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    MJE 280 POWER TRANSISTOR Search Results

    MJE 280 POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MJE 280 POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bf500

    Abstract: ZTX1055A 161627 DSA003762
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.25 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Pulse Width T -Temperature °C Collector-Base Voltage Transient Thermal Resistance Derating curve


    Original     		PDF ZTX1055A 100ms ZTX1055A 60E-12 0E-13 0E-10 3E-12 6E-12 700E-12 bf500 161627 DSA003762

    MJE 280 power transistor

    Abstract: ZTX1048A transistor bf 494 ZTX 450 F 1048A NPN Transistor 10A 100V DSA003762 136E-12
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1048A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu D=0.1 0.50 ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am Max Power Dissipation - Watts D=1(D.C) 160 100 ISSUE 3 – FEBRUARY 1995


    Original     		PDF ZTX1048A 100ms NY11725 MJE 280 power transistor ZTX1048A transistor bf 494 ZTX 450 F 1048A NPN Transistor 10A 100V DSA003762 136E-12

    Q62702-F1378

    Abstract: MJE 280 power transistor
    Text: BFP 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF 900MHz OT-143 Q62702-F1378 Dec-11-1996 Q62702-F1378 MJE 280 power transistor

    VPS05178

    Abstract: on BE 187 TRANSISTOR
    Text: BFP 280 NPN Silicon RF Transistor 3  For low noise, low-power amplifiers in mobile communications systems pager, cordless 4 telephone at collector currents from 0.2 mA to 8 m  fT = 7.5 GHz 2 F = 1.5 dB at 900 MHz 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF VPS05178 OT-143 900MHz Oct-12-1999 VPS05178 on BE 187 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: BFR 280 NPN Silicon RF Transistor 3  For low noise, low-power amplifiers in mobile communications systems pager, cordless telephone at collector currents from 0.2 mA to 8 m  fT = 7.5 GHz 2 F = 1.5 dB at 900 MHz 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF VPS05161 OT-23 900MHz Oct-25-1999

    MJE 280 power transistor

    Abstract: Q62702-F1298 bfr280
    Text: BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF 900MHz OT-23 Q62702-F1298 Dec-11-1996 MJE 280 power transistor Q62702-F1298 bfr280

    TF-450

    Abstract: BF 494 C ztx 450 ZTX1047A transistor bf 494 bf550 DSA003761
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1047A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible re tu D=0.1 0.50 ra pe 80 60 C B m te D=0.5 0.75 t en bi tp 120 Am


    Original     		PDF ZTX1047A 100ms NY11725 TF-450 BF 494 C ztx 450 ZTX1047A transistor bf 494 bf550 DSA003761

    BFP620F

    Abstract: fa 5571 transistor 3884 BFP620F ACs
    Text: BFP620F NPN Silicon Germanium RF Transistor XYs Preliminary data  For high gain low noise amplifiers  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 0.65 dB at 1.8 GHz 2 4 outstanding G ms = 21 dB at 1.8 GHz 1 • Gold metallization for extra high reliability


    Original     		PDF BFP620F Aug-09-2001 BFP620F fa 5571 transistor 3884 BFP620F ACs

    fa 5571

    Abstract: BFP620F transistor 3884
    Text: BFP620F NPN Silicon Germanium RF Transistor XYs Preliminary data  For high gain low noise amplifiers  Smallest Package 1.4 x 0.8 x 0.59mm 3  Noise figure F = 0.65 dB at 1.8 GHz 2 4 outstanding G ms = 21 dB at 1.8 GHz 1 • Gold metallization for extra high reliability


    Original     		PDF BFP620F Dec-07-2001 fa 5571 BFP620F transistor 3884

    80500 TRANSISTOR

    Abstract: Vo 80500 TRANSISTOR astec custom power micron fuse resistors Widlar 450FF Bipolar Power Transistor Data Astec Semiconductor 1fa MARKING AS1700-NPN
    Text: AS17xx Semicustom Bipolar Array Features Description Size single tile • 87 x 75 mils Expandability of array (to 2 or 4 tiles) The AS17xx is Astec’s proprietary semicustom bipolar array. This semicustom IC is a collection of individual transistors and resistors in a fixed configuration. The custom circuit is


    Original     		PDF AS17xx AS17xx 80500 TRANSISTOR Vo 80500 TRANSISTOR astec custom power micron fuse resistors Widlar 450FF Bipolar Power Transistor Data Astec Semiconductor 1fa MARKING AS1700-NPN

    Untitled

    Abstract: No abstract text available
    Text: BFP620F XYs NPN Silicon Germanium RF Transistor Preliminary data  High gain low noise RF transistor 3  Small package 1.4 x 0.8 x 0.59 mm 2 4  Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz  Maximum stable gain


    Original     		PDF BFP620F Feb-20-2003

    Transistor BC 1078

    Abstract: Transistor BC 1078 transistor transistor marking R2s TRANSISTOR MARKING YB BC 1078 transistor BF 245 C equivalent BI 425
    Text: BFP620F E7764 XYs NPN Silicon Germanium RF Transistor Preliminary data  High gain low noise RF transistor 3  Small package 1.4 x 0.8 x 0.59 mm 2 4  Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz  Maximum stable gain


    Original     		PDF BFP620F E7764 Jul-03-2003 Transistor BC 1078 Transistor BC 1078 transistor transistor marking R2s TRANSISTOR MARKING YB BC 1078 transistor BF 245 C equivalent BI 425

    11744 502

    Abstract: No abstract text available
    Text: SIEMENS BFP 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1.5dB at 900MHz REs Q62702-F1378 1 =C 2=E 3=B Package


    OCR Scan     		PDF 900MHz Q62702-F1378 OT-143 11744 502

    t559

    Abstract: No abstract text available
    Text: SIEMENS BFP 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1 .5 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz Q62702-F1378 OT-143 fl235bG5 53SLDS t559

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A ISSUE 3 -JANUARY 1995_ — FEATURES * * * * - V ceo=120V 3 A m p continuous Current 6 A m p pulse Current Very Low Saturation Voltage APPLICATIONS *


    OCR Scan     		PDF ZTX1055A NY11725 3510Metroplaza,

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-rioise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 81 FAs


    OCR Scan     		PDF Q62702-F1611 OT-143 900MHz

    E 94733

    Abstract: No abstract text available
    Text: SIEMENS BFR 92P NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT92 PNP • CECC-type available: CECC 50002/249 ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF BFT92 Q62702-F1050 OT-23 fl235bG5 900MHz 35b05 E 94733

    E 94733

    Abstract: p1S SOT-89 BFr pnp transistor SPICE 2G6
    Text: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1488 OT-323 900MHz E 94733 p1S SOT-89 BFr pnp transistor SPICE 2G6

    E 94733

    Abstract: AH-1 SOT23
    Text: SIEMENS BFR 92P NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT92 PNP • CECC-type available: CECC 50002/249 ESP: Electrostatic discharge sensitive device observe handling precaution!


    OCR Scan     		PDF BFT92 Q62702-F1050 OT-23 900MHz E 94733 AH-1 SOT23

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Marking Ordering Code Type Q62702-F1611


    OCR Scan     		PDF Q62702-F1611 OT-143 0535bOS 900MHz fl235b05

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1488 OT-323 053SbOS 900MHz 15nlA 23Sb05

    bfq81

    Abstract: ki12
    Text: SIEMENS BFQ81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. 1=B h Q62702-F1049 O RAs CO BFQ81 ro il m ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF BFQ81 OT-23 Q62702-F1049 900MHz bfq81 ki12

    TF-450

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 7 A ISSUE 3 -JANUARY 1995_ _ FEATURES * Very Low Saturation Voltage * High Gain * 4 Amp Continuous Current APPLICATIONS * DC-DC Convertors * Power Management - Supply Switching


    OCR Scan     		PDF ZTX1047A NY11725 JS70S7Ã TF-450

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFQ 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF Q62702-F1049 OT-23 900MHz