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    MILLIMETER WAVE RADAR Search Results

    MILLIMETER WAVE RADAR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67B001BFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation
    TC78B011FTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=30/Square, Sine Wave Visit Toshiba Electronic Devices & Storage Corporation
    TB67B001AFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    CYD36S36V18-167BGXI Rochester Electronics 1MX36 DUAL-PORT SRAM, 4ns, PBGA484, 27 X 27 MM, 2.33 MM HEIGHT, 1 MM PITCH, LEAD FREE, PLASTIC, BGA-484 Visit Rochester Electronics Buy

    MILLIMETER WAVE RADAR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MA4AGBLP912

    Abstract: beam lead PIN diode Microwave PIN diode MA4AGBLP912 v3 diode AF103
    Text: MA4AGBLP912 AlGaAs Beamlead PIN Diode Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ V3 MA4AGBLP912 Low Series Resistance Low Capacitance Millimeter Wave Switching Millimeter Wave Cutoff Frequency 5 Nanosecond Switching Speed Can be Driven by a Buffered +5V TTL


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    PDF MA4AGBLP912 MA4AGBLP912 beam lead PIN diode Microwave PIN diode MA4AGBLP912 v3 diode AF103

    MA4E2038

    Abstract: handling of beam lead diodes police radar detector M541
    Text: Millimeter Wave GaAs Beam Lead Schottky Barrier Diode MA4E2038 MA4E2038 Millimeter Wave GaAs Beam Lead Schottky Barrier Diode 1,2 Package Outlines Features • • • • • Low Series Resistance Low Capacitance High Cut off Frequency Silicon Nitride Passivation


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    PDF MA4E2038 MA4E2038 handling of beam lead diodes police radar detector M541

    Untitled

    Abstract: No abstract text available
    Text: MA4GP905 GaAs Beamlead PIN Diode V3 MA4GP905 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Low Series Resistance Low Capacitance Millimeter Wave Switching Millimeter Wave Cutoff Frequency 3 Nanosecond Typical Switching Speed Can be Driven by a Buffered +5V TTL


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    PDF MA4GP905 MA4GP905

    M541

    Abstract: MA4GP905
    Text: MA4GP905 GaAs Beamlead PIN Diode V3 MA4GP905 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Low Series Resistance Low Capacitance Millimeter Wave Switching Millimeter Wave Cutoff Frequency 3 Nanosecond Typical Switching Speed Can be Driven by a Buffered +5V TTL


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    PDF MA4GP905 MA4GP905 M541

    mmic distributed amplifier

    Abstract: hmc256 420 MMIC about mini electronics project Ka-Band MMIC Mixer ka-band prescaler univision technology MMIC code 420 DC-13 HMC235QS16G
    Text: OFF-THE-SHELF HITTITE MICROWAVE CORPORATION FEBRUARY 1999 MMICs for Millimeter Wave Radios from Hittite Microwave For applications in the emerging market for Ka-band communication terminals, Hittite Microwave Corporation has introduced a family of 5 new millimeter


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    PDF HMC258, HMC259, HMC264, HMC265 HMC261, mmic distributed amplifier hmc256 420 MMIC about mini electronics project Ka-Band MMIC Mixer ka-band prescaler univision technology MMIC code 420 DC-13 HMC235QS16G

    Untitled

    Abstract: No abstract text available
    Text: MMICs, RFICs, Integrated system solution Microwave & Millimeter wave product Line = VectraWave is a solution provider for integrated electronic in high frequency, microwaves and optoelectronic for telecommunications and


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    PDF 30Gbps 30GHz 16X16 12GHz 24X18 40Ghz 43GHz/21

    83554-90016

    Abstract: No abstract text available
    Text: Agilent 83554A/83555A/83556A mm-wave Source Modules* Data Sheet 26.5 to 40.0 GHz 33.0 to 50.0 GHz 40.0 to 60.0 GHz Precision and power from a millimeter-wave swept solution * For mm-wave source modules from 50 to 110 GHz Agilent model numbers 83557A and 83558A please refer to publication number 5958-0398.


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    PDF 3554A/83555A/83556A 3557A 3558A) 83550-series 83554-90016

    Gunn Diode

    Abstract: FMCW Radar FMCW gunn diode radar module gunn diode datasheet easily tuned oscillator radar gunn diode FMCW circuit gunn diode radar FMCW Radar Module
    Text: Device No / Annotation Helvetica bold 12pt Bold XXXXXX AC2001 Millimeter Wave gunn Oscillator Module DS5074 1.1 january 1999 Mitel Semiconductor has developed a low cost, state of the art Millimetre Wave Gunn diode based oscillator module that operates in the 75 to 80 GHz band, with a 1


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    PDF AC2001 DS5074 Gunn Diode FMCW Radar FMCW gunn diode radar module gunn diode datasheet easily tuned oscillator radar gunn diode FMCW circuit gunn diode radar FMCW Radar Module

    radar 77 ghz receiver

    Abstract: MRD2001
    Text: Analog, Mixed Signal and Power Management MRD2001 77 GHz Radar Transceiver Chipset Features Overview • Scalable to four Tx and 12 Rx channels Freescale millimeter wave and radar products enable advanced, high-performance, multi-channel • Advanced packaging technology


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    PDF MRD2001 MRD2001FS radar 77 ghz receiver MRD2001

    Bt 2313

    Abstract: AU 6256 bt 1488 22202 capacitor 344 21225 3429 vectron Lowpass Filter 3 GHz 10393 making 7136 1004 BT 816 transistor
    Text: Company Overview Dielectric Laboratories, Inc. DLI is your global partner for application specific microwave and millimeter wave components serving customers in fiber optic, wireless, medical, transportation, semiconductor, space, avionics and military markets. With over 35 years of


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    N1999A

    Abstract: No abstract text available
    Text: Measurement Considerations for Generating and Analyzing MillimeterWave Signals Application Note In applications that require high-speed, short-range connections, interest is growing in the use of signals that operate at millimeter-wave frequencies. Examples include satellite-to-satellite


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    PDF si800 BP-01-15-14) 5991-3968EN N1999A

    ofdm modulator ic

    Abstract: 802.11a Baseband MAIC-010359-000201 64-QAM-OFDM optimized differential GFSK demodulator in future 14 Ghz microwave transceiver ofdm modulator 64qam integrated circuit
    Text: 24 GHz ISM Band Integrated Transceiver Preliminary Technical Documentation MAIC-010359-000201 FEATURES Millimeter-wave mmW integrated transceiver Direct up and down conversion architecture 24 GHz ISM band 23.5-25.5 GHz frequency of operation 1.5 Volt operation, low-power consumption


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    PDF MAIC-010359-000201 MAIC-010359-000201 ofdm modulator ic 802.11a Baseband 64-QAM-OFDM optimized differential GFSK demodulator in future 14 Ghz microwave transceiver ofdm modulator 64qam integrated circuit

    Gunn Diode

    Abstract: OUTPUT POWER OF A GUNN DIODE OSCILLATOR gunn diode radar module gunn diode datasheet radar gunn diode gunn diode radar gunn diode oscillator GaAs Gunn Diode diode gunn FMCW Radar
    Text: XXXXXX AC2001 Millimeter Wave gunn Oscillator Module Replaces March 1999, version DS5074-2.0 DS5074-3.0 January 2000 Features l l l l High output power Low phase noise performance Frequency stability with temperature Frequency agility Applications l l l l


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    PDF AC2001 DS5074-2 DS5074-3 Gunn Diode OUTPUT POWER OF A GUNN DIODE OSCILLATOR gunn diode radar module gunn diode datasheet radar gunn diode gunn diode radar gunn diode oscillator GaAs Gunn Diode diode gunn FMCW Radar

    MA4AGBLP912

    Abstract: AF103 Microwave PIN diode MA4AGBLP912 beam lead pin diode M541 W-band diode 10ghz pin diode
    Text: MA4AGBLP912 AlGaAs Beamlead PIN Diode RoHS Compliant Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Low Series Resistance Low Capacitance Millimeter Wave Switching & Cutoff Frequency 5 Nanosecond Switching Speed Can be Driven by a Buffered +5V TTL Silicon Nitride Passivation


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    PDF MA4AGBLP912 MA4AGBLP912 AF103 Microwave PIN diode MA4AGBLP912 beam lead pin diode M541 W-band diode 10ghz pin diode

    cavity resonator

    Abstract: 9930 gn ETEL 38 Loss Filters two cavity resonator 8GHz oscillator design dielectric resonator oscillator 3 to 10 GHz bandpass filter TUNABLE VCO 24GHz Radar
    Text: Resonators DLI has a family of patent pending high-Q ceramic cavity resonators. They provide an ideal solution for high performance, low-cost microwave, or millimeter wave oscillators. The devices are fully shielded and designed on our temperature stable, high


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    PH1819-60

    Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
    Text: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies


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    COBRA RF

    Abstract: GaN amplifier microwave transceiver applications of vlsi in antennas mmic A pittman radar match filter design Types of Radar Antenna 1000X front-end radar
    Text: THE ROAD FROM RFIC TO SOC T wenty years ago, the microwave semiconductor industry in the US and subsequently all over the world got a boost from the Defense Advanced Research Procurement Activity, DARPA’s $600 M MIMIC Microwave and Millimeter-wave Monolithic


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    Untitled

    Abstract: No abstract text available
    Text: MA4GP905 GaAs M/A-COM Products Rev. 2 RoHS Compliant Beamlead PIN Diode Features MA4GP905 ♦ Low Series Resistance ♦ Low Capacitance ♦ Millimeter Wave Switching & Cutoff Frequency ♦ 3 Nanosecond Switching Speed ♦ Can be Driven by a Buffered +5V TTL


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    PDF MA4GP905 MA4GP905

    IS-19

    Abstract: No abstract text available
    Text: Microwave/Millimeter-Wave Products 6.5 – 11.5 GHz High-Power Amplifier – pHEMT Preliminary The TGA9083-EEU is fabricated using TriQuint’s 0.25 µm T-gate power pHEMT process. Bondpad and backside metallization is gold plated for compatibility with eutectic alloy attachment


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    PDF TGA9083-EEU TGA9083-EEU IS-19

    MA4GP905

    Abstract: M541 10ghz pin diode
    Text: MA4GP905 GaAs RoHS Compliant Rev. V2 Beamlead PIN Diode Features MA4GP905 ♦ Low Series Resistance ♦ Low Capacitance ♦ Millimeter Wave Switching & Cutoff Frequency ♦ 3 Nanosecond Switching Speed ♦ Can be Driven by a Buffered +5V TTL ♦ Silicon Nitride Passivation


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    PDF MA4GP905 MA4GP905 M541 10ghz pin diode

    beam lead PIN diode

    Abstract: No abstract text available
    Text: MA4AGBLP912 AlGaAs M/A-COM Products Rev. 2 RoHS Compliant Beamlead PIN Diode Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Low Series Resistance Low Capacitance Millimeter Wave Switching & Cutoff Frequency 5 Nanosecond Switching Speed Can be Driven by a Buffered +5V TTL


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    PDF MA4AGBLP912 MA4AGBLP912 beam lead PIN diode

    2.4 ghz FM RECEIVER CIRCUIT DIAGRAM

    Abstract: Gunn oscillator InP gunn diode x band amplifier GaAs Gunn Diode "94 GHz" GaAs Gunn Diode 24 millimeter wave radar GaAs Gunn diode VCO x band diode detector waveguide microwave transceiver gunn diode x band radar
    Text: /yfoccm Millimeter Wave Subassemblies Overview Choice of Transmission Line Media F CUTPOT In millimeter wave Integrated circuit assemblies as in conventional integrated circuit assemblies, the choice of media is a major factor in terms of technical success and cost effectiveness.


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    alpha industries catalog

    Abstract: MMIC 94
    Text: Alpha Millimeter Wave MMIC Capabilities We have developed a number of millimeter wave MMIC chips which are not currently supported for production, but are available in limited quantities for prototyping, proof of concept studies, etc. The chips are ready to go to production when necessary, but will


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    8 GHz microwave antenna

    Abstract: array antenna 77 ghz microwave antenna 8 GHz 35 GHz microwave antenna array antenna Microstrip Antennas radar 77 ghz
    Text: TRG Antenna Division For the last 30 years Alpha’s TRG Antenna Group has been a pioneer in the manufacturing of multi-function microwave and millimeter wave antennas. The TRG Group remains an important part of Alpha’s organization and has maintained its capabilities from


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