MJE13009 CIRCUIT Search Results

MJE13009 CIRCUIT Result Highlights (5)

Part	Manufacturer	Description
TLP2701	Toshiba Electronic Devices & Storage Corporation	Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L
74HC4053FT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
74HC4051FT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
TCKE800NA	Toshiba Electronic Devices & Storage Corporation	eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B
TCKE800NL	Toshiba Electronic Devices & Storage Corporation	eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B

MJE13009 CIRCUIT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
mje13009-2 Abstract: Bipolar Junction NPN Transistor 2N2222 Inverter AN-767 MJE13009-D 2N2222 transistor SOA 2N2905 MOTOROLA mje13009 equivalent 2N2222 NPN Transistor features motorola AN719 2N2222 transistor to drive a relay Text: MOTOROLA Order this document by MJE13009/D SEMICONDUCTOR TECHNICAL DATA MJE13009* Designer's  Data Sheet *Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive	Original	PDF	MJE13009/D* MJE13009/D mje13009-2 Bipolar Junction NPN Transistor 2N2222 Inverter AN-767 MJE13009-D 2N2222 transistor SOA 2N2905 MOTOROLA mje13009 equivalent 2N2222 NPN Transistor features motorola AN719 2N2222 transistor to drive a relay
mje13009-2 Abstract: mje13009 equivalent 1N4933 1N5820 2N2222 2N2905 MJE13009 MJE200 MJE210 MR826 Text: MOTOROLA Order this document by MJE13009/D SEMICONDUCTOR TECHNICAL DATA MJE13009*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive	Original	PDF	MJE13009/D* MJE13009/D mje13009-2 mje13009 equivalent 1N4933 1N5820 2N2222 2N2905 MJE13009 MJE200 MJE210 MR826
1N4933 Abstract: 1N5820 2N2222 2N2905 MJE13009 MJE200 MJE210 MR826 2N2905 MOTOROLA mje13009-2 Text: MOTOROLA Order this document by MJE13009/D SEMICONDUCTOR TECHNICAL DATA MJE13009*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive	Original	PDF	MJE13009/D* MJE13009/D 1N4933 1N5820 2N2222 2N2905 MJE13009 MJE200 MJE210 MR826 2N2905 MOTOROLA mje13009-2
mje13009l Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They	Original	PDF	MJE13009 MJE13009 QW-R214-011 mje13009l
mje13009 equivalent Abstract: MJE13009g 1N4933 1N5820 2N2222 2N2905 MJE13009 MJE200 MJE210 AN719 Text: MJE13009 Preferred Device SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications	Original	PDF	MJE13009 MJE13009 MJE13009/D mje13009 equivalent MJE13009g 1N4933 1N5820 2N2222 2N2905 MJE200 MJE210 AN719
mje13009 equivalent Abstract: 2N2222 SOA mje13009l MJE13009L-T3P-T QW-R214-011 2n2222 transistor pin b c e 3V to 350V dc dc converter MJE13009-T3P-T 2N2222 transistor output curve free transistor and ic equivalent data Text: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They	Original	PDF	MJE13009 MJE13009 MJE13009L QW-R214-011 mje13009 equivalent 2N2222 SOA mje13009l MJE13009L-T3P-T 2n2222 transistor pin b c e 3V to 350V dc dc converter MJE13009-T3P-T 2N2222 transistor output curve free transistor and ic equivalent data
mje13009 equivalent Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They	Original	PDF	MJE13009 MJE13009 O-220F QW-R219-007 mje13009 equivalent
mje13009 equivalent Abstract: mje13009L 2N2222 NPN Transistor features MJE13009 MJE13 MJE130 MJE13009L-T3P-T high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz 2n2222 transistor pin b c e MJE13009-T3P-T Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are	Original	PDF	MJE13009 MJE13009 MJE13009L QW-R203-024 mje13009 equivalent mje13009L 2N2222 NPN Transistor features MJE13 MJE130 MJE13009L-T3P-T high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz 2n2222 transistor pin b c e MJE13009-T3P-T
MJE13009L Abstract: mje13009 equivalent MJE13009-T3P-T 2n2905 time delay relay jc 5010 transistor 1N4933 MJE13009 MJE13009L-T3P-T MJE13009-TA3-T MJE13009-TF3-T Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS 1 TO-3P DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are	Original	PDF	MJE13009 MJE13009 O-220 O-220F QW-R203-024 MJE13009L mje13009 equivalent MJE13009-T3P-T 2n2905 time delay relay jc 5010 transistor 1N4933 MJE13009L-T3P-T MJE13009-TA3-T MJE13009-TF3-T
MJE13009 Abstract: MJE-13009 Text: MJE13009 SILICON NPN SWITCHING TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec TO-220 plastic package, intended for use in motor controls, switching regulators, deflection circuits, etc.	Original	PDF	MJE13009 MJE13009 O-220 O-220 MJE-13009
mje13009 equivalent Abstract: MJE13009 MJE13 Text: MJE13009  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW BASE-DRIVE REQUIREMENTS DESCRIPTION The MJE13009 is a Multiepitaxial Mesa NPN transistor mounted in Jedec TO-220 plastic	Original	PDF	MJE13009 MJE13009 O-220 O-220 mje13009 equivalent MJE13
bd139 3v Abstract: transistor bc 647 50W AMP 2SD718 2SB688 BD679 coil 2N6122 transistor TRANSISTOR REPLACEMENT GUIDE TIP41 TRANSISTOR REPLACEMENT 2N5684 circuit diagrams BD138 coil 724 motorola NPN Transistor with heat pad Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13009*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V	Original	PDF	MJE13009* MJE13009 SILI32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B bd139 3v transistor bc 647 50W AMP 2SD718 2SB688 BD679 coil 2N6122 transistor TRANSISTOR REPLACEMENT GUIDE TIP41 TRANSISTOR REPLACEMENT 2N5684 circuit diagrams BD138 coil 724 motorola NPN Transistor with heat pad
MJE13009 Abstract: 2N2222 transistor output curve mje13009l mje13009 CIRCUIT 2N2222 SOA MJE13009G tr 2n2222 MJE13009L-TF3-T Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such	Original	PDF	MJE13009 MJE13009 QW-R203-024 2N2222 transistor output curve mje13009l mje13009 CIRCUIT 2N2222 SOA MJE13009G tr 2n2222 MJE13009L-TF3-T
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications	Original	PDF	MJE13009-P MJE13009-P QW-R223-008,

mje13008 Abstract: MJE-13008 MJE13009 SGS-Thomson Text: MJE13008 MJE13009 SILICON NPN SWITCHING TRANSISTORS n MJE13008 IS SGS-THOMSON PREFERRED SALESTYPE. DESCRIPTION The MJE13008 and MJE13009 are multiepitaxial mesa NPN transistor. They are mounted in Jedec TO-220 plastic package, intended for use in motor controls, switching regulators deflection	Original	PDF	MJE13008 MJE13009 MJE13008 MJE13009 O-220 O-220 MJE-13008 SGS-Thomson
mje13009 equivalent Abstract: 2N2222 transistor output curve 2N2222 transistor to drive a relay on semiconductor AN719 Text: ON Semiconductor SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications	Original	PDF	MJE13009 MJE13009 AN-222: mje13009 equivalent 2N2222 transistor output curve 2N2222 transistor to drive a relay on semiconductor AN719
C2026 Abstract: transistor 400V 8A transistor 400v 8a to220 Text: UTC MJE13009 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFICATION APPLICAION * Silicon NPN triple diffused MESA type electronic transformers power switching circuit 1 TO-220 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Tc=25°C, unless otherwise noted	Original	PDF	MJE13009 O-220 QW-R203-024 C2026 transistor 400V 8A transistor 400v 8a to220
Untitled Abstract: No abstract text available Text: UTC MJE13009 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFICATION APPLICAION * Silicon NPN triple diffused MESA type electronic transformers power switching circuit 1 TO-220 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Tc=25°C, unless otherwise noted	Original	PDF	MJE13009 O-220 QW-R203-024
Untitled Abstract: No abstract text available Text: UTC MJE13009 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFICATION APPLICAION * Silicon NPN triple diffused MESA type electronic transformers power switching circuit 1 TO-220 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Tc=25°C, unless otherwise noted	Original	PDF	MJE13009 O-220 QW-R203-024
mje13009 equivalent Abstract: MJE13009 1N4933 1N5820 2N2222 2N2905 MJE200 MJE210 MR826 Text: ON Semiconductor SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications	Original	PDF	MJE13009 MJE13009 r14525 MJE13009/D mje13009 equivalent 1N4933 1N5820 2N2222 2N2905 MJE200 MJE210 MR826
AN-719 Abstract: mje13009 equivalent 1N4933 1N5820 2N2222 2N2905 MJE13009 MJE200 MJE210 MR826 Text: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications	Original	PDF	MJE13009 MJE13009 r14525 MJE13009/D AN-719 mje13009 equivalent 1N4933 1N5820 2N2222 2N2905 MJE200 MJE210 MR826
MJE13009 Abstract: MJE-13009 mje13009 equivalent Text: SavantIC Semiconductor Product Specification MJE13009 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/	Original	PDF	MJE13009 O-220C MJE13009 MJE-13009 mje13009 equivalent
mje13009 Abstract: MJE-13009 mje13009 equivalent Text: SavantIC Semiconductor Product Specification MJE13009 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/	Original	PDF	MJE13009 mje13009 MJE-13009 mje13009 equivalent
JE13009 Abstract: No abstract text available Text: MOTOROLA Order this document by MJE13009/D SEMICONDUCTOR TECHNICAL DATA M JE13009* D esigner’s Data Sheet ‘ Motorola Preferred Device S W IT C H M O D E S e rie s N PN S ilic o n P o w e r T ra n s is to rs The MJE13009 is designed for high-voltage, high-speed power switching inductive	OCR Scan	PDF	MJE13009/D JE13009* MJE13009 21A-06 O-220AB JE13009

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MJE13009 CIRCUIT Search Results

MJE13009 CIRCUIT Result Highlights (5)

MJE13009 CIRCUIT Datasheets Context Search

mje13009-2

mje13009-2

1N4933

mje13009l

mje13009 equivalent

mje13009 equivalent

mje13009 equivalent

mje13009 equivalent

MJE13009L

MJE13009

mje13009 equivalent

bd139 3v

MJE13009

Untitled

mje13008

mje13009 equivalent

C2026

Untitled

Untitled

mje13009 equivalent

AN-719

MJE13009

mje13009

JE13009