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    MOBILE CONTROL ROBOT Search Results

    MOBILE CONTROL ROBOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM6J808R Toshiba Electronic Devices & Storage Corporation MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K819R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 10 A, 0.0258 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K809R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K504NU Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 30 V, 9.0 A, 0.0195 Ohm@10V, UDFN6B, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    MOBILE CONTROL ROBOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TB9061FNG

    Abstract: TB6612 toshiba tb6560 TB9056FNG TB6584FNG TB9067FNG sop18 footprint TB6560AHQ TB9061 tb6560ahq application
    Text: 2009-3 SYSTEM CATALOG Motor Solutions Guide SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Toshiba’s Semiconductors for Motor Control Interface Driver Controller Many of the digital mobile handsets, small office equipment and toy robots are battery-powered,


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    PDF SCE0020B SCE0020C TB9061FNG TB6612 toshiba tb6560 TB9056FNG TB6584FNG TB9067FNG sop18 footprint TB6560AHQ TB9061 tb6560ahq application

    Mobile Controlled Robot

    Abstract: CSP-15 QFN-24 R2A20101BM
    Text: Renesas Technology Releases Synchronous Rectification DC-DC Converter Offering Fast Load Transient Response for Mobile Devices and Digital Consumer Products  New control method achieves 5 µs fast load transient response in output voltage control  Tokyo, October 31, 2005  Renesas Technology Corp. today announced the R2A20101 synchronous


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    PDF R2A20101 R2A20101NP QFN-24 R2A20101BM CSP-15 QFN-24, Mobile Controlled Robot CSP-15 QFN-24 R2A20101BM

    UPG2179TB-E4

    Abstract: marking g4c
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2179TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG2179TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 2.5


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    PDF PG2179TB PG2179TB UPG2179TB-E4 marking g4c

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2179TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG2179TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 2.5


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    PDF PG2179TB PG2179TB

    marking g4c

    Abstract: HS350 PG2179TB VP215 UPG2179TB-E4
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2179TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG2179TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 2.5


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    PDF PG2179TB PG2179TB marking g4c HS350 VP215 UPG2179TB-E4

    08B8H

    Abstract: voice control home appliances R19UH0028EJ R19UH0029EJ Home appliance controlling PD77630A bt.656 interface burst signal composer technology S19262
    Text: User’s Manual Multimedia Processor for Mobile Applications System Control/General-Purpose I/O Interface EMMA MobileTM1 Document No. R19UH0029EJ0500 5th edition (S19265EJ5V0UM00) Date Published June 2010 2010 Renesas Electronics Corporation. All rights reserved.


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    PDF R19UH0029EJ0500 S19265EJ5V0UM00) re9044 08B8H voice control home appliances R19UH0028EJ R19UH0029EJ Home appliance controlling PD77630A bt.656 interface burst signal composer technology S19262

    HS350

    Abstract: package T6R
    Text: GaAs INTEGRATED CIRCUIT PG2406T6R 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from


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    PDF PG2406T6R PG2406T6R HS350 package T6R

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2406TB 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from


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    PDF PG2406TB PG2406TB

    UPG2158T5K-E2-A

    Abstract: No abstract text available
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2158T5K L, S-BAND SPDT SWITCH DESCRIPTION The µPG2158T5K is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from


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    PDF PG2158T5K PG2158T5K UPG2158T5K-E2-A

    PG2406TB

    Abstract: No abstract text available
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2406TB 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from


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    PDF PG2406TB PG2406TB

    HS350

    Abstract: VP215
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2030TK L, S-BAND SPDT SWITCH DESCRIPTION The µPG2030TK is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 2.7 to 3.0 V. This device can operate frequency from


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    PDF PG2030TK PG2030TK HS350 VP215

    Marking G2

    Abstract: HS350
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2158T5K L, S-BAND SPDT SWITCH DESCRIPTION The µPG2158T5K is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from


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    PDF PG2158T5K PG2158T5K Marking G2 HS350

    NEC C 3568

    Abstract: SW SPDT 6pin HS350
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2151TK L, S-BAND SPDT SWITCH DESCRIPTION The μPG2151TK is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from


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    PDF PG2151TK PG2151TK NEC C 3568 SW SPDT 6pin HS350

    HS350

    Abstract: PG2159T6R
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2159T6R L, S-BAND SPDT SWITCH DESCRIPTION The μPG2159T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band applications. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from


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    PDF PG2159T6R PG2159T6R HS350

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2151T5K L, S-BAND SPDT SWITCH DESCRIPTION The µPG2151T5K is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from


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    PDF PG2151T5K PG2151T5K

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2406T6R 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from


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    PDF PG2406T6R PG2406T6R

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2406T6R 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from


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    PDF PG2406T6R PG2406T6R

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2406T6R 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from


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    PDF PG2406T6R PG2406T6R

    uPG2214TK

    Abstract: HS350 PG2214TK VP215
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2214TK L, S-BAND SPDT SWITCH DESCRIPTION The µPG2214TK is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from


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    PDF PG2214TK PG2214TK uPG2214TK HS350 VP215

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2159T6R L, S-BAND SPDT SWITCH DESCRIPTION The μPG2159T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band applications. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from


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    PDF PG2159T6R PG2159T6R

    SW SPDT 6pin

    Abstract: HS350 VP215
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2030TK L, S-BAND SPDT SWITCH DESCRIPTION The µPG2030TK is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 2.7 to 3.0 V. This device can operate frequency from


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    PDF PG2030TK PG2030TK SW SPDT 6pin HS350 VP215

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2214TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG2214TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from


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    PDF PG2214TB PG2214TB

    G4j rf

    Abstract: SW SPDT 6pin HS350 VP215 UPG2214Tb
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2214TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG2214TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from


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    PDF PG2214TB PG2214TB G4j rf SW SPDT 6pin HS350 VP215 UPG2214Tb

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2030TK L, S-BAND SPDT SWITCH <R> DESCRIPTION The μPG2030TK is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and other L, S-band applications. This device can operate 2 control switching by control voltage 2.7 to 5.3 V, at frequencies from 0.5 to 2.5 GHz,


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    PDF PG2030TK PG2030TK