MIL 880 TRANSISTOR Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9180 MRF9180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

MRF9180R6

Abstract: rf push pull mosfet power amplifier 865 marking amplifier c11b3
Contextual Info: Freescale Semiconductor Technical Data Rev. 9, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9180R6 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9180 MRF9180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF9180 MRF9180S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies in the 865 – 895 MHz band. The high gain and broadband performance

MRF9180

Abstract: MRF9180S
Contextual Info: MOTOROLA Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA MRF9180 MRF9180S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies in the 865 – 895 MHz band. The high gain and broadband performance

MRF9180R6

Contextual Info: MOTOROLA Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF9180R6 N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with

MRF9180

Abstract: MRF9180R6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9180 Rev. 10, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9180R6 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

MRF9135LSR3

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9135L MRF9135LR3 MRF9135LSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

C21B1

Abstract: MRF9180 MRF9180R6
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF9180R6 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with

MRF9180R6

Contextual Info: Freescale Semiconductor Technical Data MRF9180 Rev. 9, 12/2004 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF9180R6 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

MRF9180

Abstract: MRF9180R6
Contextual Info: Document Number: MRF9180 Rev. 10, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9180R6 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

Contextual Info: MOTOROLA Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9180 MRF9180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies in the 865 – 895 MHz band. The high gain and broadband performance

MRF9180R6

Contextual Info: Freescale Semiconductor Technical Data MRF9180 Rev. 9, 12/2004 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF9180R6 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

100B270JP500X

Abstract: NIPPON CAPACITORS MRF9210 DS0978 TRANSISTOR J408 865 marking amplifier
Contextual Info: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance

MRF9180

Abstract: GGG 92 MRF9180S
Contextual Info: MOTOROLA Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9180 MRF9180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

MRF9180

Abstract: MRF9180S
Contextual Info: MOTOROLA Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9180 MRF9180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

rf push pull mosfet power amplifier

Abstract: push pull power amplifier
Contextual Info: MOTOROLA Order this document by MRF9180/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9180 MRF9180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

MRF9120

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these

J103 transistor 3 pin

Abstract: J103 transistor C6B3 UT-85-M17
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF897 Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800 – 970 MHz.

93F2975

Abstract: MRF9120S MRF9120
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these

Contextual Info: MOTOROLA Order this document by MRF9135L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9135L MRF9135LR3 MRF9135LSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

MRF9135L

Abstract: MRF9135LSR3 MRF9135LR3
Contextual Info: MOTOROLA Order this document by MRF9135L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9135L MRF9135LR3 MRF9135LSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

nippon capacitors

Abstract: 2508051107Y0 3A412 MRF9210R3
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9210/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9210R3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with

93F2975

Abstract: 865 marking amplifier MRF9120LR3
Contextual Info: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9120R3 MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these