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    MM3734 Search Results

    MM3734 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MM3734 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MM3734 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    MM3734 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MM3734 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MM3734 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    MM3734 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: MM3734 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)50 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500nØ @V(CBO) (V) (Test Condition)


    Original     		PDF MM3734 Freq400M

    B0813

    Abstract: PT9787 8C440 MJ3237 trw PT9787 MM4048 MJE42C MJ2841 MOTOROLA MM1758 mmt2857
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 NA31KY NA31MH NA31 MY SK3248 NA31KI NA31MI NA31KJ NA31MJ ~~~~g: 25 30 2NS204 S15-28 SMl5501 SMl550S SMl5511 SMl5901 SMl590S SMl5911 ~~~j~~ 35 40 80Y10 80Y10 PT9787 PT9787A 2N4431 2S022S 2S0226 SOT4301


    Original     		PDF 2SC109S 2NS714 92PU01 2S0180S MPSU01 NSOU01 92GU01 NA31KY B0813 PT9787 8C440 MJ3237 trw PT9787 MM4048 MJE42C MJ2841 MOTOROLA MM1758 mmt2857

    MTH13N50

    Abstract: MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50
    Text: STI Type: MJE8502A Notes: Polarity: NPN Power Dissipation: 80 VCEV: 1200 VCEO: 700 ICEV: 1200 ICEV A: 1.0 hFE: 7.5 hFE A: 1.0 VCE: 2.0 VBE: 1.5 IC: 2.5 COB: 300 fT: 5.0 Case Style: TO-220AB/TO-220: Industry Type: MJE8502A STI Type: MJF16010A Notes: Polarity:


    Original     		PDF MJE8502A O-220AB/TO-220: MJF16010A O-254 MJF16018 MJF16206 MTH13N50 MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50

    b0845

    Abstract: B0847 KT922V S01135 MM3724 KT922B SOt123 Package 2N444 2SC2238BO JE8550
    Text: RF POWER SILICON NPN Item Number Part Number I C 5 10 15 20 >= 30 Inti Device ToshibaCorp Inti Device ToshibaCorp ToshibaCorp ToshibaCorp Hitachi Ltd Matsushita Elec Trans Sanyo Elect ~~~~~~ ~anyo ~Iect B0226 B0228 B0230 B0230 B0230 2SC234 JE9113A JE9113B


    Original     		PDF IOC3298B 2SC3238B IOC2238B 2SC2238BO 2SC2238BY 2SC3298B 2SC1516K 2SC1913 2SC3902 b0845 B0847 KT922V S01135 MM3724 KT922B SOt123 Package 2N444 JE8550

    MM3735

    Abstract: 2N3734 2N3735 MM3734
    Text: MM3734 silicon MM3735 NPN S IL IC O N C O R E D R IV E R T R A N S IS T O R S NPN S IL IC O N A N N U L A R C O R E D R IV E R T R A N S IS T O R S . designed for use in core driver applications and high speed, high* current switching applications. • Collector-Em itter Breakdown Voltage B V c E O = 30 Vdc <Min> “ MM3734


    OCR Scan     		PDF MM3734 MM3735 MM3735 2N3734 2N3735 MM373S 2N3735 MM3734

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


    OCR Scan     		PDF 111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor

    2n3252

    Abstract: 2N5859 transistor 2N5859 2N3725 MOTOROLA 2n3736 2N3724 2N5845 2n3444 SILICON SMALL-SIGNAL DICE 2n5861
    Text: M O T O R O L A SC -CDIODES/OPTO} 6367255 34 MOTOROLA SC DE | b3t,7SSS □ □ B 7 T ö ci T f DIO DES/O PTO 34C D 37989 SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) 2C3724 DIE NO. — NPN LINE SOURCE — DSL27 D Ol This die provides performance similar to that of the following device types:


    OCR Scan     		PDF DSL27 2C3724 2N2410* 2N2476* 2N2537* 2N2538* 2N3252 2N3253 2N3444* 2N3724 2N5859 transistor 2N5859 2N3725 MOTOROLA 2n3736 2N5845 2n3444 SILICON SMALL-SIGNAL DICE 2n5861

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643