NTTS2P03R2
Abstract: SMD310
Text: NTTS2P03R2 Product Preview Power MOSFET -2.48 Amps, -30 Volts P–Channel Enhancement Mode Single Micro8 Package http://onsemi.com Features • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Miniature Micro8 Surface Mount Package
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NTTS2P03R2
r14525
NTTS2P03R2/D
NTTS2P03R2
SMD310
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Untitled
Abstract: No abstract text available
Text: NTLTS3107P Power MOSFET -20 V, -8.3 A, Single P-Channel, Micro8 Leadless Package Features •ăLow RDS on for Extended Battery Life •ăSurface Mount Micro8 Leadless for Improved Thermal Performance •ăLow Profile (<1.0 mm) Optimal for Portable Designs
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NTLTS3107P
NTLTS3107P/D
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846C
Abstract: NTLTS3107P NTLTS3107PR2G
Text: NTLTS3107P Power MOSFET -20 V, -8.3 A, Single P-Channel, Micro8 Leadless Package Features •ăLow RDS on for Extended Battery Life •ăSurface Mount Micro8 Leadless for Improved Thermal Performance •ăLow Profile (<1.0 mm) Optimal for Portable Designs
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NTLTS3107P
-20ws
NTLTS3107P/D
846C
NTLTS3107P
NTLTS3107PR2G
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846C
Abstract: NTLTS3107P NTLTS3107PR2G
Text: NTLTS3107P Power MOSFET −20 V, −8.3 A, Single P−Channel, Micro8 Leadless Package Features • • • • • Low RDS on for Extended Battery Life Surface Mount Micro8 Leadless for Improved Thermal Performance Low Profile (<1.0 mm) Optimal for Portable Designs
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NTLTS3107P
NTLTS3107P/D
846C
NTLTS3107P
NTLTS3107PR2G
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NTTD1P02R2
Abstract: No abstract text available
Text: NTTD1P02R2 Power MOSFET −1.45 Amps, −20 Volts P−Channel Enhancement Mode Dual Micro8 Package Features • • • • • • http://onsemi.com Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual Micro8 Surface Mount Package
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NTTD1P02R2
NTTD1P02R2/D
NTTD1P02R2
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Untitled
Abstract: No abstract text available
Text: NTTD1P02R2 Power MOSFET -1.45 Amps, -20 Volts P−Channel Enhancement Mode Dual Micro8 Package Features • • • • • • http://onsemi.com Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual Micro8 Surface Mount Package
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NTTD1P02R2
NTTD1P02R2
0E-05
0E-04
0E-03
0E-02
0E-01
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NTTD1P02R2
Abstract: SMD310 QT18
Text: NTTD1P02R2 Product Preview Power MOSFET -1.45 Amps, -20 Volts P–Channel Enhancement Mode Dual Micro8 Package http://onsemi.com Features • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual Micro8 Surface Mount Package
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NTTD1P02R2
r14525
NTTD1P02R2/D
NTTD1P02R2
SMD310
QT18
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ansi y14.5m-1982
Abstract: EIA-541 IRF7501
Text: PD - 95697 IRF7534D1PbF • Lead-Free www.irf.com 9/2/04 IRF7534D1PbF 2 www.irf.com IRF7534D1PbF www.irf.com 3 IRF7534D1PbF 4 www.irf.com IRF7534D1PbF www.irf.com 5 IRF7534D1PbF 6 www.irf.com IRF7534D1PbF Micro8 Package Outline Dimensions are shown in milimeters inches
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IRF7534D1PbF
EIA-481
EIA-541.
ansi y14.5m-1982
EIA-541
IRF7501
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044H8
Abstract: EIA-541 IRF7501 IRF7503PBF
Text: PD- 95346 IRF7503PbF Lead-Free www.irf.com 1 02/22/05 IRF7503PbF 2 www.irf.com IRF7503PbF www.irf.com 3 IRF7503PbF 4 www.irf.com IRF7503PbF www.irf.com 5 IRF7503PbF 6 www.irf.com IRF7503PbF Micro8 Package Outline Dimensions are shown in milimeters inches
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IRF7503PbF
EIA-481
EIA-541.
044H8
EIA-541
IRF7501
IRF7503PBF
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EIA-541
Abstract: IRF7501 Micro8 Package
Text: PD - 95695 IRF7604PbF • Lead-Free www.irf.com 9/1/04 IRF7604PbF 2 www.irf.com IRF7604PbF www.irf.com 3 IRF7604PbF 4 www.irf.com IRF7604PbF www.irf.com 5 IRF7604PbF 6 www.irf.com IRF7604PbF Micro8 Package Outline Dimensions are shown in milimeters inches
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IRF7604PbF
EIA-481
EIA-541.
EIA-541
IRF7501
Micro8 Package
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EIA-541
Abstract: No abstract text available
Text: PD - 95244 IRF7601PbF • Lead-Free www.irf.com 1 5/13/04 IRF7601PbF 2 www.irf.com IRF7601PbF www.irf.com 3 IRF7601PbF 4 www.irf.com IRF7601PbF www.irf.com 5 IRF7601PbF 6 www.irf.com IRF7601PbF Micro8 Package Outline Dimensions are shown in milimeters inches
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IRF7601PbF
EIA-481
EIA-541.
EIA-541
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S 566 b
Abstract: EIA-541 IRF7501 D287
Text: PD- 95347 IRF7603PbF Lead-Free www.irf.com 1 02/22/05 IRF7603PbF 2 www.irf.com IRF7603PbF www.irf.com 3 IRF7603PbF 4 www.irf.com IRF7603PbF www.irf.com 5 IRF7603PbF 6 www.irf.com IRF7603PbF Micro8 Package Outline Dimensions are shown in milimeters inches
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IRF7603PbF
EIA-481
EIA-541.
S 566 b
EIA-541
IRF7501
D287
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EIA-541
Abstract: ce 2752
Text: PD - 95696 IRF7506PbF • Lead-Free www.irf.com 9/2/04 IRF7506PbF 2 www.irf.com IRF7506PbF www.irf.com 3 IRF7506PbF 4 www.irf.com IRF7506PbF www.irf.com 5 IRF7506PbF 6 www.irf.com IRF7506PbF Micro8 Package Outline LEAD ASSIGNMENTS DIM D MIN .044 0.91 1.11
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IRF7506PbF
EIA-481
EIA-541.
EIA-541
ce 2752
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Untitled
Abstract: No abstract text available
Text: PD - 95696 IRF7506PbF • Lead-Free www.irf.com 9/2/04 IRF7506PbF 2 www.irf.com IRF7506PbF www.irf.com 3 IRF7506PbF 4 www.irf.com IRF7506PbF www.irf.com 5 IRF7506PbF 6 www.irf.com IRF7506PbF Micro8 Package Outline LEAD ASSIGNMENTS INCHES DIM D MIN .036 .044
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IRF7506PbF
EIA-481
EIA-541.
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Untitled
Abstract: No abstract text available
Text: PD - 95244 IRF7601PbF • Lead-Free www.irf.com 1 5/13/04 IRF7601PbF 2 www.irf.com IRF7601PbF www.irf.com 3 IRF7601PbF 4 www.irf.com IRF7601PbF www.irf.com 5 IRF7601PbF 6 www.irf.com IRF7601PbF Micro8 Package Outline Dimensions are shown in milimeters inches
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IRF7601PbF
EIA-481
EIA-541.
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NTTD2P02R2
Abstract: SMD310
Text: NTTD2P02R2 Power MOSFET -2.4 Amps, -20 Volts Dual P–Channel Micro8 Features • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Micro–8 Surface Mount Package Diode Exhibits High Speed, Soft Recovery
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NTTD2P02R2
r14525
NTTD2P02R2/D
NTTD2P02R2
SMD310
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Untitled
Abstract: No abstract text available
Text: NTTD2P02R2 Power MOSFET −2.4 Amps, −20 Volts Dual P−Channel Micro8 Features • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Micro−8 Surface Mount Package Diode Exhibits High Speed, Soft Recovery
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NTTD2P02R2
NTTD2P02R2/D
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Untitled
Abstract: No abstract text available
Text: IRF7521D1 Description TM The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal device for applications where printed circuit board space is at a premium.
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IRF7521D1
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846A-02
Abstract: No abstract text available
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS MICRO8 CASE 846A–02 ISSUE F DATE 01/09/2002 SCALE 2:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH,
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46A-01
46A-02.
846A-02
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AN569
Abstract: MTDF1N02HD MTDF1N02HDR2 SMD310 smd marking QT
Text: MOTOROLA Order this document by MTDF1N02HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTDF1N02HD Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistor Motorola Preferred Device Micro8 devices are an advanced series of power MOSFETs
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MTDF1N02HD/D
MTDF1N02HD
MTDF1N02HD/D*
AN569
MTDF1N02HD
MTDF1N02HDR2
SMD310
smd marking QT
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smd diode GW
Abstract: diode ESM 315 K451
Text: PD - 9.1647 International IOR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • N-Channel HEXFET • Low Vp Schottky Rectifier • Generation V T echnology • Micro8 Footprint VDSS =
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IRF7523D1
Rf7523d1
smd diode GW
diode ESM 315
K451
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g10 smd transistor
Abstract: SMD Transistor g10 f1n diode apk mosfet smd MARKING smd transistor MARKING lg pbd marking
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistor Micro8,u devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process to
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EIA-481-1.
g10 smd transistor
SMD Transistor g10
f1n diode
apk mosfet smd MARKING
smd transistor MARKING lg
pbd marking
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Untitled
Abstract: No abstract text available
Text: P D -9.1648 International ÏQ R Rectifier IRF7524D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a or 33 K a err HP K
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IRF7524D1
Rf7524d1
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ir*526
Abstract: smd diode schottky code marking 2F
Text: P D - 9.1649 International IGR Rectifier IRF7526D1 PRELIMINARY FETKY • Co-packaged HEXFET Power MOSFET and Schottky Diode • P-Channel HEXFET • Low Vp Schottky Rectifier • Generation V Technology • Micro8 Footprint Description MOSFET and Schottky Diode
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IRF7526D1
Rf7526d1
ir*526
smd diode schottky code marking 2F
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