GaAs MMIC Based Control Components with Integral Drivers
Abstract: RF MESFET S parameters DC bias of gaas FET MESFET MASW6010 GaAs MesFET Application note transistor mesfet
Text: GaAs MMIC Based Control Components with Integral Drivers M537 V4 Introduction This application note describes the fundamental operation and features of a new series of control components. These switches comprise a family of devices that use GaAs FET MMIC technology for the
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Electronic Component Distributor. Source:Infineon Technologies P.N:BGA524N6E6327XTSA1 Desc:IC AMP SI-MMIC Web:http://www.hotenda.cn E-mail:sales@hotenda.cn Phone: +86 075583794354 BGA524N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS)
|
Original
|
PDF
|
BGA524N6E6327XTSA1
BGA524N6
|
NGA-186
Abstract: No abstract text available
Text: Preliminary Preliminary Product Description Stanford Microdevices’ NGA-186 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for
|
Original
|
PDF
|
NGA-186
DC-6000
EDS-101101
|
NGA-186
Abstract: No abstract text available
Text: Preliminary Preliminary Product Description NGA-186 Stanford Microdevices’ NGA-186 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for
|
Original
|
PDF
|
NGA-186
NGA-186
1950Mhz
EDS-101101
|
Untitled
Abstract: No abstract text available
Text: Preliminary NGA-186 Product Description Sirenza Microdevices NGA-186 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up
|
Original
|
PDF
|
NGA-186
NGA-186
DC-6000
AN-059
1950Mhz
EDS-101101
|
transistor 20 dB 2400 mhz
Abstract: No abstract text available
Text: Preliminary NGA-186 Product Description Sirenza Microdevices NGA-186 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up
|
Original
|
PDF
|
NGA-186
NGA-186
DC-6000
AN-059
EDS-101101
transistor 20 dB 2400 mhz
|
Untitled
Abstract: No abstract text available
Text: SMA3103 Ordering number : ENA1580 SANYO Semiconductors DATA SHEET SMA3103 Silicon MMIC Wideband Amplifier Features • • • • • High Gain Wideband response Low current High output power Port impedance : Gp=26.5dB typ. @1GHz : fu=3.3GHz : ICC=19mA typ
|
Original
|
PDF
|
SMA3103
ENA1580
A1580-5/5
|
Untitled
Abstract: No abstract text available
Text: SMA3103 Ordering number : ENA1580 SANYO Semiconductors DATA SHEET SMA3103 Silicon MMIC Wideband Amplifier Features • • • • • High Gain Wideband response Low current High output power Port impedance : Gp=26.5dB typ. @1GHz : fu=3.3GHz : ICC=19mA typ
|
Original
|
PDF
|
SMA3103
ENA1580
A1580-5/5
|
NGA-186
Abstract: Sirenza Microdevices, Inc mmic n1 SIRENZA MARKING
Text: Preliminary Preliminary NGA-186 Product Description Sirenza Microdevices NGA-186 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up
|
Original
|
PDF
|
NGA-186
NGA-186
DC-6000
EDS-101101
Sirenza Microdevices, Inc
mmic n1
SIRENZA MARKING
|
Untitled
Abstract: No abstract text available
Text: SMA3103 Ordering number : ENA1580A SANYO Semiconductors DATA SHEET SMA3103 Silicon MMIC Wideband Amplifier Features • • • • • High Gain Wideband response Low current High output power Port impedance : Gp=26.5dB typ. @1GHz : fu=3.3GHz : ICC=19mA typ
|
Original
|
PDF
|
SMA3103
ENA1580A
70etc.
A1580-8/8
|
Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1580A SMA3103 MMIC Amplifier, 5V, 19mA, 0.1 to 3.3GHz, MCPH6 http://onsemi.com Features • • • • • High Gain Wideband response Low current High output power Port impedance : Gp=26.5dB typ. @1GHz : fu=3.3GHz : ICC=19mA typ : Po 1dB =5dBm
|
Original
|
PDF
|
ENA1580A
SMA3103
A1580-8/8
|
AN-081
Abstract: BGA619
Text: Application Note No. 081 Discrete Semiconductors The BGA619 Silicon-Germanium High IP3 Low Noise Amplifier in PCS Receiver Applications Features • Easy-to-use LNA MMIC in 70 GHz ft SiGe technology • Tiny „Green“ P-TSLP-7-1 package no Lead or Halogen
|
Original
|
PDF
|
BGA619
AN081
AN-081
|
mmic N10
Abstract: HP MMIC INA INA-10386 INA-10386 N10 mmic amplifier N10 INA-10386-TR1 ina 10386 N10 MMIC HP MMIC INA-10386-BLK
Text: Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-10386 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 1.8 GHz • 26 dB Typical Gain at 1.5␣ GHz • 10 dBm Typical P1dB at 1.5␣ GHz • Unconditionally Stable
|
Original
|
PDF
|
INA-10386
INA-10386
5965-9679E
5967-6159E
mmic N10
HP MMIC INA
INA-10386 N10
mmic amplifier N10
INA-10386-TR1
ina 10386
N10 MMIC
HP MMIC
INA-10386-BLK
|
mmic N10
Abstract: N10 MMIC mmic amplifier N10 INA-10386 N10 INA-10386 INA-10386-TR1 INA-10386-BLK ina 10386 INA-10386 AGILENT
Text: Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-10386 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 1.8 GHz • 26 dB Typical Gain at 1.5 GHz • 10 dBm Typical P1dB at 1.5 GHz • Unconditionally Stable k>1
|
Original
|
PDF
|
INA-10386
INA-10386
5965-9679E
5967-6159E
mmic N10
N10 MMIC
mmic amplifier N10
INA-10386 N10
INA-10386-TR1
INA-10386-BLK
ina 10386
INA-10386 AGILENT
|
|
|
disadvantage of fm transmitter single stage
Abstract: XP1000 line out amplifiers d2 signal path designer
Text: Application Note: Using Multiple MMIC Power Amplifiers to Increase IP3 and P1dB Scope Critical specifications for the transmitter output stage in microwave and millimeter-wave radios are the P1dB or PSAT point for non-linear systems (e.g. FM, FSK), and the IP3 for linear systems (e.g. QAM). For a specific application,
|
Original
|
PDF
|
XP1000
disadvantage of fm transmitter single stage
line out amplifiers d2
signal path designer
|
ACA0861
Abstract: ACA0861A ACA0861B ACA0861C ACA0861D
Text: ACA0861 - A, B, C, D 750/860 MHz CATV Line Amplifier MMIC Data Sheet - Rev 2.0 FEATURES • · · · · · · · · Flat Gain Very Low Distortion Excellent Input/Output Match Low DC Power Consumption Good RF Stability with High VSWR Load Conditions Surface Mount Package Compatible with
|
Original
|
PDF
|
ACA0861
ACA0861A
ACA0861B
ACA0861C
ACA0861D
|
Untitled
Abstract: No abstract text available
Text: BGA7204 400 MHz to 2750 MHz high linearity variable gain amplifier Rev. 2 — 18 January 2012 Product data sheet 1. Product profile 1.1 General description The BGA7204 MMIC is an extremely linear Variable Gain Amplifier VGA , operating from 0.4 GHz to 2.75 GHz. At minimum attenuation it has a gain of 18.5 dB, an output IP3 of
|
Original
|
PDF
|
BGA7204
BGA7204
|
Untitled
Abstract: No abstract text available
Text: BGA7204 400 MHz to 2750 MHz high linearity variable gain amplifier Rev. 3 — 28 January 2013 Product data sheet 1. Product profile 1.1 General description The BGA7204 MMIC is an extremely linear Variable Gain Amplifier VGA , operating from 0.4 GHz to 2.75 GHz. At minimum attenuation it has a gain of 18.5 dB, an output
|
Original
|
PDF
|
BGA7204
BGA7204
|
CDH60
Abstract: NEMJ10006 MMIC code D PIN diode 12 GHz 60 GHz PIN diode NEMJ10003 diode PIN 60 Ghz mmic j 60 GHz PIN diode gaas E3 MMIC
Text: □111745 0000345 3 BME D HICRONETICS INC IMRÔ ff" Single Pole Three Throw Z • T 'S f '/ / LOW BAND 10 MHz to 1000 MHz (GaAs MMIC HIGH BAND 1 GHz to 18.5 GHz (PIN Diode) 'D E a c e t g n f i z a •GaAs, MMIC and PIN diode technology ♦High reliability
|
OCR Scan
|
PDF
|
NEMJ10003
MIL-STD-105
NEMJ10006
MIL-STD-883
CDH60
MMIC code D
PIN diode 12 GHz
60 GHz PIN diode
diode PIN 60 Ghz
mmic j
60 GHz PIN diode gaas
E3 MMIC
|
LM 1889
Abstract: No abstract text available
Text: ICA2002 P 10.5 to 12.0 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ ♦ E^n1 LOW NOISE FIGURE IDEAL FOR RECEIVER, DRIVER, AND GAIN BLOCK APPLICATIONS SINGLE POWER SUPPLY: +5V ON-CHIP BIAS NETWORK 100% ON-WAFER RF-TESTED SELECTABLE BIAS OPTIONS • ~ Z ZI 3.£
|
OCR Scan
|
PDF
|
ICA2002
ICA2002
1-800-WJ1-4401
LM 1889
|
Untitled
Abstract: No abstract text available
Text: FEB 4 1991 SEC- SILICON MMIC UPB584B/G PRELIMINARY 2.5 GHz Divide-By-2 Prescaler FEATURES OUTLINE DIMENSIONS • HIGH FREQUENCY OPERATION: 2.5 GHz Units in mm OUTLINE BF08 • W IDE BAND APPLICATION: 0.5 to 2.5 GHz 7.0±0.5 • SINGLE SUPPLY VOLTAGE: Vcc = 5 V ±10%
|
OCR Scan
|
PDF
|
UPB584B/G
UPB584
UPB584B/G,
NOTICE-498
|
msa0336
Abstract: No abstract text available
Text: ThalHEWLETT A "HM PACKARD Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0335, -0336 Features • Cascadable 50 Q. Gain Block • 3 dB Bandwidth: DC to 2.7 GHz • 12.0 dB Typical Gain at 1.0 GHz • 10.0 dBm Typical PldB at 1.0 GHz • U nconditionally Stable
|
OCR Scan
|
PDF
|
MSA-0335,
5965-9568E
5968-4081E
msa0336
|
Untitled
Abstract: No abstract text available
Text: bS Stanford Microdevices Product Description SSW-424 Stanford M icrodevices’ SSW -424 is a high performance Gallium Arsenide Field Effect Transistor M MIC switch housed in a low-cost surface-m ountable small outline plastic package. DC-6 GHz High Power G a As MMIC SPDT Switch
|
OCR Scan
|
PDF
|
SSW-424
|
gamma
Abstract: No abstract text available
Text: T R I Q U I N T TQgJi WIRELESS S E M I C O N D U C T O R , I N C COMMUNICATIONS TQ9201J Block Diagram Low-Current MMIC Downconverter Features • LNA and Mixer individually accessible • Flexible port matching • Two selectable RF inputs Product Description
|
OCR Scan
|
PDF
|
TQ9201J
SO-14
TQ9201J
T09201J
gamma
|
