RDRAM cross reference
Abstract: No abstract text available
Text: MITSUBISHI LSIs Preliminary Spec. Some contents are subject to change without notice. MH32/64R18BUP-408,458,536 DESCRIPTION The MH32/64R18BUP is the Direct Rambus RIMM™ module. This consists of eight/sixteen industry 4Mx18 Direct Rambus DRAM Direct RDRAM™ in M-CSP and one industory standard
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MH32/64R18BUP-408
MH32/64R18BUP
4Mx18
600MHz
800MHz
MIT-DS-0278-0
RDRAM cross reference
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ecg semiconductors master replacement guide
Abstract: transistor SMD marked RNW th 20594 TRANSISTOR si 6822 MIL-STD-202F-201A CT 1975 sam transistors br 6822 sun hold ras 2410 relay TRANSISTOR SMD MARKING CODE jg Mist Ultrasonic Humidifier
Text: RELIABILITY OF SEMICONDUCTOR DEVICES I. RELIABILITY OF SEMICONDUCTOR DEVICES 1. OUR PHILOSOPHY OF QUALITY 2. SEMICONDUCTOR RELIABILITY RELIABILITY OF SEMICONDUCTOR DEVICES I. RELIABILITY OF SEMICONDUCTOR DEVICES 1. OUR PHILOSOPHY OF QUALITY Since its foundation, Mitsubishi Electric has been seeking a philosophy of extending the business and contributing the society with high
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peugeot 206
Abstract: vw polo volvo TOYOTA TOYOTA COROLLA peugeot renault vw transporter renault megane citroen c5
Text: Nackstödsfäste med flexarm för Tablet DVD För skärm med hål undertill för skruvfäste, sk kamerafäste “-gänga Till monteringen har använts ett nackstödsfäste med flexarm för skärm med kamerafäste. Tablet DVD på plats. Innermått Yttermått
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99b-04
peugeot 206
vw polo
volvo
TOYOTA
TOYOTA COROLLA
peugeot
renault
vw transporter
renault megane
citroen c5
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peugeot 206
Abstract: volkswagen renault mitsubishi L200 NISSAN renault megane peugeot peugeot 406 peugeot 307 renault scenic
Text: Nackstödsfäste för Tablet DVD. För skärm med skruvfäste på undersidan, sk kamerafäste med tum “ -gänga. Till monteringen har använts ett nackstödsfäste för skärm med kamerafäste. Tablet DVD på plats. Multimedia och underhållning i bilen
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04Passat
03Polo
03Touareg
03Touran
04S60
S70/V70
/XC70
peugeot 206
volkswagen
renault
mitsubishi L200
NISSAN
renault megane
peugeot
peugeot 406
peugeot 307
renault scenic
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES ? QM200DY-24B { HIGH POWER SWITCHING USE I _ INSULATED TYPE f QM2000Y-24B Collector current. 200A Coltector-emitter voltage. 1200V • hFE DC current gain. 750
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QM200DY-24B
QM2000Y-24B
E80276
E80271
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QM100TF-HB
Abstract: QM100TF 100TF-HB
Text: ! QM100TF-HB \i MITSUBISHI TRAN SISTOR M ODULES I | HIGH POWER SWITCHING USE _ iNSULATED TYPE QM 100TF-HB • lc • V cex Collector c u rre n t. 100A Coltector-emitter v o lta g e . 600V • h FE
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QM100TF-HB
100TF-HB
E80276
E80271
QM100TF-HB
QM100TF
100TF-HB
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L302A
Abstract: all transistor mitsubishi air conditioner
Text: f MITSUBISHI TRANSISTOR MODULES } QM15TD-H I g MEDIUM POWER SWITCHING USE _ I INSULATED TYPE QM15TD-H . 15A Collector current Collector-emitter voltage. 600V DC current gain . 75 • Ic
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QM15TD-H
QM15TD-H
E80276
E80271
L302A
all transistor
mitsubishi air conditioner
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8203a
Abstract: Mitsubishi transistor qm15kd-hb QM15KD
Text: MITSUBISHI TRANSISTOR MODULES QM15KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM15KD-HB • lc • Vcex • hre Collector current. 15A Collector-emitter voltage. 600V DC current gain. 250
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QM15KD-HB
E80276
E80271
8203a
Mitsubishi transistor
qm15kd-hb
QM15KD
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qm150hy-h
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES i QM150HY-H j HIGH POWER SWITCHING USE ! INSULATED TYPE | QM150HY-H • Ic • Vcex Collector current. 150A Collector-emitter voltage. 600V • hFE DC current gain.75
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QM150HY-H
QM150HY-H
E80276
E80271
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QM10KD-HB
Abstract: EM- 546 motor IO741 t15Q Mitsubishi transistor QM10 QM10K
Text: ! MITSUBISHI TRANSISTOR MODULES I } QM10KD-HB I } ; ? MEDIUM POWER SWITCHING USE j ; INSULATED TYPE } QM10KD-HB • Ic Collector current. 10A Collector-emitter voltage. 60 0 V • hFE DC current gain. 250
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QM10KD-HB
QM10KD-HB
E80276
E80271
EM- 546 motor
IO741
t15Q
Mitsubishi transistor
QM10
QM10K
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diode t25 4 L8
Abstract: diode t25 4 HO
Text: MITSUBISHI TRANSISTOR M O D U LES QM15TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE • Ic • Vcex Collector current.15A Coliector-emitter voltage.1000V • hFE DC current gain . 75 • Insulated Type
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QM15TB-2H
E80276
E80271
diode t25 4 L8
diode t25 4 HO
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diode I92
Abstract: No abstract text available
Text: ! MITSUBISHI TRANSISTOR MODULES j QM400HA-24B I HIGH POWER SWITCHING USE ! INSULATED TYPE ï QM400HA-24B • Ic • Vc e x Collector current.400A Col lector-emitter voltage.1200V • hFE DC current gain. 750
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QM400HA-24B
QM400HA-24B
E80276
E80271
diode I92
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M6271
Abstract: No abstract text available
Text: MITSUBISHI STANDARD LINEAER IC M6270X,M6271X, M6272X,M6273X,M6274XML/SL VOLTAGE DETECTING, SYSTEM RESETTING IC SERIES GENERAL DESCRIPTION The M627XXML/SL is a voltage threshold detector designed for detection of a supply voltage and generation of a system
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M6270X
M6271X,
M6272X
M6273X
M6274XML/SL
M627XXML/SL
M62724
M627X2
M627X3
M627X4
M6271
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HD 4480 LCD
Abstract: amplitude modulation ic,s HD 4480 44024 mitsubishi colt mitsubishi colt pin M51403FP M51404AFP 406MHZ IC cd 4020 pin diagram
Text: MITSUBISHI ICs TV M51404AFP SECAM SYSTEM CHROMA SIGNAL PROCESSOR DESCRIPTION The M51404AFP is a semiconductor integrated circuit for SEC A M system chroma signal processing. This IC contains a limiter amplifier, PAL/SECAM system switch and detector circuit.
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M51404AFP
M51404AFP
M51403FP
HD 4480 LCD
amplitude modulation ic,s
HD 4480
44024
mitsubishi colt
mitsubishi colt pin
M51403FP
406MHZ
IC cd 4020 pin diagram
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transistor SE 431
Abstract: QM150DY-2H transistor 431 N QM15
Text: MITSUBISHI TRANSISTOR MODULES QM150DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-2HK • lc • V cex • hFE Collector c u rre n t. 150A Collector-em itter vo lta g e . 1000V DC current g a in . 75
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QM150DY-2HK
E80276
E80271
transistor SE 431
QM150DY-2H
transistor 431 N
QM15
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM 15HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM15HA-H • Ic • Vcex Collector c u rre n t. 15A Collector-em itter v o lta g e . 600V • hFE DC current g a in . 75
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15HA-H
QM15HA-H
E80276
E80271
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs Preliminary S peeD Some contents are subject to change without notice. MH32/64R18BUP-408,458,536 DESCRIPTION The MH32/64R18BUP is the Direct R am bus R IM M ™ module. This consists of eight/sixteen industry 4Mx18 Direct Rambus DRAM Direct
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MH32/64R18BUP-408
MH32/64R18BUP
4Mx18
600MHz
800MHz
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM100DY-24K HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-24K • lc Collector c u rre n t. 100A • V cex C ollector-em itter v o lta g e . 1200V • hFE DC current g a in . 75
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QM100DY-24K
E80276
E80271
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RF POWER TRANSISTOR NPN
Abstract: TRANSISTOR 2SC2538 equivalent 2SC2538 8D2T hu cj voe
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2538 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC2538 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on V H F band mobile radio applications. FEATURES • • • High power gain: Gp e ^ 10dB
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2SC2538
175MHz
25-j3
500mW
175MHz
RF POWER TRANSISTOR NPN
TRANSISTOR 2SC2538 equivalent
8D2T
hu cj voe
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM200HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE QM200HC-M APPLICATION Robotics, W elders, Forklifts, Golf cart OUTLINE DRAWING & CIRCUIT DIAGRAM Dim ensions in mm BO — f - t j - - W V -4 — •f-AAA'-t- EO —-'j' ex ó
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QM200HC-M
VCO200V
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs Some contents are subject to change without notice. MH32/64R18BUP-408,458,536 DESCRIPTION The M H 32/64R 18B U P is the Direct Rambus RIM M ™ module. This consists of eight/sixteen industry 4M x18 Direct Rambus DRAM Direct R D R A M ™ ¡n M -C S P and one industory standard
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MH32/64R18BUP-408
MH32/64R18BUP
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inverter "SM 1600" output 48 V
Abstract: inverter SM 1600 output 48 V E 446
Text: a | MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR C T 15S M -24 GENERAL INVERTER • UPS USE C T15SM -24 OUTLINE DRAWING Dimensions in mm 15-9MAX, 4.5 1 .5 ;T , S o t . r ii 2 0 .0 1 /v ÍÍ J -H 2 1 .0 T (?) 4 .4 2 Iin a 5 .4 5 (3': 5 .4 5 0 .6 2 .8 J) GATE
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15-9MAX,
inverter "SM 1600" output 48 V
inverter SM 1600 output 48 V
E 446
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F82M1
Abstract: mitsubishi MF82M1 F82M1-T7D
Text: MITSUBISHI M EM O R Y CARD F L A S H M E M O R Y CAR DS 8 /1 6 -bit D ata Bus Flash M e m o ry C ard MF82M1 G9D A T X X MF84M1 G9D A T X X MF88M1 G9DATXX MF810M G9DATXX MF816M G9DATXX MF820M G9DATXX MF82M1 77 D A T X X Connector Type Two-piece 68-pin IT ”
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MF82M1
MF84M1
MF88M1
MF810M
68-pin
MF816M
MF820M
MF82M1
F82M1
mitsubishi MF82M1
F82M1-T7D
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Untitled
Abstract: No abstract text available
Text: ETE D • b5 4TÔ 20 0014^=1 T ■ ' ; » m u B z s H H n ^ P T ^ P K o “ M IT S U B IS H I L S Is M 5 M 8 2 C 5 4 P / F P /J . C M O S PR O G R A M M A B L E IN T E R V A L T IM E R DESCRIPTION The M5M82C54P is a programmable general-purpose timer device developed by using the silicon-gate CMOS process.
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M5M82C54P
M5M82C54P
24-pin
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