power electronic transistor
Abstract: MITSUBISHI SMALL SIGNAL DIODE micro transistor
Text: Small Mitsubishi Small Signal Transistors • Diodes Classification Small Signal Transistors' □lodes - Consumer Electronic Equipments - High-Density Mounting Equipments - Transistor with Register- - - High-Density Mounting Type Micro Type Frame Type
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MC932
Abstract: ma7050 M32 diode lf 355 audio Diode Marking diode mc932
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC932 FOR GENERAL SWITCHING APPLICATION SILICON EPITAXIAL TYPE(SERIES TYPE) DESCRIPTION Mitsubishi MC932 is a small outline plastic seal silicon epitaxial type double Unit:mm OUTLINE DRAWING 4.3MAX diode,designed for general switching application.
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MC932
MC932
ma7050
M32 diode
lf 355 audio
Diode Marking
diode mc932
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MC911
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL DIODE MC911 FOR HIGH SPEED SWITCHING APPLICATION _ SILICON EPITAXIAL TVPE COMMON ANODE) DESCRIPTION Mitsubishi M C 9 1 1 is a small outline plastic seal type silicon epitaxial type double OUTLINE DRAWING unit
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MC911
MC911
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MC921
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL DIODE MC921 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE COMMON CATHODE) DESCRIPTION Mitsubishi MC921 is a small outline plastic seal type silicon epitaxial type double OUTLINE DRAWING diode,especially designed for high speed switching application.
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MC921
MC921
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diode marking YG
Abstract: 2SC3728 MITSUBISHI LOT NO transistor cr marking
Text: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SC3728 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3728 Is a silicon N PN epitaxial type transistor.There is a built-in zener diode between collector to emitter.
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2SC3728
2SC3728
150to800
500mW
100mA
-10mA
diode marking YG
MITSUBISHI LOT NO
transistor cr marking
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MC2833
Abstract: mc2833 application SC-59 marking 1F MC2833 ic
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2833 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE DESCRIPTION Mitsubishi MC2833 is a super mini package plastic seal type silicon epitaxial Unit:mm OUTLINE DRAWING type diode,especially designed for high speed switching application.
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MC2833
MC2833
mc2833 application
SC-59 marking 1F
MC2833 ic
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diode 828
Abstract: 828 diode
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2842 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE DESCRIPTION Mitsubishi M C2842 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING type diode,especially designed for high speed switching application.
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MC2842
C2842
SC-70
diode 828
828 diode
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2CR3
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2843 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE DESCRIPTION Mitsubishi M C2843 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING type diode,especially designed for high speed switching application.
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MC2843
C2843
2CR3
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MITSUBISHI SMALL SIGNAL DIODE
Abstract: 50MHZ MC302
Text: MITSUBISHI DISCRETE SC blE D • bSMIflET D01S3Ti TDO « M I T S ANTENNA SW ITCH MC302 RF SMALL SIGNAL SWITCHING DESCRIPTION OUTLINE DRAWING The MC302 diode is employing a high reliability glass construction, designed for R F small signal switching in V H F UHF.
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D01S3TÃ
MC302
MC302
D0154Q1
MITSUBISHI SMALL SIGNAL DIODE
50MHZ
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z107
Abstract: marking mitsubishi
Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL DIODE MC2835 FOR GENERAL SWITCHING APPLICATION SIUCON EPITAXIAL TYPE SERIES TYPE) DESCRIPTION Mitsubishi MC2835 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING type double diode.it is designed for general switching application.
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MC2835
MC2835
z107
marking mitsubishi
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Silicon PIN diode high speed
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2841 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE DESCRIPTION Mitsubishi MC2841 is a super mini package plastic seal type silicon epitaxial Unitrmm OUTLINE DRAWING 2.1 ±0.2 type diode.especially designed for high speed switching application.
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MC2841
MC2841
Silicon PIN diode high speed
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LT 236 diode
Abstract: MC2840
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2840 FOR GENERAL SWITCHING APPLICATION SILICON EPITAXIAL TYPE(SERIES TYPE) DESCRIPTION Mitsubishi M C2840 is a super mini package plastic seal type silicon epitaxial Unitmm OUTLINE DRAWING type double diode.it is designed for general switching application.
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MC2840
C2840
SC-59
O-236
LT 236 diode
MC2840
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mc2850
Abstract: 1F marking
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2850 FOR GENERAL SWITCHING APPLICATION _ SILICON EPITAXIAL TYPE(SERIES TYPE) DESCRIPTION Mitsubishi MC2850 is a super mirti package plastic seal type silicon epitaxial OUTLINE DRAWING type double diode,it is designed for general switching application.
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MC2850
MC2850
SC-70
1F marking
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2834 FOR HIGH SPEED SWITCHING APPLICATION SIUCON EPITAXIAL TYPE DESCRIPTION Mitsubishi MC2834 is a super mini package plastic seal type silicon epitaxial Unit: mm OUTLINE DRAWING type diode,especially designed for high speed switching application.
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MC2834
MC2834
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MC283-1
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL DIODE MC2831 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE DESCRIPTION Mitsubishi MC2831 is a super mini package plastic seal type silicon epitaxial Unitimm OUTLINE DRAWING 2-5 -0.3 type diode,especially designed for high speed switching application.
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MC2831
MC2831
MC283-1
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2844 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE DESCRIPTION Mitsubishi MC2844 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING . ± 0.2 2 1 type diode,especially designed for high speed switching application.
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MC2844
MC2844
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marking mitsubishi
Abstract: MC2846 UJ DIODE MARKING
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2846 FOR HIGH SPEED SWITCHING APPLICATION _SILICON EPITAXIAL TYPE(COMMON ANODE) DESCRIPTION Mitsubishi MC2846 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING 2.1 type double diode,especially designed for high speed switching application.
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MC2846
MC2846
marking mitsubishi
UJ DIODE MARKING
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2845 FOR GENERAL SWITCHING APPLICATION SILICON EPITAXIAL TYPE(SERIES TYPE) DESCRIPTION Mitsubishi MC2845 is a super mini package plastic seal type silicon epitaxial Unittmen OUTLINE DRAWING 2 . 1+ 0.2 type double diode.it is designed for general switching application.
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MC2845
MC2845
SC-70
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MC2838
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL DIODE MC2838 FOR HIGH SPEED SWITCHING APPLICATION _ SILICON EPITAXIAL TYPE COMMON ANODE) DESCRIPTION Mitsubishi MC2838 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING Unitim m type double diode,especially designed for high speed switching application.
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MC2838
MC2838
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MC103A
Abstract: TIC 103a 03A Diode
Text: MITSUBISHI DISCRETE SC blE » • QGISB'iS 3bS « H I T S ANTENNA SWITCH MC103A RF S M A L L SIGNAL SWITCHING DESCRIPTION O UTLIN E DRAWING The M C 1 03A diode is em ploying a high reliability glass construction, designed for R F small signal switching in
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MC103A
MC103A
TIC 103a
03A Diode
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MC804
Abstract: MITSUBISHI SMALL SIGNAL DIODE
Text: MITSUBISHI DISCRETE SC blE D bEHTflS1! 001S4D2 325 • MIT5 ANTENNA SWITCH MC804 RF SMALL SIGNAL SWITCHING DESCRIPTION OUTLINE DRAWING Th e M C 8 0 4 diode is designed fo r R F sm all signal switching in V H F U H F 0.5 0.3 2.5 FEATURES 0.5 • Sm all co n stru ctio n
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001S4D2
MC804
0G154D3
MC804
MITSUBISHI SMALL SIGNAL DIODE
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MC301
Abstract: 1R2 DIODE H7 RF MITSUBISHI SMALL SIGNAL DIODE MC-301 d70M
Text: MITSUBISHI DISCRETE SC blE » • bEM^êSS GÜlSB'i? 13fl « N I T S ANTENNA SWITCH M C301 R F SM A LL SIGN AL SW ITCHING DESCRIPTION The MC301 diode is employing a high reliability glass construction, designed for RF small signal switching in V H FU H F.
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MC301
MC301
1R2 DIODE
H7 RF
MITSUBISHI SMALL SIGNAL DIODE
MC-301
d70M
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mc2848
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2848 F O R H IG H S P E E D S W IT C H IN G A P P L IC A T IO N _ S IL IC O N E P IT A X IA L T Y P E (C O M M O N A N O D E ) D E S C R IP T IO N Mitsubishi MC2848 is a super mini package plastic seal type silicon epitaxial
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MC2848
MC2848
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI OPTICAL SEMICONDUCTOR DEVICES TECHNICAL TERMS AND CHARACTERISTICS TECHNICAL TERMS AND SYMBOLS FOR LASER DIODES TERM SYMBOL DESCRIPTION Ith Current at which laser oscillation begins (Fig. 1) Forward current to obtain specified light output (Fig. 1)
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