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    STMicroelectronics MK48Z02B-15

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    STMicroelectronics MK48Z18B-15

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    MK48Z18B-15 20
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    Thomson Components-Mostek Corp MK48Z02BU-25

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    STMicroelectronics MK48Z18B-20

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    STMicroelectronics MK48Z18B-10

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    MK48Z Datasheets (140)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MK48Z02 STMicroelectronics CMOS 2K x 8 XEROPOWER SRAM Scan PDF
    MK48Z02-12 Mostek 2K x 8 Zeropower RAM Original PDF
    MK48Z02-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    MK48Z02-15 Mostek 2K x 8 Zeropower RAM Original PDF
    MK48Z02-15 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    MK48Z02-20 Mostek 2K x 8 Zeropower RAM Original PDF
    MK48Z02-20 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    MK48Z02-25 Mostek 2K x 8 Zeropower RAM Original PDF
    MK48Z02-25 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    MK48Z02B-12 Mostek 2K x 8 Zeropower RAM Original PDF
    MK48Z02B12 STMicroelectronics CMOS 2K x 8 XEROPOWER SRAM Scan PDF
    MK48Z02B-12 STMicroelectronics CMOS 2K x 8 zeropower SRAM, 120ns Scan PDF
    MK48Z02B-15 Mostek 2K x 8 Zeropower RAM Original PDF
    MK48Z02B15 STMicroelectronics CMOS 2K x 8 XEROPOWER SRAM Scan PDF
    MK48Z02B-15 STMicroelectronics CMOS 2K x 8 zeropower SRAM, 150ns Scan PDF
    MK48Z02B-20 Mostek 2K x 8 Zeropower RAM Original PDF
    MK48Z02B20 STMicroelectronics CMOS 2K x 8 XEROPOWER SRAM Scan PDF
    MK48Z02B-20 STMicroelectronics CMOS 2K x 8 zeropower SRAM, 200ns Scan PDF
    MK48Z02B-25 Mostek 2K x 8 Zeropower RAM Original PDF
    MK48Z02B25 STMicroelectronics CMOS 2K x 8 XEROPOWER SRAM Scan PDF
    ...

    MK48Z Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    386SL intel

    Abstract: 386SL how to read Maxim date code DS1220 8086 with eprom BEST BIOS PROGRAMMING AND DATA FOR EEPROM APP540 practical applications of 8086 microprocessor DS1220 DS1225 DS1245
    Text: Maxim > App Notes > MEMORY Mar 29, 2001 Keywords: NVSRAM, DRAM, SRAM, EEPROM, shadow RAM, NV Memory, MK48Z08, MK48Z18, nvsrams, NV SRAMs APPLICATION NOTE 540 Using Nonvolatile Static RAMs Abstract: Vast resources have been spent by the semiconductor industry to build high-speed nonvolatile


    Original     		MK48Z08, MK48Z18, DS1225 DS1225s com/an540 AN540, APP540, Appnote540, 386SL intel 386SL how to read Maxim date code DS1220 8086 with eprom BEST BIOS PROGRAMMING AND DATA FOR EEPROM APP540 practical applications of 8086 microprocessor DS1220 DS1245 PDF

    MK48Z30

    Abstract: No abstract text available
    Text: S5E D • 7 ^ 2 3 7 003fl3flb T13 ■ SGS-THOMSON SGTH T - ^ - 2 L 3 “ / J MK48Z3Ö MK48Z30Y S G S- THOMSON CMOS 32K x 8 ZEROPOWER SRAM ■ INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE


    OCR Scan     		003fl3flb MK48Z3Ã MK48Z30Y MK48Z30 MK48Z30Y MK48Z30/30Y 71E1E37 MK48Z30, T-46-23-13 PDF

    IMS1630

    Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501
    Text: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68


    OCR Scan     		AM2147 AM2148/9 AM2167 AM2168 AM9126 AM99C68 AM99C88 AM99C89 AM67C4501 AM67C4502 IMS1630 HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501 PDF

    MKB6116

    Abstract: MKB4501 IMS1630 RAM MK6116 MK48Z18BU IMS1420 MK48Z02BU
    Text: SELECTION GUIDE ZEROPOW ERS ORGANISATION DESCRIPTION PART NUMBER ICCma SPEEDns ACTIVE TTL mA@ns STBY CMOS STBY VCC TEMP RANGE PACKAGE -2 K X 8 MK48Z02 120,150,200,250 90 3 1 5V + 10 -5% 0 to + 70°C P DIP 24 -2 K X 8 UL-CERTIFIED MK48Z02BU 120,150,200,250


    OCR Scan     		32KX8 MK48Z32 MK48Z30A MK48Z30 MK48Z19BU MK46Z19 MK48Z09BU MK48Z02 MK48Z02BU MK48Z12 MKB6116 MKB4501 IMS1630 RAM MK6116 MK48Z18BU IMS1420 PDF

    Zeropower ram MK48Z

    Abstract: 2kx8 2716 CMOS-440
    Text: r = J S G S T H O M S O MK48Z02/12 B -12/15/20/25 N 2K 8 ZEROPOWER RAM x • PREDICTED WORST CASE BATTERY LIFE OF 11 YEARS @ 70 °C ■ DATA RETENTION IN THE ABSENCE OF POWER ■ DATA SECURITY PROVIDED BY AUTOMATIC W RITE PROTECTION DURING POWER FAILURE


    OCR Scan     		MK48Z02/12 CMOS-440 24-PIN MK48Z02 MK48Z12 Zeropower ram MK48Z 2kx8 2716 PDF

    Untitled

    Abstract: No abstract text available
    Text: r z 7 SCS-THOMSON ^ 7# MK48Z32 MK48Z32Y CMOS 32K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ MINIMUM BATTERY BACK-UP OF 10 YEARS


    OCR Scan     		MK48Z32 MK48Z32Y MK48Z32Y 48Z32Y VA00607 MK48Z32/32Y. MK48Z32/32Y K48Z32, K48Z32Y PDF

    MK48Z09

    Abstract: No abstract text available
    Text: rz7 SGS-THOMSON HJtgïTGMOOS APPLICATION NOTE POWER FAIL INTERRUPT OF THE MK48Z09/19 A frequent dilemma faced by system designers is how to handle a power failure. Because power fail sensing components add real estate and cost to the system, some designers choose not to imple­


    OCR Scan     		MK48Z09/19 10jis 40jis MK48Z09/19, MK48Z09 PDF

    48z02

    Abstract: PHDIP24
    Text: r= Z SCS-THOMSON IM g^ [iL[i©YGM]0(gS MK48Z02 MK48Z12 CMOS 2K x 8 ZEROPOWER SRAM • PREDICTED WORST CASE BATTERY LIFE OF 11 YEARS @ 70°C ■ DATA RETENTION IN THE ABSENCE OF POWER ■ DATA SECURITY PROVIDED BY AUTOMATIC WRITE PROTECTION DURING POWER FAILURE


    OCR Scan     		MK48Z02 MK48Z12 24-PIN MK48Z12 DIP24 MK48Z02, 48z02 PHDIP24 PDF

    48z08

    Abstract: MK48Z08B-15 MK48Z18B-20 MK48Z08B10 mk48z0b DIP-28 MK48Z18B20 mk48z08b-10 MK48Z08 MK48Z08B20
    Text: MK48Z08/18/09/19 B -55/70/10/15/20 S G S -T H O M S O N • y 8 K X 8 ZEROPOWER SRAM FEATURES B ■ INTEGRATED ULTRA LOW POWER SRAM, POW ER-FAIL CO N TRO L CIRCUIT AND BAT­ TERY. DIP-28 (Plastic with BatteryTop Hat) ■ UNLIM ITED WRITE-CYCLES. ■ READ-CYCLE TIM E EQUALS W RITE-CYCLE


    OCR Scan     		MK48Z08/18/09/19 MK48Z08/09 MK48Z18/19 MK48ZXX-55 MK48ZXX-70 MK48ZXX-10 MK48ZXX-15 MK48ZXX-20 DIP-28 8Z09-B70 48z08 MK48Z08B-15 MK48Z18B-20 MK48Z08B10 mk48z0b DIP-28 MK48Z18B20 mk48z08b-10 MK48Z08 MK48Z08B20 PDF

    mk48z30

    Abstract: external RAM ic 6264 CI 6264 SRAM 6264 application note 6264 cmos ram STATIC RAM 6264 SRAM 6264 ic 6264 6264 SRAM
    Text: MK48Z30/30A B -10/12/15 f Z J SG S-IU O M SO N ^7# RfflD(g[S(Q)IILi in^®ROO©i 32 K X 8 ZEROPOWER RAM ADVANCE DATA • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. 1 ■ READ-CYCLE TIME EQUALS WRITE-CYCLE


    OCR Scan     		MK48Z30/30A MK48Z30A: 28-DIP MK48Z30-B10 MK48Z30-B12 MK48Z30-815 MK48Z30A-B10 MK48Z30A-B12 MK48Z30A-B15 mk48z30 external RAM ic 6264 CI 6264 SRAM 6264 application note 6264 cmos ram STATIC RAM 6264 SRAM 6264 ic 6264 6264 SRAM PDF

    Untitled

    Abstract: No abstract text available
    Text: rz rz SGS-THOMSON G«[f3 6 [ILiOT@«§ MK48Z02 MK48Z12 CMOS 2K x 8 ZEROPOWER SRAM • PREDICTED WORST CASE BATTERY LIFE OF 11 YEARS @ 70°C ■ DATA RETENTION IN THE ABSENCE OF POWER ■ DATA SECURITY PROVIDED BY AUTOMATIC WRITE PROTECTION DURING POWER FAILURE


    OCR Scan     		MK48Z02 MK48Z12 PHDIP24 24-PIN MK48Z02 MK48Z12 K48Z02, PHDIP24 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEE T> m 7l12c1237 DD36MD0 113 «SGTH SGS-THOMSON ¡5 MK48Z32 MK48Z32Y 6 S-THOflSON CMOS 32K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE


    OCR Scan     		7l12c MK48Z32 MK48Z32Y MK48Z32 MK48Z32Y K48Z32 K48Z32Y MK48Z32/32Y BB8llUiCT58@ MK48Z32, PDF

    T1A12

    Abstract: MK48Z09 M48Z09 M48Z19
    Text: M48Z09 M48Z19 /S T SGS-THOMSON ^7# [M ^©ILi©T0M[] g§ CMOS 8K x 8 ZEROPOWER SRAM • PIN and FUNCTION COMPATIBLE with the MK48Z09.19 ■ SELF CONTAINED BATTERY in the CAPHAT DIP PACKAGE ■ 11 YEARS of DATA RETENTION in the ABSENCE of POWER ■ CHOICE of TWO WRITE PROTECT


    OCR Scan     		MK48Z09 M48Z09: M48Z19: M48Z09 M48Z19 600mil A0-A12 T1A12 M48Z19 PDF

    Untitled

    Abstract: No abstract text available
    Text: M48Z08 M48Z18 / 3 T SGS-THOMSON * 7 /. IM niBIM ilUICTtBllKSg CMOS 8K x 8 ZEROPOWER SRAM • PIN and FUNCTION COMPATIBLE with the MK48Z08,18 ■ SELF CONTAINED BATTERY in the CAPHAT DIP PACKAGE ■ SMALL OUTLINE PACKAGE PROVIDES DI­ RECT CONNECTION for a SNAPHAT HOUS­


    OCR Scan     		M48Z08 M48Z18 MK48Z08 A0-A12 100ns PCOIP28 PDF

    3066

    Abstract: Zeropower ram MK48Z12
    Text: MK48Z02 MK48Z12 f Z T SGS-THOMSON ^ 7 # iK g i a iC T ^ © iD © s CMOS 2K x 8 ZEROPOWER SRAM » PREDICTED WORST CASE BATTERY LIFE OF 11 YEARS @ 70°C • DATA RETENTION IN THE ABSENCE OF POWER ■ DATA SECURITY PROVIDED BY AUTOMATIC WRITE PROTECTION DURING POWER


    OCR Scan     		MK48Z02 MK48Z12 24-PIN K48Z12 K48Z02 PHDIP24 K48Z02, 3066 Zeropower ram MK48Z12 PDF

    Zeropower ram MK48Z02

    Abstract: MK48Z02-12 R912
    Text: M48Z02 M48Z12 /= T SGS-THOMSON ^ 7 # ^D g[S(ô [l[Li ir^®RgO©S CMOS 2K x 8 ZEROPOWER SRAM • PIN and FUNCTION COMPATIBLE with the MK48Z02.12 ■ SELF CONTAINED BATTERY in the CAPHAT DIP PACKAGE ■ 11 YEARS of DATA RETENTION in the ABSENCE of POWER ■ CHOICE of TWO WRITE PROTECT


    OCR Scan     		M48Z02 M48Z12 MK48Z02 M48Z02: M48Z12: 600mil M48Z12 Zeropower ram MK48Z02 MK48Z02-12 R912 PDF

    mk48z02

    Abstract: No abstract text available
    Text: rrz SGS THOMSON LËOÏÏlRMflÛS APPLICATION NOTE PROGRAMMING THE MK48Z02 The MK48Z02 serves many varied applications. It provides the ease of access for both reads and writes that conventional RAMs offer, as well as nonvolatile memory that is associated with read


    OCR Scan     		MK48Z02 MK48Z02 AN207/0291 AN207 PDF

    MK48Z32

    Abstract: No abstract text available
    Text: MK48Z32 32A B -10/12/15 { Z T SGS-THOMSON 32 K X 8 ZEROPOWER RAM ADVANCE DATA FEATURES • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ PR ED IC TED BATTERY BACK-U P OF 10


    OCR Scan     		MK48Z32 MK48Z30A: MK48Z32/ MK48Z32A MK48Z32A PDF

    Untitled

    Abstract: No abstract text available
    Text: M48Z08 M48Z18 / = T SGS-THOMSON 7 # ^ [ *[ E i[ L [ I M ( Q M ( g S CMOS 8K x 8 ZEROPOWER SRAM • PIN and FUNCTION COMPATIBLE with the MK48Z08.18 ■ SELF CONTAINED BATTERY in the CAPHAT DIP PACKAGE ■ SMALL OUTLINE PACKAGE PROVIDES DI­ RECT CONNECTION for a SNAPHAT HOUS­


    OCR Scan     		M48Z08 M48Z18 MK48Z08 A0-A12 100ns PCDIP28 PDF

    48z02

    Abstract: MK48Z02 VA00603 Zeropower ram MK48Z02 MK48Z12 Zeropower ram MK48Z12 PHDIP24 MK4BZ
    Text: 52E D • 71 212 37 0036341= 337 MSGTH T - ¥ ^ ~ Z 3 ^ / 2 - SGS-THOMSON MK48Z02 KLKSIMKS_ MK48Z12 S 6 S-THOMSON CMOS 2K x 8 ZEROPOWER SRAM ■ PREDICTED WORST CASE BATTERY LIFE OF 11 YEARS @ 70°C ■ DATA RETENTION IN THE ABSENCE OF POWER - DATA SECURITY PROVIDED BY AUTOMATIC


    OCR Scan     		MK48Z02 MK48Z12 CMOS-440mW 24-PIN MK48Z02 MK48Z12 MK48Z02/12 384-bit, 003635b 48z02 VA00603 Zeropower ram MK48Z02 Zeropower ram MK48Z12 PHDIP24 MK4BZ PDF

    Untitled

    Abstract: No abstract text available
    Text: 7^5*1537 0056055 q MK48Z30/30A B -10/12/15 S G S -T H O M S O N 5 7 . M S 6 S-THOMSON 30 E D 32 K X 8 ZEROPOWER RAM ADVANCE DATA i IN T E G R A T E D U LT R A L O W P O W E R S R A M , P O W E R -F A IL C O N T R O L C IR C U IT A N D BAT­ TER Y. i U N L IM IT E D W R IT E -C Y C L E S .


    OCR Scan     		MK48Z30/30A PDF

    Untitled

    Abstract: No abstract text available
    Text: MK48Z30 MK48Z30Y SGS-THOMSON mo CMOS 32K x 8 ZEROPOWER SRAM • INTEGRATED ULTtiA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ MINIMUM BATTERY BACK-UP OF 10 YEARS @ 25’C.


    OCR Scan     		MK48Z30 MK48Z30Y MK48Z30 MK48Z30Y-4 MK48Z30/30Y. MK48Z30/30Y K48Z30, PDF

    Zeropower ram MK48Z

    Abstract: MK48Z08B-20 MK48Z08B-25 mk48z08 MK48Z09B-20 TA-306 MK48Z18B-20 jis h 8502 MK48Z18 MK48Z09B-25
    Text: COMPONENTS 8K 8 ZEROPO W ER RAM MOSTEK MEMORY COM PONENTS □ Predicted Worst Case Battery Life of 11 years @ 70°C NC 1 c □ 28 < o o FEATURES A ,2 2 C n 27 w □ 26 NC \ O 4 O □ 25 Aa A5 5 □ □ 24 A„ A4 6 C □ 23 A„ G □ Data retention in th e absence of pow er


    OCR Scan     		MK48Z08/18/09/19 MK48Z09/19) MK48Z08/09) MK48Z08/09: MK48Z18/19: MK48Z08B-25 MK48Z08ein Zeropower ram MK48Z MK48Z08B-20 mk48z08 MK48Z09B-20 TA-306 MK48Z18B-20 jis h 8502 MK48Z18 MK48Z09B-25 PDF

    CY6116

    Abstract: HM6116 MK48Z02 DS1220Y-200 DALLAS 24PIN CY7C128-45 CY7C128-55 CY7C128A-15 CY7C128A-20 CY7C128A-25
    Text: - 16 K 'f X m % it £t ¿&&ÍEH OC TAAC aax ns) TCAC (us) nMOS S t a t i c RAM (2 0 4 8 x 8 ) f iî TOE max (ns) TOH min (ns) TOD max (ns) TWP «in (ns) TDS •in (ns) M « TDH min (ns) TWD min (ns) TWR max (ns) V D D or V C C (V) 24PIN IDD aax (ibA) A I DD STANDBY


    OCR Scan     		24PIN Am9128-15 Aa9128-20 M116ALP/ALSP-12 HMB116ALP/ALSP-15 HM6116ALP/ALSP-20 HM6116AP-10 HM6116AP/ASP-12 HM6116AP/ASP-1S HM6116AP/ASP-20 CY6116 HM6116 MK48Z02 DS1220Y-200 DALLAS CY7C128-45 CY7C128-55 CY7C128A-15 CY7C128A-20 CY7C128A-25 PDF