Gunn Diode
Abstract: Microwave Silicon Detector Diode DW9248 microwave waveguide Marconi gunn Silicon Detector UHF diode varactor diode filter varactor
Text: Product List TYPE No. DESCRIPTION DA1304 DA1307 MILLIMETRE WAVE BALANCED MIXER 34.0 to 34.4GHz BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER
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DA1304
DA1307
DA1321
DA1321-1
DA1338
DA1338-1
DA1338-2
DA1338-3
DA1349-2
DA1349-4
Gunn Diode
Microwave Silicon Detector Diode
DW9248
microwave waveguide
Marconi gunn
Silicon Detector
UHF diode
varactor diode filter
varactor
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Z070
Abstract: 1545A 1450m High Signal Level Upconverting Mixers LT5578
Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 1545A-X 400MHZ TO 2.7GHZ HIGH LINEARITY UPCONVERTING MIXER LT5578 DESCRIPTION Demonstration circuit 1545A-x is a high linearity upconverting mixer featuring the LT5578. The LT 5578 is a high performance upconverting mixer
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545A-X
400MHZ
LT5578
545A-x
LT5578.
LT5578
Z070
1545A
1450m
High Signal Level Upconverting Mixers
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LT5579
Abstract: High Signal Level Upconverting Mixers Z070
Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 1233A-X 1.5GHZ TO 3.8GHZ HIGH LINEARITY UPCONVERTING MIXER LT5579 DESCRIPTION Demonstration circuit 1233A-x is a high linearity upconverting mixer featuring the LT5579. The LT 5579 is a high performance upconverting mixer
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233A-X
LT5579
233A-x
LT5579.
LT5579
High Signal Level Upconverting Mixers
Z070
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1N831
Abstract: 1N832A "Point Contact Diodes" Silicon Point Contact Mixer Diodes
Text: Point Contact Diodes Point Contact Diodes: 1N Series X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications through X-Band. These diodes employ epitaxial silicon optimized for low noise figure and
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1N831
1N831A
1N831B
1N831C
1N832
1N832A
1N832B
1N832C
1N831
1N832A
"Point Contact Diodes"
Silicon Point Contact Mixer Diodes
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Untitled
Abstract: No abstract text available
Text: GEC PLES S EY S l Mi l . O % I> l <; I O K s DC1574/76/77 SILICON SCHOTTKY X-BAND WAVEGUIDE LOW DRIVE MIXER DIODES DESCRIPTION APPLICATIONS The DC1570 series are medium barrier height silicon mixer diodes intended primarily for operation as low drive mixer
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DC1574/76/77
DC1570
300mW
150pA
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Surface Mount RF Schottky Barrier Diodes
Abstract: No abstract text available
Text: Silicon Schottky Diodes High performance and high reliability RF and microwave Schottky diodes for your demanding mixer and detector applications New 0201 Surface Mount Silicon — for Mixer Detectors Through K Band .50 x .25 x .30 mm. VB @ 10 µA V CT @ 0.15 V
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SMS7630-093
SMS7621-096
DMF2820
DME2127
DMJ2823
DMF2821
DME2957
DMJ2777
DMF2344
DME2333
Surface Mount RF Schottky Barrier Diodes
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Untitled
Abstract: No abstract text available
Text: 37bflSS2 OGIÔHfiû MSI « P L S B Si GEC PLE SS EY SEMICONDUCTORS DC1575/78 SILICON SCHOTTKY X-BAND MICROSTRIP LOW DRIVE MIXER DIODES DESCRIPTION APPLICATIONS The DC1570 series are medium barrier height silicon mixer diodes intended primarily for operation as low drive mixer
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37bflSS2
DC1575/78
DC1570
300mW
200mV
DC1575
DC1578
150jiA
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Untitled
Abstract: No abstract text available
Text: 37bñSES ODIAMMO GOT * P L S B Si GE C P L E S S E Y SEMICONDUCTORS DC1574/76/77 SILICON SCHOTTKY X-BAND WAVEGUIDE LOW DRIVE MIXER DIODES DESCRIPTION APPLICATIONS The DC1570 series are medium barrier height silicon mixer diodes intended primarily for operation as low drive mixer
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DC1574/76/77
DC1570
300mW
DC1574
DC1577
DC1576
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HMJ7
Abstract: CATV HEADEND JESD22-A114
Text: HMJ7 The Communications Edge TM Product Information High Dynamic Range FET Mixer Product Features Product Description x +34 dBm IIP3 Functional Diagram The HMJ7 is a high dynamic range GaAs FET mixer. This active broadband mixer realizes a typical third order
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22-pin
JESD22-C101
1-800-WJ1-4401
HMJ7
CATV HEADEND
JESD22-A114
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JESD22-A114
Abstract: FET GAAS marking a HMJ7-1
Text: HMJ7-1 The Communications Edge TM Product Information High Dynamic Range FET Mixer Product Features Product Description x Greater than +34 dBm IIP3 The HMJ7-1 is a high dynamic range GaAs FET mixer. This active broadband mixer realizes a typical third order
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JESD22-C101
1-800-WJ1-4401
JESD22-A114
FET GAAS marking a
HMJ7-1
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Untitled
Abstract: No abstract text available
Text: GE C P L E S S E Y S 1 M 1 i O N I U t: I O R s DC1575/78 SILICON SCHOTTKY X-BAND MICROSTRIP LOW DRIVE MIXER DIODES DESCRIPTION APPLICATIONS The DC1570 series are medium barrier height silicon mixer diodes intended primarily for operation as low drive mixer
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DC1575/78
DC1570
300mW
200mV
DC1575
DC1578
150pA
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W-band
Abstract: low power dc mixer CHM2177
Text: CHM2177 W-band I/Q Mixer GaAs Monolithic Microwave IC Description LO Main Features Wide LO and RF frequency range IF from DC to 800MHz Low LO input power High LO/RF isolation Low amplitude and phase unbalance Chip size 3.07 x 1.62 x 0.1mm RF I Q I/Q mixer block diagram
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CHM2177
800MHz
CHM2177
DSCHM21778093
W-band
low power dc mixer
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w-band
Abstract: No abstract text available
Text: CHM2178 W-band Double Mixer GaAs Monolithic Microwave IC Description LO Main Features • Wide LO and RF frequency range ■ IF from DC to 800 MHz ■ Low LO input power ■ High LO/RF isolation ■ Chip size 2.07 x 1.87 x 0.1mm RF1 RF2 IF2 IF1 Double mixer block diagram
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CHM2178
CHM2178
DSCHM21788093
w-band
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Untitled
Abstract: No abstract text available
Text: P^pJGEC PLESSEY DS3330-1 2 DA1321/21-1 C & X BAND DOUBLE BALANCED MIXERS The DA1321 is a broadband double balanced mixer for use from 4.0 to 11.0GHz using gallium arsenide schottky barrier diodes. The small size and light weight with a tow conversion loss make this an Ideal C through X band mixer. The DA1321
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DS3330-1
DA1321/21-1
DA1321
DA1321
10dBm
DA1321-1
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CS100
Abstract: cs-100 1N415C 1N23 diode 1N23B 1N23 1N21E 1N416C cs-101 1N21C
Text: Point Contact Diodes: 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed
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CS100
CS101
CS100
cs-100
1N415C
1N23 diode
1N23B
1N23
1N21E
1N416C
cs-101
1N21C
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Untitled
Abstract: No abstract text available
Text: GEC PLESSEY CT3510-1.2 DC1301/01C & DC1332/33 GaAs SCHOTTKY X-BAND MICROSTRIP MIXER DIODES These diodes are used in mixer applications requiring a better noise figure than can be acheived with silicon diodes and as sensitive broadband detectors at high microwave
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CT3510-1
DC1301/01C
DC1332/33
200mW
DC1301
DC1301C
DC1332
DC1333
100pA
600mV
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Untitled
Abstract: No abstract text available
Text: PStH G E C P L E S S E Y DS3771-1.2 DA1351 1361 & 1371 X BAND BALANCED MIXER The DA1351 is a thin film integrated circuit balanced mixer with 1000MHz bandwidth in X Band. The standard unit uses DC1301 GaAs Schottky diodes providing a good v.s.w.r. and noise figure. The outputs from both diodes are provided so that
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DS3771-1
DA1351
DA1351
1000MHz
DC1301
375GHz;
60MHz;
250mW
10OmW
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1n415c
Abstract: 1N23G 1N21C 1N21D 1N21E 1N21F 1N21G 1N21WE 1N416G 1N416C
Text: Point Con tact Diodes: 1 N Series S - X Band Point Contact Mixer Diodes Description This MicroM etrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed
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CS100
1N23F
1N23G
1N23WG
1N23H
CS101
1N415C
1n415c
1N23G
1N21C
1N21D
1N21E
1N21F
1N21G
1N21WE
1N416G
1N416C
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Untitled
Abstract: No abstract text available
Text: HSCH6312 SCHOTTKY MIXER/DETECTOR DIODE DESCRIPTION: The HSCH6312 is a Hermatically Sealed , Silicon Medium Barrier Schottky Mixer/Detector Diode Designed for X-Band Operation. PACKAGE STYLE 860 MAXIMUM RATINGS I 20 mA V 4.0 V PDISS 150 mW @ TC = 25 OC TJ -65 OC to +175 OC
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HSCH6312
HSCH6312
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1N23 diode
Abstract: 1N23C 1N23B 1N21C 1N23A case cs101 1N415C diode 1N23WG 1N415H CS100
Text: Point Contact Diodes Point Contact Diodes: 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand. Each device in this series is in a cartridge package specially designed
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CS100
CS101
1N23 diode
1N23C
1N23B
1N21C
1N23A
case cs101
1N415C diode
1N23WG
1N415H
CS100
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vari-l dbm
Abstract: vari-l company DBM-600 vari-l mixer 107D MIL-C-26074 MIL-G45204 107D8 Vari-L Company dbm
Text: ~ DBM-600 Subminiature Flatpack Double Balanced Mixer .25-5.0 GHz DESCRIPTION DBM-600 is a high performance flatpack double balanced mixer that offers excellent performance to 5 GHz. High uniform isolation, wide bandwidth and X port response to 3 GHz make the DBM-600 suitable for
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DBM-600
DBM-600
In07D
MIL-STD-1276,
MIL-G45204.
MIL-C-26074,
MIL-STD-1276
F15-68,
vari-l dbm
vari-l company
vari-l mixer
107D
MIL-C-26074
MIL-G45204
107D8
Vari-L Company dbm
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Untitled
Abstract: No abstract text available
Text: P H t i GEC P L E S S E Y DC1302/04 & DC1330 GaAs SCHOTTKY X-BAND WAVEGUIDE MIXER DIODES These diodes are used in mixer applications requiring a better noise figure than can be acheived with silicon diodes and as sensitive broadband detectors at high microwave
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DC1302/04
DC1330
100pA
600mV
1304C
375GHz
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Untitled
Abstract: No abstract text available
Text: RFFC5071A/2A Preliminary RFFC5071A/2 A Wideband Synthesizer/VCO with Integrated 6GHz Mixer WIDEBAND SYNTHESIZER/VCO WITH INTEGRATED 6GHz MIXER Preliminary Package: QFN, 32-Pin, 5mm x 5mm RFFC5071A RFFC5072A Features 85MHz to 4200MHz LO Frequency Range
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RFFC5071A/2A
RFFC5071A/2
32-Pin,
RFFC5071A
RFFC5072A
85MHz
4200MHz
30MHz
6000MHz
23dBm
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Untitled
Abstract: No abstract text available
Text: DBM-1200 DBM-1200 Miniature Connectorized Double Balanced Mixer 0.5GHz to 13.0GHz The DBM-1200 is a high performance miniature SMA connectorized double balanced mixer, using precision-matched beam-lead Schottky barrier diodes. The L and R ports have a bandwidth of 0.5GHz to 13.0GHz while the X port
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DBM-1200
DBM-1200
005GHz
MIL-C-39012;
MIL-G-45204,
DS131007
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