E13009a
Abstract: 13009a HMJE13009A 13009a TRANSISTOR mje13009a transistor 13009a
Text: HI-SINCERITY Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2006.07.04 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009A 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009A is designed for high-voltage, high-speed power switching
|
Original
|
HE200206
HMJE13009A
HMJE13009A
O-220AB
120ns
183oC
217oC
260oC
10sec
E13009a
13009a
13009a TRANSISTOR
mje13009a
transistor 13009a
|
PDF
|
transistor MJ 13009
Abstract: E13009 j 13009 to247 e 13009 d E 13009 D 13009 K mj 13009 13009 to-3p transistor E 13009 j 13009
Text: HI-SINCERITY Spec. No. : HR200202 Issued Date : 2005.10.01 Revised Date : 2005.10.19 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009R 12 Ampere NPN Silicon Power Transistor Description The HMJE13009R is designed for high-voltage, high-speed power switching
|
Original
|
HR200202
HMJE13009R
HMJE13009R
O-247
120ns
Collector-Emitt120
183oC
217oC
260oC
transistor MJ 13009
E13009
j 13009 to247
e 13009 d
E 13009
D 13009 K
mj 13009
13009 to-3p
transistor E 13009
j 13009
|
PDF
|
HMJE13009AR
Abstract: E13009a 13009a TRANSISTOR MJE13009A 13009a E 13009A NPN Transistor 400v to247
Text: HI-SINCERITY Spec. No. : HR200502 Issued Date : 2005.10.01 Revised Date : 2005.10.19 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009AR 12 Ampere NPN Silicon Power Transistor Description The HMJE13009AR is designed for high-voltage, high-speed power switching
|
Original
|
HR200502
HMJE13009AR
HMJE13009AR
O-247
120ns
Collector-Emi20
183oC
217oC
260oC
E13009a
13009a TRANSISTOR
MJE13009A
13009a
E 13009A
NPN Transistor 400v to247
|
PDF
|
13009a
Abstract: E13009a HMJE13009A MJE13009A
Text: HI-SINCERITY Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2005.08.15 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009A 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009A is designed for high-voltage, high-speed power switching
|
Original
|
HE200206
HMJE13009A
HMJE13009A
O-220AB
120ns
183oC
217oC
260oC
13009a
E13009a
MJE13009A
|
PDF
|
E 13009
Abstract: transistor MJ 13009 e13009 transistor E 13009 mj 13009 transistor d 13009 D 13009 K J 13009 - 2 tr 13009 j 13009
Text: HI-SINCERITY Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2005.08.16 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and
|
Original
|
HE200206
HMJE13009
HMJE13009
O-220AB
120ns
183oC
217oC
260oC
E 13009
transistor MJ 13009
e13009
transistor E 13009
mj 13009
transistor d 13009
D 13009 K
J 13009 - 2
tr 13009
j 13009
|
PDF
|
Op 13012
Abstract: 3790A mj 13008 mj 13009 gelijkrichter
Text: Standaarden en reglementen Technische informatie EMC Elektromagnetische compatibiliteit EMC Algemeen Het doel van de overwegingen bij elektromagnetische compatibiliteit is de invloed van elektromagnetische fenomenen op onderdelen, toestellen of systemen en op levende of inerte materialen te verminderen of te vermijden.
|
Original
|
|
PDF
|
High Voltage Bus-bars
Abstract: mj 13007 mj 13008 3790A C37-90 13009T
Text: Directives & Standards Technical Information EMC Electromagnetic Compatibility EMC General The aim of electromagnetic compatibility considerations is to avoid or minimize the influence of electromagnetic phenomena on a device, equipment or system and on living or
|
Original
|
|
PDF
|
mj 13007
Abstract: mj 13008
Text: Normen Technische Informationen EMV Elektromagnetische Verträglichkeit EMV Allgemeines Sinn und Zweck von Betrachtungen zur elektromagnetischen Verträglichkeit ist die Vermeidung oder zumindest die Minimierung von elektromagnetischen Einflüssen auf Geräte, Einrichtungen oder Systeme, sowie auf Leben und
|
Original
|
|
PDF
|
normes cable
Abstract: 13007T mj 13008 EFFET DE HALL 13007 T Se 13007 PAR/PDS3S140 PAR/DMG9N65CT PAR/AP13005 PAR/DF06S
Text: Normes Informations techniques CEM Compatibilité électromagnétique CEM Informations générales La considération de la compatibilité électromagnétique sert à éviter ou du moins à minimiser les effets électromagnétiques, aussi bien sur des appareils, installations ou systèmes que sur des matières vivantes ou inertes. Les méthodes adéquates de mesure et de test, ainsi que les valeurs
|
Original
|
|
PDF
|
transistor C3866
Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)
|
Original
|
|
PDF
|
mj 1504 transistor datasheet
Abstract: EPCOS k 3650 k its 31567 data sheet mj 1504 mj 1504 transistor EPCOS 3550 transistor c 6073 30639 jis h 8502 MJ 1502 S
Text: NTC thermistors for temperature measurement SMD NTC thermistors with nickel barrier termination, case size 0603 Series/Type: B573*V2 Date: June 2008 EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures hereto and the
|
Original
|
|
PDF
|
mj 13007
Abstract: mj 13005 13005 A mj 13009 13005a 13009 13007 13005 13005 2 MJE13005A
Text: pxfl f\ second source devices produits seconde source BUX BUX MJE MJE MJE MJE MJE M JE MJE MJE MJE Type v CEO V VCEX (V) 84 85 13004 13005 13005 A 13006 13007 13007 A 13008 13009 13009 A 400 450 300 400 400 300 400 400 300 400 400 800 1000 600 700 850 600
|
OCR Scan
|
O-220
BUW35
mj 13007
mj 13005
13005 A
mj 13009
13005a
13009
13007
13005
13005 2
MJE13005A
|
PDF
|
ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
|
OCR Scan
|
CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
|
PDF
|
j 13009
Abstract: J 13009 - 2 e 13009 f mj 13009 E 13009 L p 13009 D 13009 K 13009R
Text: ± 0 N m ü re ID Is- ; / l \ t * *4 CUL a. O * id OQ z -D z ^ Í7-* ; : * ' ^ <? 94V -0) ^ & 7 b * 'J ^ V ' S> 3 C IR C U IT *7 6 6 -^- - f a -fe . J» . : . ^ ^ IT : » H l . N O .1) A * * ^ ^7 ^ ^ e in . 3 /aml¿X _L<iO — 'V =*c t ^ » Ä i S I 5 0 . 3 pm ü i,_ b < ^ .^ r> ^ =V , 8*P*|$1 p.miiX J^ co * ¥ - æ ^
|
OCR Scan
|
J-12583
30-JAN
j 13009
J 13009 - 2
e 13009 f
mj 13009
E 13009 L
p 13009
D 13009 K
13009R
|
PDF
|
|
UAA2001
Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
Text: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re
|
OCR Scan
|
0HF40
0HF60
0HF80
6FP10
6F100
70HF10
UAA2001
MC8500
micromodule m68mm19
1N9388
74ALS643
2N6058
MC145026
2N5160 MOTOROLA
MC3340 equivalent
pn3402
|
PDF
|
e13009
Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and
|
OCR Scan
|
MJE13005*
e13009
E13009 TRANSISTOR equivalent
4000w audio amplifier
JE-I3009
4000w inverter circuit
4000w power amplifier
equivalent of transistor mje13007
mje13009 equivalent
125VDC to 24 VDC regulator circuit
Motorola Bipolar Power Transistor Data
|
PDF
|
TRANSISTOR tip122 CHN 949
Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.
|
OCR Scan
|
38v01
TRANSISTOR tip122 CHN 949
E2955T
BD706
TU F 13003
13003 Transistor NPN Power TO 126
transistor E2955T
construction linear amplifier 2sc1945
LA 4301
8d679
transistor bf 175
|
PDF
|
JRC 45600
Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES
|
OCR Scan
|
ZOP033
ZOP035
ZOP036
ZOP037
ZOP038
ZOP039
ZOP045
ZOP042
ZOP041
ZOP043
JRC 45600
YD 803 SGS
45600 JRC
TDA 7277
TDA 5072
krp power source sps 6360
2904 JRC
Sony
SHA T90 SA
philips HFE 4541
|
PDF
|
thyristor TAG 8506
Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y
|
OCR Scan
|
11PM104
thyristor TAG 8506
nais inverter vf 7f operation manual
922AA1Y-A4P
optek A400 817
Sprague 513D
sprague 926c
Sprague 195P
Rapa relay 12vdc
triac tag 8948
Mascot 719
|
PDF
|
hall marking code A04
Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
Text: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”
|
OCR Scan
|
2PHX14226-31
hall marking code A04
M143206EVK
differences uc3842a uc3842b
toshiba satellite laptop battery pinout
2N3773 audio amplifier diagram
toshiba laptop battery pack pinout
BC413
motorola transistor sj 5812
M68HC705X16
ABB inverter motor fault code
|
PDF
|
EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
|
OCR Scan
|
|
PDF
|