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Abstract: No abstract text available
Text: STA-025-20-20-SMA DATA SHEET Bi-Directional Amplifier, High Power 5/20 Watts Linear/CW, 2.4 GHz to 2.5 GHz, 1 us switching, 20 dB Gain, SMA The STA-025-20-20-SMA is an S-Band bi-directional module that delivers high quality TX signals while amplifying the RX signal with an advanced LNA to produce
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STA-025-20-20-SMA
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Abstract: No abstract text available
Text: Advanced Data Sheet VFHY105-010 90 Degree Hybrid MICROWAVE PRODUCTS GROUP 1.9 – 2.4 GHz Features Highly repeatable monolithic design Very low insertion loss High Isolation / Low VSWR Excellent phase & amplitude balance Power handling: 4 Watts
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VFHY105-010
VFHY105-010
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Untitled
Abstract: No abstract text available
Text: Advanced Data Sheet VFHY106-010 90 Degree Hybrid MICROWAVE PRODUCTS GROUP 2.2 – 2.9 GHz Features Highly repeatable monolithic design Very low insertion loss High Isolation / Low VSWR Excellent phase & amplitude balance Power handling: 4 Watts
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VFHY106-010
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Untitled
Abstract: No abstract text available
Text: Advanced Data Sheet VFHY106-010 90 Degree Hybrid MICROWAVE PRODUCTS GROUP 2200 – 2900 MHz Features Highly repeatable monolithic design Very low insertion loss High Isolation / Low VSWR Excellent phase & amplitude balance Power handling: 4 Watts
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VFHY106-010
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VFHY105-010
Abstract: No abstract text available
Text: Advanced Data Sheet VFHY105-010 90 Degree Hybrid MICROWAVE PRODUCTS GROUP 1900 – 2400 MHz Features Highly repeatable monolithic design Very low insertion loss High Isolation / Low VSWR Excellent phase & amplitude balance Power handling: 4 Watts
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Untitled
Abstract: No abstract text available
Text: High Power Bi-Directional Amplifier, 5/20 Watts, 2.4 GHz to 2.5 GHz, 1 us switching, 20 dB Gain, SMA TECHNICAL DATA SHEET PE15B5000 PE15B5000 is an S-Band bi-directional module that delivers high quality TX signals while amplifying the RX signal with an advanced LNA to produce the highest possible data rates. The amplifier operating in the 2.4 to 2.5 GHz frequency range and
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PE15B5000
PE15B5000
wer-bi-directional-amplifier-5-20-watts-2
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Abstract: No abstract text available
Text: Datasheet Rev A. A.15. Rev Feb 14. Technical Datasheet GT-1051B Microwave Power Amplifier 10 MHz to 50 GHz Broadband High-Power Instrumentation Amplifier 35528 -Rev.A / US012314 Sandpiper House, Aviary Court, Wade Road, Basingstoke, Hampshire, RG24 8GX, UK
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GT-1051B
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Abstract: No abstract text available
Text: Datasheet Rev A. A.15. Rev Feb 14. Technical Datasheet GT-1050B Microwave Power Amplifier 2 GHz to 50 GHz Broadband High-Power Instrumentation Amplifier 35527 -Rev.A / US012314 Sandpiper House, Aviary Court, Wade Road, Basingstoke, Hampshire, RG24 8GX, UK
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35527-Rev.
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microwave amplifier 2.4 ghz 10 watts
Abstract: amplifier TRANSISTOR 12 GHZ 2324-12L
Text: 2324-12L 12 Watts - 20 Volts, Class C Microwave 2300 - 2400 MHz GENERAL DESCRIPTION The 2324-12L is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 2300-2400 MHz. This transistor is specifically designed for Microwave Broadband Class C amplifier
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2324-12L
2324-12L
microwave amplifier 2.4 ghz 10 watts
amplifier TRANSISTOR 12 GHZ
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ZVE-3W-183X
Abstract: ZVE-3W-183 ZVE-3w 3w-183X
Text: Coaxial High Power Amplifier 50Ω 3W ZVE-3W-183+ 5.9 to 18 GHz The Big Deal • Wideband 5.9 to 18 GHz • Output Power, 3 Watts • Gain, 35 dB • Low cost $1295.00 ZVE-3W-183+ Price: $1295.00 QTY 1-9 ZVE-3W-183X+ Price: $1220.00 (QTY 1-9) Product Overview
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ZVE-3W-183+
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ZVE-3w
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BB 509 varicap diode
Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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microwave amplifier 2.4 ghz 10 watts
Abstract: transistor 24 GHz
Text: 2324-20 20 Watts, 24 Volts, Class C Microwave 2300-2400 MHz GENERAL DESCRIPTION The 2324-20 is a COMMON BASE transistor capable of providing 20 Watts of Class C, RF output power over the band 2300-2400 MHz. This transistor is specifically designed for Microwave Broadband Class C amplifier
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160mA
microwave amplifier 2.4 ghz 10 watts
transistor 24 GHz
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microwave amplifier 2.4 ghz 10 watts
Abstract: No abstract text available
Text: 2324-5 5 Watts, 24 Volts, Class C Microwave 2300-2400 MHz GENERAL DESCRIPTION The 2324-5 is a common base transistor capable of providing 5 Watts of Class C, RF output power over the band 2300-2400 MHz. This transistor is specifically designed for Microwave Broadband Class C amplifier
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160mA
microwave amplifier 2.4 ghz 10 watts
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Untitled
Abstract: No abstract text available
Text: Agilent 71708A Microwave Source Agilent 70428A Microwave Source Module Data Sheet Variable frequency source with lowest phase noise Courtesy of McDonnell Douglas Typical phase and AM noise of the Agilent 71708A microwave source and high quality microwave synthesizer
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1708A
0428A
1708A
5091-4500E
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bipolar MMIC 1.9V
Abstract: HMC476SC70E radar scheme 4x4 bit multipliers sensor radar uwb HMC543 HMC561 HMC610LP4E HMC642LC5 HMC649LP6E
Text: AUGUST 2007 OFF-THE-SHELF New DC to Millimeterwave ICs & Modules from Hittite TRUE RMS POWER DETECTOR IS BEST-IN-CLASS INSIDE. Covers 100 MHz to 3.9 GHz with 60 to 70 dB Dynamic Range Product Showcase Low Noise Amplifier Module HMC-C045 • 1.8 - 4.2 GHz
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HMC-C045
HMC561
HMC610LP4E
bipolar MMIC 1.9V
HMC476SC70E
radar scheme
4x4 bit multipliers
sensor radar uwb
HMC543
HMC561
HMC642LC5
HMC649LP6E
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SC 2272
Abstract: HMC481ST89 NE AND micro-X HMC311LP3 HMC311ST89 HMC368LP4 HMC479ST89 HMC484MS8G HMC490 HMC498
Text: OFF-THE-SHELF SPRING 2004 NEW RF TO MILLIMETERWAVE IC PRODUCTS FROM HITTITE HMC ADDS SiGe & InGaP HBT GAIN BLOCK AMPLIFIERS! INSIDE. * 17 NEW PRODUCTS RELEASED! Product Showcase +27 dBm Driver Amplifier HMC498 • 17 - 24 GHz • +24 dB Gain • +34 dBm Output IP3
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HMC498
HMC479ST89
HMC481ST89,
OC-48
OC-192
SC 2272
HMC481ST89
NE AND micro-X
HMC311LP3
HMC311ST89
HMC368LP4
HMC484MS8G
HMC490
HMC498
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HMC676LC3C
Abstract: No abstract text available
Text: ANALOG & MIXED -SIGNAL ICS, MODULES, SUBSYSTEMS & INSTRUMENTATION, DC - 110 GHZ AUTOMOTIVE Telematics & Sensors BROADBAND Cable Modem, CATV, DBS & VoIP Fixed Wireless, WiMAX & WiBro UWB & WirelessLAN CELLULAR INFRASTRUCTURE GSM, GPRS, CDMA, TD-SCDMA, WCDMA, UMTS & 4G / LTE
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Modul1-8-8301-8450
HMC676LC3C
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AS0104-700/300
Abstract: No abstract text available
Text: The MILMEGA ‘AS’ Series 2000 Dual Band Class A Solid State Microwave Amplifier Range Model: AS0104-700/300 700 Watt & 300 Watt 1.0 GHz - 4.0 GHz Dual Band Broadband Amplifier Two bands 1.0-2.0GHz and 2.0 to 4.0 GHz The AS0104 series of solid state power amplifiers
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AS0104
RS232,
RS232
7/16th
800mm
AS0104-700/300
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BGU7073
Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
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Dielectric Resonator Oscillator DRO
Abstract: 358 ez 802 C047 HMC-C029 HMC-C070 C049 HMC vco HMC-C025 HMC-C047 telemechanique LRD D35
Text: Microwave Modules & Instrumentation Selection Guide Standard Products, DC - 50 GHz Test & Measurement, Telecom, Military & Space Applications INSTRUMENTATION Synthesized Signal Generators MICROWAVE MODULES Amplifiers Attenuators DROs Frequency Dividers & Detectors
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High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications
Abstract: ofdm amplifier NEc hemt CGH35015 power amplifier circuit diagram with pcb layout amplifiers circuit diagram CGH35015S GaN amplifier GaN photo diode operational amplifier discrete schematic
Text: From June 2007 High Frequency Electronics Copyright 2007 Summit Technical Media, LLC High Frequency Design WiMAX AMPLIFIERS High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications U. H. Andre, R. S. Pengelly, A. R. Prejs and S. M. Wood, Cree Inc., and
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3g signal Booster
Abstract: HMC439QS16G HMC245QS16 W. Howard Associates gsm Booster GSM/ 3G booster HMC444LP4 Lambda Sensor hmc439 HMC311LP3
Text: WINTER 2003 OFF-THE-SHELF NEW RF TO MILLIMETERWAVE IC PRODUCTS FROM HITTITE INSIDE. * 15 NEW PRODUCTS RELEASED! * High IP3 Amplifiers, Pg 2 * SP3T Switches and Digital Attenuators, Pg 3 * High Isolation CATV Switch, Pg 4 * Medium Power Amp, Pg 4 * Active Multiplier Family, Pg 5
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36dBm
OC-48
OC-192
3g signal Booster
HMC439QS16G
HMC245QS16
W. Howard Associates
gsm Booster
GSM/ 3G booster
HMC444LP4
Lambda Sensor
hmc439
HMC311LP3
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4000 watts power amplifier circuit diagram pcb l
Abstract: Detector "Peak-to-Average Ratio
Text: HMC614LP4 / 614LP4E v03.0109 RMS & Peak to Average Power Detector 0.1 - 3.9 GHz Typical Applications Features The HMC614LP4 E is ideal for: IPWR Output: Instantaneous Power, Crest Factor Measurement • Log –> Root-Mean-Square (RMS) Conversion RF Signal Wave shape & Crest Factor Independent
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614LP4E
4000 watts power amplifier circuit diagram pcb l
Detector "Peak-to-Average Ratio
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rf power detector dynamic range CDMA
Abstract: automatic heat detector RF Power detector TRANSFORMER RF 4.5-MHz IF ETC1-1-13 H614 HMC610LP4E QAM256
Text: HMC614LP4 / 614LP4E v04.0309 RMS & Peak to Average Power Detector 0.1 - 3.9 GHz Typical Applications Features The HMC614LP4 E is ideal for: IPWR Output: Instantaneous Power, Crest Factor Measurement • Log –> Root-Mean-Square (RMS) Conversion RF Signal Wave shape & Crest Factor Independent
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HMC614LP4
614LP4E
rf power detector dynamic range CDMA
automatic heat detector
RF Power detector
TRANSFORMER RF 4.5-MHz IF
ETC1-1-13
H614
HMC610LP4E
QAM256
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