MN101C Search Results

Contextual Info: MN101CA5 Series MN101CA5F MN101CFA5G Mask ROM FLASH ROM byte 96K 128K RAM (byte) 4K 10K Type Internal ROM type Package (Lead-free) Minimum Instruction Execution Time LQFP112-P-2020 (ES (Engineering Sample) available) 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.24 µs (at 2.7 V to 5.5 V, 8.4 MHz)

Contextual Info: MN101C457 Type MN101C457 ROM x× 8-bit 16 K RAM (×× 8-bit) 0.5 K Package QFP044-P-1010E *Pb free Minimum Instruction Execution Time 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 0.477 µs (at 2.0 V to 5.5 V, 4.19 MHz)* * The lower limit for operation guarantee for EPROM built-in type is 2.7 V.

Contextual Info: MN101C73 Series Type Internal ROM type MN101C73A MN101CF73A Mask ROM FLASH 32K ROM byte 1.5K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time 2K LQFP064-P-1414, TQFP064-P-1010C 0.1 µs (at 3.0 V to 3.6 V, 10 MHz) 0.235 µs (at 1.8 V to 3.6 V, 4.25 MHz)*

Contextual Info: MN101C38A , MN101C38C Type MN101C38A MN101C38C 32 K 48 K 1.5 K 2K ROM x× 8-bit External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package QFP100-P-1818B *Lead-free, LQFP100-P-1414 *Lead-free Minimum Instruction Execution Time

Contextual Info: MN101C539 Type MN101C539 ROM x× 8-bit 24 K (External memory can not be expanded) RAM (×× 8-bit) 0.5 K (External memory can not be expanded) Package TQFP048-P-0707B *Lead-free Minimum Instruction Execution Time High speed mode: 0.10 µs (at 4.5 V to 5.5 V, 20 MHz)

Contextual Info: MN101C485 , MN101C487 Type MN101C485 MN101C487 8K 16 K 0.5 K 0.5 K ROM x× 8-bit External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package LQFP064-P-1414 *Lead-free, TQFP064-P-1010B *Lead-free Minimum Instruction Execution Time

Contextual Info: MN101C273 Type MN101C273 ROM x× 8-bit 4K RAM (×× 8-bit) 0.5 K Package (Conventional Package) SDIP028-P-0400D *Lead-free (SDIP028-P-0400) Minimum Instruction Execution Time 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 1.00 µs (at 2.0 V to 5.5 V, 2 MHz)* * The lower limit for operation guarantee for EPROM built-in type is 2.7 V.

Contextual Info: MN101C42 Series MN101C425 Type MN101C427 MN101CP427 Mask ROM Internal ROM type EPROM ROM byte 8K 16K RAM (byte) 0.25K 0.5K QFP044-P-1010F, SDIP042-P-0600C, TQFP048-P-0707B 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 0.477 µs (at 2.0 V to 5.5 V, 4.19 MHz)*

Contextual Info: MN101C273 Type MN101C273 ROM x× 8-bit 4K RAM (×× 8-bit) 0.5 K Package (Conventional Package) SDIP028-P-0400D *Lead-free (SDIP028-P-0400) Minimum Instruction Execution Time 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 1.00 µs (at 2.0 V to 5.5 V, 2 MHz)* * The lower limit for operation guarantee for EPROM built-in type is 2.7 V.

Contextual Info: MN101C39 Series Type Internal ROM type MN101C39C MN101CP39C Mask ROM EPROM ROM byte 48K RAM (byte) 2K TQFP080-P-1212D 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz) 125 µs (at 2.0 V to 5.5 V, 32 kHz)* *: The lower limit for operation guarantee for EPROM built-in type is 2.3 V.

Contextual Info: MN101C94 Series MN101C94A MN101CF94D Mask ROM FLASH ROM byte 32K 64K RAM (byte) 1K 2K Type Internal ROM type QFP044-P-1010F 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 0.477 µs (at 2.0 V to 5.5 V, 4.19 MHz)* *: The lower limit for operation guarantee for flash memory built-in type is 2.5 V.

Contextual Info: MN101C35D Type MN101C35D ROM x× 8-bit 64 K RAM (×× 8-bit) 2K Package QFP100-P-1818B *Lead-free Minimum Instruction Execution Time 0.25 µs (at 2.7 V to 5.5 V, 8 MHz) 125 µs (at 2.2 V to 5.5 V, 32 kHz)* * The lower limit for operation guarantee for EPROM built-in type is 2.7 V.

Contextual Info: MN101C58 Series MN101C589 Type MN101C58A Mask ROM Internal ROM type 24K ROM byte 32K 1.5K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN101CF58D MN101CP58A FLASH EPROM 64K 32K 2K 1.5K LQFP064-P-1414 0.1 µs (at 4.5 V to 5.5 V, 20 MHz)

Contextual Info: MN101C48 Series MN101C485 Type MN101C487 MN101CP487 Mask ROM Internal ROM type EPROM 8K ROM byte 16K 0.5K RAM (byte) LQFP064-P-1414, TQFP064-P-1010B 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz) 125 µs (at 2.0 V to 5.5 V, 32 kHz)*

kaseikyo

Contextual Info: MN101C57 Series MN101C57C Type MN101C57D FLASH 48K ROM byte MN101CF57D Mask ROM Internal ROM type 64K 2K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time QFP100-P-1818B 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz)

MN101C03A

Abstract: MN101C037 0404C diode p50ut ce approval L-C19 a11 dm he nmv BP TV fx CQ 1.000 crystal oscillator 4Mhz diode 61bp dwm 152
Contextual Info: Chapter 1 Overview 1-1 Product Overview 1-1-1 Overview The MN101C00 series of 8-bit single chip microcomputers incorporate several types of peripheral functions. This chip series is well suited for VCR, MD, TV, CD, LD, printer, telephone, home automation, pager, air conditioner, PPC, remote control, fax machine,

ta 8718

Abstract: MN101C249
Contextual Info: □ MN101C249 M N 101C 249 1 Type I ROM x8-bit 24K (External m e m ory can be expanded) I RAM (x8-bit) 1024 (External m em ory can be expanded) 1 Minimum Instruction Execution Time 0.1 0 iis (at 4 .5 to 5 .5 V , 20M H z) 0 .2 5 (is (a t 2 .7 to 5 .5 V , 8M Hz)

Contextual Info: MN101C65C , MN101C65D Type MN101C65C under planning MN101C65D (under planning) ROM (x× 8-bit) 48 K 64 K RAM (×× 8-bit) 2K 2K Package QFP100-P-1818B *Lead-free (under planning), LQFP100-P-1414 *Lead-free (under planning) Minimum Instruction Execution Time

Contextual Info: Issued: August 20, 1999 MN101C00 Compiler, language User's Manual Record of Changes Ver.2 to Ver.4 page Line 3 157 colophon Sales Offices <Definition> A: add D: delete C: modify, change definition 21 26 28- Description of Changes former version Using This Manual

MN101C23D

Abstract: MN101C00 MN101C23A MN101C23C DM 8183 x04028
Contextual Info: M IC R O C O M P U T E R M N 101C00 MN101C23A/23C/23D 35A/35C/35D LSI 説明書 Pub.No.21435-011 PanaXSeriesは松下電器産業株式会社の商標です。 その他記載された会社名及びロゴ、製品名などは該当する各社の商標または登録商標です。

Contextual Info: MN101CF87GBL CCR20.0MXC7 Tc p 25 Cdeg] a. U1H/U1L [U1 Q 0 Tupical — ~ * Unrst UIH sUIL eb. U2H/U2L CU] U2H b- U2L sc. Fosc .3 .1 -.1 -.3 -.5 400 300 200 100 60 55 50 45 40 EX] d, Trise i, Duty CuSl EX] Udd f. Ustart CU] m Typical = I.84 Worst = 1.86 g. Uhold

99304

Contextual Info: MN101C10RW E1 Rf - CMohm ] 1 .1 FC R 4.0M C 5 Ta= G 7 a. V1H/V1L [V] 20 [d eg] T y p ic a l W orst 5 3 1 -1 7 5 3 1 -1 .5 .3 .1 1 -.3 -.5 400 30 0 200 100 60 55 50 45 40 4.5 5 Vdd f. g. V start V h o ld 5.5 [V ] [V ] Typ i c a l = 1.53 W orst = 1.56 Typ i c a l

EL2044

Contextual Info: MN101C87AAA1 - CCR20.0MXC7 Ta= 25 Cdeg] a. U1H/U1L [U1 UIH a- U1L j" b. U2H/U2L .3 .1 -.1 -.3 -.5 400 Q 0 Tupical — ~ * Unrst CU] U2H - U2L s- c. Fosc EX] d, Trise CuSl 300 200 100 60 i, Duty EX] 55 50 45 40 Udd f. Ustart CU] m Typical = I.85 Worst = 1.87

Contextual Info: MN101CF87GBL - I FCR8.0MC5 Fig.a~e Udd= 5 EU] 0-B Typical V -•i ' , , mi, 'ifb. U2H/U2L CU] U2H V -tf, -i ' , A - 1 -0- d a. U1H/U1L CU1 mim V V bA4 V ,U?li "'1- c. Fosc 5 EX] . - -Vu 1 - r ^ r - _ _ 3 -•ff5 -.3 J I I I d, Trise