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    MICRO6 PACKAGE Search Results

    MICRO6 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQ5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH1R306PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPHR8504PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    MICRO6 PACKAGE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Micro6 Package International Rectifier Case Outline and Dimensions Original PDF

    MICRO6 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRLMS1503PBF

    Abstract: No abstract text available
    Text: IRLMS1503PbF-1 HEXFET Power MOSFET VDS 30 RDS on max V 0.10 (@VGS = 10V) Ω RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 1 6 D 2 5 D G 3 4 S 0.20 6.4 nC 3.2 A Package Type IRLMS1503TRPbF-1 Micro6 Micro6™ Top View Features Industry-standard pinout Micro-6 Package


    Original     		IRLMS1503PbF-1 IRLMS1503TRPbF-1 TD-020D IRLMS1503PBF PDF

    IRLMS1503

    Abstract: AM 22A
    Text: PD - 9.1508C IRLMS1503 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on N-Channel MOSFET , $ , / Description  Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve


    Original     		1508C IRLMS1503 IRLMS1503 AM 22A PDF

    diode smd ED 84

    Abstract: EE 16A transformer ze 003 driver DIODE marking S6 89 IRLMS5703 3V REGULATOR SOT-23 smd marking 702 sot23 MOSFET marking smd NU 20mH SMD INDUCTOR
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1413B IRLMS5703 PRELIMINARY HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET D D G Description Fifth Generation HEXFETs from International Rectifier


    Original     		1413B IRLMS5703 diode smd ED 84 EE 16A transformer ze 003 driver DIODE marking S6 89 IRLMS5703 3V REGULATOR SOT-23 smd marking 702 sot23 MOSFET marking smd NU 20mH SMD INDUCTOR PDF

    smd diode marking LM

    Abstract: IRLMS5703 702 mosfet smd marking Diode smd s6 95
    Text: PD - 9.1413C IRLMS5703 PRELIMINARY HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET D D G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve


    Original     		1413C IRLMS5703 smd diode marking LM IRLMS5703 702 mosfet smd marking Diode smd s6 95 PDF

    IRLMS1902

    Abstract: No abstract text available
    Text: PD - 9.1540B IRLMS1902 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on N-Channel MOSFET , $ , / Description  Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve


    Original     		1540B IRLMS1902 IRLMS1902 PDF

    EIA-541

    Abstract: No abstract text available
    Text: PD - 94896 IRLMS5703PbF l l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on P-channel MOSFET Lead-Free Description Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance


    Original     		IRLMS5703PbF -100A/ -140A/ EIA-481 EIA-541. EIA-541 PDF

    IRf 444 MOSFET

    Abstract: P-Channel HEXFET Power MOSFET IRLMS1503 IRLMS1902
    Text: PD - 94896 IRLMS5703PbF l l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on P-channel MOSFET Lead-Free Description Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance


    Original     		IRLMS5703PbF EIA-481 EIA-541. IRf 444 MOSFET P-Channel HEXFET Power MOSFET IRLMS1503 IRLMS1902 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91508D IRLMS1503 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on N-Channel MOSFET Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance


    Original     		91508D IRLMS1503 EIA-481 EIA-541. PDF

    IRF 042

    Abstract: IRLMS1902
    Text: PD - 91540C IRLMS1902 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on N-Channel MOSFET Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per


    Original     		91540C IRLMS1902 EIA-481 EIA-541. IRF 042 IRLMS1902 PDF

    IRF 042

    Abstract: IRLMS1503
    Text: PD - 91508D IRLMS1503 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on N-Channel MOSFET Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance


    Original     		91508D IRLMS1503 EIA-481 EIA-541. IRF 042 IRLMS1503 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91540C IRLMS1902 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on N-Channel MOSFET Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per


    Original     		91540C IRLMS1902 EIA-481 EIA-541. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94896 IRLMS5703PbF HEXFET Power MOSFET l l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on P-channel MOSFET Lead-Free D D G Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing


    Original     		IRLMS5703PbF EIA-481 EIA-541. PDF

    IRLMS6803

    Abstract: IRLMS1902 IRLMS2002 IRLMS4502 IRLMS5703 IRLMS6702 58AV
    Text: PD - 95762 IRLMS1503PbF HEXFET Power MOSFET l l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on N-Channel MOSFET Lead-Free Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance


    Original     		IRLMS1503PbF leadframe01 EIA-481 EIA-541. IRLMS6803 IRLMS1902 IRLMS2002 IRLMS4502 IRLMS5703 IRLMS6702 58AV PDF

    Micro6 Package

    Abstract: IRLMS5703
    Text: PD - 91413E IRLMS5703 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET D D G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This


    Original     		91413E IRLMS5703 EIA-481 EIA-541. Micro6 Package IRLMS5703 PDF

    IRLMS 4502 D

    Abstract: EIA-541 IRLMS1503 IRLMS2002 IRLMS6803 400V Single N-Channel HEXFET Power MOSFET pulse transformer 4502 irlmS1902pbf
    Text: PD - 95359 IRLMS1902PbF HEXFET Power MOSFET l l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on N-Channel MOSFET Lead-Free Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per


    Original     		IRLMS1902PbF EIA-481 EIA-541. IRLMS 4502 D EIA-541 IRLMS1503 IRLMS2002 IRLMS6803 400V Single N-Channel HEXFET Power MOSFET pulse transformer 4502 irlmS1902pbf PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95359 IRLMS1902PbF HEXFET Power MOSFET l l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on N-Channel MOSFET Lead-Free Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per


    Original     		IRLMS1902PbF EIA-481 EIA-541. PDF

    IRLMS6702

    Abstract: No abstract text available
    Text: PD - 91414C IRLMS6702 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on P-Channel MOSFET D D G Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance


    Original     		91414C IRLMS6702 EIA-481 EIA-541. IRLMS6702 PDF

    IRLMS6702PbF

    Abstract: IRLMS 4502 D mosfet 4502 IRLMS1503 IRLMS2002 IRLMS6803
    Text: PD - 95224 IRLMS6702PbF HEXFET Power MOSFET l l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on P-Channel MOSFET Lead-Free Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance


    Original     		IRLMS6702PbF leadfram50 EIA-481 EIA-541. information01/05 IRLMS6702PbF IRLMS 4502 D mosfet 4502 IRLMS1503 IRLMS2002 IRLMS6803 PDF

    marking code 67a sot23 6

    Abstract: No abstract text available
    Text: PD - 95762 IRLMS1503PbF HEXFET Power MOSFET l l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on N-Channel MOSFET Lead-Free Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance


    Original     		IRLMS1503PbF EIA-481 EIA-541. marking code 67a sot23 6 PDF

    IRLMS5703

    Abstract: No abstract text available
    Text: PD - 91413E IRLMS5703 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET D D G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This


    Original     		91413E IRLMS5703 EIA-481 EIA-541. IRLMS5703 PDF

    GC 72 smd diode

    Abstract: smd code marking gC SOT-23 smd marking gc diode bad sot23 smd 1p sot-23 smd diode marking 1P MARKING tAN SOT-23 diode
    Text: PD - 9.1413C International I R Rectifier IRLMS5703 PRELIMINARY HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET Vqss = *30V R D S (o n ) = 0 . 2 0 Q Description Fifth Generation HEXFETs from International Rectifier


    OCR Scan     		1413C IRLMS5703 OT-23. GC 72 smd diode smd code marking gC SOT-23 smd marking gc diode bad sot23 smd 1p sot-23 smd diode marking 1P MARKING tAN SOT-23 diode PDF

    smd code 9fc

    Abstract: smd 2d 1002 -reel smd diode 2d mosfet ir 840 SOT-23 marking 2f p-Channel sot-23 MARKING CODE nm
    Text: bitemational Rectifier PD 9.1414 IR LM S6702 PRELIMINARY HEXFET Power MOSFET • Generation 5 Technology • Micro6 Package Style • Ultra Low Rds on V qss = -20V • P-Channel MOSFET Description Generation 5 HEXFETs from International Recti­ fier utilize advanced processing techniques to


    OCR Scan     		S6702 OT-23. BA-481 EIA-541. smd code 9fc smd 2d 1002 -reel smd diode 2d mosfet ir 840 SOT-23 marking 2f p-Channel sot-23 MARKING CODE nm PDF

    2D 1002 diode

    Abstract: sot 23 d9 d3s marking
    Text: PD - 9.1540B International IOR Rectifier IRLMS1902 HEXFET Power MOSFET • Generation V Technology • Micro6 Package Style • Ultra Low Rds on • N-Channel MOSFET V dss = 20 V RDS(on) = 0 .1 0 Î2 Description Fifth Generation H EXFETsfrom International Rectifier


    OCR Scan     		OT-23. 2D 1002 diode sot 23 d9 d3s marking PDF

    C641

    Abstract: No abstract text available
    Text: PD - 9.1413D International M R Rectifier IRLMS5703 HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET Vdss = "30V RDS(on) = 0.20Q Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize


    OCR Scan     		1413D IRLMS5703 OT-23. 100ps C641 PDF