MMBD914LT1 5D Search Results

marking 8b sot-23

Abstract: MMBD914LT1
Contextual Info: MOTOROLA Order this document by MMBD914LT1/D SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc

Contextual Info: SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA MMBD914LT1 HIGH-SPEED SWITCHING DIODE Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD914LT1 SOT-23 SWITCHING DIODES FEATURES Power Dissipation PD : 225 mW（Tamb=25℃） MARKING: 5D Maximum Ratings @TA=25 Parameter Symbol Peak Repetitive Peak reverse voltage

MMBD914LT1G

Contextual Info: MMBD914LT1 Preferred Device High−Speed Switching Diode Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit PD 225

MMBD914LT1G

Abstract: MMBD914LT1 5D MMBD914LT1 MMBD914LT3 MMBD914LT3G
Contextual Info: MMBD914LT1 Preferred Device High−Speed Switching Diode Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Symbol Value Unit Reverse Voltage Rating VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Peak Forward Surge Current

diode t 5d

Abstract: MAR SOT-23 SWITCHING DIODE 5D MMBD914LT1
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD914LT1 SWITCHING DIODE SOT-23 FEATURES Power dissipation 1. 0 mW Tamb=25℃ Forward Current 200 mA IF: Reverse Voltage 75 V VR: Operating and storage junction temperature range

MMBD914LT1G

Contextual Info: MMBD914LT1 Preferred Device High-Speed Switching Diode Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Symbol Value Unit Reverse Voltage Rating VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit PD 225

MMBD914LT1

Contextual Info: MMBD914LT1 Preferred Device High-Speed Switching Diode MAXIMUM RATINGS Rating Symbol Value Unit VR 100 Vdc Reverse Voltage Forward Current Peak Forward Surge Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit PD 225 mW http://onsemi.com 3 CATHODE 1 ANODE

transistor MPS5771

Abstract: BC237 bfw4
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit

marking B22 sot-23

Abstract: marking 44t
Contextual Info: MOTOROLA Order this document by MMBD914LT1/D SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode M M B D 914L T 1 Motorola Preferred Device 3 O CATHODE 14 O 1 ANODE MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage Vr 100 Vdc Forward Current if

MMBD914LT1G

Abstract: 5d sot 23 MMBD914LT1
Contextual Info: MMBD914LT1 Preferred Device High−Speed Switching Diode Features • Pb−Free Package May be Available. The G−Suffix Denotes a http://onsemi.com Pb−Free Lead Finish MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF

MMBD914LT1 5D

Abstract: MMBD914LT1G DIODE MARKING CODE A1 MMBD914LT1 MMBD914LT3 MMBD914LT3G 5d marking 5d sot23
Contextual Info: MMBD914LT1 Preferred Device High−Speed Switching Diode Features • Pb−Free Package is Available MAXIMUM RATINGS Symbol Value Unit Reverse Voltage Rating VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Peak Forward Surge Current 3 CATHODE 1

MMBD914LT1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 O CATHODE H O 1 ANODE Ah 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage Vr 100 Vdc Forward Current if 200 mAdc iFM surge 500 mAdc Symbol Max

SOT23s

Abstract: 23s Marking Code
Contextual Info: MMBD914LT1 Preferred Device High-Speed Switching Diode MAXIMUM RATINGS Rating Symbol Value Unit VR 100 Vdc Reverse Voltage Forward Current Peak Forward Surge Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit PD 225 mW http://onsemi.com 3 CATHODE 1 ANODE

G-192

Abstract: MMBD914LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. High-Speed Switching Diode MMBD914LT1 1 ANODE 3 CATHODE 3 1 2 MAXIMUM RATINGS Rating Reverse Voltage Forward Current Peak Forward Surge Current CASE 318–08, STYLE 8 Symbol VR IF I FM surge Value 100 200 500 Unit Vdc mAdc mAdc

MMBD914LT1

Abstract: MMBD914LT1 5D CD75
Contextual Info: Transys Electronics L I M I T E D SOT-23 Plastic-Encapsulated Diodes MMBD914LT1 SWITCHING DIODE SOT-23 FEATURES Power dissipation 1. 0 mW Tamb=25℃ Forward Current 200 mA IF: Reverse Voltage 75 V VR: Operating and storage junction temperature range 0. 95

Contextual Info: High-Speed Switching Diode MMBD914LT1 1 ANODE 3 CATHODE 3 1 2 MAXIMUM RATINGS Rating Reverse Voltage Forward Current Peak Forward Surge Current CASE 318–08, STYLE 8 Symbol VR IF I FM surge Value 100 200 500 Unit Vdc mAdc mAdc Symbol PD Max 225 Unit mW R θ JA

Contextual Info: MOTOROLA Order this document by MMBD914LT1/D SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode 3 O 14 CATHODE o 1 ANODE MAXIMUM RATINGS Rating Symbol Value Unit Vr 100 Vdc if 200 mAdc iFM surge 500 mAdc Symbol Max Unit PD 225 mW 1.8 mW /°C R0JA 556

5D SOT23-3

Abstract: MMBD914LT1 MARKING 5D
Contextual Info: MMBD914LT1 SWITCHING DIODE Features Power dissipation 。 P D : 225 mW Tamb=25 C Pluse Drain I F : 150 mA Reverse Voltage V R : 75V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE 2.EMITTER 3.COLLECTOR

MMBD914LT1

Contextual Info: MMBD914LT1 SWITCHING DIODE Features Power dissipation 。 P D : 225 mW Tamb=25 C Pluse Drain I F : 150 mA Reverse Voltage V R : 75V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE 2.EMITTER 3.COLLECTOR

bd914lt

Abstract: bd914
Contextual Info: MMBD914LT1* M A XIM U M RATINGS Rating Symbol Unit V alue R everse V oltage Vr 70 Vdc Forw ard Current if 200 m Adc iFM surae 500 m Adc Symbol Max Unit Pd 225 mW 1.8 mW/°C R « JA 556 °C/W Pd 300 mW 2.4 mW/°C r öJ A 417 x/w TJ. T Stfl - 55 to + 1 5 0

Contextual Info: MMBD914LT1* MAXIM UM RATINGS Rating Symbol Value Unit R e ve rse V o lta g e Vr 70 V dc F o rw a rd C u rre n t if 2 00 m Adc iF M su rq e 500 m Adc Symbol M ax Unit Pd 225 mW 1.8 m W 'cC R# j a 556 -C 'W pd 300 mW 2.4 m W 'C RtfJA 417 T -W T J ' T stq

lg tv electronic board schematic

Abstract: MN37112FP c2538 MN3711OFP C3943 V-FBG-28 C2324 BLM21A601SPT LG CCD gerber file PAL 002a
Contextual Info: CRD7666-7C Analog/Digital Evaluation CCD Cameras Features Description l CCD Camera Processor Board l Includes CS7615 Analog Processor l Includes CS7666 Digital Processor l Includes CS4954 TV Encoder l 4:2:2 Component Digital Video l ITU-R BT.656 Compliant Transport

Contextual Info: MMBD914LT1G, SMMBD914LT1G, MMBD914LT3G, SMMBD914LT3G High-Speed Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  SOT−23 CASE 318 STYLE 8 Site and Control Change Requirements