MIL-STD883C METHOD Search Results
MIL-STD883C METHOD Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TDC1044AR4C |
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TDC1044A - ADC, Proprietary Method, 4-Bit, 1 Func, 1 Channel, Parallel, 4 Bits Access, Bipolar, PQCC20 |
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TDC1044AN9C |
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TDC1044A - ADC, Proprietary Method, 4-Bit, 1 Func, 1 Channel, Parallel, 4 Bits Access, Bipolar, PDIP16 |
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CA3306D/B |
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CA3306 - ADC, Flash Method, 6-Bit, 1 Func, 1 Channel, Parallel, Word Access, CMOS, CDIP18 |
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MD28F010-20/B |
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28F010 - 128K X 8 Flash, Mil Temp |
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MR80C31BH/B |
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80C31BH - 8-Bit CMOS Microcontroller, Mil Temp |
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MIL-STD883C METHOD Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: P R t C I S I O N T H I N F I L M T E C H C u sto m R e s is to r A rrays, U ser Trim N O L O G Y T h in F ilm UT Series F eatures • Final resistor tolerance and stability is a function of end user trim capabilities • Visual inspection per MIL-STD883C method 2032 for Class B |
OCR Scan |
MIL-STD883C | |
"1394 Firewire"Contextual Info: PJClamp0502Q DUAL ULTRA LOW CAPACITANCE ESD PROTECTOR ARRAY PRELIMINARY This Dual Unidirectional ESD Protector Array family have been designed to protect sensitive equipment against ESD in high speed transmission buses, operating at 5V and demanding the lowest insertion loss. This array offers an integrated |
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PJClamp0502Q IEC61000-4-2 OT523 "1394 Firewire" | |
Contextual Info: PJ ESDZ 6 V 8 -2 G E.S.D. Dual Protection Diode Array This Dual Unidirectional ESD Protector Array family have been designed to protect sensitive equipment against ESD in high speed transmission buses, operating at 5V. This dual array offers an integrated solution to protect up to |
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OT523 OT523 IEC61000-4-2 | |
sot523Contextual Info: PJESDZ6V8-2G E.S.D. Dual Protection Diode Array This Dual Unidirectional ESD Protector Array family have been designed to protect sensitive equipment against ESD in high speed transmission buses, operating at 5V. This dual array offers an integrated solution to protect up to |
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OT523 OT523 IEC61000-4-2 sot523 | |
Contextual Info: PJESD5V0BQ4G QUAD BI-DIRECTIONAL TVS ARRAY FOR ESD PROTECTION PRELIMINARY This Quad Bi-directional TVS/Zener Array have been designed to protect sensitive equipment against ESD in CMOS circuitry operatin at 5V. This TVS array offers an integrated solution to protect up to 4 data lines in applications, where the board |
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IEC61000-4-2 OT666 | |
sumitomo epoxy
Abstract: 7C109A CY7C109 EME TI
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EME-9300 CY7C109 32-pin, 400-mil CY7C109) 7C109A PassivaY7C109-VC CY7C109-VC sumitomo epoxy 7C109A CY7C109 EME TI | |
Contextual Info: PJESD5V0Q4G QUAD TVS/ZENER ARRAY FOR ESD PROTECTION PRELIMINARY This Quad TVS/Zener Array family have been designed to protect sensitive equipment against ESD in CMOS circuitry operating at 5V. This TVS array offers an integrated solution to protect up to 4 data lines in applications, where the board |
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IEC61000-4-2 OT666 | |
0524P
Abstract: PJCSP0524P 3015-6
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PJCSP0524P IEC61000-4-2 0524P 0524P PJCSP0524P 3015-6 | |
Contextual Info: PJESD5V0QL4G, L5G LOW CAPACITANCE TVS/ZENER ARRAYS FOR ESD PROTECTION These 4 and 5 TVS/Zener Arrays have been designed to protect sensitive equipment against ESD in CMOS circuitry operating at 5V. These TVS arrays offers an integrated solution to protect 4 or 5 data lines in applications, where the board |
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IEC61000-4-2 OT666 | |
Contextual Info: PJT5V0BQG TRIPLE BI-DIRECTIONAL TVS ARRAY FOR ESD PROTECTION PRELIMINARY This Triple Bi-directional TVS/Zener Array family have been designed to protect sensitive equipment against ESD in CMOS circuitry operatin at 5V. This TVS array offers an integrated solution to protect up to 3 data lines in applications, where the |
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IEC61000-4-2 OT666 | |
Contextual Info: PJESDZ6V8-2G E.S.D. Dual Protection Diode Array This Dual Unidirectional ESD Protector Array family have been designed to protect sensitive equipment against ESD in high speed transmission buses, operating at 5V. This dual array offers an integrated solution to protect up to |
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OT523 IEC61000-4-2 | |
MSM80C85A2RS
Abstract: MSM80C85A-2RS
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MIL-STD-883B, 30min) 100oC 24hfs) MSM80C85A2RS MSM80C85A-2RS | |
LC-2488B4H2
Abstract: STM-16 oc-48 laser diode driver 1550 nrz power supply optical 3.3V oc48 single mode transmitter circuit using laser diode single mode laser schematic symbol for rj45
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LC-2488B4H2 OC-48 STM-16 OC-48/SDH RJ-45 -STD-883C STM-16 oc-48 laser diode driver 1550 nrz power supply optical 3.3V oc48 single mode transmitter circuit using laser diode single mode laser schematic symbol for rj45 | |
rgb-YC
Abstract: TDA8446 3state switch
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OCR Scan |
TDA8446 TDA8446 TDR8446 100nF| rgb-YC 3state switch | |
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TSI180B1
Abstract: TSI200B1 TSI220B1 TSI265B1 TSI62B1 20 kV generator schematic TSI200 k17 DIODE TSIxxB1
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Contextual Info: hmp 128K x 8 SRAM MSM8129 - 020/025/35 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax. +44 (0191) 2590997 Issue 3 : September 2002 Description 128K x 8 CMOS Fast Static RAM The MSM8129 is a 1Mbit monolithic SRAM organised |
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MSM8129 MIL-STD-883 | |
Contextual Info: TRAILING EDGE PRODUCT - MINIMUM ORDER APPLIES PRODUCT MAY BE MADE OBSOLETE WITHOUT NOTICE 512K x 8 SRAM MSM8512 - 020/025/35 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax. +44 (0191) 2590997 Description Issue 1.1 :April 2001 |
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MSM8512 STD-883C. MIL-STD-883 | |
k17 DIODE
Abstract: TSI265B1 TSI180B1 TSI200B1 TSI220B1 TSI62B1 crowbar circuit TSIxxB1
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Contextual Info: 54ACT11109,74ACT11109 DUALJ-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET D2957, FEBRUARY 1987 - REVISED APRIL 1993_ logic symbol* 1Q 1Q 2Q 2Q t This symbol is In accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12. |
OCR Scan |
54ACT11109 74ACT11109 D2957, fl3bl723 | |
Contextual Info: hmp 128K x 8 SRAM MSM8129 - 020/025/35 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax. +44 (0191) 2590997 Issue 3 : September 2002 Description 128K x 8 CMOS Fast Static RAM The MSM8129 is a 1Mbit monolithic SRAM organised |
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MSM8129 MIL-STD-883 | |
MSM8512Contextual Info: 512K x 8 SRAM MSM8512 - 020/025/35 Issue 1.1 :April 2001 Description 524,288 x 8 CMOS Static RAM The MSM8512 is a 4Mbit monolithic SRAM organised as 512K x 8 with access times from 20ns to 35ns available. The device is available in a 32 pin ceramic surface mount packages. The device has a low power |
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MSM8512 MIL-STD-883C STD-883C. MSM8512JLMB MIL-STD-883 | |
RF MARKING CODE S4
Abstract: MARKING CODE jtw
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OCR Scan |
9090SGSC RF MARKING CODE S4 MARKING CODE jtw | |
Contextual Info: 512K x 8 SRAM MSM8512 - 020/025/35 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax. +44 (0191) 2590997 Issue 1.1 :April 2001 Description 524,288 x 8 CMOS Static RAM The MSM8512 is a 4Mbit monolithic SRAM organised |
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MSM8512 STD-883C. MIL-STD-883 | |
Contextual Info: 512K x 8 SRAM MSM8512 - 020/025/35 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax. +44 (0191) 2590997 Issue 1.1 :April 2001 Description 524,288 x 8 CMOS Static RAM The MSM8512 is a 4Mbit monolithic SRAM organised |
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MSM8512 STD-883C. MIL-STD-883 |