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    onsemi MJ11032G

    TRANS NPN DARL 120V 50A TO204
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    onsemi MJ11030

    TRANS NPN DARL 90V 50A TO204
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    onsemi MJ11032

    TRANS NPN DARL 120V 50A TO204
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    Win Source Electronics MJ11032 2,000
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    onsemi MJ11030G

    TRANS NPN DARL 90V 50A TO204
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    Quest Components MJ11030G 1
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    onsemi MJ11033G

    TRANS PNP DARL 120V 50A TO204
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    DigiKey MJ11033G Tray 1
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    Avnet Americas MJ11033G Tray 0 Weeks, 2 Days 74
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    MJ11033G Bulk 9 Weeks, 1 Days 1
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    MJ11033G Tray 10 Weeks 1
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    Mouser Electronics MJ11033G 422
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    MJ11033G 290 5
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    Onlinecomponents.com MJ11033G 290
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    MJ1103 Datasheets (55)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MJ11030 Motorola 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS Original PDF
    MJ11030 On Semiconductor High-Current Complementary Silicon Transistors Original PDF
    MJ11030 Semelab Complementary Darlington Power Transistor Original PDF
    MJ11030 Mospec POWER TRANSISTOR(50A,60-120V,300W) Scan PDF
    MJ11030 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJ11030 Motorola European Master Selection Guide 1986 Scan PDF
    MJ11030 Motorola 50A Complementary Silicon Darlington Power Transistors Scan PDF
    MJ11030 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MJ11030 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MJ11030 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MJ11030 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Bipolar Power, NPN, 50A, 90V, Pkg Style TO204 Scan PDF
    MJ11030 Semelab Bi-polar Transistors (CECC and High Rel) & High Energy Scan PDF
    MJ11030G On Semiconductor Bipolar Power TO3 NPN 50A 90V Original PDF
    MJ11031 Motorola 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS Original PDF
    MJ11031 Semelab Complementary Darlington Power Transistor Original PDF
    MJ11031 Advanced Semiconductor RANSISTOR,BJT,DARLINGTON,NPN,500V V(BR)CEO,50A I(C),TO-204AE Scan PDF
    MJ11031 Mospec POWER TRANSISTOR(50A,60-120V,300W) Scan PDF
    MJ11031 Motorola European Master Selection Guide 1986 Scan PDF
    MJ11031 Motorola 50A Complementary Silicon Darlington Power Transistors Scan PDF
    MJ11031 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF

    MJ1103 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJ11033

    Abstract: No abstract text available
    Text: PNP MJ11033 SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)


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    PDF MJ11033 -120V MJ11033

    MJ11032

    Abstract: MJ110xx MJ11028-29 Transistor power amp transistors mj11033 TRANSISTOR MJ11028 and/transistor MJ11032
    Text: NPN MJ11028, MJ11030, MJ11032 (PNP) MJ11029, MJ11033 High−Current Complementary Silicon Power Transistors http://onsemi.com . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − • • •


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    PDF MJ11028, MJ11030, MJ11032 MJ11029, MJ11033 MJ11028/29 MJ11030 MJ11032/33 MJ11032 MJ110xx MJ11028-29 Transistor power amp transistors TRANSISTOR MJ11028 and/transistor MJ11032

    MJ11033G

    Abstract: MJ11028-29 Transistor transistor mj11028 equivalent 100 amp npn darlington power transistors COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS IC 204 MJ11032 MJ11032G MJ11028 MJ11029
    Text: MJ11028, MJ11030, MJ11032 NPN MJ11029, MJ11033 (PNP) High−Current Complementary Silicon Power Transistors http://onsemi.com High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier


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    PDF MJ11028, MJ11030, MJ11032 MJ11029, MJ11033 MJ11028/D MJ11033G MJ11028-29 Transistor transistor mj11028 equivalent 100 amp npn darlington power transistors COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS IC 204 MJ11032 MJ11032G MJ11028 MJ11029

    Untitled

    Abstract: No abstract text available
    Text: MJ11031 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF MJ11031 O204AE) 18-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: MJ11031 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF MJ11031 O204AE) 1-Aug-02

    pin diagram of ic 4066

    Abstract: ic tc 4066 diagram 100 amp npn darlington power transistors MJ11032 transistor MJ11032 60 amp npn darlington power transistors 10 amp npn darlington power transistors 5 amp npn darlington power transistors MJ11033 transistor mj11032 equivalent
    Text: MJ11032, 11033 Darlington Power Transistors Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications. Features: • High Gain Darlington performance. • High DC Current Gain: hFE = 1000 Minimum at IC = 25A,


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    PDF MJ11032, pin diagram of ic 4066 ic tc 4066 diagram 100 amp npn darlington power transistors MJ11032 transistor MJ11032 60 amp npn darlington power transistors 10 amp npn darlington power transistors 5 amp npn darlington power transistors MJ11033 transistor mj11032 equivalent

    MJ11033G

    Abstract: MJ11032 MJ11028-29 Transistor MJ11029 MJ11032G MJ11028 TRANSISTOR MJ11028 transistor MJ11032 MJ11030 MJ11029G
    Text: MJ11028, MJ11030, MJ11032 NPN MJ11029, MJ11033 (PNP) High-Current Complementary Silicon Power Transistors High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features


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    PDF MJ11028, MJ11030, MJ11032 MJ11029, MJ11033 MJ11028/29 MJ11030 MJ11032/33 MJ11033G MJ11032 MJ11028-29 Transistor MJ11029 MJ11032G MJ11028 TRANSISTOR MJ11028 transistor MJ11032 MJ11030 MJ11029G

    transistor mj11028 equivalent

    Abstract: MJ11033 MJ11032 darlington 300w transistor mj11032 equivalent MJ11028 MJ11029 300w amplifier darlington npn 90v MJ11031
    Text: SEME LAB MECHANICAL DATA Dimensions in mm inches NPN PNP MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 COMPLEMENTARY DARLINGTON POWER TRANSISTOR 25.4 (1.0) 10.92 (0.430) 1.57 (0.062) 30 .15 (1.187 ) FEATURES 1 • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A


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    PDF MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 TEMPJ11033 100mA transistor mj11028 equivalent MJ11033 MJ11032 darlington 300w transistor mj11032 equivalent MJ11028 MJ11029 300w amplifier darlington npn 90v MJ11031

    Untitled

    Abstract: No abstract text available
    Text: S EM E LA B MECHANICAL DATA Dimensions in mm inches NPN PNP MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 COMPLEMENTARY DARLINGTON POWER TRANSISTOR 25.4 (1.0) 10.92 (0.430) 1.57 (0.062) 30 .15 (1.18 7 ) FEATURES 1 • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A


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    PDF MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 MJ11028 MJ11030 MJ11029

    Untitled

    Abstract: No abstract text available
    Text: MJ11032 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF MJ11032 O204AE) 18-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: MJ11030 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF MJ11030 O204AE) 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: MJ11032 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF MJ11032 O204AE) 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: MJ11028, MJ11030, MJ11032 NPN MJ11029, MJ11033 (PNP) High-Current Complementary Silicon Power Transistors http://onsemi.com High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications.


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    PDF MJ11028, MJ11030, MJ11032 MJ11029, MJ11033 MJ11028/D

    mj11032 mexico

    Abstract: MJ11032 transistor mj11028 equivalent MJ11028 MJ11029 MJ11033
    Text: ON Semiconductort NPN MJ11028 High-Current Complementary Silicon Transistors MJ11032* PNP . . . for use as output devices in complementary general purpose amplifier applications. MJ11029 • High DC Current Gain — MJ11033 * • • • hFE = 1000 Min @ IC = 25 Adc


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    PDF MJ11028 MJ11032* MJ11029 MJ11033 r14525 MJ11028/D mj11032 mexico MJ11032 transistor mj11028 equivalent MJ11028 MJ11029 MJ11033

    Untitled

    Abstract: No abstract text available
    Text: S EM E LA B MECHANICAL DATA Dimensions in mm inches NPN PNP MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 COMPLEMENTARY DARLINGTON POWER TRANSISTOR 25.4 (1.0) 10.92 (0.430) 1.57 (0.062) 30 .15 (1.18 7 ) FEATURES 1 • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A


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    PDF MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 100mA 250mA

    Untitled

    Abstract: No abstract text available
    Text: MJ11033 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)50 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0m» @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k


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    PDF MJ11033

    Untitled

    Abstract: No abstract text available
    Text: MJ11030 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF MJ11030 O204AE) 18-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: MJ11030 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF MJ11030 O204AE) 1-Aug-02

    TRANSISTOR MJ11029

    Abstract: transistor MJ11032 MJ11029 mj11033 TRANSISTOR MJ11028
    Text: NPN MJ11028, MJ11030, MJ11032 (PNP) MJ11029, MJ11033 High−Current Complementary Silicon Power Transistors http://onsemi.com . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − • • •


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    PDF MJ11028, MJ11030, MJ11032 MJ11029, MJ11033 MJ11028/29 MJ11030 MJ11032/33 TRANSISTOR MJ11029 transistor MJ11032 MJ11029 TRANSISTOR MJ11028

    darlington transistor 90v

    Abstract: MJ11030 MJ11031
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -90V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A ·Complement to Type MJ11030


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    PDF MJ11030 -250mA 500mA -500mA darlington transistor 90v MJ11030 MJ11031

    transistor MJ11032

    Abstract: transistor mj11032 equivalent Wing Shing Computer Components MJ11032
    Text: NPN MJ11032 SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)


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    PDF MJ11032 -120V transistor MJ11032 transistor mj11032 equivalent Wing Shing Computer Components MJ11032

    NPN transistor Ic 50A

    Abstract: darlington transistor 90v darlington npn 90v MJ11030 MJ11031
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= 90V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A ·Complement to Type MJ11031


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    PDF MJ11031 250mA 500mA NPN transistor Ic 50A darlington transistor 90v darlington npn 90v MJ11030 MJ11031

    MJ11023

    Abstract: mj power transistor TRANSISTOR 2SC 635 transistor k 1119 transistor f 421 s417 938-520 MJ11033 MJ11028 MJ11029
    Text: 4 2 £ > -S Z O M m o to r o la O flit , MJ11028 MJ11029 MJ11030 MJ11031 MJ11032 MJ11033 NPN PNP 50 AMPERE COM PLEMENTARY SILICON DARLING TO N POWER TRANSISTOR H IG H -C U R R EN T COM PLEMENTARY SILICO N TRANSISTORS . for use as output devices in complementary general purpose


    OCR Scan
    PDF MJ1102S MJ11029 MJ11030 MJ11031 MJ11032 MJ11033 MJ11033 MJ11023 mj power transistor TRANSISTOR 2SC 635 transistor k 1119 transistor f 421 s417 938-520 MJ11028

    FLC 100

    Abstract: No abstract text available
    Text: 4bE D • b3b72Si4 GG'iaTO? MO T O R O L A SC □ ■ HOTb XSTRS/R F MOTOROLA SEMICONDUCTOR ■ m h h h h m h m h h TECHNICAL DATA NPN MJ11032HX, HXV PNP MJ11033HX, HXV NPN/PNP Silicon Complementary Power Darlington Transistors DM0 lllllll Discrete M ilitary


    OCR Scan
    PDF b3b72Si4 MJ11032HX, MJ11033HX, FLC 100