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    MJE13003 ON Search Results

    MJE13003 ON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AV-THLIN2BNCM-025 Amphenol Cables on Demand Amphenol AV-THLIN2BNCM-025 Thin-line Coaxial Cable - BNC Male / BNC Male (SDI Compatible) 25ft Datasheet
    CN-DSUB50PIN0-000 Amphenol Cables on Demand Amphenol CN-DSUB50PIN0-000 D-Subminiature (DB50 Male D-Sub) Connector, 50-Position Pin Contacts, Solder-Cup Terminals Datasheet
    CN-DSUBHD62PN-000 Amphenol Cables on Demand Amphenol CN-DSUBHD62PN-000 High-Density D-Subminiature (HD62 Male D-Sub) Connector, 62-Position Pin Contacts, Solder-Cup Terminals Datasheet
    CO-058BNCX200-003 Amphenol Cables on Demand Amphenol CO-058BNCX200-003 BNC Male to BNC Male (RG58) 50 Ohm Coaxial Cable Assembly 3ft Datasheet
    CO-058BNCX200-050 Amphenol Cables on Demand Amphenol CO-058BNCX200-050 BNC Male to BNC Male (RG58) 50 Ohm Coaxial Cable Assembly 50ft Datasheet

    MJE13003 ON Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		MJE13003-E MJE13003-E MJE13003L-E-x-T6S-K QW-R223-009 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		MJE13003-E MJE13003-E MJE13003L-E-x-T6S-K MJE13003G-E-x-T6S-K QW-R223-009 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


    Original     		MJE13003-E MJE13003-E MJE13003L-E-x-T6S-at QW-R223-009 PDF

    transistor 2n222

    Abstract: MJE13002 equivalent mje13003 equivalent 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND MJE13002D MJE13002 MJE13003 1N4933 2N2905 MJE210
    Text: ON Semiconductort MJE13002 * MJE13003 * SWITCHMODEt Series NPN Silicon Power Transistors *ON Semiconductor Preferred Device 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS These devices are designed for high–voltage, high–speed power


    Original     		MJE13002 MJE13003 r14525 MJE13002/D transistor 2n222 MJE13002 equivalent mje13003 equivalent 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND MJE13002D MJE13002 MJE13003 1N4933 2N2905 MJE210 PDF

    mje13003 equivalent

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 QW-R201-062 mje13003 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 QW-R201-062 PDF

    2N2222 transistor output curve

    Abstract: UTCMJE13003 MJE13003 transistor
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 O-220 QW-R203-017 2N2222 transistor output curve UTCMJE13003 MJE13003 transistor PDF

    MJE13002

    Abstract: mje13003 MJE-13002 MJE13002 transistor MJE13002MJE13003
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS MJE13002 MJE13003 TO-126 Plastic Package Suitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers and Deflection Circuits


    Original     		ISO/TS16949 MJE13002 MJE13003 O-126 C-120 MJE13002 13003Rev090502 mje13003 MJE-13002 MJE13002 transistor MJE13002MJE13003 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 O-220 QW-R203-017 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 QW-R201-062 PDF

    equivalent transistor 2N2905

    Abstract: UTCMJE13003 MJE13003 TO-92 mje13003 equivalent tti relay Ferroxcube core
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 QW-R201-062 equivalent transistor 2N2905 UTCMJE13003 MJE13003 TO-92 mje13003 equivalent tti relay Ferroxcube core PDF

    mje13003

    Abstract: MJE-13003 mje13002 npn transistors 700V 1A equivalent mje13003 MJE-13002 of mje13003
    Text: MJE13002 / MJE13003 NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching


    Original     		MJE13002 MJE13003 100oC 100oC O-126 25Adc 25Adc, mje13003 MJE-13003 npn transistors 700V 1A equivalent mje13003 MJE-13002 of mje13003 PDF

    mje13003

    Abstract: 2n2222 npn switching transistor mje13003 equivalent UTCMJE13003 2N2222 NPN Transistor features
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 O-126 QW-R204-004 mje13003 2n2222 npn switching transistor mje13003 equivalent UTCMJE13003 2N2222 NPN Transistor features PDF

    mje13002

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS MJE13002 MJE13003 TO-126 Plastic Package Suitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers and


    Original     		MJE13002 MJE13003 O-126 C-120 MJE13002 13003Rev090502 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 O-220 QW-R203-017 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 O-126 QW-R204-004 PDF

    mje13003

    Abstract: MJE-13003 mje13002
    Text: MJE13002 / MJE13003 NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching


    Original     		MJE13002 MJE13003 100oC 100oC O-126 25Adc 25Adc, mje13003 MJE-13003 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .


    Original     		MJE13003 290ns O-126 MJE13003L QW-R204-004 PDF

    MJE13003

    Abstract: MJE13003 transistor mje13003 equivalent equivalent mje13003 1A 300V TRANSISTOR 2N2222 NPN Transistor features transistor mje13003 1N4933 NPN Transistor 1.5A 5V 2N2222
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .


    Original     		MJE13003 O-220 290ns MJE13003L MJE13003-x-TA3-F-T QW-R203-017 MJE13003 MJE13003 transistor mje13003 equivalent equivalent mje13003 1A 300V TRANSISTOR 2N2222 NPN Transistor features transistor mje13003 1N4933 NPN Transistor 1.5A 5V 2N2222 PDF

    MJE13003 transistor

    Abstract: equivalent mje13003 transistor mje13003 mje13003 equivalent MJE13003 MJE13003L 1.5A 2A coil Driver 1A 300V TRANSISTOR MJE13003L-X-T60-F-K 300V transistor npn 2a
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .


    Original     		MJE13003 290ns O-126 MJE13003L MJE13003-x-T60-F-Kt QW-R204-004 MJE13003 transistor equivalent mje13003 transistor mje13003 mje13003 equivalent MJE13003 MJE13003L 1.5A 2A coil Driver 1A 300V TRANSISTOR MJE13003L-X-T60-F-K 300V transistor npn 2a PDF

    equivalent mje13003

    Abstract: mje13003 equivalent 2N2222 NPN Transistor to 92 OF transistor 2N2222 to-92 OF transistor 2N2222
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.


    Original     		MJE13003 290ns MJE13003L-x-x-T60-K MJE13003G-x-x-T60-K O-126 MJE13003L-x-x-T6C-A-K QW-R204-004 equivalent mje13003 mje13003 equivalent 2N2222 NPN Transistor to 92 OF transistor 2N2222 to-92 OF transistor 2N2222 PDF

    equivalent mje13003

    Abstract: mje13003 equivalent MJE13003-X-T60-F-K MJE13003 TO-92 MJE13003G Transistor 2N2222 NPN TO92 OF transistor 2N2222 to-92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.


    Original     		MJE13003 290ns MJE13003L MJE13003G MJE13003L-x-T60-A-K MJE13003L-x-T60-F-lues QW-R204-004 equivalent mje13003 mje13003 equivalent MJE13003-X-T60-F-K MJE13003 TO-92 MJE13003G Transistor 2N2222 NPN TO92 OF transistor 2N2222 to-92 PDF

    2n2222 transistor pin b c e

    Abstract: DATA SHEET OF transistor 2N2222 to-92 transistor mje13003 equivalent mje13003 MJE13003 transistor OF transistor 2N2222 to-92 2n2222 to-92 mje13003 equivalent MJE13003 mje13003l
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.


    Original     		MJE13003 290ns MJE13003L MJE13003G QW-R204-004 2n2222 transistor pin b c e DATA SHEET OF transistor 2N2222 to-92 transistor mje13003 equivalent mje13003 MJE13003 transistor OF transistor 2N2222 to-92 2n2222 to-92 mje13003 equivalent MJE13003 mje13003l PDF

    MJE13003

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


    Original     		MJE13003 290ns MJE13003L-x-T60-K MJE13003G-at QW-R204-004 MJE13003 PDF