MMAB Search Results

M1151

Contextual Info: M 11 5 - 8 networks P ro gra mmable Ma s t e r Cl ock Sy n t h e s i z e r DESCRIPTION FEATURES • mmable Output Frequency 819.2 -1000M H z No Software Required • 200kHz LSB Resolution • 2.5psec Typical Phase Jitter • 5ppm Typical Initial Accuracy

Contextual Info: networks M 11 5-3 P ro gra mmable Ma s t e r Cl ock Sy n t h e s i z e r DESCRIPTION FEATURES • mmable Output Frequency 115MHz - 1 75MHz No Software Required • 100kHz LSB Resolution • 2.5psec Typical Phase Jitter • 5ppm Typical Initial Accuracy

Contextual Info: networks M 11 5-4 P ro gra mmable Ma s t e r Cl ock Sy n t h e s i z e r DESCRIPTION FEATURES • mmable Output Frequency 175MHz -225M H z No Software Required • 100kHz LSB Resolution • 3.5psec Typical Phase Jitter • 5ppm Typical Initial Accuracy

Contextual Info: networks M1 1 5- 7 P ro gra mmable Ma s t e r Cl ock Sy n t h e s i z e r DESCRIPTION FEATURES • mmable Output Frequency 525MHz -819M H z No Software Required • 200kHz LSB Resolution • 2.5psec Typical Phase Jitter • 5ppm Typical Initial Accuracy

VR091B080TU

Contextual Info: DC/DC Converter DC/DC Converter mmable, Single Output, 1.1V - 1.85Vout @ 60A mmable, Single Output, 1.100V - 1.85V @ 80A Voltage Regulator Module VRM 9.1SS Model: VR091B080TU Features VRM9 9.1 Requ uirements s • Meetss VRM9.1 Requirements mmable Output V

pn sequence generator

Abstract: F802h ic top 246 yn LG 631 IC SDXC F804 HSP50216 ISL5216 ISL5216KI ISL5216KI-1
Contextual Info: [ /Title ISL52 /Subjec (FourChann Progra mmabl Digital Down Conver /Autho /Keyw ords (Intersi Corpor ation, semico nducto ISL5216 TM Data Sheet PRELIMINARY July 2001 File Number 6013.0 Four-Channel mmable Digital DownConverter Features The ISL5216 Quad mmable Digital DownConverter

XFATM6SA-CLxul

Abstract: XFATM6S
Contextual Info: S c h e m a tic : 1 .J E le c tr ic a l S p e c ific a tio n s: @25°C Isolation Voltage: 1500 Vrm s INPUT to OUTPUT Isolation Voltage: 500 Vrm s ( 6 + 7 + 8 - 1 + 2 + 3 ) TURNS RATIO: TX 1CT: 1 ±5% RX 1CT:1CT ±5% OCL: 350uH M inim um @ 100KHz 100m V BmADC

64REF

Contextual Info: 1. D im ensions: 2 . S ch em atic: o- o- 3. E lectrical Specs: D j -0 .3 8 R E F "7 DCL: 231 n H ± 2 % _! .020 DC R e s.: 2 .0 7 Q: 2 5 .0 Min SRF: 9 0 0 M H z @ 10 0M H z 0 .1 V O hm s 100M Hz Min Nd ìb 1. Solderabllity; Leads shall m eat M IL -B T D -2 0 2G .

Contextual Info: MLX90314 mmable Sensor Interface Features and Benefits • ■ ■ ■ ■ ■ Microprocessor-controlled signal conditioning for bridge-type sensors Suited for low-cost sensors: reduction of non-linearity by mmable coefficients External or internal temperature sensor for compensating temperature errors

D307

Contextual Info: Schem atic: -O 1 MX1- MX1- M X2- RJ45 -O 5 M X 3+ M X3- MX4- Electrical Specifications: @25"C Is o la tio n V o lta g e : Com m on 1 5 0 0 V rm s @ 60Hz 1 MlN Mode R e je c tio n : @ 1—50M Hz —3 0 d B Typ @ 5 0 - 130M Hz —20 d B Typ C ro s s ta lk : @ 1 -1 0 M H z - 4 0 d B

Contextual Info: V i sh ay Intertechnolo g y, Inc . I INNOVAT AND TEC O L OGY LTO 30, LTO 50, LTO 100 N HN POWER THICK FILM RESISTORS O 19 62-2012 Resistors - 30 W, 50 W, and 100 W at 25 °C 30 W, 50 W, and 100 W Thick Film Power Resistors Key Benefits • • • • •

EFB01

Abstract: ci 4093 equivalent 1172V EM 4093 72V841
Contextual Info: 3.3 VOLT DUAL CMOS SyncFlFO DUAL 256 x 9, DUAL 512 x 9, DUAL 1,024 x 9, DUAL 2,048 x 9, DUAL 4,096 x 9 FEATURES: • T h e IDT72V801 is e q u iva le n t to tw o IDT72V201 256 x 9 FIFO s • The IDT72V811 is equivalent to two IDT72V211 5 1 2 x 9 FIFOs • The IDT72V821 is equivalent to two IDT72V221 1,024 x 9 FIFOs

XF001

Abstract: 3W23
Contextual Info: 3. E le c tr ic a l 1. Dim ensions: S p ecificatio n s:@ 25°C Is o la tio n V o lta g e : • 0 .6 8 Max ■ 3 7 5 0 VAC D 0.100 Turns R atio: 1 - 2 - 3 : ( l 2 - 1 1 -1 0 )= 1 C T :2 .4 C T ± 2 % Turns R atio: ( 4 - 5 - 6 ) : ( 9 - 8 - 7 ) = 1 CT:1 CT±2%

MMAAP15K

Abstract: MMAAP22K MMAAP47K MMAAP68K MMAAS47K MMAAS68K MMABS22K MMABS33K MMABS47K MMABP3
Contextual Info: Type MMA Metallized Polyester Capacitors Oval Axial Leaded Capacitors for AC Applications Type MMA oval axial-leaded metallized polyester capacitors are designed for AC applications. It is constructed with a UL 94V-0 flame retardant outer wrap and has secure

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . ESD Protection Diode VCUT07B1-HD1 Bidirectional Symmetrical BiSy Single-Line ESD Protection Diode in Ultra-Compact LLP1006-2L Package KEY BENEFITS • Ultra-compact LLP1006-2L package –– Small footprint: 1.0 mm by 0.6 mm

TRANSISTOR SUBSTITUTION 1993

Abstract: DHO 165 DV 413 infineon catalog nfc antenna PCT 4111 B70B5 atx power supply 66b9
Contextual Info: P re li m i n a r y D a t a S h e e t , D S 1 , D e c . 2 0 0 0 IWORX Interworking Controller P X B 4 2 2 5 V er s i o n 1 . 1 w it h Fi r m w a r e R e l e a s e 1 . 1 -1 . 1 . 1 Datacom N e v e r s t o p t h i n k i n g . GLWLRQ  3XEOLVKHG E\ ,QILQHRQ 7HFKQRORJLHV $*

KA3846

Abstract: lem module ha
Contextual Info: KA3846 SMPS CONTROLLER CURRENT MODE PWM CONTROLLER The kA3846 control 1C provides all of the necessary features to imple­ ment fixed frequency, current mode control schemes while maintaining a minimum external parts count. The superior performance of this technique can be measured in Impr­

E5ex

Contextual Info: KM23C8100CET CMOS Mask ROM ELECTRONICS 8M-Bit 1 M X 8/512 K x 16 M-ROM(Extended Temperature Product) • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16(word mode) • Fast access time : 120ns(max.) • Supply voltage : single +5V • Current consumption

Contextual Info: KM23C8000C G CMOS Mask R O M ELECTRONICS 8M-BÏÏ (1M X8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 1,048,576x 8 bit organization • Fast access time :120ns(max.) • Supply voltage : single +5V • Current consumption Operating :60 mA(max.) Standby : 50 ¡Jf\ (max.)

Fast Ethernet

Abstract: 88E3018 88e3015 88e3018nnc1 Marvell PHY register map 88E3018 QFN-64 Marvell PHY 88E3018 layout 88E301 marvell rgmii layout CTRL25 BJT MARVELL 88
Contextual Info: 88E3015/88E3018 Integrated 10/100 Fast Ethernet Transceiver Doc. No. MV-S103657-00, Rev. D January 4, 2008 Document Classification: Proprietary Information Marvell. Moving Forward Faster 88E3015/88E3018 Integrated 10/100 Fast Ethernet Transceiver Document Status

RJE01

Abstract: ecn 1313
Contextual Info: E F REVISIONS SYM ZONE .9 5 0 [2 4 .1 4 ] fcJ3= = B=a ECN, ERN NO. A pjZzQ PROPOSAL APPRD. DATE 0 5 /1 1 /0 5 L.CHAN s a ßlI7p^ Amphenol V=n Ps=y Amphenol V=n .5 0 2 [1 2 .7 5 ] \J 6 1 \J 6 .3 0 0 [7 .6 2 ] FRONT VIEW -.4 7 5 .1 0 0 [2 .5 4 ] SIDE VIEW [1 2 .0 7 ]0.O 3 5Í.O O 2 [0O .89±O .O 5]

I23128

Abstract: 23128
Contextual Info: PANASONIC * ç u INDL/ELEK -CIO 12 D E i t,T32û5a 2 3 1 2 8 1 3 1 , 0 7 2 b : ' "y b N M O S 131,072-B it N M O S v 7 ^ 7 ' n y 7 v MN23128 ; i , 128K t • h -,16384x8 t M O S " 7 ?\ 'J ~f •o ÿ ÿ- 7 ~f - RO M f T - îfi « ; /; N -f-*■ t - y -t ‘Ia. 5V m - m v . f i s^ M f h '>. Àn^;:ï T T L =

Contextual Info: MLX90314 mmable Sensor Interface Features and Benefits • ■ ■ ■ ■ ■ Microprocessor-controlled signal conditioning for bridge-type sensors Suited for low-cost sensors: reduction of non-linearity by mmable coefficients External or internal temperature sensor for compensating temperature errors

Contextual Info: VIS VG36128401BT / VG36128801BT / VG36128161BT CMOS Synchronous Dynamic RAM Description The VG36128401B, VG36128801B and VG3664128161B are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4 and 2,097,152 x