Untitled
Abstract: No abstract text available
Text: NE W! Surface-Mount Power Splitter/Combiner 2 Way-90°, 50Ω, ADQ-90 55 to 90 MHz Maximum Ratings Features Operating Temperature -20°C to 85°C Storage Temperature -55°C to 100°C Power Input as a splitter 0.5W max. • • • • Pin Configuration good isolation, 26 dB typ.
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Original
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Way-90°
ADQ-90
CJ725
ADQ-90
M78490
ED-9192/1
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PDF
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Diode smd s6 68
Abstract: S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77
Text: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions
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Original
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GWM100-0085X1
IF110
ID110
A0-0085X1
100-085X1-SL
100-085X1-SMD
100-0085X1
100-0085X1
Diode smd s6 68
S4 42 DIODE
smd diode g6 DIODE S4 39 smd diode
DIODE marking S6 77
smd diode g6
smd diode S6
Diode smd s6 68 g1
S3 marking DIODE
smd diode code 03a
smd diode marking 77
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PDF
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S4 42 DIODE
Abstract: smd diode S6 smd diode code g3 DIODE marking S6 77 smd diode g6 DIODE S4 39 smd diode smd diode code g4 smd diode code g2 SMD SL DIODE S4 37
Text: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions
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Original
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GWM100-0085X1
ID110
IF110
100-0085X1
100-0085X1-SMD
100-0085X1
S4 42 DIODE
smd diode S6
smd diode code g3
DIODE marking S6 77
smd diode g6 DIODE S4 39 smd diode
smd diode code g4
smd diode code g2
SMD SL
DIODE S4 37
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PDF
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IXA 155
Abstract: 20PG1200DHGLB 4008g
Text: IXA 20PG1200DHGLB Advanced Technical Information XPT IGBT phaseleg IC25 = 32 A = 1200 V VCES VCE sat typ = 1.8 V ISOPLUS Surface Mount Power Device 7 D3 6 D1 S1 4 5 7 D4 9 1 D2 3 S2 Iso la to ted he su at rfa sin ce k 8 9 4 6 5 2 1 3 2 E72873 8 Features
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Original
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20PG1200DHGLB
E72873
20120131b
IXA 155
20PG1200DHGLB
4008g
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PDF
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Untitled
Abstract: No abstract text available
Text: IXA 20PG1200DHGLB Advanced Technical Information XPT IGBT phaseleg IC25 = 32 A = 1200 V VCES VCE sat typ = 1.8 V ISOPLUS Surface Mount Power Device 7 D3 6 D1 S1 4 5 7 D4 9 1 D2 3 S2 Iso la to ted he su at rfa sin ce k 8 9 4 6 5 2 1 3 2 E72873 8 Features
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Original
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20PG1200DHGLB
E72873
20110616a
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PDF
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Untitled
Abstract: No abstract text available
Text: IXA 30PG1200DHGLB Advanced Technical Information XPT IGBT phaseleg IC25 = 43 A = 1200 V VCES VCE sat typ = 1.9 V ISOPLUS Surface Mount Power Device 7 D3 6 D1 S1 4 5 7 D4 9 1 D2 3 S2 Iso la to ted he su at rfa sin ce k 8 9 4 6 5 2 1 3 2 E72873 8 Features
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Original
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30PG1200DHGLB
E72873
paralleli70
20120131b
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PDF
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Untitled
Abstract: No abstract text available
Text: IXA 30PG1200DHGLB Advanced Technical Information IC25 = 43 A = 1200 V VCES VCE sat typ = 1.9 V XPT IGBT phaseleg ISOPLUS Surface Mount Power Device 7 D3 6 9 D1 S1 4 7 8 1 3 2 5 D4 9 1 D2 3 S2 Iso la to ted he su at rfa sin ce k 4 6 5 2 E72873 8 Features
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Original
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30PG1200DHGLB
E72873
20120131b
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PDF
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Untitled
Abstract: No abstract text available
Text: IXA 20PG1200DHGLB Advanced Technical Information IC25 = 32 A = 1200 V VCES VCE sat typ = 1.8 V XPT IGBT phaseleg ISOPLUS Surface Mount Power Device 7 D3 6 9 D1 S1 4 7 8 1 3 2 5 D4 9 1 D2 3 S2 Iso la to ted he su at rfa sin ce k 4 6 5 2 E72873 8 Features
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Original
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20PG1200DHGLB
E72873
20120131b
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PDF
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Untitled
Abstract: No abstract text available
Text: IXA 30PG1200DHGLB Advanced Technical Information XPT IGBT phaseleg IC25 = 43 A = 1200 V VCES VCE sat typ = 1.9 V ISOPLUS Surface Mount Power Device 7 D3 6 D1 S1 4 5 7 D4 9 1 D2 3 S2 Iso la to ted he su at rfa sin ce k 8 9 4 6 5 2 1 3 2 E72873 8 Features
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Original
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30PG1200DHGLB
E72873
20110616a
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PDF
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Untitled
Abstract: No abstract text available
Text: IXA 40PG1200DHGLB Advanced Technical Information XPT IGBT phaseleg IC25 = 63 A = 1200 V VCES VCE sat typ = 1.85 V ISOPLUS Surface Mount Power Device 7 D3 6 D1 S1 4 5 7 D4 9 1 D2 3 S2 Iso la to ted he su at rfa sin ce k 8 9 4 6 5 2 1 3 2 E72873 8 Features
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Original
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40PG1200DHGLB
E72873
20110616a
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PDF
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Untitled
Abstract: No abstract text available
Text: IXA 40PG1200DHGLB Advanced Technical Information XPT IGBT phaseleg IC25 = 63 A = 1200 V VCES VCE sat typ = 1.85 V ISOPLUS Surface Mount Power Device 7 D3 6 D1 S1 4 5 7 D4 9 1 D2 3 S2 Iso la to ted he su at rfa sin ce k 8 9 4 6 5 2 1 3 2 E72873 8 Features
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Original
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40PG1200DHGLB
E72873
20120131b
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PDF
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MTI85W100GC
Abstract: No abstract text available
Text: MTI 85W100GC Three phase full Bridge VDSS = 100 V = 110 A ID25 RDSon typ. = 3.2 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 G2 S2 G4 G6 S4 S6 L- iv Symbol Conditions Maximum Ratings TJ = 25°C to 150°C max DC gate voltage
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Original
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85W100GC
MTI85W100GC
MTI85W100GC-SMD
MTI85W100GC
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PDF
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TPIC6B259
Abstract: BTA50
Text: TPIC6B259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS030 – APRIL 1994 – REVISED JULY 1995 • • • • • • • Low rDS on . . . 5 Ω Typical Avalanche Energy . . . 30 mJ Eight Power DMOS-Transistor Outputs of 150-mA Continuous Current 500-mA Typical Current-Limiting Capability
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Original
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TPIC6B259
SLIS030
150-mA
500-mA
TPIC6B259
BTA50
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PDF
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TPIC6B259
Abstract: BTA50
Text: TPIC6B259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS030 – APRIL 1994 – REVISED JULY 1995 • • • • • • • Low rDS on . . . 5 Ω Typical Avalanche Energy . . . 30 mJ Eight Power DMOS-Transistor Outputs of 150-mA Continuous Current 500-mA Typical Current-Limiting Capability
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Original
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TPIC6B259
SLIS030
150-mA
500-mA
TPIC6B259
BTA50
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PDF
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TPIC6259
Abstract: No abstract text available
Text: TPIC6259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS009A – APIRL 1992 – REVISED SEPTEMBER 1995 • • • • • • • Low rDS on . . . 1.3 Ω Typical Avalanche Energy . . . 75 mJ Eight Power DMOS Transistor Outputs of 250-mA Continuous Current 1.5-A Pulsed Current Per Output
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Original
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TPIC6259
SLIS009A
250-mA
TPIC6259
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PDF
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TPIC6B259
Abstract: No abstract text available
Text: TPIC6B259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS030 – APRIL 1994 – REVISED JULY 1995 • • • • • • • Low rDS on . . . 5 Ω Typical Avalanche Energy . . . 30 mJ Eight Power DMOS-Transistor Outputs of 150-mA Continuous Current 500-mA Typical Current-Limiting Capability
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Original
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TPIC6B259
SLIS030
150-mA
500-mA
TPIC6B259
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PDF
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TPIC6A259
Abstract: No abstract text available
Text: TPIC6A259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS004B – APRIL 1993 – REVISED SEPTEMBER 1995 • • • • • • • Low rDS on . . . 1 Ω Typ Output Short-Circuit Protection Avalanche Energy . . . 75 mJ Eight 350-mA DMOS Outputs 50-V Switching Capability
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Original
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TPIC6A259
SLIS004B
350-mA
TPIC6A259
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PDF
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TPIC6A259
Abstract: No abstract text available
Text: TPIC6A259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS004B – APRIL 1993 – REVISED SEPTEMBER 1995 • • • • • • • Low rDS on . . . 1 Ω Typ Output Short-Circuit Protection Avalanche Energy . . . 75 mJ Eight 350-mA DMOS Outputs 50-V Switching Capability
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Original
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TPIC6A259
SLIS004B
350-mA
TPIC6A259
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PDF
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2SK3388
Abstract: No abstract text available
Text: 2SK3388 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3388 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 82 mΩ (typ.) • High forward transfer admittance: |Yfs| = 20 S (typ.)
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2SK3388
2SK3388
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PDF
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TPIC6259
Abstract: No abstract text available
Text: TPIC6259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS009A – APRIL 1992 – REVISED SEPTEMBER 1995 • • • • • • • Low rDS on . . . 1.3 Ω Typical Avalanche Energy . . . 75 mJ Eight Power DMOS Transistor Outputs of 250-mA Continuous Current 1.5-A Pulsed Current Per Output
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Original
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TPIC6259
SLIS009A
250-mA
TPIC6259
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PDF
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25600
Abstract: No abstract text available
Text: BLUE CELL Surface Mount Power Splitter/Combiner 2 Way-0° 50Ω SBA-2-22 2000 to 2600 MHz Features Maximum Ratings Operating Temperature -40°C to 85°C Storage Temperature -55°C to 100°C RF Power 33 dBm max. l l l low profile, 0.07" height low insertion loss, 0.8 dB typ.
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Original
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SBA-2-22
EA-8092
SBA-2-22
25600
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PDF
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Untitled
Abstract: No abstract text available
Text: BLUE CELL Surface CELL™ Mount Power Splitter/Combiner 2 Way-0° 50Ω SBA-2-20 1800 to 2200 MHz Features Maximum Ratings Operating Temperature -40°C to 85°C Storage Temperature -55°C to 100°C RF Power 33 dBm max. l l l low profile, 0.07" height low insertion loss, 0.5 dB typ.
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Original
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SBA-2-20
SBA-2-20
M71460
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PDF
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Untitled
Abstract: No abstract text available
Text: TEN •i 8 TOSHIBA 2SK3441 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3441 DC-DC Converter Relay Drive and Motor Drive Applications Unit: mm • • • • Low drain-source ON resistance: Rpg (on) = 4 .5 m£2 (typ.) High forward transfer admittance: | Yfs I = 80 S (typ.)
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OCR Scan
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2SK3441
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PDF
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10DC
Abstract: TPIC6B259
Text: TPIC6B259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS030 -A P R IL 1994 • Low r D s 0 n • • . 5 £ 2 Typical • Avalanche Energy . . . 30 mJ • Eight Power DMOS-Transistor Outputs of 150-mA Continuous Current • • • • D w OR N p a c k a g e
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OCR Scan
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TPIC6B259
SLIS030-APRIL
150-mA
500-mA
6Rbl724
10DC
TPIC6B259
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PDF
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