MHZ RF AMPLIFIER MODULE Search Results

AM020331SF-2D

Abstract: mhz rf amplifier module class a power amplifier
Contextual Info: The RF Power House 225 - 300 MHz 2 Watt Power Amplifier AM020331SF-2D DESCRIPTION AMCOM's AM020331SF-2D is a UHF Band Power Amplifier designed for FEATURES high power RF applications. It operates from 225 to 300 MHz and delivers a • Class A Power Amplifier

5-53P

Abstract: S-AV10H S-AV10L
Contextual Info: S-AV10L,S-AV10H TOSHIBA RF Power Amplifier Module S-AV10L,S-AV10H VHF RF Power Amplifier Module Unit: mm • High gain: Po ≥ 14 W, Gp ≥ 1.85dB, ηT ≥ 40% · S-AV10L 135~155 MHz · S-AV10H 150~175 MHz Maximum Ratings Tc = 25°C Characteristics Symbol

S-AV10L

Abstract: "RF Power Amplifier" "RF Power" 5-53P S-AV10H S-AV10
Contextual Info: S-AV10L,S-AV10H TOSHIBA RF Power Amplifier Module S-AV10L,S-AV10H VHF RF Power Amplifier Module Unit: mm • High gain: Po ≥ 14 W, Gp ≥ 1.85dB, ηT ≥ 40% • S-AV10L 135~155 MHz • S-AV10H 150~175 MHz Maximum Ratings Tc = 25°C Characteristics Symbol

800w power amplifier circuit diagram

Abstract: 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 1000w power amplifier circuit diagram 1000 watts amplifier schematic diagram with part 1200w power amplifier amplifier circuit diagram 1000 watt 300w mosfet power amplifier circuit diagram 1200w amplifier "Good RF Construction Practices and Techniques"
Contextual Info: APPLICATION NOTE APT9502 By Kenneth W. Dierberger APT9502 LOW COST 1000 WATT, 300 VOLT RF POWER AMPLIFIER FOR 13.56 MHz Presented at RF EXPO EAST 1995 Page 1 Low Cost 1000 Watt, 300 Volt RF Power Amplifier for 13.56MHz Kenneth Dierberger Applications Engineering Manager

4041 transistor

Abstract: teledyne transistor
Contextual Info: Thin-Film Cascadable Amplifier Module 20 to 200 MHz Technical Data UTO/UTC 222 Series Features Description Pin Configuration • Frequency Range: 20 to 200 MHz The 222 Series is a thin-film, high gain, low-noise, RF cascade amplifier suitable for a variety of

utc 1018

Contextual Info: Thin-Film Cascadable Amplifier Module 10 to 200 MHz Technical Data UTO/UTC 211 Series Features Description Pin Configuration • Frequency Range: 10 to 200 MHz The 211 Series is a thin-film bipolar, medium-gain, low-noise, RF amplifier suitable for front end

7 v 4212 db

Contextual Info: Thin-Film Cascadable Amplifier Module 10 to 200 MHz Technical Data UTO/UTC 211 Series Features Description Pin Configuration • Frequency Range: 10 to 200 MHz The 211 Series is a thin-film bipolar, medium-gain, low-noise, RF amplifier suitable for front end

MBDQ01

Contextual Info: polyfet rf devices MBDQ01 Power RF Amplifiers Power = 30.0 Watts Bandwidth = 30 to 470 Mhz Gain = 10.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MBDQ01 is a 30 Watt, single stage amplifier module covering a bandwidth of 30-470 Mhz. This compact module design is

MSMV01

Abstract: module
Contextual Info: polyfet rf devices MSMV01 RF Power Module Power = 100.0 Watts Bandwidth = 225 to 1000 Mhz Gain = 16.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MSMV01 is a 100 Watt, single stage amplifier module covering a bandwidth of 225-1000 Mhz. This compact module design

Contextual Info: polyfet rf devices PCM002 Power RF Amplifiers Power = 30.0 Watts Bandwidth = 30 to 470 Mhz Gain = 10.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The PCM002 is a 30 Watt, single stage amplifier module covering a bandwidth of 30-470 Mhz. This compact module design is

Contextual Info: polyfet rf devices MBDQ01 Power RF Amplifiers Power = 30.0 Watts Bandwidth = 30 to 470 Mhz Gain = 10.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MBDQ01 is a 30 Watt, single stage amplifier module covering a bandwidth of 30-470 Mhz. This compact module design is

MLCQ02

Abstract: module
Contextual Info: polyfet rf devices MLCQ02 Power RF Amplifiers Power = 40.0 Watts Bandwidth = 20 to 512 Mhz Gain = 37.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MLCQ02 is a 40 Watt, high gain amplifier module covering a bandwidth of 20-512 Mhz. This compact module design is

Contextual Info: polyfet rf devices MBDQ01 Power RF Amplifiers Power = 30.0 Watts Bandwidth = 30 to 470 Mhz Gain = 10.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MBDQ01 is a 30 Watt, single stage amplifier module covering a bandwidth of 30-470 Mhz. This compact module design is

Contextual Info: P250-1215 250 Watt RF POWER MODULE 960 to 1215 MHZ DESCRIPTION: The ASI P250-1215 is a 250 Watt 960-1215 MHz Pallet Amplifier Features: • 250 Watt Pulse Width 20uS, Duty cycle 5% RF Output Power (16 Watts Input Power)  LDMOS Technology  36V operation

MSCQ01

Abstract: module rf amplifier 100w rf power amplifier 100w AMPLIFIER 2 MHZ 100W 150M 100W POWER AMPLIFIER RF power amplifier MHz
Contextual Info: polyfet rf devices MSCQ01 Power RF Amplifiers Power = 100.0 Watts Bandwidth = 30 to 512 Mhz Gain = 8.0 dB Vdd = 26.0 Volts 50 ohms Input/Output Impedance Description The MSCQ01 is a 100 Watt, single stage amplifier module covering a bandwidth of 30-512 Mhz. This compact module design is

MHCV01

Abstract: module
Contextual Info: polyfet rf devices MHCV01 Power RF Amplifiers Power = 10.0 Watts Bandwidth = 20 to 1000 Mhz Gain = 30.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MHCV01 is a 10 Watt, high gain amplifier module covering a bandwidth of 20-1000 Mhz. This compact module design is

Contextual Info: polyfet rf devices PCM002 Power RF Amplifiers Power = 30.0 Watts Bandwidth = 30 to 470 Mhz Gain = 10.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The PCM002 is a 30 Watt, single stage amplifier module covering a bandwidth of 30-470 Mhz. This compact module design is

MSCQ02

Abstract: module
Contextual Info: polyfet rf devices MSCQ02 RF Power Module Power = 150.0 Watts Bandwidth = 30 to 512 Mhz Gain = 17.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MSCQ02 is a 150 Watt, single stage amplifier module covering a bandwidth of 30-512 Mhz. This compact module design is

Contextual Info: P100-1215 100 Watt RF POWER MODULE 960 to 1215 MHZ DESCRIPTION: The ASI P100-1215 is a 100 Watt 960-1215 MHz pallet Amplifier Features: • 100 Watt Pulse Width 20uS, Duty cycle 5% RF Output Power (10 Watts Input Power)  LDMOS Technology  24-36V operation

Contextual Info: P1000-1215 1000 Watt RF POWER MODULE 960 to 1215 MHZ DESCRIPTION: The ASI P1000-1215 is a 1000 Watt 960-1215 MHz pallet Amplifier Features: • 1 kWatt Pulse Width 20uS, Duty cycle 5% RF Output Power (32 Watts Input Power)  LDMOS Technology  48V operation

MBDQ01

Abstract: module
Contextual Info: polyfet rf devices MBDQ01 Power RF Amplifiers Power = 30.0 Watts Bandwidth = 30 to 470 Mhz Gain = 10.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MBDQ01 is a 30 Watt, single stage amplifier module covering a bandwidth of 30-470 Mhz. This compact module design is

MLCQ03

Abstract: module
Contextual Info: polyfet rf devices MLCQ03 Power RF Amplifiers Power = 60.0 Watts Bandwidth = 20 to 512 Mhz Gain = 37.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MLCQ03 is a 60 Watt, high gain amplifier module covering a bandwidth of 20-512 Mhz. This compact module design is

Contextual Info: polyfet rf devices MBDQ02 Power RF Amplifiers Power = 40.0 Watts Bandwidth = 20 to 512 Mhz Gain = 10.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MBDQ02 is a 40 Watt, single stage amplifier module covering a bandwidth of 20-512 Mhz. This compact module design is

rf amplifier 100w

Contextual Info: polyfet rf devices MKAL01 Power RF Amplifiers Power = 100.0 Watts Bandwidth = 2 to 100 Mhz Gain = 50.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MKAL01 is a 100 Watt, high gain amplifier module covering a bandwidth of 2-100 Mhz. This compact module design is