| MGY25N120/D |
|
Motorola
|
IGBT IN TO-264 A |
|
Original |
PDF
|
| MGY25N120/D |
|
Motorola
|
IGBT IN TO-264 25 A |
|
Original |
PDF
|
| MGY25N120D |
|
Motorola
|
Bipolar Transistor, Insulated Gate Bipolar Transistor with Anti-ParallelDiodeN-ChannelEnhancement-ModeSiliconGate |
|
Original |
PDF
|
| MGY25N120D |
|
Motorola
|
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
|
Original |
PDF
|
| MGY25N120D |
|
On Semiconductor
|
IGBT Chip, N Channel, 1200V, TO-264, 3-Pin |
|
Original |
PDF
|
| MGY25N120D |
|
On Semiconductor
|
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel |
|
Original |
PDF
|
| MGY25N120-D |
|
On Semiconductor
|
Insulated Gate Bipolar Transistor N-Channel Enhanc |
|
Original |
PDF
|
| MGY25N120D/D |
|
Motorola
|
IGBT & DIODE IN TO-264 25 A |
|
Original |
PDF
|
| MGY25N120D/D |
|
Motorola
|
IGBT & DIODE IN TO-264 25 A |
|
Original |
PDF
|
| MGY25N120D-D |
|
On Semiconductor
|
Insulated Gate Bipolar Transistor with Anti-Parall |
|
Original |
PDF
|
