MICRON Q-FLASH MEMORY Search Results

MT29F32G08ABAAA

Abstract: MT29F32G08ABAAAWP MT29F32G08ABAAAWP-I mt29f32g08aba MT29F32G08 MT29F32G08A MT29F32G MT29F32G08ab
Contextual Info: Specifications Data Sheets B~s/Cell: ~ Datasheet: 3216411281256Gb Async/Sync NAND M 73Al Q SLC Brand: Micron Bus Wi<hh: xa Chill Em1ble: Single Component Density: 32Gb Depth: 4Gb Fall: Micron Family: NAND Flash Flash Vohage: 1.8V Generation (primary : First

MT29F128G08AJAAAWP-ITES

Abstract: MT29F128G08AJAAAWP-IT MT29F128G08AJAAAWP-I MT29F128G08AJAAA MT29F128G08AJAAAWP MT29F128 mt29f128g08 MT29F128G
Contextual Info: Specifications Data Sheets B~s/Cell: ~ Datasheet: 3216411281256Gb Async/Sync NAND M 73Al Q SLC Brand: Micron Bus Wi<hh: xa Chill Em1ble: Single Component Density: 128Gb Depth: 16Gb Fall: Micron Family: NAND Flash 110 : Common Mmmfacturer: Micron Mode Operation: Single Die

MT29F256G08

Abstract: MT29F256G08a MT29F256G08au MT29F256G MICRON NAND 256gb nand flash
Contextual Info: Specifications Data Sheets B~s/Cell: ~ Datasheet: 3216411281256Gb Async/Sync NAND M 73Al Q SLC Brand: Micron Bus Wi<hh: x8 CE Chill Count: 4 Chill Enable: Single Component Density: 256Gb Fall: Micron Family: NAND Flash Generation (l>rimaly : First Generation

MT29F64G08

Abstract: MT29F64G08AECABH1 MT29F64G08AE
Contextual Info: Specifications Data Sheets B~s/Cell: ~ Datasheet: 3216411281256Gb Async/Sync NAND M 73Al Q SLC Brand: Micron Bus Wi<hh: xa CE Chill Count: 2 Chill Enable: Single Component Density: 64Gb Fall: Micron Family: NAND Flash Generation (l>rimaly : Third Generation

mt29f128g08

Abstract: MT29F128 MT29F128G08a MT29F128G08AM
Contextual Info: Specifications Data Sheets B~s/Cell: ~ Datasheet: 3216411281256Gb Async/Sync NAND M 73Al Q SLC Brand: Micron Bus Wi<hh: xa CE Chill Count: 4 Chill Enable: Single Component Density: 128Gb Depth: 16Gb Fall: Micron Family: NAND Flash Generation (l>rimaly : First

Contextual Info: Specifications Data Sheets B~s/Cell: ~ Datasheet: 3216411281256Gb Async/Sync NAND M 73Al Q SLC Brand: Micron Bus Wi<hh: xa CE Chill Count: 4 Chill Enable: Single Component Density: 128Gb Depth: 16Gb Fall: Micron Family: NAND Flash Generation (l>rimaly : First

MT29F64G08AFAAAWP

Abstract: MT29F64G08 MT29F64G08AFAAA MT29F64G08AFAAAWP-IT MT29F64G08A MT29F64G08AFA MT29F64G08AFAAAWP-I
Contextual Info: Specifications Data Sheets B~s/Cell: ~ Datasheet: 3216411281256Gb Async/Sync NAND M 73Al Q SLC Brand: Micron Bus Wi<hh: xa Chill Em1ble: Single Component Density: 64Gb Fall: Micron Family: NAND Flash Generation (l>rimary : First Generation 110 : Common 110 Channels: 1

MT29F64G08AFAAAWP

Abstract: MT29F64G08 MT29F64G08AFAAA MT29F64G08A MT29F64G
Contextual Info: Specifications Data Sheets B~s/Cell: ~ Datasheet: 3216411281256Gb Async/Sync NAND M 73Al Q SLC Brand: Micron Bus Wi<hh: xa Chill Em1ble: Single Component Density: 64Gb Fall: Micron Family: NAND Flash Generation (l>rimary : First Generation 110 : Common 110 Channels: 1

Contextual Info: PRELIMINARY 8Mb SMART 3 BOOT BLOCK FLASH MEMORY MICRON I T O tW Q L ttffi INC. MT28F800B3 MT28F008B3 FLASH MEMORY 3V Only, Dual Supply Smart 3 FEATURES • Boot block architecture: 16K B/8K -w ord b o o tb lo ck (protected) Two 8K B /4K -w ord param eter blocks

MT29F4G08

Abstract: MT29F4G16 MT29F4G08abada MT29F8G16 MT29F8G08 MT29F8G16ADBDA MT29F4G16ABADAH4 MT29F4G08ABADAH Micron MT29F8G MT29F4G08ABADAH4
Contextual Info: Micron Confidential and Proprietary 4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4, MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP, MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4,

N25Q256A

Abstract: N25Q256A13E N25Q256a13 marking mlp8 N25Q
Contextual Info: 3V, 256Mb: Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q256A Features • • • • • • • • • • • • • • • • • Write protection – Software write protection applicable to every

Contextual Info: PRELIMINARY 256K, 512K x 16 BOOT BLOCK FLASH MEMORY MICRON I TECHNOLOGY, INC. MT28F400B5 ET, MT28F800B5 ET FLASH MEMORY Smart 5 Extended Temperature FEATURES PIN ASSIGNMENT Top View • Extended tem perature range operation: -40°C to +85°C • Boot block architecture:

Contextual Info: 128Mb, 3V, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q128A Features • • • • • • • • • • • • • Write protection – Software write protection applicable to every

Contextual Info: 512Mb, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q512A Features • • • • • • • • • • • • • • • • • • Write protection – Software write protection applicable to every

Contextual Info: PRELIMINARY 2 MEG, BIOS-OPTIMIZED, BOOT BLOCK FLASH MEMORY MICRON I QUANTUM DEVICES, INC. FLASH MEMORY MT28F200C1 MT28F002C1 FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks (96KB and 128KB)

Contextual Info: ADVANCE m i c r o 512K x 16, 1 MEG x 8 BOOT BLOCK FLASH MEMORY n FLASH MEMORY MT28F800B3 FEATURES PIN ASSIGNMENT Top View • Eleven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks • 3V-only, dual-supply operation:

Contextual Info: PRELIMINARY 128K x 16, 256K x 8 SMART 3 BOOT BLOCK FLASH MEMORY MICRON' I TECHNOLOGY, INC. MT28F200B3 FLASH MEMORY 3V Only, Dual Supply Smart 3 FEATURES PIN ASSIGNMENT (Top View) • Five erase blocks: 16K B/8K -w ord boot block (protected) Tw o 8K B /4K -w ord param eter blocks

Contextual Info: 8Mb SMART 5 BOOT BLOCK FLASH MEMORY M IC R O N I TECHNOLOGY, INC. FLASH MEMORY 5V Only, Dual Supply Smart 5 FEATURES • Eleven erase blocks: 16K B/8K -w ord boot block (protected) Tw o 8K B /4K -w ord param eter blocks Eight m ain m em ory blocks • Sm art 5 technology (B5):

MT28F004VG

Contextual Info: PRELIMINARY MICRON MT28F004 512K x 8 FLASH MEMORY 512K x 8 I 5V/12V, BOOT BLOCK BOOT BLOCK FLASH MEMORY FLASH MEMORY FEATURES • S even e rase blocks: 16KB b o o t block protected T w o 8KB p a ra m e te r blocks F o u r m a in m e m o ry blocks • 5V ±10% Vcc; 12V ±5% Vpp

Contextual Info: 256K, 512K x 16 BOOT BLOCK FLASH MEMORY M IC R O N I TECHNOLOGY, INC. MT28F400B5 ET, MT28F800B5 ET FLASH MEMORY Smart 5, Extended Temperature FEATURES PIN ASSIGNMENT Top View • Extended tem perature range operation: -40°C to +85°C • Boot block architecture:

Contextual Info: PRELIMINARY FLASH MEMORY MT28F400B1 VET, MT28F800B1 VET, MT28F002B1 VET, MT28F004B1 VET, MT28F008B1 VET Low Voltage, Extended Temperature FEATURES PIN ASSIGNMENT Top View • Extended temperature range operation: -40°C to +85°C for Vcc = 3V to 3.6V -25°C to +85°C for Vcc = 2.7V to 3.6V

Contextual Info: P R EL IM IN A R Y EXTENDED TEMPERATURE B O O T B L O C K F L ASH M E M O R Y MICRON I QUANTUMDevices, INC. MT28F400B1 VET, MT28F800B1 VET, MT28F004B1 VET, MT28F008B1 VET FLASH MEMORY L o w Voltage, Extended Tem perature FEATURES PIN ASSIGNMENT Top View

Contextual Info: PRELIMINARY SMART 3 BOOT BLOCK FLASH MEMORY TECHNOLOGY, INC. FLASH MEMORY MT28F8° 0B3 MT28F008B3 3V Only, Dual Supply Smart 3 FEATURES GENERAL DESCRIPTION • Boot block architecture: 16K B/8K -w ord boot block (protected) Tw o 8K B /4K -w ord param eter blocks

Contextual Info: ADVANCE Quan tum d e v ic e s , in c . FLASH MEMORY 256K x 8 FEATURES • Five erase blocks: - 16KB boot block protected -Two 8KB parameter blocks -One 96KB memory block - One 128KB memory block • Low power: 100|j.A standby; 60mA active, M A X • 5V±10% read; 12V±5% write/erase