Micron Technology
Abstract: No abstract text available
Text: Micron DRAM Products Overview August 2013 John Quigley – Micron FAE 2012 Micron Technology, Inc. All rights reserved. Products are warranted only to meet Micron’s production data sheet specifications. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Dates are estimates only. Drawings are not to scale. Micron and
|
Original
|
20Note/DRAM/TN4102
TN-41-04:
TN-41-13:
TN-46-02:
TN-46-06:
TN-46-11:
TN-46-14:
TN-47-19:
TN-47-20:
Micron Technology
|
PDF
|
XH018
Abstract: No abstract text available
Text: 0.18 m Process Family: XH018 0.18 Micron Modular Analog Mixed HV Technology DESCRIPTION The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron
|
Original
|
XH018
XH018
18-micron
|
PDF
|
fan 7320
Abstract: atmel 936 ttl buffer MG2014P MG2044P MG2142P MG2270P TM1019 radiation hard PLL OAI22 capacitance
Text: MG2RTP Radiation Hardened 0.5 Micron Sea of Gates Introduction The MG2RTP series is a 0.5 micron, array based, CMOS product family. Several arrays up to 490k cells cover all system integration needs. The MG2RTP is manufactured using SCMOS3/2RTP, a 0.5 micron drawn, 3 metal
|
Original
|
OAI22
fan 7320
atmel 936
ttl buffer
MG2014P
MG2044P
MG2142P
MG2270P
TM1019
radiation hard PLL
OAI22 capacitance
|
PDF
|
memory 9652
Abstract: No abstract text available
Text: FOR IMMEDIATE RELEASE Contact: Grant Jones Micron Technology, Inc. 208 368-4400 Web Site URL <http://www.micron.com> Fax-on-demand: (800) 239-0337 MICRON TECHNOLOGY, INC., REPORTS RESULTS FOR THE THIRD FISCAL QUARTER OF 2000 Boise, Idaho, June 22, 2000 - Micron Technology, Inc., today reported quarterly net
|
Original
|
|
PDF
|
14020
Abstract: MG2000 MG2001 MG2002 MG2004 MG2010 MG2044 MG2055
Text: MG2 0.5 Micron Sea of Gates Introduction The MG2 series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2 is manufactured using SCMOS3/2, a 0.5 micron drawn, 3 metal layers CMOS process.
|
Original
|
BOUT12
14020
MG2000
MG2001
MG2002
MG2004
MG2010
MG2044
MG2055
|
PDF
|
rpp1k1
Abstract: No abstract text available
Text: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate
|
Original
|
XT018
XT018
18-micron
rpp1k1
|
PDF
|
UM 9515
Abstract: D5A-3210 D5A-1100 D5A-2100 D5A-3200 D5A-7400 plunger grease OMRON m5-1 D5A-3310 E39-F4
Text: High-Precision Switch D5A High-Precision Switch for Detecting Micron Unit Displacement H H 1-micron or 3-micron repeat accuracy H 24 VDC solid state output or 12 VDC/ 24 VAC contact output H Solid state output model has LED indicator for ease of monitoring operation
|
Original
|
1-800-55-OMRON
UM 9515
D5A-3210
D5A-1100
D5A-2100
D5A-3200
D5A-7400
plunger grease
OMRON m5-1
D5A-3310
E39-F4
|
PDF
|
32M DPRAM
Abstract: MG2044E MG2091E MG2140E MG2194E MG2265E MG2360E MG2480E MG2700E TM1019
Text: MG2RT Radiation Tolerant 0.5 Micron Sea of Gates Introduction The MG2RT series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2RT is manufactured using SCMOS3/2RT, a 0.5 micron drawn, 3 metal layers
|
Original
|
Tree65
32M DPRAM
MG2044E
MG2091E
MG2140E
MG2194E
MG2265E
MG2360E
MG2480E
MG2700E
TM1019
|
PDF
|
208-MIL
Abstract: mlp8 numonyx
Text: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40VMP6Txx M25P40VMS6Gx; M25P40VMS6Tx M25P40VMW6Gx; M25P40VMW6Txx
|
Original
|
M25P40
M25P40VMB6Txx
M25P40VMC6Gx;
M25P40VMC6Txx
M25P40VMN3Px;
M25P40VMN3Txx
M25P40VMN6Pxx;
M25P40VMN6Txxx
M25P40VMP6Gx;
208-MIL
mlp8 numonyx
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40VMP6Txx M25P40VMS6Gx; M25P40VMS6Tx M25P40VMW6Gx; M25P40VMW6Txx
|
Original
|
M25P40
M25P40VMB6Txx
M25P40VMC6Gx;
M25P40VMC6Txx
M25P40VMN3Px;
M25P40VMN3Txx
M25P40VMN6Pxx;
M25P40VMN6Txxx
M25P40VMP6Gx;
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40VMP6Txx M25P40VMS6Gx; M25P40VMS6Tx M25P40VMW6Gx; M25P40VMW6Txx
|
Original
|
M25P40
M25P40VMB6Txx
M25P40VMC6Gx;
M25P40VMC6Txx
M25P40VMN3Px;
M25P40VMN3Txx
M25P40VMN6Pxx;
M25P40VMN6Txxx
M25P40VMP6Gx;
|
PDF
|
M25P40-VMB6
Abstract: 208-MIL 208mils MLP8 package M25P40-VMW6G
Text: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40VMP6Txx M25P40VMS6Gx; M25P40VMS6Tx M25P40VMW6Gx; M25P40VMW6Txx
|
Original
|
M25P40
M25P40VMB6Txx
M25P40VMC6Gx;
M25P40VMC6Txx
M25P40VMN3Px;
M25P40VMN3Txx
M25P40VMN6Pxx;
M25P40VMN6Txxx
M25P40VMP6Gx;
M25P40-VMB6
208-MIL
208mils
MLP8 package
M25P40-VMW6G
|
PDF
|
M25P
Abstract: M25P40vmn6p M25PX64 mlp8 micron VFQFPN8
Text: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory M25P40VMB6Txx M25P40VMC6Gx; M25P40VMC6Txx M25P40VMN3Px; M25P40VMN3Txx M25P40VMN6Pxx; M25P40VMN6Txxx M25P40VMP6Gx; M25P40VMP6Txx M25P40VMS6Gx; M25P40VMS6Tx M25P40VMW6Gx; M25P40VMW6Txx
|
Original
|
M25P40
M25P40VMB6Txx
M25P40VMC6Gx;
M25P40VMC6Txx
M25P40VMN3Px;
M25P40VMN3Txx
M25P40VMN6Pxx;
M25P40VMN6Txxx
M25P40VMP6Gx;
M25P
M25P40vmn6p
M25PX64
mlp8 micron
VFQFPN8
|
PDF
|
MG2000
Abstract: MG2001 MG2002 MG2004 MG2010 MG2044 MG2055 MATRA MHS, MG2
Text: MG2 MG2 Sea of Gates Series 0.5 Micron CMOS Introduction The MG2 series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2 is manufactured using SCMOS 3/2, a 0.5 micron drawn, 3 metal layers
|
Original
|
BOUT12
MG2000
MG2001
MG2002
MG2004
MG2010
MG2044
MG2055
MATRA MHS, MG2
|
PDF
|
|
|
KM48S2020BT-G10
Abstract: KM48S8030AT-G10 KM48S8030BT-G10 KM44S4020BT-G10 D4564821G5-A10-9JF KM48S2020AT KM48S2020AT-G10 MT48LC2M8A1 D4564821G5-A10 Viking
Text: This is a snapshot of our AlphaPC 164LX DIMM Qualification testing as of the 15th of October 1997. DIMMs PASSED QUALIFICATION TESTING Note :- AlphaPC 164LX uses x72 DIMMs only. Vendor MB/ Bank Dataram Kingston Kingston Kingston Micron Micron NEC NEC NEC NEC
|
Original
|
164LX
KTV164LX/32
KTV164LX/64
KTV164LX/128
MT9LSDT272AG-66CL2
MT18LSDT472AG-66CL2
MC-452AA724F-A10
MC-454AC724F-A10
MC-458AA724F-A10
KM48S2020BT-G10
KM48S8030AT-G10
KM48S8030BT-G10
KM44S4020BT-G10
D4564821G5-A10-9JF
KM48S2020AT
KM48S2020AT-G10
MT48LC2M8A1
D4564821G5-A10
Viking
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 10 1 NOTE: 1. MATERIAL: HOUSING, HIGH TEMPERATURE POLYMER. 35 on TERMINAL, COPPER ALLOY. GROUNDING CLIP, COPPER ALLOY. 2. FINISH: TERMINAL: NICKEL OVERALL THICKNESS 0.5 MICRON MINIMUM, SELECTIVE GOLD 0.1 MICRON MINIMUM OVER PALLADIUM/NICKEL 0.5 MICRON MINIMUM IN CONTACT AREA,
|
OCR Scan
|
677990SPECIFIED)
SD-67799-004
|
PDF
|
nd02d2
Abstract: No abstract text available
Text: V L S I Technology, in c . PRELIMINARY VGC450/VGC453 LIBRARY 0.8-MICRON GATE ARRAY SERIES FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS Design Automation's ASIC Design
|
OCR Scan
|
VGC450/VGC453
VGC450/453
nd02d2
|
PDF
|
dram 88 pin
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC 55E D MICRON I • blllS4T 0DGSDb3 3T0 ■ MRN MT12D88C25636 256K x 36, 512K x 18 IC DRAM CARD - " T
|
OCR Scan
|
MT12D88C25636
88-Pin
dram 88 pin
|
PDF
|
2 bit magnitude comparator
Abstract: NCR asic NCR Microelectronics Division 1-Bit full adder 30076 7217 up down counter The Western Design Center AOI22 using NAND gate construct an inverter ncr 400
Text: A S I C APPLICATION SPECIFIC INTEGRATED CIRCUITS "i NCR 62A00 2-Micron Gate Array Products fM H ffik • 2-micron drawn, 1.5-micron effective, DLM process • 600 to 8,500 equivalent gate complexity with up to 95% utilization • Commercial, industrial, automotive and
|
OCR Scan
|
62A00
2 bit magnitude comparator
NCR asic
NCR Microelectronics Division
1-Bit full adder
30076
7217 up down counter
The Western Design Center
AOI22
using NAND gate construct an inverter
ncr 400
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 10 75005 NOTES: 1 MATERIALS: HOUSING - LIQUID CRYSTAL POLYMER. UL94 V -0, NATURAL CHICKLET - LIQUID CRYSTAL POLYMER. UL94 V -0, BLACK CONTACT - TIN BRASS 2) CONTACT PLATING FINISH: 0.76 MICRON MIN. SELECT GOLD AND 3.81 MICRON MIN. SELECT PURE TIN OVER 1.27 MICRON MIN. NICKEL OVERALL
|
OCR Scan
|
PS-75005-001.
PK-75005-001.
|
PDF
|
toshiba tc110g
Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram
Text: SIEMENS AKTIEN6ESELLSCHAF 47E » • BS3SbOS 0037405 7 » S I E G General Description Our Sea-of-Gates concept is based on a highperformance CMOS technology, in either 1.5 micron or 1.0 micron transistor gate length. This is equivalent to 1.1 or 0.8 micron effective
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 10 75005 NOTES: 1 MATERIALS: HOUSING - LIQUID CRYSTAL POLYMER. UL94 V -0, NATURAL CHICKLET - LIQUID CRYSTAL POLYMER. UL94 V -0, BLACK CONTACT - TIN BRASS 2) CONTACT PLATING FINISH: 0.76 MICRON MIN. SELECT GOLD AND 3.81 MICRON MIN. SELECT PURE TIN OVER 1.27 MICRON MIN. NICKEL OVERALL
|
OCR Scan
|
PS-75005-001.
PK-75005-001.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MICRON 4M E Gx4 . FPM DRAM DRAM MT4LC4M4B1, MT4LC4M4A1 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Temic MG2 Semiconductors MG2 Sea of Gates Series 0.5 Micron CMOS Introduction The MG2 series is a 0.5 micron, array based, CMOS prod uct family. Several arrays up to 700k cells cover all sys tem integration needs. The MG2 is manufactured using SCMOS3/2, a 0.5 micron drawn, 3 metal layers CMOS
|
OCR Scan
|
BOUT12
|
PDF
|