC Coilcraft Inc General Purpose Inductor, 220uH, 20%, 1 Element, Ferrite-Core, SMD, 0808, ROHS COMPLIANT Visit Coilcraft Inc

    MOBILE LPDDR2 SDRAM, 2010 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    216-ball

    Abstract: Dual LPDDR2 LPDDR2 SDRAM micron LPDDR2 1Gb Memory MT42L128M64D4 MR63 Micron LPDDR2 lpddr2 168 lp-ddr2 MT42L256M32
    Text: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die


    Original     		PDF MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 09005aef83f3f2eb 216-ball Dual LPDDR2 LPDDR2 SDRAM micron LPDDR2 1Gb Memory MR63 Micron LPDDR2 lpddr2 168 lp-ddr2 MT42L256M32

    Untitled

    Abstract: No abstract text available
    Text: 512Mb: x16 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package – 121-ball FBGA 6.5mm x 8mm


    Original     		PDF 512Mb: MT42L32M16D1 09005aef8467caf2

    mt42l128M32

    Abstract: mt42l256m32 MT42L64M32D1 LPDDR2-1066 MT42L256M32D4 MT42L128M32D MT42L128M16D1 MT42L128M64D4 MT42L256M32D MT42L128M32D2
    Text: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die


    Original     		PDF MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 09005aef83f3f2eb mt42l128M32 mt42l256m32 MT42L64M32D1 LPDDR2-1066 MT42L256M32D4 MT42L128M32D MT42L128M16D1 MT42L256M32D MT42L128M32D2

    MT42L64M64D2

    Abstract: mt42l128M32 LPDDR2-1066 64M32 MT42L128M64D4 MT42L MT42L256M32D4 MT42L64M32D1 LPDDR2 SDRAM micron micron lpddr2
    Text: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die


    Original     		PDF MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 09005aef83f3f2eb MT42L64M64D2 mt42l128M32 LPDDR2-1066 64M32 MT42L MT42L256M32D4 MT42L64M32D1 LPDDR2 SDRAM micron micron lpddr2

    lpddr2 DQ calibration

    Abstract: micron lpddr2 lpddr2-s4 ADQ28 MT42L128M16D1 LPDDR2 SDRAM micron MT42L64M32D1 MT42L128M32D2 mt42l256m32 LPDDR2 1Gb Memory
    Text: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die


    Original     		PDF MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 09005aef83f3f2eb lpddr2 DQ calibration micron lpddr2 lpddr2-s4 ADQ28 MT42L128M16D1 LPDDR2 SDRAM micron MT42L64M32D1 MT42L128M32D2 mt42l256m32 LPDDR2 1Gb Memory

    MT42L16M32

    Abstract: MT42L16M32D1 MT42L16M32D MT42L32M16D1 MT42L32M16D PS 229 LPDDR2 PoP LPDDR2 DRAM LPDDR2-1066 Micron LPDDR2
    Text: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package


    Original     		PDF 512Mb: MT42L32M16D1, MT42L16M32D1 09005aef8467caf2 MT42L16M32 MT42L16M32D MT42L32M16D1 MT42L32M16D PS 229 LPDDR2 PoP LPDDR2 DRAM LPDDR2-1066 Micron LPDDR2

    MT42L16M32D1

    Abstract: 7600B Dynamic Memory Refresh Controller LPDDR2-1066 121ball
    Text: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package


    Original     		PDF 512Mb: MT42L32M16D1, MT42L16M32D1 09005aef8467caf2 7600B Dynamic Memory Refresh Controller LPDDR2-1066 121ball

    LPDDR2-1066

    Abstract: micron lpddr2 lpddr2 DQ calibration LPDDR2 SDRAM micron MT42L128M64D4 lpddr2 MT42L64M64D2 micron LPDDR2 X32 LPDDR2 SDRAM mt42L128M64D
    Text: 2Gb: x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L64M64D2, MT42L128M64D4, MT42L96M64D3 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 32 x 8 banks x 2 die – 8 Meg x 32 x 8 banks x 3 die – 8 Meg x 32 x 8 banks x 4 die


    Original     		PDF MT42L64M64D2, MT42L128M64D4, MT42L96M64D3 240-ball 09005aef84645b7c LPDDR2-1066 micron lpddr2 lpddr2 DQ calibration LPDDR2 SDRAM micron MT42L128M64D4 lpddr2 MT42L64M64D2 micron LPDDR2 X32 LPDDR2 SDRAM mt42L128M64D

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0

    NT6SM16M16AG-S1

    Abstract: lpddr2-s2 NT6SM16M16AG NT6SM16M16AG-S1I 128T64
    Text: 256Mb LPSDR SDRAM NT6SM16M16AG NT6SM8M32AK Feature Options Fully synchronous; all signals registered on positive edge of z z Marking VDD /VDDQ system clock -1.8V/1.8V M Internal, pipelined operation; column address can be changed z z every clock cycle


    Original     		PDF 256Mb NT6SM16M16AG NT6SM8M32AK -16Meg -54-ball -90-ball x13mm) 16M16 NT6SM16M16AG-S1 lpddr2-s2 NT6SM16M16AG-S1I 128T64

    A1930

    Abstract: No abstract text available
    Text: 256Mb LPSDR SDRAM NT6SM8M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle


    Original     		PDF 256Mb NT6SM8M32AK -16Meg 16M16 A1930

    Lpddr2 Idd7

    Abstract: Jedec lpddr2 216-ball LPDDR 8Gb lpddr2-s2
    Text: 256Mb LPSDR SDRAM NT6SM8M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle


    Original     		PDF 256Mb NT6SM8M32AK -16Meg -54-ball -90-ball x13mm) 16M16 Lpddr2 Idd7 Jedec lpddr2 216-ball LPDDR 8Gb lpddr2-s2

    NTC 200-9

    Abstract: a2240 128M16 A1930 NT6SM16M32
    Text: 512Mb LPSDR SDRAM NT6SM16M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle


    Original     		PDF 512Mb NT6SM16M32AK -16Meg 16M32 NTC 200-9 a2240 128M16 A1930 NT6SM16M32

    Lpddr2 Idd7

    Abstract: 216-ball LPDDR2 NT6SM16M32 NT6SM16M32AK-S1
    Text: 512Mb LPSDR SDRAM NT6SM16M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle


    Original     		PDF 512Mb NT6SM16M32AK -16Meg -90-ball x13mm) 16M32 Lpddr2 Idd7 216-ball LPDDR2 NT6SM16M32 NT6SM16M32AK-S1

    Lpddr2 Idd7

    Abstract: COMMAND42 lpddr2 256mb lpddr2 layout NT6SM32M16AG-S2 LPDDR2 1Gb Memory NT6SM16M32
    Text: 512Mb LPSDR SDRAM NT6SM32M16AG / NT6SM16M32AK / NT6SM16M32RAK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed


    Original     		PDF 512Mb NT6SM32M16AG NT6SM16M32AK NT6SM16M32RAK -32Meg -16Meg -54-ball -90-ball x13mm) 32M16 Lpddr2 Idd7 COMMAND42 lpddr2 256mb lpddr2 layout NT6SM32M16AG-S2 LPDDR2 1Gb Memory NT6SM16M32

    NT6DM16M16AD-T1

    Abstract: 64M32 HP 3458 NT6DM16M16AD-T1I
    Text: 256Mb LPDDR SDRAM NT6DM16M16AD / NT6DM8M32AC Options Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with data, to be used in capturing data at the receiver Marking  VDD /VDDQ


    Original     		PDF 256Mb NT6DM16M16AD NT6DM8M32AC -16Meg 16M16 NT6DM16M16AD-T1 64M32 HP 3458 NT6DM16M16AD-T1I

    NT6DM32M16AD-T1

    Abstract: NT6DM32M16AD NT6DM16M32AC-T1 NT6DM16M32AC NT6DM16M32AC-T3 216-ball NT6DM32M16AD-T3 256M16 lpddr2 256mb lpddr2 layout
    Text: 512Mb LPDDR SDRAM NT6DM32M16AD / NT6DM16M32AC Feature Options  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with Marking  VDD /VDDQ -1.8V/1.8V M data, to be used in capturing data at the receiver


    Original     		PDF 512Mb NT6DM32M16AD NT6DM16M32AC -32Meg -16Meg -60-ball -90-ball NT6DM32M16AD-T1 NT6DM16M32AC-T1 NT6DM16M32AC NT6DM16M32AC-T3 216-ball NT6DM32M16AD-T3 256M16 lpddr2 256mb lpddr2 layout

    LPDDR 8Gb

    Abstract: lpddr2 256mb NT6DM32M16AD-T1 NT6DM32M16AD nanya lpddr2 spec
    Text: 512Mb LPDDR SDRAM NT6DM32M16AD / NT6DM16M32AC Feature Options  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with Marking  VDD /VDDQ -1.8V/1.8V M data, to be used in capturing data at the receiver


    Original     		PDF 512Mb NT6DM32M16AD NT6DM16M32AC -32Meg -16Meg -60-ball -90-ball LPDDR 8Gb lpddr2 256mb NT6DM32M16AD-T1 nanya lpddr2 spec

    Untitled

    Abstract: No abstract text available
    Text: 256Mb LPDDR SDRAM NT6DM16M16AD / NT6DM8M32AC Options Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with data, to be used in capturing data at the receiver  Differential clock inputs (CK and /CK)


    Original     		PDF 256Mb NT6DM16M16AD NT6DM8M32AC -16Meg 16M16

    NT6DM16M

    Abstract: No abstract text available
    Text: 512Mb LPDDR SDRAM NT6DM32M16AD / NT6DM16M32AC Feature Options  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with Marking  VDD /VDDQ -1.8V/1.8V M data, to be used in capturing data at the receiver


    Original     		PDF 512Mb NT6DM32M16AD NT6DM16M32AC -32Meg 32M16 -16Meg 16M32 NT6DM16M

    lpddr2 256mb

    Abstract: NT6DM8M32AC-T1 NT6DM16M16AD NT6DM8M32AC lpddr2 layout NT6DM8M32 Dual LPDDR2 lpddr2 256mb kgd lpddr2-s2
    Text: 256Mb LPDDR SDRAM NT6DM16M16AD / NT6DM8M32AC Options Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with data, to be used in capturing data at the receiver Marking  VDD /VDDQ


    Original     		PDF 256Mb NT6DM16M16AD NT6DM8M32AC -16Meg 16M16 lpddr2 256mb NT6DM8M32AC-T1 NT6DM8M32AC lpddr2 layout NT6DM8M32 Dual LPDDR2 lpddr2 256mb kgd lpddr2-s2

    OMAP4430

    Abstract: ELPIDA mobile dram LPDDR2 OMAP4 LPDDR2 SDRAM memory Texas Instruments Pandaboard Elpida LPDDR2 Memory lpddr2 pcb design EDB8064B1PB-8D-F Micron LPDDR2 lpddr2* schematic
    Text: OMAPTM 4 PandaBoard System Reference Manual Revision 0.6 November 29, 2010 DOC-21010 OMAPTM 4 PandaBoard System Reference Manual IMPORTANT NOTICE THIS DOCUMENT This work is licensed under the Creative Commons Attribution-Share Alike 3.0 Unported License. To


    Original     		PDF DOC-21010 595-PANDABOARD UEVM4430G-01-00-00 OMAP4430 ELPIDA mobile dram LPDDR2 OMAP4 LPDDR2 SDRAM memory Texas Instruments Pandaboard Elpida LPDDR2 Memory lpddr2 pcb design EDB8064B1PB-8D-F Micron LPDDR2 lpddr2* schematic

    All Type Of IC Pin Diagram Manual

    Abstract: No abstract text available
    Text: OMAPTM 4 PandaBoard System Reference Manual Revision 0.6 November 29, 2010 DOC-21010 OMAPTM 4 PandaBoard System Reference Manual IMPORTANT NOTICE THIS DOCUMENT This work is licensed under the Creative Commons Attribution-Share Alike 3.0 Unported License. To


    Original     		PDF DOC-21010 All Type Of IC Pin Diagram Manual

    winband

    Abstract: W25X40BV W25Q408W w25x40v W651GG2JB WSON* 8x6mm w25q128 W25X16AV 208-MIL w25X20BV
    Text: t/vinband We D eliver Product Selection Guide - o 2010 Mobile RAM Specialty DRAM Graphics DRAM Flash Memory Memory Product Foundry Service Product Selection Guide 2010 Contents 2 Mobile RAM Pseudo SRAM Low Power SDR SDRAM Low Power DDR / DDR2 SDRAM


    OCR Scan     		PDF 300mm winband W25X40BV W25Q408W w25x40v W651GG2JB WSON* 8x6mm w25q128 W25X16AV 208-MIL w25X20BV