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    MMIC X-BAND AMPLIFIER Search Results

    MMIC X-BAND AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    CLC425AJE Rochester Electronics LLC OP-AMP, 800uV OFFSET-MAX, 1900MHz BAND WIDTH, PDSO8, PLASTIC, SOIC-8 Visit Rochester Electronics LLC Buy
    MAX4352EUK-T Rochester Electronics LLC OP-AMP, 12000uV OFFSET-MAX, 30MHz BAND WIDTH, PDSO5, MO-178AA, SOT-23, 5 PIN Visit Rochester Electronics LLC Buy
    LM1536H/883 Rochester Electronics LLC Operational Amplifier Visit Rochester Electronics LLC Buy
    HA1-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy

    MMIC X-BAND AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    x-band mmic core chip

    Abstract: x-band mmic phase shifter using lumped elements mmic core chip x-band microwave fet X band 5-bit phase shifter X-Band T/R digital phase shifter X band attenuator mmic A
    Text: A GaAs X-Band Multifunction Control MMIC Using the MSAG Process Abstract This paper describes efforts to achieve first pass design success for an X-band control MMIC consisting of multi-bit phase shifter, multi-bit attenuator, amplifier and serial-to-parallel


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: EMM5079X X / Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 25 dBm Typ. •High Gain; GL = 23.5 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The EMM5079X is a wide band power amplifier MMIC that


    Original     		PDF EMM5079X EMM5079X 1906B,

    EMM5079

    Abstract: EMM5079X
    Text: EMM5079X X / Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 25 dBm Typ. •High Gain; GL = 23.5 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The EMM5079X is a wide band power amplifier MMIC that


    Original     		PDF EMM5079X EMM5079X 12nce 1906B, EMM5079

    EMM5079

    Abstract: ku vsat amplifier ED-4701 F14G 450MA
    Text: Preliminary ES/EMM5079X X/ Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 25 dBm Typ. •High Gain; GL = 25 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The ES/EMM5079X is a wide band power amplifier MMIC that


    Original     		PDF ES/EMM5079X ES/EMM5079X 1906B, EMM5079 ku vsat amplifier ED-4701 F14G 450MA

    RF Power Amplifier 125KHz

    Abstract: RFHA5966AX 4500m 1n4148 die GAAS FET AMPLIFIER x-band 10w RFHA5966A x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
    Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF


    Original     		PDF RFHA5966AX RFHA5966A 4500m 4000m 41dBm RFHA5966A 1N4148, RF Power Amplifier 125KHz 1n4148 die GAAS FET AMPLIFIER x-band 10w x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm

    MMIC X-band amplifier

    Abstract: No abstract text available
    Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF


    Original     		PDF RFHA5966A RFHA5966AX 41dBm RFHA5966A Radar023 1N4148, DS111023 MMIC X-band amplifier

    X-band amplifier

    Abstract: 462 008 0004 00 AF
    Text: EMM5068X X-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=26.0dB (typ.) Broad Band: 9.5~13.3GHz Impedance Matched Zin/Zout=50 Device DESCRIPTION The EMM5068X is a MMIC amplifier that contains a three-stage amplifier, internally matched, for standard communications band in the


    Original     		PDF EMM5068X EMM5068X X-band amplifier 462 008 0004 00 AF

    Untitled

    Abstract: No abstract text available
    Text: EMM5079ZB X / Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 24.0 dBm Typ. •High Gain; GL = 23 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω •QFN 20pin Plastic Mold Package(ZB) DESCRIPTION The EMM5079ZB is a wide band power amplifier MMIC that


    Original     		PDF EMM5079ZB 20pin EMM5079ZB

    EMM5079

    Abstract: emm5079zb
    Text: EMM5079ZB X / Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 24.0 dBm Typ. •High Gain; GL = 23 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω •QFN 20pin Plastic Mold Package(ZB) DESCRIPTION The EMM5079ZB is a wide band power amplifier MMIC that


    Original     		PDF EMM5079ZB 20pin EMM5079ZB EMM5079

    EMM5079

    Abstract: EMM5079ZB SPO-2114 RO4003 emm5079zbt MA2830
    Text: EMM5079ZB X / Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 24.0 dBm Typ. •High Gain; GL = 23 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω •QFN 20pin Plastic Mold Package(ZB) DESCRIPTION The EMM5079ZB is a wide band power amplifier MMIC that


    Original     		PDF EMM5079ZB 20pin EMM5079ZB EMM5079 SPO-2114 RO4003 emm5079zbt MA2830

    EMM5068X

    Abstract: X-band amplifier SCL 1058 x-band mmic MMIC X-band amplifier ED-4701 emm5068
    Text: EMM5068X X-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 9.5~13.3GHz ・Impedance Matched Zin/Zout=50Ω Device DESCRIPTION The EMM5068X is a MMIC amplifier that contains a three-stage


    Original     		PDF EMM5068X EMM5068X X-band amplifier SCL 1058 x-band mmic MMIC X-band amplifier ED-4701 emm5068

    EMM5068

    Abstract: No abstract text available
    Text: EMM5068VU X/Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=26.0dB (typ.) Broad Band: 9.5 to 13.3GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5068VU is a MMIC amplifier that contains a three-stages


    Original     		PDF EMM5068VU 50ohm EMM5068VU EMM5068

    emm5068

    Abstract: No abstract text available
    Text: EMM5068VU X/Ku-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 9.5-13.3GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5068VU is a MMIC amplifier that contains a three-stages


    Original     		PDF EMM5068VU EMM5068VU emm5068

    Untitled

    Abstract: No abstract text available
    Text: EMM5068VU X/Ku-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 9.5-13.3GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5068VU is a MMIC amplifier that contains a three-stages


    Original     		PDF EMM5068VU EMM5068VU

    X-band Gan Hemt

    Abstract: FMA3015 MIL-HDBK-263 9-GHz
    Text: FMA3015 FMA3015 X-BAND 7.5W HIGH POWER AMPLIFIER GAAS MMIC Die: 4.52mmx3.05mm Product Description Features The FMA3015 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare


    Original     		PDF FMA3015 52mmx3 FMA3015 FMA3015-000 FMA3015-000SQ FMA3015-000S3 DS081118 FMA3015-000SB X-band Gan Hemt MIL-HDBK-263 9-GHz

    X-band Gan Hemt

    Abstract: MIL-HDBK-263 HIGH POWER SUITABLE x-BAND AMPLIFIER X-band GaAs pHEMT MMIC Chip
    Text: FMA3010 FMA3010 X-BAND 5 W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3010 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare


    Original     		PDF FMA3010 FMA3010 FMA3010-000 FMA3010-000SQ DS090727 FMA3010-000S3 X-band Gan Hemt MIL-HDBK-263 HIGH POWER SUITABLE x-BAND AMPLIFIER X-band GaAs pHEMT MMIC Chip

    X-band Gan Hemt

    Abstract: 84-1 CONDUCTIVE EPOXY MIL-HDBK-263 84-1 LMIT x-Band Hemt Amplifier
    Text: FMA3015 FMA3015 X-BAND 7.5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3015 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare


    Original     		PDF FMA3015 FMA3015 FMA3015-000 FMA3015-000SQ DS090306 FMA3015-000S3 X-band Gan Hemt 84-1 CONDUCTIVE EPOXY MIL-HDBK-263 84-1 LMIT x-Band Hemt Amplifier

    Untitled

    Abstract: No abstract text available
    Text: FMA3010 FMA3010 X-BAND 5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3010 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare


    Original     		PDF FMA3010 FMA3010 FMA3010-000 FMA3010-000SQ DS091124 FMA3010-000S3

    X-band Gan Hemt

    Abstract: MIL-HDBK-263 fma3010
    Text: FMA3010 FMA3010 X-BAND 5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3010 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare


    Original     		PDF FMA3010 FMA3010 FMA3010-000 FMA3010-000SQ DS090612 FMA3010-000S3 X-band Gan Hemt MIL-HDBK-263

    X-band Gan Hemt

    Abstract: MIL-HDBK-263 D20BT470K1EX
    Text: FMA3010 FMA3010 X-BAND 5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3010 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare


    Original     		PDF FMA3010 FMA3010 FMA3010-000 FMA3010-000SQ DS091124 FMA3010-000S3 X-band Gan Hemt MIL-HDBK-263 D20BT470K1EX

    FMA3015

    Abstract: No abstract text available
    Text: FMA3010 X-BAND 5W HIGH POWER AMPLIFIER GAAS MMIC FUNCTIONAL SCHEMATIC: FEATURES: • • • Advance Product Information v0.1 15dB Gain 5W Saturated Output Power at 9V pHEMT Technology VD GENERAL DESCRIPTION RF Input The FMA3015 is a high performance X-Band


    Original     		PDF FMA3010 FMA3015 22-A114. MIL-STD-1686 MILHDBK-263.

    MIL-STD-1686

    Abstract: No abstract text available
    Text: FMA3015 X-BAND 7.5W HIGH POWER AMPLIFIER GAAS MMIC FUNCTIONAL SCHEMATIC: FEATURES: • • • Advance Product Information v0.1 12dB Gain 7.5W Saturated Output Power at 9V pHEMT Technology VD1 GENERAL DESCRIPTION VD2 RF Input The FMA3015 is a high performance X-Band


    Original     		PDF FMA3015 FMA3015 22-A114. MIL-STD-1686 MILHDBK-263.

    FMA3012

    Abstract: 22-A114 x-Band High Power Amplifier x-band mmic
    Text: FMA3012 X-BAND 10W HIGH POWER AMPLIFIER GAAS MMIC FUNCTIONAL SCHEMATIC: FEATURES: • • • Advance Product Information v0.1 16.5dB Gain 10W Saturated Output Power at 9V pHEMT Technology VD1 GENERAL DESCRIPTION VD2 RF Input The FMA3012 is a high performance X-Band


    Original     		PDF FMA3012 FMA3012 22-A114. MIL-STD-1686 MILHDBK-263. 22-A114 x-Band High Power Amplifier x-band mmic

    X-band Gan Hemt

    Abstract: FMA246 A246 MIL-HDBK-263 x-band mmic MIL-STD-1686 X-band GaAs pHEMT MMIC Chip
    Text: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over 8GHz to 14GHz. The supply voltage can be varied from +3V


    Original     		PDF FMA246 FMA246 14GHz. 19dBm FMA246-000 FMA246-000SQ FMA246-000S3 DS090309 X-band Gan Hemt A246 MIL-HDBK-263 x-band mmic MIL-STD-1686 X-band GaAs pHEMT MMIC Chip