MMBTA56 ON Search Results

MMBTA55

Abstract: MMBTA56
Contextual Info: MMBTA55 MMBTA56 Driver PNP 3 1 2 SOT-23 V CEO MMBTA55 -60 -60 -4.0 -5 MMBTA56 -80 -80 -4.0 MMBTA55=2H, MMBTA56=2GM - 3 MMBTA55 MMBTA56 -60 -80 - MMBTA55 MMBTA56 -60 -80 - -4.0 I B =0) -6 -8 S MMBTA55 MMBTA56 _ 300us, Duty Cycle < _ 2.0% 3.Pulse Test:Pulse Width <

Contextual Info: MMBTA55 MMBTA56 Driver PNP 3 * “G” Lead Pb -Free 1 2 SOT-23 V CEO MMBTA55 -60 -60 -4.0 -5 MMBTA56 -80 -80 -4.0 MMBTA55=2H, MMBTA56=2GM - (3) MMBTA55 MMBTA56 -60 -80 - MMBTA55 MMBTA56 -60 -80 - -4.0 I B =0) -6 -8 S MMBTA55 MMBTA56 _ 300us, Duty Cycle <

2GM sot

Abstract: MMBTA55 MMBTA55LT1 MMBTA55LT3 MMBTA56 MMBTA56LT1 MMBTA56LT3 2gm marking code
Contextual Info: MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 is a Preferred Device Driver Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Value Unit VCEO MMBTA55 MMBTA56 Collector–Base Voltage –60 –80 VCBO MMBTA55 MMBTA56 Emitter–Base Voltage

MMBTA05

Abstract: MMBTA06 MMBTA55 MMBTA56
Contextual Info: MMBTA55 . MMBTA56 MMBTA55 . MMBTA56 General Purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-08-09 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case Kunststoffgehäuse

Contextual Info: MMBTA55 THRU MMBTA56 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • This device is designed for general purpose amplifier applications at collector current to 300mA Marking Code: MMBTA55=2H MMBTA56=2GM

k2g marking

Abstract: MMBTA55
Contextual Info: MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODELS: MMBTA55 MMBTA56 Features • · · Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data

K2X pnp

Abstract: K2X sot-23 K2X SOT23 k2x transistor surface mount sot 23 layout mmbta56 pnp k2x
Contextual Info: MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODELS: MMBTA55 MMBTA56 Features • · · Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data

Contextual Info: SMBTA56/ MMBTA56 PNP Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBTA06 / MMBTA06 NPN Type SMBTA56/ MMBTA56 Marking s2G 1 Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings

MMBTA55

Abstract: MMBTA56 J-STD-020A MMBTA05 MMBTA06
Contextual Info: SPICE MODELS: MMBTA55 MMBTA56 MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version

Contextual Info: MMBTA55 . MMBTA56 MMBTA55 . MMBTA56 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2006-08-09 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case

Contextual Info: SPICE MODELS: MMBTA55 MMBTA56 MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 SOT-23 A Ideal for Medium Power Amplification and Switching

MMBTA55

Contextual Info: MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODELS: MMBTA55 MMBTA56 Features • · · Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data

MMBTA56 S2G

Contextual Info: SMBTA56/MMBTA56 PNP Silicon AF Transistor • Low collector-emitter saturation voltage • Complementary type: SMBTA06 / MMBTA06 NPN 2 3 1 • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking SMBTA56/MMBTA56 s2G Pin Configuration

Contextual Info: SPICE MODELS: MMBTA55 MMBTA56 MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 SOT-23 A Ideal for Medium Power Amplification and Switching

MMBTA55

Contextual Info: MMBTA55 / MMBTA56 MMBTA55 / MMBTA56 Surface mount general purpose Si-epitaxial planar transistors Vielzweck Si-Epitaxial Planar-Transistoren für die Oberflächenmontage PNP PNP Version 2005-09-05 1.1 2.9 ±0.1 0.4 Type Code 1.3 ±0.1 2.5 max 3 2 1 1.9 Dimensions / Maße [mm]

Contextual Info: SPICE MODELS: MMBTA55 MMBTA56 MMBTA55 / MMBTA56 Lead-free PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · · · Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 SOT-23 A Ideal for Medium Power Amplification and Switching

K2X pnp

Contextual Info: SPICE MODELS: MMBTA55 MMBTA56 MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Complementary NPN Types Available MMBTA05 / MMBTA06 Ideal for Low Power Amplification and Switching Lead Free/RoHS Compliant (Note 3)

MMBTA56 S2G

Abstract: MMBTA06 SMBTA06
Contextual Info: SMBTA56/MMBTA56 PNP Silicon AF Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBTA06 / MMBTA06 NPN 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBTA56/MMBTA56 s2G Pin Configuration

Contextual Info: SMBTA56/ MMBTA56 PNP Silicon AF Transistor 3 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA06 / MMBTA06 NPN 2 1 Type SMBTA56/ MMBTA56 Marking s2G Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings

Amplifier transistor

Contextual Info: UTC MMBTA06/56 AMPLIFIER TRANSISTOR NPN MMBTA06 PNP MMBTA56 FEATURES *Collector-Emitter Voltage: VCEO=80V *Collector Dissipation: PD=350mW 3 1 MARKING MMBTA06 MMBTA56 2 2G 1G SOT-23 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS TA=25°C PARAMETER

MMBTA56 S2G

Abstract: SMBTA56 MMBTA06 MMBTA56 SMBTA06
Contextual Info: SMBTA56/ MMBTA56 PNP Silicon AF Transistor 3 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA06 / MMBTA06 NPN 2 1 Type SMBTA56/ MMBTA56 Marking s2G Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings

MMBTA56 S2G

Abstract: MMBTA56 MMBTA06 SMBTA06 SMBTA56
Contextual Info: SMBTA56/ MMBTA56 PNP Silicon AF Transistor 3
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: SMBTA06 NPN MMBTA06 (NPN) 2 1 Type SMBTA56/ MMBTA56 Marking s2G 1=B Pin Configuration 2=E 3=C VPS05161 Package SOT23 Maximum Ratings

Contextual Info: MMBTA55 / MMBTA56 MMBTA55 / MMBTA56 Surface mount general purpose Si-epitaxial planar transistors Vielzweck Si-Epitaxial Planar-Transistoren für die Oberflächenmontage PNP PNP Version 2005-09-05 1.1 2.9 ±0.1 0.4 Type Code 1.3 ±0.1 2.5 max 3 2 1 1.9 Dimensions / Maße [mm]

bf91

Contextual Info: MMBTA56 PZTA56 C C E C B TO-92 B SOT-23 E SOT-223 Mark: 2G B E C MPSA56 / MMBTA56 / PZTA56 MPSA56 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum Ratings*