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    MJE13009 EQUIVALENT Search Results

    MJE13009 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    MJE13009 EQUIVALENT Datasheets Context Search

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    mje13009-2

    Abstract: Bipolar Junction NPN Transistor 2N2222 Inverter AN-767 MJE13009-D 2N2222 transistor SOA 2N2905 MOTOROLA mje13009 equivalent 2N2222 NPN Transistor features motorola AN719 2N2222 transistor to drive a relay
    Text: MOTOROLA Order this document by MJE13009/D SEMICONDUCTOR TECHNICAL DATA MJE13009* Designer's  Data Sheet *Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive


    Original     		PDF MJE13009/D* MJE13009/D mje13009-2 Bipolar Junction NPN Transistor 2N2222 Inverter AN-767 MJE13009-D 2N2222 transistor SOA 2N2905 MOTOROLA mje13009 equivalent 2N2222 NPN Transistor features motorola AN719 2N2222 transistor to drive a relay

    mje13009-2

    Abstract: mje13009 equivalent 1N4933 1N5820 2N2222 2N2905 MJE13009 MJE200 MJE210 MR826
    Text: MOTOROLA Order this document by MJE13009/D SEMICONDUCTOR TECHNICAL DATA MJE13009*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive


    Original     		PDF MJE13009/D* MJE13009/D mje13009-2 mje13009 equivalent 1N4933 1N5820 2N2222 2N2905 MJE13009 MJE200 MJE210 MR826

    1N4933

    Abstract: 1N5820 2N2222 2N2905 MJE13009 MJE200 MJE210 MR826 2N2905 MOTOROLA mje13009-2
    Text: MOTOROLA Order this document by MJE13009/D SEMICONDUCTOR TECHNICAL DATA MJE13009*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive


    Original     		PDF MJE13009/D* MJE13009/D 1N4933 1N5820 2N2222 2N2905 MJE13009 MJE200 MJE210 MR826 2N2905 MOTOROLA mje13009-2

    mje13009l

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They


    Original     		PDF MJE13009 MJE13009 QW-R214-011 mje13009l

    mje13009 equivalent

    Abstract: MJE13009g 1N4933 1N5820 2N2222 2N2905 MJE13009 MJE200 MJE210 AN719
    Text: MJE13009 Preferred Device SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications


    Original     		PDF MJE13009 MJE13009 MJE13009/D mje13009 equivalent MJE13009g 1N4933 1N5820 2N2222 2N2905 MJE200 MJE210 AN719

    mje13009 equivalent

    Abstract: 2N2222 SOA mje13009l MJE13009L-T3P-T QW-R214-011 2n2222 transistor pin b c e 3V to 350V dc dc converter MJE13009-T3P-T 2N2222 transistor output curve free transistor and ic equivalent data
    Text: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They


    Original     		PDF MJE13009 MJE13009 MJE13009L QW-R214-011 mje13009 equivalent 2N2222 SOA mje13009l MJE13009L-T3P-T 2n2222 transistor pin b c e 3V to 350V dc dc converter MJE13009-T3P-T 2N2222 transistor output curve free transistor and ic equivalent data

    mje13009 equivalent

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They


    Original     		PDF MJE13009 MJE13009 O-220F QW-R219-007 mje13009 equivalent

    mje13009 equivalent

    Abstract: mje13009L 2N2222 NPN Transistor features MJE13009 MJE13 MJE130 MJE13009L-T3P-T high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz 2n2222 transistor pin b c e MJE13009-T3P-T
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are


    Original     		PDF MJE13009 MJE13009 MJE13009L QW-R203-024 mje13009 equivalent mje13009L 2N2222 NPN Transistor features MJE13 MJE130 MJE13009L-T3P-T high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz 2n2222 transistor pin b c e MJE13009-T3P-T

    MJE13009L

    Abstract: mje13009 equivalent MJE13009-T3P-T 2n2905 time delay relay jc 5010 transistor 1N4933 MJE13009 MJE13009L-T3P-T MJE13009-TA3-T MJE13009-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS 1 TO-3P DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are


    Original     		PDF MJE13009 MJE13009 O-220 O-220F QW-R203-024 MJE13009L mje13009 equivalent MJE13009-T3P-T 2n2905 time delay relay jc 5010 transistor 1N4933 MJE13009L-T3P-T MJE13009-TA3-T MJE13009-TF3-T

    bd139 3v

    Abstract: transistor bc 647 50W AMP 2SD718 2SB688 BD679 coil 2N6122 transistor TRANSISTOR REPLACEMENT GUIDE TIP41 TRANSISTOR REPLACEMENT 2N5684 circuit diagrams BD138 coil 724 motorola NPN Transistor with heat pad
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13009*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V


    Original     		PDF MJE13009* MJE13009 SILI32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B bd139 3v transistor bc 647 50W AMP 2SD718 2SB688 BD679 coil 2N6122 transistor TRANSISTOR REPLACEMENT GUIDE TIP41 TRANSISTOR REPLACEMENT 2N5684 circuit diagrams BD138 coil 724 motorola NPN Transistor with heat pad

    mje13009 equivalent

    Abstract: 2N2222 transistor output curve 2N2222 transistor to drive a relay on semiconductor AN719
    Text: ON Semiconductor SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications


    Original     		PDF MJE13009 MJE13009 AN-222: mje13009 equivalent 2N2222 transistor output curve 2N2222 transistor to drive a relay on semiconductor AN719

    mje13009 equivalent

    Abstract: MJE13009 1N4933 1N5820 2N2222 2N2905 MJE200 MJE210 MR826
    Text: ON Semiconductor SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications


    Original     		PDF MJE13009 MJE13009 r14525 MJE13009/D mje13009 equivalent 1N4933 1N5820 2N2222 2N2905 MJE200 MJE210 MR826

    AN-719

    Abstract: mje13009 equivalent 1N4933 1N5820 2N2222 2N2905 MJE13009 MJE200 MJE210 MR826
    Text: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications


    Original     		PDF MJE13009 MJE13009 r14525 MJE13009/D AN-719 mje13009 equivalent 1N4933 1N5820 2N2222 2N2905 MJE200 MJE210 MR826

    BU4508DX equivalent

    Abstract: ST1803DHI equivalent ST2001HI equivalent BU4508DX 2SC5296 equivalent BU508DF equivalent equivalent BU2725DX bu208a toshiba 2sc5326 2SC5302 equivalent
    Text: Philips Semiconductors Power Bipolar Transistors Cross reference list ”PHILIPS TYPE” REFERS TO CLOSEST PHILIPS ALTERNATIVE OR DIRECT EQUIVALENT IF AVAILABLE. Always consider the application and compare data specifications before recommending suitable Philips type


    Original     		PDF 2SC4589 BU4525AF 2SC4692 BU4530AL 2SC4742 BU2508DW 2SC4743 BU4508AX 2SC4744 BU4508DF BU4508DX equivalent ST1803DHI equivalent ST2001HI equivalent BU4508DX 2SC5296 equivalent BU508DF equivalent equivalent BU2725DX bu208a toshiba 2sc5326 2SC5302 equivalent

    Untitled

    Abstract: No abstract text available
    Text: MJE13009G SWITCHMODE Series NPN Silicon Power Transistors The MJE13009G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls,


    Original     		PDF MJE13009G MJE13009G MJE13009/D

    MJE13009g

    Abstract: AN-719 mje13009 equivalent 1N4933 1N5820 2N2222 2N2905 MJE200 MJE210 MR826
    Text: MJE13009G SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls,


    Original     		PDF MJE13009G MJE13009G MJE13009/D AN-719 mje13009 equivalent 1N4933 1N5820 2N2222 2N2905 MJE200 MJE210 MR826

    MJE13009G

    Abstract: 2N2222 NPN Transistor features 1N4933 1N5820 2N2222 2N2905 MJE200 MJE210 MR826 AN719
    Text: MJE13009G SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls,


    Original     		PDF MJE13009G MJE13009G MJE13009/D 2N2222 NPN Transistor features 1N4933 1N5820 2N2222 2N2905 MJE200 MJE210 MR826 AN719

    MJ3001 equivalent

    Abstract: MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ2955 See 2N3055 MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501* • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc


    Original     		PDF MJ2955 2N3055) MJ2955A 2N3055A) MJ2500 MJ2501* MJ3000 MJ3001* TIP73B TIP74 MJ3001 equivalent MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement

    motorola MJ15001

    Abstract: BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Transistors NPN MJ15001 PNP MJ15002 The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —


    Original     		PDF MJ15001 MJ15002 MJ15002 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A motorola MJ15001 BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139

    TIP142 TRANSISTOR REPLACEMENT

    Abstract: replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V


    Original     		PDF TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 TIP73B TIP74 TIP74A TIP74B TIP142 TRANSISTOR REPLACEMENT replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142

    2SC105

    Abstract: 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4921 thru 2N4923* Medium-Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE sat = 0.6 Vdc (Max) @ IC = 1.0 Amp


    Original     		PDF 2N4918, 2N4919, 2N4920 2N4921 2N4923* TIP73B TIP74 TIP74A TIP74B TIP75 2SC105 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent

    All similar transistor 2sa715

    Abstract: 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD243B BD243C* PNP BD244B BD244C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc


    Original     		PDF BD243B, BD244B BD243C, BD244C BD243B BD243C* BD244C* TIP73B TIP74 All similar transistor 2sa715 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference

    mje13009 equivalent

    Abstract: MJEI3008 BUV46 equivalent buu26 ST MJE13007 mje13007 equivalent
    Text: Power Management Division Power Management Division bipolar pow er transistors Sem ela b continually strives to offer improved specification bipolar transistors. One example the B U L 74 A MJE13 009 equivalent , is aimed at the power supply/lighting market. I t ’s ideal


    OCR Scan     		PDF BUL74A MJE13009 BUL36I T022SGO T0220 BUV46 MJE13004 BUL53A mje13009 equivalent MJEI3008 BUV46 equivalent buu26 ST MJE13007 mje13007 equivalent

    e13009

    Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and


    OCR Scan     		PDF MJE13005* e13009 E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data