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    MJ 13007 Search Results

    MJ 13007 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D13007VF10V Renesas Electronics Corporation 16-bit Microcontrollers with Embedded 512KB Flash Microcomputer (Non Promotion) Visit Renesas Electronics Corporation
    D13007VFI10V Renesas Electronics Corporation 16-bit Microcontrollers with Embedded 512KB Flash Microcomputer (Non Promotion) Visit Renesas Electronics Corporation
    HD6413007VF13V Renesas Electronics Corporation 16-bit Microcontrollers with Embedded 512KB Flash Microcomputer (Non Promotion) Visit Renesas Electronics Corporation
    HD6413007VFI13V Renesas Electronics Corporation 16-bit Microcontrollers with Embedded 512KB Flash Microcomputer (Non Promotion) Visit Renesas Electronics Corporation
    HD6413007FI20V Renesas Electronics Corporation 16-bit Microcontrollers with Embedded 512KB Flash Microcomputer (Non Promotion) Visit Renesas Electronics Corporation
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    MJ 13007 Price and Stock

    onsemi MJE13007G

    Bipolar Transistors - BJT 8A 400V 80W NPN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MJE13007G 3,537
    • 1 $1.36
    • 10 $0.682
    • 100 $0.638
    • 1000 $0.551
    • 10000 $0.551
    Buy Now

    MJ 13007 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    E 13007

    Abstract: transistor MJ 13007 E13007 mj 13007 sec 13007 transistor E 13007-c sec E 13007 D 13007 K transistor transistor E 13007 transistor d 13007
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE200207 Issued Date : 1993.04.12 Revised Date : 2003.07.21 Page No. : 1/4 HMJE13007 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


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    PDF HE200207 HMJE13007 O-220 E 13007 transistor MJ 13007 E13007 mj 13007 sec 13007 transistor E 13007-c sec E 13007 D 13007 K transistor transistor E 13007 transistor d 13007

    E 13007

    Abstract: E13007 mj 13007 transistor MJ 13007 sec 13007 transistor E 13007 transistor E 13007-c transistor m 13007 transistor d 13007 13007 applications
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE200207 Issued Date : 1993.04.12 Revised Date : 2002.08.14 Page No. : 1/4 HMJE13007 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


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    PDF HE200207 HMJE13007 O-220 E 13007 E13007 mj 13007 transistor MJ 13007 sec 13007 transistor E 13007 transistor E 13007-c transistor m 13007 transistor d 13007 13007 applications

    TRANSISTOR 13007a

    Abstract: 13007A HMJE13007A
    Text: HI-SINCERITY Spec. No. : HE200501 Issued Date : 2005.06.01 Revised Date : 2007.03.06 Page No. : 1/5 MICROELECTRONICS CORP. HMJE13007A NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


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    PDF HE200501 HMJE13007A O-220 10sec TRANSISTOR 13007a 13007A HMJE13007A

    sec 13007

    Abstract: E 13007 sec E 13007 SEC E 13007 - 2 e13007 mj 13007 transistor MJ 13007 transistor E 13007-c j 13007 HE200207
    Text: HI-SINCERITY Spec. No. : HE200207 Issued Date : 1993.04.12 Revised Date : 2007.03.06 Page No. : 1/5 MICROELECTRONICS CORP. HMJE13007 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


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    PDF HE200207 HMJE13007 O-220 10sec sec 13007 E 13007 sec E 13007 SEC E 13007 - 2 e13007 mj 13007 transistor MJ 13007 transistor E 13007-c j 13007 HE200207

    TRANSISTOR 13007a

    Abstract: 13007A E13007A 13007a power transistor HMJE13007A
    Text: HI-SINCERITY Spec. No. : HE200501 Issued Date : 2005.06.01 Revised Date : 2006.07.04 Page No. : 1/5 MICROELECTRONICS CORP. HMJE13007A NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


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    PDF HE200501 HMJE13007A O-220 183oC 217oC 260oC 10sec TRANSISTOR 13007a 13007A E13007A 13007a power transistor HMJE13007A

    TRANSISTOR 13007a

    Abstract: 13007A E13007A 13007a power transistor HMJE13007A MJ 13007A
    Text: HI-SINCERITY Spec. No. : HE200501 Issued Date : 2005.06.01 Revised Date : 2005.06.29 Page No. : 1/5 MICROELECTRONICS CORP. HMJE13007A NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


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    PDF HE200501 HMJE13007A O-220 Di120 183oC 217oC 260oC TRANSISTOR 13007a 13007A E13007A 13007a power transistor HMJE13007A MJ 13007A

    Op 13012

    Abstract: 3790A mj 13008 mj 13009 gelijkrichter
    Text: Standaarden en reglementen Technische informatie EMC Elektromagnetische compatibiliteit EMC Algemeen Het doel van de overwegingen bij elektromagnetische compatibiliteit is de invloed van elektromagnetische fenomenen op onderdelen, toestellen of systemen en op levende of inerte materialen te verminderen of te vermijden.


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    High Voltage Bus-bars

    Abstract: mj 13007 mj 13008 3790A C37-90 13009T
    Text: Directives & Standards Technical Information EMC Electromagnetic Compatibility EMC General The aim of electromagnetic compatibility considerations is to avoid or minimize the influence of electromagnetic phenomena on a device, equipment or system and on living or


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    mj 13007

    Abstract: mj 13008
    Text: Normen Technische Informationen EMV Elektromagnetische Verträglichkeit EMV Allgemeines Sinn und Zweck von Betrachtungen zur elektromagnetischen Verträglichkeit ist die Vermeidung oder zumindest die Minimierung von elektromagnetischen Einflüssen auf Geräte, Einrichtungen oder Systeme, sowie auf Leben und


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    normes cable

    Abstract: 13007T mj 13008 EFFET DE HALL 13007 T Se 13007 PAR/PDS3S140 PAR/DMG9N65CT PAR/AP13005 PAR/DF06S
    Text: Normes Informations techniques CEM Compatibilité électromagnétique CEM Informations générales La considération de la compatibilité électromagnétique sert à éviter ou du moins à minimiser les effets électromagnétiques, aussi bien sur des appareils, installations ou systèmes que sur des matières vivantes ou inertes. Les méthodes adéquates de mesure et de test, ainsi que les valeurs


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    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    220v AC voltage stabilizer schematic diagram

    Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122


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    PDF P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor

    mj 13007

    Abstract: mj 13005 13005 A mj 13009 13005a 13009 13007 13005 13005 2 MJE13005A
    Text: pxfl f\ second source devices produits seconde source BUX BUX MJE MJE MJE MJE MJE M JE MJE MJE MJE Type v CEO V VCEX (V) 84 85 13004 13005 13005 A 13006 13007 13007 A 13008 13009 13009 A 400 450 300 400 400 300 400 400 300 400 400 800 1000 600 700 850 600


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    PDF O-220 BUW35 mj 13007 mj 13005 13005 A mj 13009 13005a 13009 13007 13005 13005 2 MJE13005A

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    8b804

    Abstract: en 13007 E 13007 j 13007 U600 SW02 U4255BM U4256BM U4256BM-MFS U4256BM-MFSG3
    Text: Tem ic U4256BM S e m i c o n d u c t o r s Frequency Synthesizer for Radio Tuning Description The U4256BM is a synthesizer IC for FM receiver and an AM up-convertion system in BICMOS technology. Together with the AM/FM IC U4255BM, it performs a complete AM/FM car radio front end, which is


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    PDF u4256bm U4256BM U4255BM, 16-bit 20-May-99 SS020 8b804 en 13007 E 13007 j 13007 U600 SW02 U4255BM U4256BM-MFS U4256BM-MFSG3

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    2M3055

    Abstract: B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908
    Text: G E N E R A L P U R P O S E T R A N S IS T O R S Comple­ Type mentary V CE0 V CB0 V (V) 'c (A) hFE * 'c (A) V CE V CEsat (V) (V) 9 'c (A) 'b R 1hj-c (mA) fC/W) 1.5 1.17 1.17 1.17 1.17 1399 1047 1047 1053 1053 T O -3 T O -3 T O -39 T O -3 T O -3 1047 1047


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    PDF 2N3055 2N3715 2N3716 2N3771 2M3772 2N3791 2N3792 2N4234 2N4398 2N4399 2M3055 B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908

    TRANSISTOR tip122 CHN 949

    Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
    Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.


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    PDF 38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    znr SF 471

    Abstract: nvp 1004 kh 102m 54HC74 ESFC ZTN 33 ITT il-z clip mt 13004 TN-101 ZNR 391 46
    Text: HH-K-.18510/653A I5 JANUAPT 86 S U PT R 'SIü T íir K !L - « - 3 6 £ J0 /t£ 3 31 March 1980 M ILITARY SPE C I” 1CAT I OH M ICROCIRCUITS, D IG IT A L, HIGH SPEEO, CMOS F L IP - F L O P S , MONOLITHIC S IU C O II. PO SIT IV E LOGIC T h is s p e c i f ic a t io n i s


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    PDF 0/653A L-M-36 10/fc MIl-N-36510, MIL-M-36510/653A znr SF 471 nvp 1004 kh 102m 54HC74 ESFC ZTN 33 ITT il-z clip mt 13004 TN-101 ZNR 391 46

    c828

    Abstract: tr c828 c877 ED6A cm 480b ed7a c828 as time relay iwatt marking EB 13007 c828 equivalent
    Text: I I MI L-M-38510/480B 14 A p ril 1983 SUPERSEDING M I L - H - 3 8 5 10 /4 80 A 4 September 1981 MILITARY SP ECI FI C AT I ON MI CROCI RCUITS, D I G I T A L , MONOLITHIC 8 N-CHANNEL, SI LI CON GATE - B I T MICROPROCESSOR T h i s s p e c i f i c a t i o n i s a ppr ove d f o r us e by a l l


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    PDF MIL-M-38510/480B MIL-H-38510/480A MIL-M-38510. Z-80A Z-80B MIL-M-38510/480B c828 tr c828 c877 ED6A cm 480b ed7a c828 as time relay iwatt marking EB 13007 c828 equivalent

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    TRANSISTOR PNP B1443

    Abstract: B1565 transistor B1274 transistor 13001 s 6d B1273 transistor B0615 DIODE Transistor B1203 transistor b1274 transistor b1134 transistor B1204
    Text: Version 1.7 Produced in June 1998 Sharp Programmable Controller New Satellite JW20H Programming Manual * Ladder instruction version 04000 F — 44 O I F — 08 1 O C T 100 09000 0000 09000 F — 00 X F E R □ F — 05 D M P X F — 63 IN C 09000 09000 09000


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    PDF JW20H JW20H JW20H. JW20H, F-62w Fc12w TRANSISTOR PNP B1443 B1565 transistor B1274 transistor 13001 s 6d B1273 transistor B0615 DIODE Transistor B1203 transistor b1274 transistor b1134 transistor B1204