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    MICROSEMI US PACKAGE Search Results

    MICROSEMI US PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    MICROSEMI US PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UES1102SM

    Abstract: No abstract text available
    Text: ISCFdÈ1^Us1^Us text/html About News Contact keyword search: UES1102SM #16636 Package Division Scottsdale Datasheet (none) Mil-Spec Shipping (none) TR7\1500cntTR7 Qual Data Contact Microsemi Symbol Max IO 2.5 A Reverse Voltage Vrwm 100 V Max Forward Surge Current


    Original     		PDF UES1102SM 100ns) TR7\1500cntTR7 UES1102SM

    Zener Voltage Regulator

    Abstract: voltage regulator diode
    Text: 1PMT5918e3/TR7 | Microsemi Quality Careers Investors Contact Us Search Parametric Search Products Applications Design Support Ordering Company Home › Products › Product Directory › Discrete Power And Small Signal Products › Zeners › Zener Voltage Regulator Diode


    Original     		PDF 1PMT5918e3/TR7 com/en/products/product-directory/311959 Zener Voltage Regulator voltage regulator diode

    AN-17

    Abstract: JESD79 LX1671 LX1672 LX1672-03CLQ LX1673 Si4842DY JESD89A
    Text: AN-17 DDR SDRAM Memory Termination AN-17 USING THE LX1672 AND LX1673 FOR DDR SDRAM MEMORY TERMINATION LX1672 Protected by US Patents: 6,285,571 & 6,292,378 I N T E G R A T E D Copyright 2002 Revision 1.2b, 3/8/2006 P R O D U C T S Microsemi Integrated Products


    Original     		PDF AN-17 LX1672 LX1673 ESRE181M04B ESRE271M02B MCH182CN104KK GMR219R60J475K AN-17 JESD79 LX1671 LX1672-03CLQ LX1673 Si4842DY JESD89A

    capacitor 2D

    Abstract: AN18 LX1671 Si4842DY
    Text: LX1671 PRODUCT DESIGN GUIDE AN18 LX1671 PR0DUCT DESIGN GUIDE Protected by US Patents: 6,285,571 & 6,292,378 I N T E G R A T E D Copyright 2000 Rev. 0.2d, 2006-03-08 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570


    Original     		PDF LX1671 LX1671 capacitor 2D AN18 Si4842DY

    5a2 zener diode

    Abstract: AN19 LX1671 LX1672 Si4842DY
    Text: LX1672 PRODUCT DESIGN GUIDE AN19 LX1672 PR0DUCT DESIGN GUIDE Protected by US Patents: 6,285,571 & 6,292,378 I N T E G R A T E D Copyright 2000 Rev. 0.2a, 2006-03-08 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570


    Original     		PDF LX1672 LX1672 5a2 zener diode AN19 LX1671 Si4842DY

    Untitled

    Abstract: No abstract text available
    Text: WF4M32-XXX5 4Mx32 5V NOR FLASH MODULE FEATURES  Access Times of 100, 120, 150ns  5 Volt Read and Write. 5V ± 10% Supply.  Packaging:  Low Power CMOS • 66 pin, PGA Type, 1.385" square, Hermetic Ceramic HIP Package 402 .  Data# Polling and Toggle Bit feature for detection of


    Original     		PDF WF4M32-XXX5 4Mx32 150ns 990CQFJ 502-G4T MIL-STD-883

    Untitled

    Abstract: No abstract text available
    Text: WF4M32-XXX5 4Mx32 5V NOR FLASH MODULE FEATURES  Access Times of 100, 120, 150ns  5 Volt Read and Write  Packaging:  Low Power CMOS • 66 pin, PGA Type, 1.385" square, Hermetic Ceramic HIP Package 402 .  Data# Polling and Toggle Bit feature for detection of


    Original     		PDF WF4M32-XXX5 4Mx32 150ns 990CQFJ MIL-STD-883 MIL-PRF-38534

    Untitled

    Abstract: No abstract text available
    Text: WF4M32-XXX5 4Mx32 5V NOR FLASH MODULE FEATURES  Access Times of 100, 120, 150ns  5 Volt Read and Write  Packaging:  Low Power CMOS • 66 pin, PGA Type, 1.385" square, Hermetic Ceramic HIP Package 402 .  Data# Polling and Toggle Bit feature for detection of


    Original     		PDF WF4M32-XXX5 4Mx32 150ns 990CQFJ

    Untitled

    Abstract: No abstract text available
    Text: WMF2M8-XXX5 2Mx8 MONOLITHIC NOR FLASH, SMD 5962-97609 FEATURES  Low Power CMOS  Data# Polling and Toggle Bit feature for detection of program or erase cycle completion.  Access Times of 90, 120, 150ns  Packaging: • 56 lead, Hermetic Ceramic, 0.520" CSOP Package 207 .


    Original     		PDF 150ns 64KBytes

    Untitled

    Abstract: No abstract text available
    Text: WMF2M8-XXX5 2Mx8 MONOLITHIC NOR FLASH SMD 5962-97609* FEATURES  Low Power CMOS  Data# Polling and Toggle Bit feature for detection of program or erase cycle completion.  Access Times of 90, 120, 150ns  Packaging: • 56 lead, Hermetic Ceramic, 0.520" CSOP (Package 207).


    Original     		PDF 150ns 64KBytes

    Untitled

    Abstract: No abstract text available
    Text: W764M32V1-XBX 256MB – 64Mx32 NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION  Single power supply operation The W764M32V1-XBX device is a 3V single power flash memory. The device utilizes two chips organized as 67,108,864 words. The


    Original     		PDF W764M32V1-XBX 256MB 64Mx32 W764M32V1-XBX 32-bit 16-bit 1024-byte fo2013

    Microsemi

    Abstract: No abstract text available
    Text: W764M32V1-XBX *PRELIMINARY 64Mx32 NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION  Single power supply operation The W764M32V1-XBX device is a 3V single power flash memory. The device utilizes two chips organized as 67,108,864 words. The


    Original     		PDF W764M32V1-XBX 64Mx32 W764M32V1-XBX 32-bit 16-bit 1024-byte Microsemi

    W764M32V1-XBX

    Abstract: No abstract text available
    Text: W764M32V1-XBX *PRELIMINARY 64Mx32 NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION  Single power supply operation The W764M32V1-XBX device is a 3V single power flash memory. The device utilizes two chips organized as 67,108,864 words. The


    Original     		PDF W764M32V1-XBX 64Mx32 W764M32V1-XBX 32-bit 16-bit 1024-byte prx32

    Untitled

    Abstract: No abstract text available
    Text: W764M32V-XSBX Not Recommended for New Designs — Replaced by W764M32V1-XBX 64Mx32 NOR Flash Multi-Chip Package 3.0V Page Mode Flash Memory  Hardware features FEATURES  Single power supply operation • Advanced Sector Protection • WP#/ACC input accelerates programming time when


    Original     		PDF W764M32V-XSBX W764M32V1-XBX 64Mx32 W764M32V1-XBX"

    Untitled

    Abstract: No abstract text available
    Text: W7264M32V1-XSBX W7464M32V1-XSBX *ADVANCED 512MB 2 x 64M x 32 / 1GB (4 x 64M x 32) NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION  Single power supply operation The W7264M32V1-XSBX device is a 3V single power flash memory and utilizes four chips organized as 67,108,864 words. The


    Original     		PDF W7264M32V1-XSBX W7464M32V1-XSBX 512MB W7264M32V1-XSBX W7464M32V1-XSBX 32-bit 16-bit 1024-byte

    Untitled

    Abstract: No abstract text available
    Text: MS29C4G48MAZAKC1-XX 4Gb NAND FLASH x16 / 2Gb LPDDR (x32) FEATURES GENERAL DESCRIPTION  Package: Microsemi package-on-package (PoP) MCP products combine NAND Flash and Mobile LPDRAM devices in a single MCP. These products target mobile applications with low-power, highperformance, and minimal package-footprint design requirements.


    Original     		PDF MS29C4G48MAZAKC1-XX MT29C4G48MAZAPACA-XIT"

    Untitled

    Abstract: No abstract text available
    Text: MS29C4G48MAZAKC1-XX *PRELIMINARY 4Gb NAND FLASH x16 / 2Gb LPDDR (x32) FEATURES GENERAL DESCRIPTION  Package: Microsemi package-on-package (PoP) MCP products combine NAND Flash and Mobile LPDRAM devices in a single MCP. These products target mobile applications with low-power, highperformance, and minimal package-footprint design requirements.


    Original     		PDF MS29C4G48MAZAKC1-XX MT29C4G48MAZAPACA-XIT"

    Untitled

    Abstract: No abstract text available
    Text: W78M64VP-XSBX 8Mx64 NOR Flash 3.3V Page Mode Multi-Chip Package FEATURES STANDARD FLASH MEMORY FEATURES  Access Times of 110, 120ns The device requires a 3.3 volt power supply for both read and write functions. Internally generated and regulated voltages are provided


    Original     		PDF W78M64VP-XSBX 8Mx64 120ns 13x22mm

    Untitled

    Abstract: No abstract text available
    Text: UM6000 / UM6200/UM6600 POWER PIN DIODES used successfully in switches in which low insertion loss at low bias current is required. The “A” style package for this series is the smallest Microsemi PIN diode package. It has been used successfully in many microwave


    Original     		PDF UM6000 UM6200/UM6600 UM6000/UM6200/UM6600 UM6000/UM6200/UM6600

    Untitled

    Abstract: No abstract text available
    Text: W78M32VP-XBX 8Mx32 NOR Flash 3.3V Page Mode Multi-Chip Package FEATURES GENERAL DESCRIPTION  Access Times of 110, 120ns The W78M32VP-XBX is a 256Mb, 3.3 volt-only Page Mode memory device.  Packaging The device offers fast page access times allowing high speed


    Original     		PDF W78M32VP-XBX 8Mx32 120ns W78M32VP-XBX 256Mb, 13x22mm 128Kb) DQ16-31

    UM6606

    Abstract: UM6000 UM6600 UM6001 UM6002 UM6006 UM6200 microsemi sm package UM601 UMX6001B
    Text: UM6000 / UM6200/UM6600 POWER PIN DIODES KEY FEATURES DESCRIPTION used successfully in switches in which low insertion loss at low bias current is required. The “A” style package for this series is the smallest Microsemi PIN diode package. It has been used successfully in many microwave


    Original     		PDF UM6000 UM6200/UM6600 UM6000/UM6200/UM6600 UM6000/UM6200/UM6600 UM6606 UM6600 UM6001 UM6002 UM6006 UM6200 microsemi sm package UM601 UMX6001B

    transient suppressor

    Abstract: DLTS-12 DLTS-12A DLTS-17 DLTS-17A DLTS-24 DLTS-30 IEC61000-4-4 MIL-PRF19500 SA4 marking
    Text: DLTS-5 thru DLTS-30 DATA LINE TRANSIENT SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE This series of Transient Voltage Suppressor TVS devices is packaged in a ceramic, dual-in-line, hermetically sealed package. These components offer 15 protective devices, unidirectional or bidirectional, common buss


    Original     		PDF DLTS-30 SA4-35 transient suppressor DLTS-12 DLTS-12A DLTS-17 DLTS-17A DLTS-24 DLTS-30 IEC61000-4-4 MIL-PRF19500 SA4 marking

    Untitled

    Abstract: No abstract text available
    Text: DLTS-5 thru DLTS-30 DATA LINE TRANSIENT SUPPRESSOR SCOTTSDALE DIVISION APPEARAN CE This series of Transient Voltage Suppressor TVS devices is packaged in a ceramic, dual-in-line, hermetically sealed package. These components offer 15 protective devices, unidirectional or bidirectional, common buss


    Original     		PDF DLTS-30 SA4-35

    u3g diode

    Abstract: diode 227j UM-49 Unitrode Semiconductor diode u3g
    Text: MICROSEMI CORP/ WATERTOWN 5DE » • TBMTTbB 001E3T0 Tbfl ■ U N I T PIN DIODE U M 4000SERIES UM4900 S E R IE S O 7 - f 5~~ Features • • • • Power dissipation to 37.5W Voltage ratings to 1000V Series resistance rated at 0.5Q Carrier lifetim e greater than 5/us


    OCR Scan     		PDF 001E3T0 4000SERIES UM4900 UM4000 40NC-2 u3g diode diode 227j UM-49 Unitrode Semiconductor diode u3g