MICROSEMI AVALANCHE Search Results

MICROSEMI AVALANCHE Result Highlights (5)

Part	Manufacturer	Description
HA3905-	Coilcraft Inc	Transformer, for Microsemi UC3844, SMT, RoHS
NR8360JP-BC-AZ	Renesas Electronics Corporation	φ 30 μm InGaAs Avalanche Photo Diode 14-PIN DIP Module With TEC
NR8800FS-CB-AZ	Renesas Electronics Corporation	φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications
NR8300FP-CC-AZ	Renesas Electronics Corporation	1000 to 1600 nm Optical Fiber Communications φ 30 µm InGaAs Avalanche Photo Diode Module
NR8800FS-CB-AZ/SH	Renesas Electronics Corporation	φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications

MICROSEMI AVALANCHE Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
VRF2933FL Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301 Text: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system	Original	PDF	MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
LE79Q2281 Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572 Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security	Original	PDF
sot-227 footprint Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.	Original	PDF
SP6-P Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.	Original	PDF	10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
lm324 inverter sensing circuit Abstract: CCFL INVERTER TRANSFORMERS Royer oscillator Notebook lcd inverter schematic 50khz resonant frequency Royer oscillator circuit diagram SGE2694-1 ccfl inverter schematic ccfl transformer buck royer inverter lcd Text: Microsemi Application Note ANAN-13 LX1686 Direct Drive CCFL Inverter Design Reference George Henry Microsemi – Power Management Group L I N F I N I T Y Copyright 2000 Rev. 1.5, 9.01 D I V I S I O N AN-13 LX1686 Direct Drive CCFL Inverter Design Reference	Original	PDF	ANAN-13 LX1686 AN-13 lm324 inverter sensing circuit CCFL INVERTER TRANSFORMERS Royer oscillator Notebook lcd inverter schematic 50khz resonant frequency Royer oscillator circuit diagram SGE2694-1 ccfl inverter schematic ccfl transformer buck royer inverter lcd
smps 1000W Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain	Original	PDF	des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
UM9441 UM9442 Abstract: UMM5050 NKT 0039 HUM4020 NTE Semiconductor Technical Guide and Cross Refer wireless mobile charging through microwaves MSC 9415 hf power combiner broadband transformers mpd101 Structure rotary phase shifter Text: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of	Original	PDF	MPD-101A UM9441 UM9442 UMM5050 NKT 0039 HUM4020 NTE Semiconductor Technical Guide and Cross Refer wireless mobile charging through microwaves MSC 9415 hf power combiner broadband transformers mpd101 Structure rotary phase shifter
UM9442 Abstract: UMM5050 MSC 9415 pin diodes radiation detector MSC 501 302 diode PIN DIODE DRIVER CIRCUITS "Microwave Diode" UM9441 Microwave PIN diode hf power combiner broadband transformers Text: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of	Original	PDF	MPD-101A UM9442 UMM5050 MSC 9415 pin diodes radiation detector MSC 501 302 diode PIN DIODE DRIVER CIRCUITS "Microwave Diode" UM9441 Microwave PIN diode hf power combiner broadband transformers
SCR Crowbar Abstract: crowbar thyristor 200A Text: MicroNote Series 105 by Kent Walters and Mel Clark, Microsemi Scottsdale What is a Thyristor Surge Protective Device and How does it Work? Thyristor surge protective devices TSPDs are avalanche triggered components used to protect vulnerable circuits from moderate to	Original	PDF
1N5614US Abstract: 1N5620US 1N5614 1N5616US 1N5618US 1N5622 1N5622US EIA-481-B 1N5616US JANTX Text: 1N5614US thru 1N5622US VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE Package “A” or D-5A IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES	Original	PDF	1N5614US 1N5622US 1N5614 1N5622 MILPRF-19500/427 1N5622) 1N5614US 1N5620US 1N5616US 1N5618US 1N5622US EIA-481-B 1N5616US JANTX
1N5614US Abstract: 1N5614 1N5616US 1N5618US 1N5620US 1N5622 1N5622US EIA-481-B Microsemi micronote series 050 Text: 1N5614US thru 1N5622US VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE Package “A” or D-5A IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES	Original	PDF	1N5614US 1N5622US 1N5614 1N5622 MILPRF-19500/427 1N5622) 1N5614US SA7-45 1N5616US 1N5618US 1N5620US 1N5622US EIA-481-B Microsemi micronote series 050
2N2369 avalanche Abstract: Microsemi micronote series 050 Semiconductor Nuclear Radiation Detector DIODE ga101 pin diodes radiation detector UM9441 Microsemi Generic Diode nuclear radiation detector diode GA100 radiation ionizing dose TID detector Text: Spring 1998 MicroNote Series 050 by Kent Walters, Microsemi Scottsdale Radiation Hardened Performance of Discrete Semiconductors Many system designs have required radiation hardness assurance for semiconductor products. In earlier years this primarily dealt with military	Original	PDF
zener Abstract: zener diode JEDEC 1N 2 volt zener Text: MicroNote Series 203 by Kent Walters, Microsemi Scottsdale Zener Voltage Regulation With Temperature Zener diodes are affected by temperature changes associated with their voltage temperature coefficient αvz . This characteristic αvz is usually included in the	Original	PDF
Untitled Abstract: No abstract text available Text: 1N5614US thru 1N5622US VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARAN CE Package “A” or D-5A IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEAT U RES	Original	PDF	1N5614US 1N5622US 1N5614 1N5622 MILPRF-19500/427 1N5614US SA7-45

spice germanium diode Abstract: 1n4000 DIODE 1N4000 silicon diodes pn junction diode germanium rectifier diode transient suppressor spice model MicroNote 1n4000 sERIES DIODES 1N4000 low leakage diodes spice Text: Spring/Summer 1998 MicroNote Series 010 by Kent Walters, Microsemi Corporate Applications How to Quickly Obtain Spice Parameters for Diodes Component SPICE modeling has become a frequently used analysis tool by design engineers to evaluate circuit performance. This MicroNote	Original	PDF
Untitled Abstract: No abstract text available Text: LC6.5 thru LC170A, e3 1500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE DO-13 DO-202AA IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES • • • • • • •	Original	PDF	LC170A, IEC61000-4-5 RTCA/DO-160D IEC61000-4-2 IEC61000-4-4. LC170A DO-13 DO-202AA)
BHB0002T Abstract: BHB0004T BHB0006T BHB0008T BHB0010T Text: MICROSEMI CORP/ R P M 31E D • b l l b O M O Q O O P O W i T ■ RPM T -2 S -0 7 5 -ss = r= b a m A R Q r M i n ■ " B■ 735 S. VINEWOOD ST. ESCONDIDO, CA 92025 619 432-6411 p/\X (619) 432-9385 A MICROSEMI c o m p a n y 25 AMP SILICON AVALANCHE RECTIFIERS	OCR Scan	PDF	BHB0002T BHB0004T BHB0006T BHB0008T BHB0010T
ic 437 Abstract: JANTX1N5518B-1 STD 9308 jan1n5518bur-1 Text: Low Voltage Avalanche Zeners Part Number Microsemi Division Package Outline Type : 1N5518B D035 1N5519B (D035) 1N5520B (D035) 1N5521B (0035) 1N5522B (D035) 1N5523B (D035) 1N5S24B (D035) 1N5525B (D035) 1N5526B (D035) 1N5527B (D035) 1NS528B (D035) 1N5529B (D035)	OCR Scan	PDF	DO-35 ic 437 JANTX1N5518B-1 STD 9308 jan1n5518bur-1
"electromagnetic pulse" Abstract: No abstract text available Text: WORKSHEET: Transient Voltage Suppressor Modules CUSTOM ASSEMBLY DESIGN INFORMATION FILL IN ONLY THE INFORMATION WHICH IS KNOWN OR APPLICABLE MICROSEMI USE ONLY REPRESENTATIVE (FIRM & INDIVIDUAL) DATE CUSTOMER ENGINEER STATE STREET TELEPHONE NUMBER A REA CODE	OCR Scan	PDF	ConditiD-704 MIL-STD-1275 MIL-STD-1399 "electromagnetic pulse"
V627 Abstract: VE47 VE67 avalanche VE68 1000V controlled avalanche rectifiers 190215 VE28 VE108 Text: MICROSEMI CORP/ MICRO bllSÌO? Q001Q35 =1 • T-£L3-o5 Quality 1 Amp Epoxy Bridge Rectifiers ve Series Controlled Avalanche Series with 250V, 450V, 650V, and 850V Minimum Avalanche Ratings Non-controlled Avalanche Series with 25V, 50V, 100V, 200V, 400V, 600V, 800V, and 1000V VRRM Ratings	OCR Scan	PDF	Q001Q35 V627 VE47 VE67 avalanche VE68 1000V controlled avalanche rectifiers 190215 VE28 VE108
TS09100 Abstract: TS04700 TS05100 TS05600 TS0600 TS06200 TS06800 TS07100 TS07500 TS10000 Text: TS04700 thru T S 10000 lîîK^TM Microsemi Corp. ZENER DIODES FEATU RES • Low voltage avalanche zener diodes. • Considerably sharper breakdown than standard 4-10 v o lt zeners. • Suppressed field emission breakdown mechanism produces avalanche breakdown w ith sharpest knee available.	OCR Scan	PDF	TS04700 TS10000 DO-35 100mV 500mW. 100mA: TS08200 TS08700 TS09100 TS04700 TS05100 TS05600 TS0600 TS06200 TS06800 TS07100 TS07500 TS10000
V348 Abstract: v354 V342 V344 V346 V350 V351 V3510 V352 V356 Text: MICROSEMI CORP/ MICRO 5bE D • bllS'îG? 0Q0132S Q5b ■ MÛL / 7 0 1 -1 5 - MICRO QUALITY / SEMICONDUCTOR, INC 7^ 3^5 ^ ^ 3 Amp Diffused Silicon Epoxy Rectifiers with 200 Amp Peak Surge Rating Controlled Avalanche Types with 250V, 450V, 650V, and 850V Minimum Avalanche Ratings	OCR Scan	PDF
ZENER DIODE 437 Abstract: diode zener ZL 7 diode zener ZL 8 Text: 1N 5518 thru 1N 5546 Microsemi Corp. ' The dtode experts SCOTTSDALE, A l For more information call: 6(0 941-6300 ; LOW VOLTAGE AVALANCHE DIODES DO-35 FEATURES • LOW ZENER NOISE SPECIFIED • LOW ZENER IM PEDANCE • LOW LEAKAGE CURRENT • HERMETICALLY SEALED G LA SS PACKAGE	OCR Scan	PDF	1N551B-1 1N5546B-1 MIL-S-19500/437 DO-35 DD03fiD7 ZENER DIODE 437 diode zener ZL 7 diode zener ZL 8
VE67 Abstract: ve47 AC/ve47 Text: MICROSEMI CORP/ MICRO EBR SbE T> • busso? 7 ^ 2 3 - OS MICRO QUALITY / 0001S-ÎS m 3 B M L SEMICONDUCTOR, INC 1 Amp Epoxy Bridge Rectifiers ve Series Controlled Avalanche Series with 250V, 450V, 650V, and 850V Minimum Avalanche Ratings Non-controlled Avalanche Series with 50V, 100V,	OCR Scan	PDF	0001S-Ã VE108 VE67 ve47 AC/ve47

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MICROSEMI AVALANCHE Search Results

MICROSEMI AVALANCHE Result Highlights (5)

MICROSEMI AVALANCHE Datasheets Context Search

VRF2933FL

LE79Q2281

sot-227 footprint

SP6-P

lm324 inverter sensing circuit

smps 1000W

UM9441 UM9442

UM9442

SCR Crowbar

1N5614US

1N5614US

2N2369 avalanche

zener

Untitled

spice germanium diode

Untitled

BHB0002T

ic 437

"electromagnetic pulse"

V627

TS09100

V348

ZENER DIODE 437

VE67