MHZ PNP TRANSISTOR Search Results

AF279

Abstract: tfk transistor germanium-pnp-mesa-hf-transistor AF279 transistor tfk 140 Germanium mesa AF 279 042PF
Contextual Info: Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: V orstufen bis 900 MHz Applications: Pre stages up to 900 MHz Besondere Merkmale: Features: • Passivierte O berfläche • • Leistungsverstärkung 16 dB • Power gain 16 dB

AF280

Abstract: germanium-pnp-mesa-hf-transistor oszillator Germanium mesa AF 280 042PF
Contextual Info: Nicht für Neuentwicklungen Not for new developments AF 280 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Misch- und O szillatorstufen bis 900 MHz Applications: M ixer and oscilla to r stages up to 900 MHz Besondere Merkmale:

TFK U 111 B

Abstract: 6 TFK 106 tfk 106 AF106 tfk 518 tfk u 111 TFK AF TFK 111 tfk 325 germanium-pnp-mesa-hf-transistor
Contextual Info: Nicht für Neuentwicklungen Not for new developments AF 106 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 260 MHz Applications: Pre, m ixer and o scilla to r stages up to 260 MHz Besondere Merkmale:

AF 109 R

Abstract: AF109R af109 germanium-pnp-mesa-hf-transistor
Contextual Info: ¡fi Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: G eregelte Vorstufen bis 260 MHz Applications: C ontrolled pre-stages up to 260 MHz Besondere Merkmale: Features: • Leistungsverstärkung 16,5 dB • Power gain 16.5 dB • Rauschmaß < 4 ,8 dB

AF239

Abstract: germanium-pnp-mesa-hf-transistor Tfk 239 900 mhz oscillator AF 239
Contextual Info: * AF 239 S 'W Nicht für Neuentwicklungen Not for new developments 4W Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 900 MHz Applications: Pre, m ixer and o scilla to r stages up to 900 MHz

AF239

Abstract: germanium-pnp-mesa-hf-transistor AF 239
Contextual Info: 'W Nicht für Neuentwicklungen Not for new developments AF 239 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, M isch- und O szillatorstufen bis 900 MHz Applications: Pre, m ixe r and o scilla to r stages up to 900 MHz

transistor BF 506

Abstract: BF506 S45C 51785 to 92 z transistor f 506 z.2x
Contextual Info: BF 506 Silizium-PNP-HF-Transistor Silicon PNP RF Transistor Anwendungen: Oszillator-, M isch- und ungeregelte Vorstufen bis 300 MHz Applications: O scillator- m ixer and u n controlled p re a m p lifie r stages up to 300 MHz Besondere Merkmale: Features: • Kleine R ückwirkungskapazität

Contextual Info: Quad Low-Noise NPN / PNP Transistor Array T H AT Corporation THAT140 FEATURES APPLICATIONS • Two Matched NPN Transistors Two Matched PNP Transistors · Monolithic Construction · Low Noise — 0.75 nV/ Hz PNP — 0.8 nV/ Hz (NPN) · High Speed — ft= 350 MHz (NPN)

AFY18

Abstract: AFY18E AFY18D germanium mesa transistor pnp Germanium Transistor afy1
Contextual Info: AFY18 PNP Mesa transistor for antenna amplifiers up to 250 MHz The AFY18 is a germanium PNP RF epitaxial mesa transistor in a case 5 C3 DIN 41 873 TO -39 . The collector is electrically connected to the case. The A F Y 18 is designed for antenna amplifiers up to 250 MHz.

"PNP Transistor array"

Abstract: pnp 8 transistor array dual matched PNP ST 2n3904 TRANSISTOR PNP "Microphone Preamplifiers" NPN Two monolithic transistors DIELECTRICALLY ISOLATED pin configuration NPN transistor 2n3906 pnp array 2N3904
Contextual Info: T H AT Corporation Quad Low-Noise NPN / PNP Transistor Array THAT140 FEATURES APPLICATIONS • Two Matched NPN Transistors Two Matched PNP Transistors · Monolithic Construction · Low Noise — 0.75 nV/ Hz PNP — 0.8 nV/ Hz (NPN) · High Speed — ft= 350 MHz (NPN)

AFY16

Abstract: Germanium Transistor 71lb 21b22
Contextual Info: AFY16 PNP Transistor for RF-application up to 900 MHz The A FY 16 is a germanium PNP RF mesa transistor in a case 18 A 4 DIN 41 876 TO-72 . The terminals are electrically insulated from the case. The AFY 16 is designed for use in pre-stages as well as in mixer and oscillator stages up to 900 MHz.

CBC 557 C

Abstract: CBC 557 AF139 1j 400 CBC 557 B TFK AF 72136 72136 p AF 139 germanium-pnp-hf-transistor
Contextual Info: Germanium-PNP-HF-Transistor Germanium PNP RF Transistor Anwendungen: Vor-, Misch- und Oszillatorstufen bis 860 MHz Applications: Pre, mixer and oscillator stages up to 860 M Hz Besondere Merkmale: Features: • Leistungsverstärkung >9 dB • Pow er gain > 9 dB

2N5415

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-39/TO-5 PACKAGE PNP TO-39 PNP TO-5 tr 1 V ceo Ic hFE@ V VcE VcE sat (sus) VOLTS (max) AMPS (min/max @ A/V) @ IC/IB (V @ A/A) 2N3867 40 3 >25@2.5/3 2N3868 60 3 2N4930 200 2N4931 p * rD Ìt WATTS (MHz) 1.3@2.5/.25

2STA1962

Abstract: 2STC5242 JESD97
Contextual Info: 2STA1962 High power PNP epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = -230 V ■ Complementary to 2STC5242 ■ Fast-switching speed ■ Typical fT = 30 MHz Application 3 2 ■ Audio power amplifier 1 TO-3P Description This device is a PNP transistor manufactured

Contextual Info: Quad Low-Noise PNP Transistor Array T H AT Corporation THAT120 FEATURES APPLICATIONS • Four Matched PNP Transistors · Microphone Preamplifiers · Low noise — 0.75 · Tape Head Preamplifiers · High Speed — 325 MHz ft · Current Sources · Excellent Matching - 500 mV typ

2N3553 equivalent

Abstract: vk-200 ferrite choke vk200* FERROXCUBE 2N3553 VK-200 VK200 MM4019 ATC200
Contextual Info: MM4019 silicon PNP SILICON RF POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR . . . designed for use as complement to NPN 2N 3553 in VH F and UHF amplifier applications for military and industrial equipment. • Power Output - Pout = 2.0 W (Typ) @ Pjn = 0.5 W, f = 400 MHz

"PNP Transistor array"

Abstract: "Microphone Preamplifiers" THAT120
Contextual Info: Quad Low-Noise PNP Transistor Array T H AT Corporation THAT120 FEATURES APPLICATIONS • Four Matched PNP Transistors · Microphone Preamplifiers · Low noise — 0.75 · Tape Head Preamplifiers · High Speed — 325 MHz ft · Current Sources · Excellent Matching - 500 mV typ

"PNP Transistor array"

Abstract: "Microphone Preamplifiers" antilog amplifier THAT120
Contextual Info: T H AT Corporation Quad Low-Noise PNP Transistor Array THAT120 FEATURES APPLICATIONS • Four Matched PNP Transistors · Microphone Preamplifiers · Low noise — 0.75 · Tape Head Preamplifiers · High Speed — 325 MHz ft · Current Sources · Excellent Matching - 500 mV typ

AFY42

Abstract: U120 103MHZ 400M GR22B Germanium Transistor Germanium mesa SZ2B
Contextual Info: AFY42 PNP Mesa transistor for pre-stages, mixer and oscillator stages up to 900 MHz AFY 42 is a germanium PNP mesa transistor in a case 18 A 4 DIN 41 876 TO —72 . The leads are electrically insulated from the case. It is particularly suitable for use in

TRANSISTOR SMD CODE PACKAGE SOT89

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 4 SMD CODE SOT89 lc b3 smd transistor smd transistor code b3 BFQ149 smd transistor b3 BFQ14 10 GHz PNP transistor smd transistor HB
Contextual Info: Philips Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFQ149 PINNING PNP tra nsistor in a S O T89 envelope. It is intended for use in U HF a pplications such as broadband aerial am plifiers 30 to 860 MHz and in m icrow ave am plifiers such as radar

pnp 8 transistor array

Abstract: BD 104 NPN LA400 ARRAY resistor npn 8 transistor array transistor array pnp bD 106 transistor
Contextual Info: AT&T Data Sheet ^ ss oo5i 52 Benefits • High-frequency performance, typical fr of 350 MHz for NPN and 300 MHz for PNP transistors ■ 30 volt capability ■ Low development costs ■ Quick design turnaround, typically six to eight weeks from design approval

BD 104 NPN

Abstract: pnp 8 transistor array LA400 npn 8 transistor array BD+104+NPN
Contextual Info: AT&T Data Sheet oo5i 52 ^ ss Benefits • High-frequency performance, typical fr of 350 MHz for NPN and 300 MHz for PNP transistors ■ 30 volt capability ■ Low development costs ■ Quick design turnaround, typically six to eight weeks from design approval

Contextual Info: lAiur Data Sheet Linear Array 005152 Benefits • High-frequency performance, typical fî of 350 MHz for NPN and 300 MHz for PNP transistors ■ 30 volt capability ■ Low development costs ■ Quick design turnaround, typically six to eight weeks from design

AF239S

Abstract: Germanium mesa
Contextual Info: 11419771 AF239S MESA PNP UHF PREAMPLIFIER The AF 239S is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It is particularly designed as preamplifier, mixer and oscillator up to 900 MHz. ABSOLUTE MAXIMUM RATINGS V C ES VcEO ^E B O 'c P.o, Collector-em itter voltage VBE = 0