MICROWAVE DATABOOK Search Results

WATKINS JOHNSON mixer

Abstract: vari-l 1785 TETRA etch magnum microwave Magnum Microwave mixer BD256 WATKINS JOHNSON design of Circular Patch Antenna in ISM Band Avantek mixer BPD5-0767-072SA
Contextual Info: There is a new leader and source for your RF & microwave systems and components … Spectrum Microwave. Combining the people, products and technologies from FSY Microwave, Salisbury Engineering, Q-Bit, Magnum Microwave, Radian Technologies and Amplifonix into a single

MSC1002

Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition

CGY2030M

Abstract: SSOP16 SSOP20 footprint ssop16
Contextual Info: Philips Semiconductors Product specification DECT 500 mW power amplifier CGY2030M FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 40% The CGY2030M is a GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

irf 652

Contextual Info: Philips Semiconductors Preliminary specification DCS/PCS 2 W power amplifier CGY2021G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 50% (DCS) The CGY2021G is a DCS/PCS class 1 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier

CGY2030M

Abstract: DCS1800 SSOP16 SSOP20
Contextual Info: Philips Semiconductors Objective specification DECT 0.6 W power amplifier CGY2030M FEATURES GENERAL DESCRIPTION • 3.3 V supply voltage operation The CGY2030M is a GaAs monolithic microwave 600 mW power amplifier designed for a 3.3 V supply voltage. When

FLL105

Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202
Contextual Info: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ

Fuse m1 250C

Abstract: SIEMENS b43471 B43991 SIEMENS b43405 B43876 B43875 m1 250c fuse B41684 epcos B43991 B43405
Contextual Info: Microwave Ceramics and Modules RF LTCC Filter for ISM 2.4 GHz Filter B69893K2457C101 Preliminary datasheet Features • Low Profile maximum height 0.9 mm Change History Revision Detail of change P1 First release Date 09.06.06 Author Stadler Contents Page 2

1N5411

Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
Contextual Info: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal

LQFP-48 footprint

Abstract: schematics for a PA amplifier class c 7x7x1.4 n004 schematics for a PA amplifier 27 Mhz power amplifier power amplifier 33PF C5000 CGY2010G
Contextual Info: Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45% • Integrated power sensor driver The CGY2010G and CGY2011G are GSM class 4 GaAs Monolithic Microwave Integrated Circuits (MMICs) power

NJG1608

Abstract: NJG1608KB2
Contextual Info: NJG1608KB2 SPDT SWITCH GaAs MMIC ! GENERAL DESCRIPTION The NJG1608KB2 is a SPDT switch IC featured low insertion loss, medium handling power and high isolation. The NJG1608KB2 is suitable for switching of Tx/Rx signals at sub-microwave applications. The NJG1608KB2

NJG1666MD7

Abstract: FR4 substrate 1.6mm
Contextual Info: NJG1666MD7 SPDT SWITCH GaAs MMIC ! GENERAL DESCRIPTION ! PACKAGE OUTLINE The NJG1666MD7 is a GaAs SPDT switch designed for Set-top boxes, TV tuners, CATV tuners, and sub-microwave applications. The NJG1666MD7 features high isolation, low insertion loss and covering a broad frequency

Contextual Info: NJG1612HA8 SPDT Switch GaAs MMIC Q GENERAL DESCRIPTION NJG1612HA8 is a SPDT switch IC featured extremely high speed switching. This device is suitable for high speed switching of Tx/Rx signals at sub-microwave applications. This switch exhibits wide frequency range from 100MHz

NJG1612HA8

Contextual Info: NJG1612HA8 SPDT Switch GaAs MMIC ! GENERAL DESCRIPTION The NJG1612HA8 is a SPDT switch IC featured extremely high speed switching. This device is suitable for high speed switching of Tx/Rx signals at sub-microwave applications. This switch exhibits wide frequency range from 100MHz

Contextual Info: NJG1650HB6 SP3T SWITCH GaAs MMIC ! GENERAL DESCRIPTION NJG1650HB6 is a SP3T switch IC featured low insertion loss, high isolation and small size package. This switch is suitable for W-LAN, Bluetooth, and sub-microwave applications. A small and thin package of USB8-B6 is adopted.

CGY2013G

Abstract: LQFP48 PCA5075 SA1620 SMD0603
Contextual Info: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply.

CGY2023G

Abstract: LQFP48 LQFP64 LQFP80 PCA5075
Contextual Info: Philips Semiconductors Objective specification DCS 2 W power amplifier CGY2023G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 38% The CGY2023G is a DCS class 1 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply.

Contextual Info: NJG1612HA8 SPDT Switch GaAs MMIC  GENERAL DESCRIPTION The NJG1612HA8 is a SPDT switch IC featured extremely high speed switching. This device is suitable for high speed switching of Tx/Rx signals at sub-microwave applications. This switch exhibits wide frequency range from 100MHz

NJG1649

Abstract: NJG1649HB6 FR4 substrate 10GHz
Contextual Info: NJG1649HB6 SPDT SWITCH GaAs MMIC Q GENERAL DESCRIPTION NJG1649HB6 is a GaAs SPDT switch IC suited for W-LAN, Bluetooth and sub-microwave applications. This device can operate a single bit control signal from +1.3V. The ultra-small & ultra-thin USB8-B6 package is adopted.

avantek microwave

Abstract: Avantek amplifier 220-1 AVANTEK dba 167 MSA-0900 MSA-0900-GP2 MSA-0900-GP4 MSA-0900-GP6 AN-S009
Contextual Info: data sheet 3EC 1 1990 O avan tek MSA-0900 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers January, 1990 Features • Broadband, Minimum Ripple Cascadable 50 Q Gain Block • 8.0 ± 0.2 dB typical Gain Flatness from 0.1 to 4.0 GHz

NJG1650

Abstract: NJG1650HB6 NJG1650HB
Contextual Info: NJG1650HB6 SP3T SWITCH GaAs MMIC ! GENERAL DESCRIPTION NJG1650HB6 is a SP3T switch IC featured low insertion loss, high isolation and small size package. This switch is suitable for W-LAN, Bluetooth, and sub-microwave applications. A small and thin package of USB8-B6 is adopted.

CGY2020G

Abstract: LQFP48 LQFP64 LQFP80 PCA5075 SMD0603 nrx 34
Contextual Info: Philips Semiconductors Objective specification DCS 2 W power amplifier CGY2020G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 42% The CGY2020G is a DCS class 1 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 4.8 V battery supply.

capacitor 27pf

Abstract: NJG1615HA8
Contextual Info: NJG1615HA8 SPDT SWITCH GaAs MMIC Q GENERAL DESCRIPTION NJG1615HA8 is a SPDT switch IC featured low insertion loss, medium handling power and high isolation. This device is suitable for switching of Tx/Rx signals at sub-microwave applications. This switch exhibits wide frequency range from 100MHz

MSA-1100-GP4

Abstract: avantek microwave MSA-1100 MSA-1100-GP2 MSA-1100-GP6 modamp
Contextual Info: data sheet OEC Q avantek MSA-1100 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers January, 1990 Avantek Chip Outline1 Features • • • • • High Dynamic Range Cascadable 50 Q or 75 i2 Gain Block 3 dB Bandwidth: 50 MHz to 1.6 GHz