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    MJD12 Price and Stock

    Micro Commercial Components MJD122-TP

    TRANS NPN DARL 100V 8A DPAK
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    DigiKey MJD122-TP Cut Tape 31,790 1
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    MJD122-TP Digi-Reel 31,790 1
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    STMicroelectronics MJD122T4

    TRANS NPN DARL 100V 8A DPAK
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    DigiKey MJD122T4 Digi-Reel 7,428 1
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    MJD122T4 Cut Tape 7,428 1
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    STMicroelectronics MJD122T4 11,364 1
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    Bristol Electronics MJD122T4 7,395 9
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    Quest Components MJD122T4 5,916
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    onsemi MJD122G

    TRANS NPN DARL 100V 8A DPAK
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    DigiKey MJD122G Tube 5,673 1
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    Avnet Americas MJD122G Tube 787 12 Weeks 1
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    MJD122G Bulk 15 Weeks, 1 Days 1
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    Mouser Electronics MJD122G 9,466
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    Arrow Electronics MJD122G 3,252 12 Weeks 1
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    Onlinecomponents.com MJD122G 3,150
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    Avnet Asia MJD122G 12 Weeks 1,650
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    Chip1Stop MJD122G Tube 48
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    onsemi NJVMJD127T4G

    TRANS PNP DARL 100V 8A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NJVMJD127T4G Digi-Reel 4,828 1
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    NJVMJD127T4G Cut Tape 4,828 1
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    onsemi NJVMJD122T4G

    TRANS NPN DARL 100V 8A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NJVMJD122T4G Cut Tape 2,748 1
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    Avnet Silica NJVMJD122T4G 2,500 13 Weeks 2,500
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    Find more MJD12 price and stock on Findchips.com

    MJD12 Datasheets (76)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MJD122 Fairchild Semiconductor NPN Silicon Darlington Transistor Original PDF
    MJD122 Fairchild Semiconductor NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A Original PDF
    MJD122 Fairchild Semiconductor NPN SILICON DARLINGTON TRANSISTOR Original PDF
    MJD122 Motorola SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT Original PDF
    MJD122 On Semiconductor Complementary Darlington Power Transistors Original PDF
    MJD122 On Semiconductor Complementary Darlington Power Transistor Original PDF
    MJD122 On Semiconductor Complementary Darlington Power Transistor Original PDF
    MJD122 STMicroelectronics Low voltage power Darlington transistor Original PDF
    MJD122 STMicroelectronics Low voltage power Darlington transistor Original PDF
    MJD122 STMicroelectronics COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Original PDF
    MJD122 Fairchild Semiconductor NPN SILICON DARLINGTON TRANSISTOR Scan PDF
    MJD122 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJD122 Motorola Silicon Power Transistors 8A 100V 20W Scan PDF
    MJD122 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    MJD122-1 Fairchild Semiconductor NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A Original PDF
    MJD122-1 Motorola SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT Original PDF
    MJD122-1 On Semiconductor TRANS DARLINGTON NPN 100V 8A 3DPAK Original PDF
    MJD122-1 On Semiconductor MJD122 - TRANSISTOR 8 A, 100 V, NPN, Si, POWER TRANSISTOR, CASE 369-07, DPAK-3, BIP General Purpose Power Original PDF
    MJD122-1 STMicroelectronics COMPLEMENTARY POWER DARLINGTON TRANSISTORS Original PDF
    MJD122-1 STMicroelectronics Low voltage power Darlington transistor Original PDF

    MJD12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJD122

    Abstract: TIP125-TIP127 mjd122g
    Text: MJD122, MJD122T4G NPN , MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features http://onsemi.com SILICON POWER TRANSISTOR 8 AMPERES


    Original     		PDF MJD122, NJVMJD122T4G MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD122 mjd122g

    MJD122

    Abstract: TIP122
    Text: MJD122 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead Pb -Free 1.BASE 2.COLLECTOR 3.EMITTER Features: 1 2 3 D-PAK(TO-252) * High DC current gain * Electrically similar to popular TIP122 * Built-in a damper diode at E-C ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating


    Original     		PDF MJD122 O-252) TIP122 13-Apr-07 O-252 MJD122 TIP122

    MJD122T4G

    Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127
    Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves


    Original     		PDF MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD122T4G 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MJD122 Features • Silicon NPN epitaxial planer Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF MJD122

    Untitled

    Abstract: No abstract text available
    Text: MJD127 MJD127 D-PAK for Surface Mount Applications • • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP127


    Original     		PDF MJD127 TIP127 MJD122 MJD122 MJD127TF O-252

    MJD1222

    Abstract: mjd907
    Text: MJD907 MJD907 Power Amplifier Applications • • • • • High DC Current Gain Low Collector-Emitter Saturation Voltage Built-in a Damper Diode at E-C Darlington TR Complement to MJD1222 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Silicon Darlington Transistor


    Original     		PDF MJD907 MJD1222 MJD1222 mjd907

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors MJD122 TO-251 TO-252-2L TRANSISTOR（NPN） FEATURES 1.BASE ∙ High DC current gain ∙ Electrically similar to popular TIP122 ∙ Built-in a damper diode at E-C


    Original     		PDF O-251/TO-252-2L MJD122 O-251 O-252-2L TIP122

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 MJD127 Plastic-Encapsulate Transistors TO-252 TRANSISTOR PNP FEATURES 1. BASE High DC Current Gain Electrically Similar to Popular TIP127 Built-in a Damper Diode at E-C 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-252 MJD127 TIP127 -100V -16mA -80mA

    morocco tip122

    Abstract: TIP127 Application Note TO252 MJD122 MJD127 TIP122 TIP127 st morocco tip122
    Text: MJD122 MJD127  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL


    Original     		PDF MJD122 MJD127 O-252 TIP122 TIP127 MJD122 MJD127 morocco tip122 TIP127 Application Note TO252 TIP127 st morocco tip122

    MJD127T4G

    Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127
    Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS


    Original     		PDF MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD127T4G 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127

    TRANSISTOR tip122

    Abstract: QS 100 NPN Transistor MJD122 MJD127 TIP122 darlington transistor NPN tip122 npn
    Text: MJD122 NPN Silicon Darlington Transistor Features • • • • • • Equivalent Circuit D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications Electrically Similar to Popular TIP122


    Original     		PDF MJD122 TIP122 MJD127 TRANSISTOR tip122 QS 100 NPN Transistor MJD122 MJD127 TIP122 darlington transistor NPN tip122 npn

    Untitled

    Abstract: No abstract text available
    Text: MJD122 NPN TO-251/TO-525-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High DC current gain Electrically similar to popular TIP122 Built-in a damper diode at E-C TO-252-2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF MJD122 O-251/TO-525-2L O-251 TIP122 O-252-2L

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MJD127 Features • • • • Silicon PNP epitaxial planer Transistors High DC Current Gain Electrically similar to popular TIP 127


    Original     		PDF MJD127

    MJD122

    Abstract: JESD97 MJD122-1 MJD122T4 MJD127
    Text: MJD122 Low voltage power Darlington transistor Features • Low base drive requirements ■ Integrated antiparallel collector-emitter diode ■ Through hole TO-251 IPAK power package in tube (suffix “-1”) ■ Surface mounting TO-252 (DPAK) power package in tape & reel (suffix “T4”)


    Original     		PDF MJD122 O-251 O-252 MJD127. MJD122T4also MJD122 JESD97 MJD122-1 MJD122T4 MJD127

    MJD122

    Abstract: ST DARLINGTON TRANSISTOR Date Code Marking STMicroelectronics PACKAGE DPAK JESD97 MJD122-1 MJD122T4 MJD127 ST T4 0
    Text: MJD122 Low voltage power Darlington transistor Features • Low base drive requirements ■ Integrated antiparallel collector-emitter diode ■ Through hole TO-251 IPAK power package in tube (suffix “-1”) ■ Surface mounting TO-252 (DPAK) power package in tape & reel (suffix “T4”)


    Original     		PDF MJD122 O-251 O-252 MJD127. MJD122T4n MJD122 ST DARLINGTON TRANSISTOR Date Code Marking STMicroelectronics PACKAGE DPAK JESD97 MJD122-1 MJD122T4 MJD127 ST T4 0

    MJD128T4G

    Abstract: J128G
    Text: MJD128T4G PNP Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Features Designed for general purpose amplifier and low speed switching applications. • Monolithic Construction With Built−in Base−Emitter Shunt Resistors


    Original     		PDF MJD128T4G MJD128/D MJD128T4G J128G

    Untitled

    Abstract: No abstract text available
    Text: MJD127 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k


    Original     		PDF MJD127

    tip120tip122

    Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127
    Text: MJD122 NPN MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS Features


    Original     		PDF MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D tip120tip122 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MJD127 Features • • • • Silicon PNP epitaxial planer Transistors High DC Current Gain Electrically similar to popular TIP 127


    Original     		PDF MJD127

    TS 4142

    Abstract: W1000 MJD127 TIP127
    Text: SAMSUNG ELECTRONICS INC MJD127 M2E D Bi 7=31,4142 000=1021, Ö Œ S M G K PNP SILICON DARLINGTON TRANSÌSTOR "T'33> -3' D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • H ig h D C Current G ain Built-in a D am p e r D io d e at E-C L e ad F o rm e d tor S u rfa c e M o u n t A p p lic a tio n s N o Suffix


    OCR Scan     		PDF MJD127 TIP127 -30VE le-250 TS 4142 W1000 TIP127

    Untitled

    Abstract: No abstract text available
    Text: MJD122 NPN SILICON DARLINGTON TRANSISTOR D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • High DC Current Gain Built-in a Dam per Diode at E-C Lead Formed for Surface Mount Applications N o Suffix Straight Lead (l-PACK, “ - 1 ” Suffix) Electrically Sim ilar to Popular TIP122


    OCR Scan     		PDF MJD122 TIP122

    Untitled

    Abstract: No abstract text available
    Text: MJD122 MJD127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • STMicraelctronics PREFERRED SALESTYPES . LOW BASE-DRIVE REQUIREMENTS . INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE . SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”)


    OCR Scan     		PDF MJD122 MJD127 O-252 TIP122 TIP127 MJD122 MJD127

    Untitled

    Abstract: No abstract text available
    Text: S A MS UN G E L E C T R O N I C S MJD122 INC 42E 3> B 7 cJ b m 4 2 QQQT023 2 Q S M G K NPN SILICON DARLINGTON TRANSISTOR D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • H igh D C Current Gain Built-In a Damper Diode at E-C Lead Formed tor Surface Mount Applications No Suffix


    OCR Scan     		PDF MJD122 QQQT023 TIP122 71b4142

    "Darlington Transistor"

    Abstract: No abstract text available
    Text: MJD122 NPN SILICON DARLINGTON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode a t E-C Lead Formed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1" Suffix)


    OCR Scan     		PDF MJD122 "Darlington Transistor"