MGFC5211 Search Results
MGFC5211 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
|---|---|---|---|---|---|---|
| MGFC5211 |
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K-Band 2-Stage Power Amplifier | Original |
MGFC5211 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
340 mmic
Abstract: MGFC5211
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Original |
MGFC5211 MGFC5211 340 mmic | |
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Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGFC5211 K-Band 2-Stage Power Amplifier Target Specifications ELECTRICAL CHARACTERISTICS Ta=25 Degree C. Symbol IDSS1 IDSS2 Vp1 Vp2 Parameter Test Conditions Drain Saturation Current Vd=3.0V Drain Saturation Current Pinch Off Voltage |
Original |
MGFC5211 180mA* 20dBm Ids211 | |
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Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5211 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-Stage Power Amplifier DESCRIPTION The MGFC5211 is a GaAs MMIC chip especially designed for 21.2 ~ 23.6 GHz band High |
OCR Scan |
MGFC5211 MGFC5211 |