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    MJ11016 EQUIVALENT Search Results

    MJ11016 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    MJ11016 EQUIVALENT Datasheets Context Search

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    mj11015 equivalent

    Abstract: MJ11016 equivalent 2SC1096 equivalent nsd15 MJ3237 BU108 BD875 equivalent MJ4502 EQUIVALENT 2SD718 2sb688 amplifier schematic SDN6000
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 Min @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor


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    PDF TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N6490 mj11015 equivalent MJ11016 equivalent 2SC1096 equivalent nsd15 MJ3237 BU108 BD875 equivalent MJ4502 EQUIVALENT 2SD718 2sb688 amplifier schematic SDN6000

    MC7812

    Abstract: MJ11016 equivalent equivalent of BS170 MJ11016 MC7812 equivalent ferroxcube P3C8 MC1391P MC7812 MOTOROLA 2N5337 MJL16218
    Text: MOTOROLA Order this document by MJL16218/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJL16218* NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors *Motorola Preferred Device POWER TRANSISTOR 15 AMPERES


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    PDF MJL16218/D MJL16218* MJL16218 MC7812 MJ11016 equivalent equivalent of BS170 MJ11016 MC7812 equivalent ferroxcube P3C8 MC1391P MC7812 MOTOROLA 2N5337

    MJ11016 equivalent

    Abstract: ferroxcube P3C8 mc7812 MC7812 MOTOROLA MOTOROLA TRANSISTOR motorola bipolar transistor MC7812 equivalent MJL16218 MOTOROLA POWER TRANSISTOR 2N6191
    Text: MOTOROLA Order this document by MJL16218/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJL16218* NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors *Motorola Preferred Device POWER TRANSISTOR 15 AMPERES


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    PDF MJL16218/D MJL16218* MJL16218 MJL16218 MJ11016 equivalent ferroxcube P3C8 mc7812 MC7812 MOTOROLA MOTOROLA TRANSISTOR motorola bipolar transistor MC7812 equivalent MOTOROLA POWER TRANSISTOR 2N6191

    pk mur460

    Abstract: MC1391P MUR460 PK 221D 2N5337 2N6191 MC7812 MJ11016 MJE16204 MJF16204
    Text: MOTOROLA Order this document by MJE16204/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


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    PDF MJE16204/D MJE16204 MJE16204 MJE16204/D* pk mur460 MC1391P MUR460 PK 221D 2N5337 2N6191 MC7812 MJ11016 MJF16204

    core ferroxcube

    Abstract: 2N619 221D 2N533 MC7812 MJ11016 MJE16204 MR85 MUR46
    Text: ON Semiconductort MJE16204 SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is specifically designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very resolution,


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    PDF MJE16204 MJE16204 r14525 MJE16204D core ferroxcube 2N619 221D 2N533 MC7812 MJ11016 MR85 MUR46

    BS170 MOTOROLA

    Abstract: MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004 MJF18006
    Text: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors


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    PDF MJW16212/D MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJF18008 MJE18008) MJW16212* BS170 MOTOROLA MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004 MJF18006

    MJ11016 equivalent

    Abstract: DIODE MOTOROLA 633 MTP12N10 pin configuration 726 MOTOROLA TRANSISTORS MJF16206 high voltage CRT transformer MC1391 MC1391P MJ11016 PK MUR1100
    Text: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar


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    PDF MJW16206/D MJW16206 MJF16206 MJW16206 MJW16206/D* MJ11016 equivalent DIODE MOTOROLA 633 MTP12N10 pin configuration 726 MOTOROLA TRANSISTORS high voltage CRT transformer MC1391 MC1391P MJ11016 PK MUR1100

    EQUIVALENT FOR mjf18004

    Abstract: MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004
    Text: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors


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    PDF MJW16212/D MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJF18008 MJE18008) MJW16212* EQUIVALENT FOR mjf18004 MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004

    2N5337

    Abstract: 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100 MUR8100E
    Text: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar


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    PDF MJW16206/D MJW16206 MJF16206 MJW16206 MJW16206/D* 2N5337 2N6191 MR856 MTP8P10 MUR8100 MUR8100E

    MDC1000A

    Abstract: 1811P3C8 MDC1000 2N5337 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100E
    Text: ON Semiconductort MJW16206 SCANSWITCHt NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors POWER TRANSISTORS 12 AMPERES 1200 VOLTS — VCES 50 and 150 WATTS The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODEt bipolar power transistors. They are specifically


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    PDF MJW16206 MJF16206 MJW16206 r14525 MJW16206/D MDC1000A 1811P3C8 MDC1000 2N5337 2N6191 MR856 MTP8P10 MUR8100E

    MC1391

    Abstract: MJW16212 transistor mjw16212 2N5337 2N6191 MC7812 MJF16212 MJH16212 MR856
    Text: ON Semiconductort MJW16212 * SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors *ON Semiconductor Preferred Device POWER TRANSISTOR 10 AMPERES 1500 VOLTS – VCES 50 AND 150 WATTS The MJW16212 is a state–of–the–art SWITCHMODE bipolar


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    PDF MJW16212 MJW16212 r14525 MJW16212/D MC1391 transistor mjw16212 2N5337 2N6191 MC7812 MJF16212 MJH16212 MR856

    1811P3C8

    Abstract: 2N5337 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100 MUR8100E
    Text: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar


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    PDF MJW16206/D MJW16206 MJF16206 MJW16206 MJW16206/D* 1811P3C8 2N5337 2N6191 MR856 MTP8P10 MUR8100 MUR8100E

    transistor rc 3866

    Abstract: t 3866 to220 power transistor t 3866 transistor equivalent transistor EQUIVALENT FOR mjf18004 bs170 replacement EIA/transistor rc 3866 pin configuration transistor bd140 TRANSISTOR REPLACEMENT table for transistor transistor cross reference BU108
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors MJW16212* The MJW16212 is a state–of–the–art SWITCHMODE bipolar power transistor. It


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    PDF MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJW16212 TIP73B TIP74 TIP74A transistor rc 3866 t 3866 to220 power transistor t 3866 transistor equivalent transistor EQUIVALENT FOR mjf18004 bs170 replacement EIA/transistor rc 3866 pin configuration transistor bd140 TRANSISTOR REPLACEMENT table for transistor transistor cross reference BU108

    2SC123

    Abstract: sec tip41c sec tip42c TRANSISTOR REPLACEMENT GUIDE TRANSISTOR tip41c pin out image Motorola transistors MJE3055 TO 127 TRANSISTOR BC 327 2sc1061 equivalent transistors BC 458 pnp pin configuration NPN transistor tip41c
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar power transistors. They are specifically designed for use in horizontal deflection


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    PDF MJW16206 MJF16206 MJW16206 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC123 sec tip41c sec tip42c TRANSISTOR REPLACEMENT GUIDE TRANSISTOR tip41c pin out image Motorola transistors MJE3055 TO 127 TRANSISTOR BC 327 2sc1061 equivalent transistors BC 458 pnp pin configuration NPN transistor tip41c

    BU108

    Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS


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    PDF 2N5877 2N5878 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801

    BU108

    Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A


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    PDF BUV20 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC194 transistor Bc 574 2SC1419 BU326 BU100

    transistor 3569

    Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —


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    PDF Bandwi32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 transistor 3569 t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033

    transistor MJ2501

    Abstract: BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ413 MJ423 High-Voltage NPN Silicon Transistors 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc


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    PDF MJ413 MJ423 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C transistor MJ2501 BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100

    automotive ignition tip162

    Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —


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    PDF BU323AP BU323AP TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C automotive ignition tip162 bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000

    BU108

    Abstract: TRANSISTOR REPLACEMENT GUIDE BD676 BD676A application note BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD676 BD676A BD678 BD678A BD680 BD680A BD682 Plastic Medium-Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc


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    PDF BD676, BD675, BD676 BD676A BD678 BD678A BD680 BD680A BD682 TIP73B BU108 TRANSISTOR REPLACEMENT GUIDE BD676 BD676A application note BU326 BU100

    2SC1419

    Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.


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    PDF MJE350 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2SC1419 TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108

    Motorola case 77

    Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc


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    PDF MJE200* MJE210* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C Motorola case 77 2N3055 BU108 2sc15 bdw93c applications BU326 BU100

    2SA1046

    Abstract: BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 Plastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS PNP SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


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    PDF BD437 BD441. BD438 BD440 BD442 TIP73B TIP74 TIP74A TIP74B TIP75 2SA1046 BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903

    2SC124

    Abstract: 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS


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    PDF 2N5191, 2N5192 2N5194 2N5195* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SC124 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100