Calculator Keypad and LCD
Abstract: CALVERT ELECTRONICS FDV303N engineered diffusers light dependent resistor simple LED work in 9v LX1991 LX1992 LX1993 AN23
Text: AN 23 LED DRIVER APPLICATIONS FOR PORTABLE PRODUCTS AN 23 LED DRIVER APPLICATIONS FOR PORTABLE PRODUCTS Application Engineer: Michael Calvert I N T E G R A T E D Copyright 2000 Rev. 1.0, 2002-12-30 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
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Original
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LX432
15KHz
UPS5819
FDV303N
Si2308)
CMD333UW
D333UW
Calculator Keypad and LCD
CALVERT ELECTRONICS
FDV303N
engineered diffusers
light dependent resistor
simple LED work in 9v
LX1991
LX1992
LX1993
AN23
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PDF
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boost converter application note
Abstract: TDS3034B AN22 AN-22 LX1741 LX1742 TCP202 LX7142
Text: LX1741/LX1742 BOOST CONVERTER APPLICATION NOTE LX1741 / LX1742 BOOST CONVERTER DESIGN HINT AN-22 Application Engineer: Michael Calvert I N T E G R A T E D Copyright 2002 Rev. 1.0, 2002-12-03 P R O D U C T S Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
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Original
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LX1741/LX1742
LX1741
LX1742
AN-22
LX741
boost converter application note
TDS3034B
AN22
AN-22
TCP202
LX7142
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PDF
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PTC10001
Abstract: POWER TECHNOLOGY COMPONENTS
Text: 6115950 MICROSEMI 0 2E C OR P/ PO WER E J P T C D T ' 3 3 - Z * f D E I hllSTSO D0DD4SS 3 I ~ . TECHNOLOGY ÒÒ4 5 2 " 1 10000 PTC 10001 ^"C Power Technology Components HIGH VOLTAGE DARLINGTON NPN TRANSISTORS 20 AMPERES 400 VOLTS FEATURES APPLICATIONS • High Voltage Rating - 400 Volts
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OCR Scan
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50/ts
200/iH
200/iH
PTC10001
POWER TECHNOLOGY COMPONENTS
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PDF
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Untitled
Abstract: No abstract text available
Text: MICROSEMI CORP/POQIER 27E D • bllSìSG Q00G532 1 « P T C T - 33-/3 TSB71020 I*TC TECHNOLOGY Power Transistor Chip, NPN 10 A, 200 V, tf = 35ns ■ Planar Epitaxial ■ C ontact Metallization: Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag ■ Chip Thickness: 22 mils
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OCR Scan
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Q00G532
TSB71020
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PDF
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Untitled
Abstract: No abstract text available
Text: MICROSEMI CORP/POWER 27E D • iallSTSQ D Q G D S M Q G ■ P T C y _ 3 3 _ / 3 TSB125100 TECHNOLOGY Power Transistor Chip, NPN 25 A, 1000 V, tf = 50 ns ■ Planar Epitaxial ■ Contact Metallization: ■ Chip Thickness: 22 mils Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag
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OCR Scan
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TSB125100
18x53
20x48
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PDF
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Untitled
Abstract: No abstract text available
Text: • Microsemi m m Santa Ana, CA m 1N6817 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 Progress Powered b y Technology (MSASC25W100K) Features <ide p a s d v M e d structure fa r v«ry low le akage currents mrd ring protection to r in c re ^ |e d reverse- energy c a p a b it y i
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OCR Scan
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1N6817
MSASC25W100K)
1N6817)
1N6817R)
MSC1034A
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PDF
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MC714
Abstract: MC-65A/R-DC24V-L
Text: niCROSEMI CORP S T E tillSflbS D GGDSGn use Qt T M C5600MC5607 Microsemi Corp. SANTA ANA. CA s c o r r s D A L t. a /. For m ore information 714 979-8220 FEATURES • • • • • • • MICRO SIZE HIGH VOLTAGE SILICON RECTIFIERS METALLURGICALLY BONDED, HERMETICALLY SEALED
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OCR Scan
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9Ww99ft
MC5600-MC5607
MC5600-MC5603:
MC5604-MC5607:
MC5600-MC5607)
I25VOLTAGE
100mA
MC714
MC-65A/R-DC24V-L
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PDF
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Untitled
Abstract: No abstract text available
Text: 6115950 MICROSEMI CORP/POWER 71C 00314 D *7" ’• j r j f '/ C j 7ll^|bllSTS0 0DD0314 ' E Series PTC 403, PTC 409 High Voltage NPN Transistors 3.5 Amperes • 400 Volts FEATURES • High Voltage Rating - 4 0 0 Volts • Industrial and Military Applications
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OCR Scan
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0DD0314
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PDF
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5609
Abstract: 5609 transistor TSB25020
Text: 4SE D m bllS'ISO OOOOSbD b4D « P T C 3^ MICROSEMI CORP/POUER - ^ TSB25020 Power Transistor Chip, NPN 50 A, 200 V, tf = 50ns • Planar Epitaxial ■ Contact Metallization: Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag ■ Chip Thickness: 22 mils ■ Applications:
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OCR Scan
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TSB25020
5609
5609 transistor
TSB25020
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PDF
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IC AL 6001
Abstract: rjz ce 6002 transistor PTC6003
Text: 6115950 MICROSEMI 02E CORP/POWER □5 00448 D D e | ^ 1 1 5 ^ 5 0 o p p c m ita 1 f PTC PTC PTC PTC TECH N O LO GY Power Technology Components 6000 6001 6002 6003 FAST-SWITCHING HIGH POWER DARLINGTON TRANSISTORS 15 AMPERES 500 VOLTS Ö -o * 0 384| JÔ50 -{2663! MAX“
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OCR Scan
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6001I
6002PTC
IC AL 6001
rjz ce
6002 transistor
PTC6003
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PDF
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skp30a
Abstract: osi 5k SKP18A skp40a
Text: 5K P5.0 thru 5KP110A Microsemi Corp. SANTA ANA. i A S C O J T S D U .k .A / Kìi moie inloiindtion c.iil 602 -941-6300 - FEATURES Designed for use on the output of switching power supplies, voltage tolerances are referenced to the power supply output voltage level.
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OCR Scan
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5KP110A
1000/usec
5KP64
5KP64A
SKP90
5KP90A
SKP100
5KP100A
5KP110
skp30a
osi 5k
SKP18A
skp40a
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PDF
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QQG1703
Abstract: No abstract text available
Text: bllSñbS DGQ1703 Ifll • M S C 5SE D T-II-Z3 TS-7 MICROSEMI CORP MicrojsemiCorp. 9 rfieaoae experts SCOTTSDALE, AZ SANTA AHA, CA FormoreinfonnationcaU; '" s ’ - FEATURES TRANSIENT ABSORPTION •■' ZENER • PROTECTS T T L ECL. DTL, MOS, CMOS AND MSI INTEGRATED CIRCUITS OPERATING ON POWER
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OCR Scan
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QQG1703
T-//-23
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PDF
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Untitled
Abstract: No abstract text available
Text: MICROSEMI CORP/POüJER B7E D • bllSTSD CICIQ053Q ñ ■ PTC T-^3~/3 TSA63065 J P T C TECHNOLOGY Power TVansistor Chip, NPN 30 A, 650 V, tf = 0.1 ps ■ Planar Epitaxial ■ Contact Metallization: Base and Emiller-Aluminum Collector Au or Ti/Ni/Ag ■ Chip Thickness: 22 mils
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OCR Scan
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CICIQ053Q
TSA63065
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PDF
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0211s
Abstract: 1N4728 1N4764 DO-213AB MLL4728 MLL4730A MLL4731A MLL4764 HLL47
Text: MICROSEni CORP STE D nsc b l l 5 ñ t i S D002114 4kT MLL4728 thru MLL4764 Microsemi Corp. 5 C O T T S / A i.L . A Z For more information, call: S A M 'A A S A , CA 6 0 2 ) <MMOOO D E S C R I P T I O N /F E A T U R E S • • • • LEADLESS GLASS ZENER
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OCR Scan
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D002114
MLL4728
MLL4764
1N4728
1N4764
DO-41
0211s
DO-213AB
MLL4728
MLL4730A
MLL4731A
MLL4764
HLL47
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PDF
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ICT-10
Abstract: ICT-10C ICT-12 ICT-15 ICT-18 ICT-22 ICT-36 ICT-45 ICT-45C
Text: - ^ -V m cROSErii STE coRP D LllSflbS Microsemi Corp. 9 The Mode expels •V/l:V/4 -4A.-I, C-! scoi i^n u /■:. u 0002073 Gib ICT-5 thru ICT-45C For more information ca 602 941-6300 FEATURES • THIS S ER IES O F TflZ DEVICES IS DESIGNED TO PR O T EC T BIPO LAR , MOS AND S C H O TTK Y
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OCR Scan
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L115at
ICT-45C
1000ms
ICT-10
ICT-10C
ICT-12
ICT-15
ICT-18
ICT-22
ICT-36
ICT-45
ICT-45C
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PDF
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MC458A
Abstract: MC486B MC456A MC457A MC459A MC461A kovar 250 mw ultra stable diode
Text: M C 4 5 6 A - M C 486 B Microsemi Corp. ' The diode experts SANTA ANA, CA SCOTTSDALE, AZ F o r m ore in fo rm a tio n call. 714 979-8220 PELLET DIODES FE A T U R E S • • • • M icrom iniature package. Standard recovery. Stable surface films integrally bonded to the d e vice crystal.
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OCR Scan
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MC456A
MC486B
MIL-S-19500.
MC457A
MC458A
-125V
MC459A
-175V
MC461A
kovar
250 mw ultra stable diode
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PDF
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Untitled
Abstract: No abstract text available
Text: M I C R O SE MI CORP STE D • bllSfitS Ësmsmm§Ëmmmmasmamsmsaiimmm: Microsemi Corp. S iM .\ 1 \.-l, A □o g i ^ m 2T3 ■ nsc 1N 3643 thru 1N 3647 1N5181 thru 1N5184 S I ( / rsi>. i 1.1. I /. For more information call: (714) 979-8220 / FEATURES • MICROMINIATURE PACKAGE
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OCR Scan
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1N5181
1N5184
100mA
10-30/1N3643-47
40-100/1N5181
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PDF
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curve tracer
Abstract: 5609 5609 transistor TSA65520
Text: 4SE D • b l l S S S O O O O O S S M 347 « P T C MICROSEMI CORP/POUER TSA65520 Power Transistor Chip, NPN 55 A, 200 V, tf= 0.1 fis ■ Planar Epitaxial ■ Contact Metallization: Base and Cmitier-Aiummum Collector Au or Ti/Ni/Ag ■ Chip Thickness: 22 mils
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OCR Scan
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TSA65520
Mx66naU
38x31
curve tracer
5609
5609 transistor
TSA65520
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PDF
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Untitled
Abstract: No abstract text available
Text: Microsemi Corp. ,/ SANTA ANA, CA s ' The dioae expert SCOTTSDALE, AZ M L L 5 22 1 thru M LL5281 For more information call: 602 941-6300 D E S C R IP T IO N /F E A T U R E S • LEAOLESS PACKAGE FOR SURFACE MOUNT TECHNOLOGY • IDEAL FOR HIGH DENSITY MOUNTING
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OCR Scan
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LL5281
1N5221
1N528wn
LL522IA,
MLL5242A,
MLK5243A.
LL528IA,
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PDF
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transient absorption zener
Abstract: SOV12 SOV15 SOV18 SOV24 SOV28
Text: MICROSEriI STE D CORP biisab 5 X DOOEm? x SST i ns c S0V5.0 thru SOV28 Microsemi Corp. i Thfc d'ode e SASTAANA. 4 SCOTTSDALE, A7. H tr in o re in in rm u lm n call' (602 9 4 I-M Q 0 FEATURES • VOLTAGES FROM 5.0 TO 28V STANO-OFF (VWM) • LOW CLAMPING RATIO
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OCR Scan
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SOV28
SOV18
SOV24
SOV28
transient absorption zener
SOV12
SOV15
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PDF
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in6303a
Abstract: in6267 diode in6303a CD6283 A2 5170 CD5908 CD6267 CD6303A in6303
Text: Microsemi Corp. s a k ta a n a , ca s c o tts d a le , a z S2^i“ APPLICATION This TAZ* series has a peak pulse power rating o f 1500 watts for one millisecond. It can protect integrated circuits, hybrids, CMOS, MOS and other voltage sensitive components that are used in a broad range
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OCR Scan
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5KCD200A,
CD5908
CD6267
CD6303A
in6303a
in6267
diode in6303a
CD6283
A2 5170
CD6303A
in6303
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PDF
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Untitled
Abstract: No abstract text available
Text: niCROSEni coRP 5TE D • bllSfibS D0050ti3 17? ■ Microsemi Corp. 5 r-r -.occ c o i v i si o i i m '-u i:, SANTA A S A . CA i/ For mon; intormaiinn call 602 941-630Û FEA TU RES These TAZ devices are high power; medium voltage Transient Suppressors designed for protecting precision industrial electronic equipment. They are
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OCR Scan
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D0050ti3
1000//sec
Repetiti299
15KP240
15KP240A
1SKP260A
15KP280
15KP280A
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PDF
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marking 59E
Abstract: MC458A MC456A MC457A MC459A MC486B
Text: niCRosEm coRP ste d • / b i is at s 0 0 0 2 0 1 0 i E 3 ■ rise M C 456A - M C 486B Microsemi Corp. Y The tîtoée e x p e rh j SA M A A .VX, CA F or m ore inform ation call: SC O TTSD A LE. A Z / 714 979-8220 / MICRO-DIODES FEATURES • • • • Microminiature package.
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OCR Scan
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MC456A
MC486B
L-S-19500.
MC463A
-175V
MC464A
-125V
MC482B
MC483B
MC484B
marking 59E
MC458A
MC457A
MC459A
MC486B
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PDF
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IN6370
Abstract: IN6360 1N6356 1N6372 MPT-10 MPT-12 MPT-45C
Text: P l ICRO SE f ll S 'iE CORP D T i i s a b s 0 0 0 2 0 4 ? T2M • nsc I Microsemi Corp. ¡ ,O0Cc f The I ■S.-U/.1 .1 v-l. C 1 w im SCOTISPAU. 1/ ■or more information call: (602) 941-6300 FEATURES • DESIGNED TO PROTECT BIPOLAR AND MOS MICROPROCESSOR BASED SYSTEM S.
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OCR Scan
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00Q2047
IN6370
IN6360
1N6356
1N6372
MPT-10
MPT-12
MPT-45C
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PDF
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