MMBTSC3324 Search Results

Contextual Info: MMBTSC3324 NPN Silicon Epitaxial Planar Transistor for audio frequency low noise amplifier applications. The transistor is subdivided into two groups G and L, according to its DC current gain. SOT-23 Plastic Package Features: High voltage: VCEO=120V High hFE:hFE=200-700

Contextual Info: MMBTSC3324 NPN Silicon Epitaxial Planar Transistor for audio frequency low noise amplifier applications. The transistor is subdivided into two groups G and L, according to its DC current gain. SOT-23 Plastic Package Features: z High voltage: VCEO=120V z High hFE:hFE=200-700

2SA1312

Contextual Info: MMBTSC3324LT1 NPN Silicon Epitaxial Planar Transistor for audio frequency low noise amplifier applications. The transistor is subdivided into two groups G and L, according to its DC current gain. SOT-23 Plastic Package Features: High voltage: VCEO=120V Excellent hFE linearity: hFE IC=0.1mA /hFE(IC=2mA)

lowest noise audio NPN

Abstract: 2SA1312 hFE is transistor
Contextual Info: MMBTSC3324LT1 NPN Silicon Epitaxial Planar Transistor for audio frequency low noise amplifier applications. The transistor is subdivided into two groups G and L, according to its DC current gain. SOT-23 Plastic Package Features: High voltage: VCEO=120V Excellent hFE linearity: hFE IC=0.1mA /hFE(IC=2mA)