MICROWAVE HEATING SOURCE CONFIGURATION Search Results

TGF4350-EPU

Contextual Info: TriQuint <+ Advance Product Information . SEMICONDUCTOR 300um Discrete pHEMT TGF4350-EPU Key Features and Performance 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration

Contextual Info: Advance Product Information SEMICONDUCTOR, 300um Discrete pHEMT TGF4350-EPU Key Features and Performance 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration Chip Dimensions 0.457 mm x

TGA4350EPU

Abstract: TGF4350-EPU microwave heating source configuration
Contextual Info: Advance Product Information 300um Discrete pHEMT TGF4350-EPU Key Features and Performance • • • 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration Chip Dimensions 0.5080 mm x

Sine wave PWM DC to AC Inverter ics

Abstract: ULN2803 PIN CONFIGURATION TA8316S tc9653an HIGH VOLTAGE DIODE for microwave ovens ta7606p induction heating ta8316s TLP250 low side pwm driver relay driver ic ULN2803 2SK3201
Contextual Info: Peripheral ICs Peripheral ICs for Home Appliances Toshiba offers a complete lineup of peripheral ICs for home appliances in various application fields as shown in the table below. Timer ICs Device TA7326P TA7326F TA7327P TB1004AF TB1010F TB1012F TB1022F Package

Contextual Info: Advance Product Information January 18, 2001 300um Discrete pHEMT TGF4350-EPU Key Features and Performance • • • 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration

klystron

Abstract: waveguide circulator VKS-7960A arc detector microwave waveguide "arc detector" high power klystron
Contextual Info: HEATWAVE VIS-102B 2.45 GHz, 60 KW TECHNICAL DATA This data sheet supersedes any technical data sheet having a date prior to March 15, 2006 Industrial Microwave Power System DESCRIPTION This integrated industrial microwave power system uses a CPI VKS-7960A klystron, designed for industrial service, as the

TGF4350

Contextual Info: Product Data Sheet August 5, 2008 300um Discrete pHEMT TGF4350 Key Features and Performance • • • 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration Chip Dimensions 0.620 mm x

Contextual Info: Advance Product Information April 16, 2001 300um Discrete pHEMT TGF4350-EPU Key Features and Performance • • • 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration

thermistor ntc 50k

Abstract: thermistor ntc 10k NTC 10k thermal sensor application thermistor ntc 10k NTC THERMISTORS for microwave oven water level sensors NTC probe temperature vs resistance Thermistor 50K ntc NTC 50K 2 thermistor thermistor ntc 10k characteristic
Contextual Info: NTC Thermistors Description Through traditional craftsmanship and engineering excellence, the Zettler name has symbolized quality and reliability in electrical components for over 100 years in demanding applications such as telecommunications systems, computer peripherals, office automation equipment, home appliances, security systems, test and measurement devices, and industrial controls.

TGF4350-EPU

Contextual Info: Advance Product Information May 15, 2001 300um Discrete pHEMT TGF4350-EPU Key Features and Performance • • • 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration Chip Dimensions 0.620 mm x

Contextual Info: SURFACE MOUNT COMPONENTS Surface-mounting of components saves critical space on the circuit board, can result in more reliable circuits and systems, and can reduce the cost of production through automated circuit fabrication. And since circuit densities are increasing as more

RF MESFET S parameters

Abstract: NES2427P-50
Contextual Info: 50 W S-BAND TWIN NES2427P-50 POWER GaAs MESFET FEATURES • • • OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 50 W TYP HIGH POWER ADDED EFFICIENCY: 38 % TYP HIGH LINEAR GAIN: 10 dB TYP PACKAGE OUTLINE T-86 45° R1.2 ± 0.3 2.4 ± 0.3 G1 G2 45° 11.4 ± 0.3

Triangle Microwave

Abstract: Rod Resistors Stripline Flange Terminations MCE OR KDI triangle KDI KDI "power divider" spring loaded SMA connector SN96 Triangle Microwave ON "Triangle Microwave"
Contextual Info: TECHNICAL OVERVIEW RESISTORS & TERMINATIONS RF Resistors are designed to perform resistive functions in RF or microwave circuits with a minimum of spurious reactance. These resistors are manufactured using two basic techniques. Terminations are power absorbing loads that match the characteristic impedance of transmission

KDI attenuator

Abstract: Triangle Microwave digital attenuator df-1073 PPT Diode specifications
Contextual Info: TECHNICAL OVERVIEW ATTENUATORS GENERAL INFORMATION Attenuators are commonly used to: 1 Reduce signal or power levels. 2) Provide isolation for improved impedance match between source and load. 3) Measure the gain or loss through substitution method. Three basic types of coaxial transmission line attenuators are presented in

Contextual Info: High Performance Emissivity-Independent Two-Color IR System Complete Fiber Optic Infrared System Includes Sensor and Rack Mount Monitor MADE IN USA System Features: ߜ Exceptional for Induction Heating ߜ Measurements Independent of Emissivity ߜ Optional Signal

TGA8014-SCC

Contextual Info: Product Data Sheet January 18, 2002 6 - 18 GHz Power Amplifier TGA8014-SCC Key Features and Performance • • • • • • 6 to 18 GHz Frequency Range 11 dB Typical Gain Greater Than 0.5 Watt Output Power at 1 dB Gain Compression Designed for Balanced Configuration

P-Channel mosfet 400v to220

Abstract: IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V
Contextual Info: APEC '99 Trench-Gate Technology for The Next Generation of MOS Power Devices IEEE, APEC Conference 1999 Eric R. Motto Sr. Application Engineer Powerex Inc. Youngwood PA USA APEC '99 Introduction 1. The Trench Gate Structure, Development History and Advantages

body contact FET soi RF switch

Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines TGA8014-SCC GAAS FET CROSS REFERENCE TGA8021 GAAS FET rf switch CROSS REFERENCE cte table for epoxy adhesive and substrate electric blanket microwave transducer MMIC X-band amplifier
Contextual Info: Gallium Arsenide Products Designers’ Information TriQuint Semiconductor Texas Phone: 972 994-8465 Fax: (972)994-8504 http://www.triquint.com IMPORTANT NOTICE TriQuint Semiconductor (TQS) reserves the right to make changes to or to discontinue any semiconductor product or service identified in this publication without notice. TQS advises

MIL-STD-750E

Abstract: 1N21B diode cc 3053 MIL-PRF-680 D65019 rectifier 2037-1 TT 2076 SAE-ARP-743 1N21B diode 1N21* Diode Detector Holder
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 June 2007 INCH - POUND MIL-STD-750E 20 November 2006 SUPERSEDING MIL-STD-750D 28 FEBRUARY 1995 DEPARTMENT OF DEFENSE TEST METHOD STANDARD TEST METHODS FOR SEMICONDUCTOR DEVICES

Combiners

Abstract: m561 power combiner broadband transformers wilkinson power divider wilkinson divider THREE PHASE ISOLATION TRANSFORMER CONSTRUCTION DETAIL 2-WAY POWER DIVIDER signal path designer
Contextual Info: Application Note Power Dividers/Combiners M561 V2.00 Introduction A power divider is ideally a lossless reciprocal device which can also perform vector summation of two or more signals and thus is sometimes called a power combiner or summer. Two forms of power dividers are generally

Contextual Info: PAGE 1 • MAY 2009 FEATURE ARTICLE www.mpdigest.com RF/Microwave Solid State Switches by Rick Cory, Skyworks Solutions, Inc. Introduction olid state switches are ubiquitous in modern RF/microwave systems. They are utilized to control signal flows, select signal sources and for many

systron Donner 410

Abstract: MIL-STD-750E Ultrasonic Atomizing Transducer systron donner accelerometer substitute diode PH 33D fastest finger first indicator synopsis emerson three phase dc motor driver service note tektronix 576 curve tracer MIL-STD-750E 1071 proximity detector sensor
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 June 2007 INCH - POUND MIL-STD-750E 20 November 2006 SUPERSEDING MIL-STD-750D 28 FEBRUARY 1995 DEPARTMENT OF DEFENSE TEST METHOD STANDARD TEST METHODS FOR SEMICONDUCTOR DEVICES

AN-A001

Abstract: AN004R
Contextual Info: IMFET Handling and Design Guidelines Application Note 1083 Introduction This application note provides basic information on the use and handling of Hewlett-Packard’s Internally Matched Power GaAs FETs or IMFETsTM. Topics include a brief product description, proper handling, some

induction cooker circuit diagram

Abstract: TC7600FNG induction cooker block diagrams tmp89fw24 TB6586BFG igbt induction cooker complete circuit diagram induction heater mosfet induction heater TB6584AFNG ULN2003APG diagram induction cooker
Contextual Info: 2010-9 SYSTEM CATALOG Home Appliances h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g Induction Rice Cookers Refrigerators Air Conditioners Dishwashers Automatic Washing Machines Characteristics of Motor Control Devices . 3