MMBT2907* TRANSISTOR Search Results

MMBT2907A MMBT2907

Contextual Info: MMBT2907 / MMBT2907A MMBT2907 / MMBT2907A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage PNP PNP Version 2012-01-11 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse

MMBT2907A-2F

Abstract: transistor 2F to-236 Application of MMBT2907A MMBT2907 ON MMBT2907 MMBT2222 MMBT2222A MMBT2907A mmbt2907 2f MMBT2907 die
Contextual Info: MMBT2907 / MMBT2907A MMBT2907 / MMBT2907A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage PNP PNP Version 2006-05-15 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse

Contextual Info: MMBT2907 / MMBT2907A MMBT2907 / MMBT2907A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage PNP PNP Version 2006-05-15 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case Kunststoffgehäuse

pn2907

Contextual Info: PN2907 / MMBT2907 PNP General-Purpose Transistor Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from process 63. MMBT2907 PN2907 C E TO-92 SOT-23 Mark:2B EBC B Ordering Information

MMBT2907

Abstract: bt2907a MMBT2907A
Contextual Info: M A X IM U M RATINGS Symbol Rating MMBT2907 MMBT2907Í -4 0 -6 0 Unit v CEO Collector-Base Voltage v CBO Emitter-Base Voltage v EBO -5 .0 Vdc ic -6 0 0 mAdc Collector Current — Continuous 60 MMBT2907LT1 MMBT2907ALT1* Vdc Collector-Emitter Voltage Vdc CASE 318-07, STYLE 6

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT2907 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222) 1. BASE 2. EMITTER Marking: M2B 3. COLLECTOR

MMBT2907

Contextual Info: MO T O R O L A SC XSTRS/R F b&E b3fc>7H54 O O R R Q R b 3> 024 • M A X IM U M RATINGS Rating Symbol MMBT2907 MMBT2907/ v CEO Collector-Base Voltage VCBO Em itter-Base Voltage V e BO - 5 .0 Vdc <c -6 0 0 m Adc C ollector C urrent — C ontinuous -4 0 Unit

MMBT2222ALT1 1P

Abstract: transistor 2222a CURRENT GAIN MMBT2222 equivalent of transistor MMBT2222A m1b marking transistor 2222a npn 2222 transistor
Contextual Info: MMBT2222/ALT1 SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907/ALT1 * Collector Dissipation: Pc max =225mW Shandong Yiguang Electronic Joint stock Co., Ltd NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃

2907 TRANSISTOR PNP

Abstract: 2907a TRANSISTOR PNP MMBT2222 MMBT2907 MMBT2907 2F
Contextual Info: MMBT2907/ALT1 SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR * Complement to MMBT2222/ALT1 * Collector Dissipation: Pc max =225mW Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBT2907 IME 0 | 711.4142 0 0 0 7 2 5 ? t | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

mmbt2709

Abstract: MMBT2709A MMBT27 MMBT2907A-2F MMBT2222 MMBT2222A MMBT2907 MMBT2907A MMBT2907 2F
Contextual Info: MMBT2907, MMBT2907A PNP Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Version 2004-05-04 Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1

Contextual Info: MMBT2907 MMBT2907A PNP General Purpose Transistors COLLECTOR 3 3 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC 2907 -40 2907A -60

Contextual Info: MMBT2907 I MMBT2907A www.surgecomponents.com PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. 1. Base 2. Em itter 3. Collector SOT-23 Plastic Package

MMBT2907

Abstract: MMBT2222 MMBT2222A MMBT2907A
Contextual Info: MMBT2907 / MMBT2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBT2222 and MMBT2222A are recommended.

Contextual Info: MMBT2907 MMBT2907A PNP General Purpose Transistors COLLECTOR 3 3 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC 2907 -40 2907A -60

Contextual Info: General Purpose Transistor PNP MMBT2907/A -G (RoHS Device) Features Epitaxial Planar Die Comstruction Complementary NPN Type Available (MMBT2222A-G) Ideal for Medium Power Amplification and Switching SOT-23 Mechanical Data .122 (3.1) .110 (2.8) Case: SOT-23 Plastic Package

MMBT2907A

Abstract: Application of MMBT2907A MMBT2907 MMBT2907 ON MMBT2222 MMBT2222A
Contextual Info: MMBT2907 / MMBT2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBT2222 and MMBT2222A are recommended.

2907 pnp transistor

Contextual Info: WILLAS FM120-M+ THRU MMBT2907 A LT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY Transistor BARRIER RECTIFIERS -20V- 200V General Purpose Pb Free Product SOD-123+ PACKAGE Package outline Features PNP Silicon process design, excellent power dissipation offers • Batch

MMBT2907

Abstract: MMBT2907A-2F maximum current rating of 2907A pnp transistor MMBT2907A sot-23 15V vebo pnp mmbt2907 2f mmbt2907 2f sot-23
Contextual Info: MMBT2907 MMBT2907A COLLECTOR 3 PNP General Purpose Transistors 3 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC 2907 -40 2907A -60

Contextual Info: MMBT2907 MMBT2907A COLLECTOR 3 PNP General Purpose Transistors 3 * “G” Lead Pb -Free 1 1 BASE 2 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO

Contextual Info: General Purpose Transistor MMBT2907-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction 0.119 (3.00) 0.110 (2.80) -Device is designed as a general purpose 3 amplifier and switching. 0.056 (1.40) 0.047 (1.20) 1 2 0.083 (2.10) Collector 3

Contextual Info: General Purpose Transistor MMBT2907-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction 0.119 (3.00) 0.110 (2.80) -Device is designed as a general purpose 3 amplifier and switching. 0.056 (1.40) 0.047 (1.20) 1 Collector 3 0.083 (2.10) 2

Contextual Info: Transistors SMD Type NPN General Purpose Amplifier MMBT2222 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 ● Complementary PNP type available MMBT2907 1 0.55 ● Epitaxial planar die construction. +0.1 1.3-0.1 +0.1 2.4-0.1 • Features 2 +0.1 0.95-0.1

MMBT2907

Contextual Info: S A M S UN G SE MI CO ND UC TO R INC MMBT2907 IME 0 | 711.4142 000725? t | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage