MAATGM0001
Abstract: MMIC s-band attenuator MAATGM0001-DIE S-band mmic
Text: RO-P-DS-3043 - - MAATGM0001-DIE S-Band Attenuator 2.0 – 6.0 GHz Features ♦ ♦ ♦ ♦ Preliminary Information 2.0 - 6.0 GHz GaAs MMIC Attenuator 2.0 to 6.0 GHz Operation 6 Bit Attenuator TTL Control Inputs Self-Aligned MSAG MESFET Process Primary Applications
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RO-P-DS-3043
MAATGM0001-DIE
MAATGM0001-Die
MAATGM0001
MMIC s-band attenuator
S-band mmic
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IS-54
Abstract: SPDT FETs uPG13xG
Text: µPG13xG SERIES L-BAND SPDT SWITCH GaAs MMIC 1. OVERVIEW OF SERIES The µPG13xG Series is a collection of GaAs MMICs developed as SPDT Single-Pole, Double-Throw switches for digital mobile communications terminals on the L to S bands. These ICs can operate from 100 MHz to 2.5 GHz
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PG13xG
PG130G
PG131G
IS-54
SPDT FETs
uPG13xG
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variable resistor
Abstract: mmic A MS-012AA AT65-0008 8 PIN pin diode attenuator
Text: PRODUCT FEATURE A VOLTAGE VARIABLE ATTENUATOR USING SILICON PIN DIODES AND A PASSIVE GAAS MMIC IN A PLASTIC SMT PACKAGE A unique voltage variable attenuator VVA has been developed for the commercial wireless market. The device has linear operating power and intercept points
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AT65-0008,
variable resistor
mmic A
MS-012AA
AT65-0008
8 PIN pin diode attenuator
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Untitled
Abstract: No abstract text available
Text: HMC110G16 v01.0301 D E U N I T N O T C C S U I D D O PR MICROWAVE CORPORATION 1 dB LSB GaAs MMIC SMT 5-BIT DIGITAL ATTENUATOR, DC - 2.0 GHz ATTENUATORS - SMT 2 Typical Applications Features • Base station Infrustructure Bandwidth: DC - 2 GHz • Portable Wireless
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HMC110G16
HMC110G16
canC04
CD4689
100pF
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5965-5089E
Abstract: DRT1-3813 DRT1-3823
Text: Digital Radio Transmitter Modules for 37 to 40␣ GHz Technical Data DRT1-38XX Features Description • Integrated Microwave/ Millimeter-Wave Modules This digital radio transmitter module is designed for medium data rate point to point communication systems operating at
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DRT1-38XX
WR-28
DRTI-38XX
5965-5089E
DRT1-3813
DRT1-3823
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DRT1-2311
Abstract: DRT1-2312 DRT1-2321 DRT1-2322 DRT1-23XX
Text: Digital Radio Transmitter Modules for 21.2 to 23.6␣ GHz Technical Data DRT1-23XX Features Description • Integrated Microwave/ Millimeter-Wave Modules This digital radio transmitter module is designed for medium data rate point to point communication systems operating at
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DRT1-23XX
WR-42
DRTI-23XX
DRT1-2311
DRT1-2312
DRT1-2321
DRT1-2322
DRT1-23XX
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rf bpf s band 2.65 ghz to 2.70 ghz
Abstract: DRT1-3813 DRT1-3823 hp mmic 9.75 GHz oscillator 8 GHz VCO DRTI-38XX 1000 MHZ RF transmitter MODULE
Text: Digital Radio Transmitter Modules for 37 to 40 GHz Technical Data DRT1-38XX Features Description • Integrated Microwave/ Millimeter-Wave Modules This digital radio transmitter module is designed for medium data rate point to point communication systems operating at
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DRT1-38XX
5965-5089E
rf bpf s band 2.65 ghz to 2.70 ghz
DRT1-3813
DRT1-3823
hp mmic
9.75 GHz oscillator
8 GHz VCO
DRTI-38XX
1000 MHZ RF transmitter MODULE
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5965-5090E
Abstract: DRT1-2311 DRT1-2312 DRT1-2321 DRT1-2322 DRT1-23XX
Text: Digital Radio Transmitter Modules for 21.2 to 23.6 GHz Technical Data DRT1-23XX Features Description • Integrated Microwave/ Millimeter-Wave Modules This digital radio transmitter module is designed for medium data rate point to point communication systems operating at
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DRT1-23XX
5965-5090E
5965-5090E
DRT1-2311
DRT1-2312
DRT1-2321
DRT1-2322
DRT1-23XX
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gsm Handset Circuit Diagram
Abstract: gsm transceiver circuit diagram of 7436 ic telephone handset circuit schematic diagram Roland e 38 schematic WLAN chips em reader module direct conversion GSM CELERITEK SWITCH GSM module circuit diagram
Text: HIGH HARMONIC-REJECTION MATCHING FILTERS FOR QUAD-BAND POWER AMPLIFIERS In this article, matching filters for GSM amplifiers capable of providing large harmonic rejection are demonstrated using M/A-COM’s high Q GaAs MMIC technology. The matching filters are designed
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HMC313
Abstract: HMC213 HMC361S8G HMC364S8G hmc362 HMC394LP4 HMC341 HMC361 HMC362S8G HMC363
Text: OFF-THE-SHELF INSIDE. HITTITE MICROWAVE CORPORATION SPRING/SUMMER 2001 New Prescalar Product Line Meets The Demands of Broadband Markets! Hittite announces ten 10 new prescalar standard products that operate from DC to 13GHz. Standard division ratios of two, four, and eight have
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13GHz.
OC-48
OC-192
HMC313
HMC213
HMC361S8G
HMC364S8G
hmc362
HMC394LP4
HMC341
HMC361
HMC362S8G
HMC363
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Untitled
Abstract: No abstract text available
Text: bEMSf lST DQlflD'lS 3^4 • MITSUBISHI SEMICONDUCTOR <GaAs MMIC MGF7134P -rv«s' « * * •« ate suW H ^ 2 ta m ^ wriW s""0” 1.90GHz BAND RX^X FRONT-END GaAs MMIC DESCRIPTION MGF7134P is a monolithic microwave integrated circuit for PHS OUTLINE DRAWING
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MGF7134P
90GHz
MGF7134P
55dBc
240MHz)
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Untitled
Abstract: No abstract text available
Text: WIRELESS - Driver AWD1900 Driver MMIC Advanced Product Information Rev 0 1900 MHz Band PCS GaAs Power Amplifier IC DESCRIPTION: The AW D 1900 is a monolithic Driver Amplifier suited for P C S telephone applications. FEATURES: High Linearity Built in Step Attenuator
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AWD1900
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Untitled
Abstract: No abstract text available
Text: 18-50 GHz GaAs MMIC Voltage Variable Attenuator ESAlpha AV850M1-00 Chip C lit lin e F eat ur e s • Single Voltage Control CO o ■ 35 dB Attenuation Range ■ Balanced 0.25 im MESFET Non-Reflective Design ■ 100% On-Wafer RF and DC Testing ■ 100% Visual Inspection to MIL-STD-883
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AV850M1-00
MIL-STD-883
AV850M1
2/99A
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fujitsu mmic ic
Abstract: No abstract text available
Text: FMM5020MU 900 MHz PDC MMIC Driver Preamplifier DESCRIPTION The FM M 5020M U is a MM IC driver pream plifier with gain control and is designed for applications in the 900 MHz band. The driver am plifier includes three am plifier stages and a variable attenuator.
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FMM5020MU
5020M
-55dBc
fujitsu mmic ic
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fujitsu power amplifier GHz
Abstract: fujitsu l band amplifier fujitsu rf power amplifier l band
Text: FMM5021MU 1.5GHz MMIC Driver Amplifier DESCRIPTION The FMM5021MU is a MMIC driver amplifier with gain control that is designed for Personal Digital Cellular PDC applications in the 1,5GHz band. The driver amplifier includes three amplifier stages and a variable attenuator.
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FMM5021MU
FMM5021MU
-60dBc
120mA
FCSI0598M200
fujitsu power amplifier GHz
fujitsu l band amplifier
fujitsu rf power amplifier l band
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k MESFET S parameter
Abstract: No abstract text available
Text: 18-50 GHz GaAs MMIC Voltage Variable Attenuator ESAlpha AV850M2-00 Chip Q j t l i n e F eat ur e s • Dual Voltage Control CM CO CD ■ 35 dB Attenuation Range ■ Triple Gate 0.25 im MESFET Design ■ +10 dBm Pi dB All Attenuation States ■ 100% On-Wafer RF and DC Testing
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AV850M2-00
MIL-STD-883
AV850M2-00
2/99A
k MESFET S parameter
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FMM5024ML
Abstract: No abstract text available
Text: FMM5024ML 800MHz MMIC Driver Amplifier DESCRIPTION The FMM5024ML is a MMIC driver amplifier with gain control and is designed for applications in the 800 to 1000 MHz band. The driver amplifier includes two amplifier stages and a variable attenuator. FEATURES
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FMM5024ML
800MHz
FMM5024ML
-55dBc
FCSI0697M200
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KA 1046 Y 620
Abstract: No abstract text available
Text: CS-516003 ELECTRONICS Broadband UHF Voltage Variable Attenuator Sam sung M icrow ave Sam iconductor March1996 Prelim inary 300 - 3000 MHz Description Features (Typical) The C ? - * 16003 is a high performance Monolithic Microwave Integrated Circuit (MMIC) housed in a
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CS-516003
arch1996
CS-516003
15jiA
KA 1046 Y 620
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AT-108-PIN
Abstract: No abstract text available
Text: A fa Voltage Variable Absorptive Attenuator. 40 dB AT-108 0.5-2 GHz July ’93 Features • • • • • • SO-8 Single Positive Voltage Control 40 dB Attenuation Range at 0.9 GHz ±2 dB Linearity from B.S.L. Low DC Power Consumption Low Cost SOIC8 Plastic Package
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AT-108
AT-108-PIN
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Untitled
Abstract: No abstract text available
Text: Voltage Variable Absorptive Attenuator DC-2 GHz AT-259 SOT-143 Features Attenuation: 12 dB at 1 GHz Low Intermodulation Products Low DC Power Consumption: 50 |iW Single Voltage Control 0 to -4 Volts Nanosecond Switching Speed Tem perature Range: -40 'C to + 85"C
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AT-259
OT-143
AT-259
OT143
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J 3305-1
Abstract: T-108 T108 at-108
Text: Voltage Variable Absorptive Attenuator. 40 dB 0.5-2 GHZ ^July '93 AT-108 Features SO-8 • Single Positive Voltage Control • 40 dB Attenuation Range at 0.9 G H z "« .2284-,2440 n s o 'io m <5'80-6-20 hot • ±2 dB Linearity from B.S.L. • Low DC Power Consumption
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AT-108
T-108
AT-108
J 3305-1
T108
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fr 309
Abstract: AT-309TR sj86 AT-309 AT-309RTR JC63S-J
Text: « 4 M P A » v w iy Voltage Variable Absorptive Attenuator, 20 dB DC - 2 GHz AT-309 V 2.00 SO-8 Features • • • • • • • • 20 dB Voltage Variable Attenuation Very Low Power Consumption: 50 pW Low Intermodulation Products Dual Voltage Control 0 to -4 Volts
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AT-309
AT-309
fr 309
AT-309TR
sj86
AT-309RTR
JC63S-J
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SOT25 POS
Abstract: AT-266 AT-266RTR AT-266TR M513
Text: M/A-OOM Digital Attenuator, 1 Bit, 10 dB Step DC - 2.0 GHz M RF & Microwave Products SOT-25 Plastic Package Features • • • /MOCOVI Single 10 dB Step Low Loss 0.3dB Typ. @ 900 MHz Low Cost Plastic SOT25 Package 1,90 ± 0 ,2 .043 .004 1 ,1 0 + 0 ,2 -0,1
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AT-266
AT-266
OT-25
SOT25 POS
AT-266RTR
AT-266TR
M513
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Untitled
Abstract: No abstract text available
Text: Voltage Variable Absorptive Attenuator DC-2 GHz AT-250 SO-8 Features PIN £ 12 dB Voilage Variable Attenuation Low Intermodulation Products Low DC Power Consumption: 50 |jW Single Voltage Control 0 to -4 Volts Nanosecond Switching Speed Tem perature Range: -40"C to + 85"C
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AT-250
AT-250
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